TWI559514B - 減低畫素區域影像感測器 - Google Patents
減低畫素區域影像感測器 Download PDFInfo
- Publication number
- TWI559514B TWI559514B TW102139161A TW102139161A TWI559514B TW I559514 B TWI559514 B TW I559514B TW 102139161 A TW102139161 A TW 102139161A TW 102139161 A TW102139161 A TW 102139161A TW I559514 B TWI559514 B TW I559514B
- Authority
- TW
- Taiwan
- Prior art keywords
- column
- pixels
- transistors
- transistor
- output
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/686,573 US7915702B2 (en) | 2007-03-15 | 2007-03-15 | Reduced pixel area image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201407759A TW201407759A (zh) | 2014-02-16 |
| TWI559514B true TWI559514B (zh) | 2016-11-21 |
Family
ID=39491702
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102139161A TWI559514B (zh) | 2007-03-15 | 2008-03-14 | 減低畫素區域影像感測器 |
| TW097109186A TWI418021B (zh) | 2007-03-15 | 2008-03-14 | 減低畫素區域影像感測器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097109186A TWI418021B (zh) | 2007-03-15 | 2008-03-14 | 減低畫素區域影像感測器 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7915702B2 (enExample) |
| EP (1) | EP2118930B1 (enExample) |
| JP (1) | JP5357063B2 (enExample) |
| KR (1) | KR101398767B1 (enExample) |
| CN (2) | CN102623474B (enExample) |
| TW (2) | TWI559514B (enExample) |
| WO (1) | WO2008115331A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7924333B2 (en) * | 2007-08-17 | 2011-04-12 | Aptina Imaging Corporation | Method and apparatus providing shared pixel straight gate architecture |
| US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
| JP5408954B2 (ja) * | 2008-10-17 | 2014-02-05 | キヤノン株式会社 | 撮像装置、及び撮像システム |
| GB2466213B (en) * | 2008-12-12 | 2013-03-06 | Cmosis Nv | Pixel array with shared readout circuitry |
| JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP2010206173A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびカメラ |
| JP2010206172A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 撮像装置およびカメラ |
| JP2010206174A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびその製造方法ならびにカメラ |
| JP5564874B2 (ja) * | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
| JP5537172B2 (ja) * | 2010-01-28 | 2014-07-02 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5377549B2 (ja) * | 2011-03-03 | 2013-12-25 | 株式会社東芝 | 固体撮像装置 |
| EP2733483B1 (en) * | 2011-07-14 | 2020-04-29 | National University Corporation Toyohashi University of Technology | Method for detecting chemical or physical phenomenon and device therefor |
| DE102011120099B4 (de) | 2011-12-02 | 2024-05-29 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor und Verfahren zum Auslesen eines Bildsensors |
| CN103208501B (zh) | 2012-01-17 | 2017-07-28 | 奥林巴斯株式会社 | 固体摄像装置及其制造方法、摄像装置、基板、半导体装置 |
| JP5953087B2 (ja) * | 2012-01-17 | 2016-07-13 | オリンパス株式会社 | 固体撮像装置、撮像装置および固体撮像装置の製造方法 |
| WO2014002366A1 (ja) * | 2012-06-27 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置 |
| JP5962533B2 (ja) * | 2013-02-13 | 2016-08-03 | ソニー株式会社 | 固体撮像素子、駆動方法、および撮像装置 |
| US9319613B2 (en) * | 2013-12-05 | 2016-04-19 | Omnivision Technologies, Inc. | Image sensor having NMOS source follower with P-type doping in polysilicon gate |
| CN105100654B (zh) * | 2015-09-18 | 2018-02-23 | 中国科学院高能物理研究所 | 一种像素单元电路及像素读出芯片 |
| KR102701855B1 (ko) | 2016-12-28 | 2024-09-02 | 삼성전자주식회사 | 이미지 센서 |
| JP7467061B2 (ja) * | 2019-10-09 | 2024-04-15 | 株式会社ジャパンディスプレイ | 検出装置 |
| KR20210114786A (ko) * | 2020-03-11 | 2021-09-24 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| US20220328541A1 (en) | 2021-04-08 | 2022-10-13 | Quantum-Si Incorporated | Integrated circuit having mirrored pixel configuration |
| WO2023137680A1 (en) * | 2022-01-21 | 2023-07-27 | Huawei Technologies Co.,Ltd. | Imaging device array |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050218299A1 (en) * | 2004-03-31 | 2005-10-06 | Alf Olsen | Amplification with feedback capacitance for photodetector signals |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625210A (en) | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
| ES2211937T3 (es) | 1995-08-02 | 2004-07-16 | Canon Kabushiki Kaisha | Dispositivo sensor de imagenes de estado solido con linea de salida comun. |
| EP0809394B1 (en) * | 1996-05-22 | 2008-02-13 | Eastman Kodak Company | Active pixel sensor with switched supply row select |
| US5949061A (en) | 1997-02-27 | 1999-09-07 | Eastman Kodak Company | Active pixel sensor with switched supply row select |
| US5903021A (en) * | 1997-01-17 | 1999-05-11 | Eastman Kodak Company | Partially pinned photodiode for solid state image sensors |
| US6160281A (en) | 1997-02-28 | 2000-12-12 | Eastman Kodak Company | Active pixel sensor with inter-pixel function sharing |
| US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
| JP3466886B2 (ja) * | 1997-10-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
| JP4006111B2 (ja) | 1998-09-28 | 2007-11-14 | キヤノン株式会社 | 固体撮像装置 |
| US6624850B1 (en) * | 1998-12-30 | 2003-09-23 | Eastman Kodak Company | Photogate active pixel sensor with high fill factor and correlated double sampling |
| US6218656B1 (en) * | 1998-12-30 | 2001-04-17 | Eastman Kodak Company | Photodiode active pixel sensor with shared reset signal row select |
| US6657665B1 (en) | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
| US6541794B1 (en) * | 2000-08-31 | 2003-04-01 | Motorola, Inc. | Imaging device and method |
| US7187410B2 (en) * | 2001-03-05 | 2007-03-06 | Matsushita Electric Industrial Co., Ltd. | Solid state image sensor |
| US6855937B2 (en) * | 2001-05-18 | 2005-02-15 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6720942B2 (en) * | 2002-02-12 | 2004-04-13 | Eastman Kodak Company | Flat-panel light emitting pixel with luminance feedback |
| US20060103749A1 (en) * | 2004-11-12 | 2006-05-18 | Xinping He | Image sensor and pixel that has switchable capacitance at the floating node |
| JP4340660B2 (ja) | 2005-04-14 | 2009-10-07 | シャープ株式会社 | 増幅型固体撮像装置 |
| JP4768305B2 (ja) | 2005-04-15 | 2011-09-07 | 岩手東芝エレクトロニクス株式会社 | 固体撮像装置 |
| JP5247007B2 (ja) | 2005-06-09 | 2013-07-24 | キヤノン株式会社 | 撮像装置及び撮像システム |
-
2007
- 2007-03-15 US US11/686,573 patent/US7915702B2/en active Active
-
2008
- 2008-02-20 CN CN201210102673.9A patent/CN102623474B/zh active Active
- 2008-02-20 CN CN2008800084283A patent/CN101647118B/zh active Active
- 2008-02-20 WO PCT/US2008/002235 patent/WO2008115331A1/en not_active Ceased
- 2008-02-20 JP JP2009553578A patent/JP5357063B2/ja active Active
- 2008-02-20 KR KR1020097019118A patent/KR101398767B1/ko active Active
- 2008-02-20 EP EP08725828.1A patent/EP2118930B1/en active Active
- 2008-03-14 TW TW102139161A patent/TWI559514B/zh active
- 2008-03-14 TW TW097109186A patent/TWI418021B/zh active
-
2011
- 2011-01-26 US US13/014,336 patent/US8294187B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050218299A1 (en) * | 2004-03-31 | 2005-10-06 | Alf Olsen | Amplification with feedback capacitance for photodetector signals |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010521812A (ja) | 2010-06-24 |
| EP2118930B1 (en) | 2015-01-14 |
| TWI418021B (zh) | 2013-12-01 |
| HK1171870A1 (en) | 2013-04-05 |
| TW201407759A (zh) | 2014-02-16 |
| US20080225148A1 (en) | 2008-09-18 |
| KR101398767B1 (ko) | 2014-05-27 |
| WO2008115331A1 (en) | 2008-09-25 |
| CN102623474A (zh) | 2012-08-01 |
| TW200903789A (en) | 2009-01-16 |
| EP2118930A1 (en) | 2009-11-18 |
| US20110122307A1 (en) | 2011-05-26 |
| US7915702B2 (en) | 2011-03-29 |
| JP5357063B2 (ja) | 2013-12-04 |
| CN102623474B (zh) | 2015-08-05 |
| US8294187B2 (en) | 2012-10-23 |
| CN101647118A (zh) | 2010-02-10 |
| KR20090121322A (ko) | 2009-11-25 |
| CN101647118B (zh) | 2012-06-27 |
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