CN101647118B - 像素面积减小的图像传感器 - Google Patents

像素面积减小的图像传感器 Download PDF

Info

Publication number
CN101647118B
CN101647118B CN2008800084283A CN200880008428A CN101647118B CN 101647118 B CN101647118 B CN 101647118B CN 2008800084283 A CN2008800084283 A CN 2008800084283A CN 200880008428 A CN200880008428 A CN 200880008428A CN 101647118 B CN101647118 B CN 101647118B
Authority
CN
China
Prior art keywords
node
electric charge
power supply
voltage conversion
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008800084283A
Other languages
English (en)
Chinese (zh)
Other versions
CN101647118A (zh
Inventor
C·帕克斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision Technologies Inc
Original Assignee
Eastman Kodak Co
Omnivision Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co, Omnivision Technologies Inc filed Critical Eastman Kodak Co
Priority to CN201210102673.9A priority Critical patent/CN102623474B/zh
Publication of CN101647118A publication Critical patent/CN101647118A/zh
Application granted granted Critical
Publication of CN101647118B publication Critical patent/CN101647118B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2008800084283A 2007-03-15 2008-02-20 像素面积减小的图像传感器 Active CN101647118B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210102673.9A CN102623474B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/686,573 2007-03-15
US11/686,573 US7915702B2 (en) 2007-03-15 2007-03-15 Reduced pixel area image sensor
PCT/US2008/002235 WO2008115331A1 (en) 2007-03-15 2008-02-20 Reduced pixel area image sensor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210102673.9A Division CN102623474B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器

Publications (2)

Publication Number Publication Date
CN101647118A CN101647118A (zh) 2010-02-10
CN101647118B true CN101647118B (zh) 2012-06-27

Family

ID=39491702

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2008800084283A Active CN101647118B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器
CN201210102673.9A Active CN102623474B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201210102673.9A Active CN102623474B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器

Country Status (7)

Country Link
US (2) US7915702B2 (enExample)
EP (1) EP2118930B1 (enExample)
JP (1) JP5357063B2 (enExample)
KR (1) KR101398767B1 (enExample)
CN (2) CN101647118B (enExample)
TW (2) TWI559514B (enExample)
WO (1) WO2008115331A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7924333B2 (en) * 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
JP5408954B2 (ja) * 2008-10-17 2014-02-05 キヤノン株式会社 撮像装置、及び撮像システム
GB2466213B (en) * 2008-12-12 2013-03-06 Cmosis Nv Pixel array with shared readout circuitry
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP2010206173A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2010206172A (ja) * 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5537172B2 (ja) * 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP5377549B2 (ja) * 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
JP6074770B2 (ja) 2011-07-14 2017-02-08 国立大学法人豊橋技術科学大学 化学・物理現象検出方法及びその装置
DE102011120099B4 (de) 2011-12-02 2024-05-29 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor und Verfahren zum Auslesen eines Bildsensors
JP5953087B2 (ja) * 2012-01-17 2016-07-13 オリンパス株式会社 固体撮像装置、撮像装置および固体撮像装置の製造方法
CN103208501B (zh) 2012-01-17 2017-07-28 奥林巴斯株式会社 固体摄像装置及其制造方法、摄像装置、基板、半导体装置
WO2014002366A1 (ja) 2012-06-27 2014-01-03 パナソニック株式会社 固体撮像装置
JP5962533B2 (ja) * 2013-02-13 2016-08-03 ソニー株式会社 固体撮像素子、駆動方法、および撮像装置
US9319613B2 (en) * 2013-12-05 2016-04-19 Omnivision Technologies, Inc. Image sensor having NMOS source follower with P-type doping in polysilicon gate
CN105100654B (zh) * 2015-09-18 2018-02-23 中国科学院高能物理研究所 一种像素单元电路及像素读出芯片
KR102701855B1 (ko) 2016-12-28 2024-09-02 삼성전자주식회사 이미지 센서
JP7467061B2 (ja) * 2019-10-09 2024-04-15 株式会社ジャパンディスプレイ 検出装置
KR20210114786A (ko) * 2020-03-11 2021-09-24 에스케이하이닉스 주식회사 이미지 센서
TW202249269A (zh) 2021-04-08 2022-12-16 美商寬騰矽公司 具有鏡像像素組態之積體電路
WO2023137680A1 (en) * 2022-01-21 2023-07-27 Huawei Technologies Co.,Ltd. Imaging device array

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0757475A2 (en) * 1995-08-02 1997-02-05 Canon Kabushiki Kaisha Solid-state image sensing device with common output line
EP1713250A2 (en) * 2005-04-14 2006-10-18 Sharp Kabushiki Kaisha Amplifying solid-state imaging device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5949061A (en) * 1997-02-27 1999-09-07 Eastman Kodak Company Active pixel sensor with switched supply row select
EP0809394B1 (en) * 1996-05-22 2008-02-13 Eastman Kodak Company Active pixel sensor with switched supply row select
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
US6160281A (en) * 1997-02-28 2000-12-12 Eastman Kodak Company Active pixel sensor with inter-pixel function sharing
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3466886B2 (ja) * 1997-10-06 2003-11-17 キヤノン株式会社 固体撮像装置
JP4006111B2 (ja) * 1998-09-28 2007-11-14 キヤノン株式会社 固体撮像装置
US6218656B1 (en) * 1998-12-30 2001-04-17 Eastman Kodak Company Photodiode active pixel sensor with shared reset signal row select
US6624850B1 (en) * 1998-12-30 2003-09-23 Eastman Kodak Company Photogate active pixel sensor with high fill factor and correlated double sampling
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
US6541794B1 (en) * 2000-08-31 2003-04-01 Motorola, Inc. Imaging device and method
US7187410B2 (en) * 2001-03-05 2007-03-06 Matsushita Electric Industrial Co., Ltd. Solid state image sensor
US6855937B2 (en) * 2001-05-18 2005-02-15 Canon Kabushiki Kaisha Image pickup apparatus
US6720942B2 (en) * 2002-02-12 2004-04-13 Eastman Kodak Company Flat-panel light emitting pixel with luminance feedback
US7183531B2 (en) * 2004-03-31 2007-02-27 Micron Technology, Inc. Amplification with feedback capacitance for photodetector signals
US20060103749A1 (en) * 2004-11-12 2006-05-18 Xinping He Image sensor and pixel that has switchable capacitance at the floating node
JP4768305B2 (ja) * 2005-04-15 2011-09-07 岩手東芝エレクトロニクス株式会社 固体撮像装置
JP5247007B2 (ja) * 2005-06-09 2013-07-24 キヤノン株式会社 撮像装置及び撮像システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0757475A2 (en) * 1995-08-02 1997-02-05 Canon Kabushiki Kaisha Solid-state image sensing device with common output line
EP1713250A2 (en) * 2005-04-14 2006-10-18 Sharp Kabushiki Kaisha Amplifying solid-state imaging device

Also Published As

Publication number Publication date
TWI418021B (zh) 2013-12-01
HK1171870A1 (en) 2013-04-05
KR20090121322A (ko) 2009-11-25
KR101398767B1 (ko) 2014-05-27
US20080225148A1 (en) 2008-09-18
US8294187B2 (en) 2012-10-23
WO2008115331A1 (en) 2008-09-25
EP2118930B1 (en) 2015-01-14
CN101647118A (zh) 2010-02-10
US20110122307A1 (en) 2011-05-26
TW201407759A (zh) 2014-02-16
JP2010521812A (ja) 2010-06-24
TWI559514B (zh) 2016-11-21
CN102623474A (zh) 2012-08-01
CN102623474B (zh) 2015-08-05
US7915702B2 (en) 2011-03-29
JP5357063B2 (ja) 2013-12-04
EP2118930A1 (en) 2009-11-18
TW200903789A (en) 2009-01-16

Similar Documents

Publication Publication Date Title
CN101647118B (zh) 像素面积减小的图像传感器
CN101452942B (zh) 固态成像装置和相机
JP5486639B2 (ja) イメージセンサに関する方法
US8362532B2 (en) Small pixel for CMOS image sensors with vertically integrated set and reset diodes
JP5558801B2 (ja) 固体撮像装置
JP2006073736A (ja) 光電変換装置、固体撮像装置及び固体撮像システム
CN101292521A (zh) 在四路共享像素上提供两路共享存储栅极的方法和装置
CN101292515A (zh) 在四路共享像素上提供两路共享存储栅极的方法和装置
KR100820520B1 (ko) 고체촬상장치
KR100801758B1 (ko) 이미지 센서 및 그 제어 방법
HK1171870B (en) Reduced pixel area image sensor

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: FULL VISION TECHNOLOGY CO., LTD.

Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK

Effective date: 20110705

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: STATE OF NEW YORK, THE USA TO: STATE OF CALIFORNIA, THE USA

TA01 Transfer of patent application right

Effective date of registration: 20110705

Address after: California, USA

Applicant after: Full Vision Technology Co., Ltd.

Address before: American New York

Applicant before: Eastman Kodak Co.

C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: OmniVision Technologies, Inc.

Address before: California, USA

Patentee before: Full Vision Technology Co., Ltd.

CP01 Change in the name or title of a patent holder