KR101398767B1 - 축소된 픽셀 영역 이미지 센서 - Google Patents

축소된 픽셀 영역 이미지 센서 Download PDF

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KR101398767B1
KR101398767B1 KR1020097019118A KR20097019118A KR101398767B1 KR 101398767 B1 KR101398767 B1 KR 101398767B1 KR 1020097019118 A KR1020097019118 A KR 1020097019118A KR 20097019118 A KR20097019118 A KR 20097019118A KR 101398767 B1 KR101398767 B1 KR 101398767B1
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charge
node
power supply
gate
voltage conversion
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Korean (ko)
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KR20090121322A (ko
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크리스토퍼 팍스
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020097019118A 2007-03-15 2008-02-20 축소된 픽셀 영역 이미지 센서 Active KR101398767B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/686,573 2007-03-15
US11/686,573 US7915702B2 (en) 2007-03-15 2007-03-15 Reduced pixel area image sensor
PCT/US2008/002235 WO2008115331A1 (en) 2007-03-15 2008-02-20 Reduced pixel area image sensor

Publications (2)

Publication Number Publication Date
KR20090121322A KR20090121322A (ko) 2009-11-25
KR101398767B1 true KR101398767B1 (ko) 2014-05-27

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KR1020097019118A Active KR101398767B1 (ko) 2007-03-15 2008-02-20 축소된 픽셀 영역 이미지 센서

Country Status (7)

Country Link
US (2) US7915702B2 (enExample)
EP (1) EP2118930B1 (enExample)
JP (1) JP5357063B2 (enExample)
KR (1) KR101398767B1 (enExample)
CN (2) CN101647118B (enExample)
TW (2) TWI559514B (enExample)
WO (1) WO2008115331A1 (enExample)

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US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
JP5408954B2 (ja) * 2008-10-17 2014-02-05 キヤノン株式会社 撮像装置、及び撮像システム
GB2466213B (en) * 2008-12-12 2013-03-06 Cmosis Nv Pixel array with shared readout circuitry
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP2010206173A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2010206172A (ja) * 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5537172B2 (ja) * 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP5377549B2 (ja) * 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
JP6074770B2 (ja) 2011-07-14 2017-02-08 国立大学法人豊橋技術科学大学 化学・物理現象検出方法及びその装置
DE102011120099B4 (de) 2011-12-02 2024-05-29 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor und Verfahren zum Auslesen eines Bildsensors
JP5953087B2 (ja) * 2012-01-17 2016-07-13 オリンパス株式会社 固体撮像装置、撮像装置および固体撮像装置の製造方法
CN103208501B (zh) 2012-01-17 2017-07-28 奥林巴斯株式会社 固体摄像装置及其制造方法、摄像装置、基板、半导体装置
WO2014002366A1 (ja) 2012-06-27 2014-01-03 パナソニック株式会社 固体撮像装置
JP5962533B2 (ja) * 2013-02-13 2016-08-03 ソニー株式会社 固体撮像素子、駆動方法、および撮像装置
US9319613B2 (en) * 2013-12-05 2016-04-19 Omnivision Technologies, Inc. Image sensor having NMOS source follower with P-type doping in polysilicon gate
CN105100654B (zh) * 2015-09-18 2018-02-23 中国科学院高能物理研究所 一种像素单元电路及像素读出芯片
KR102701855B1 (ko) 2016-12-28 2024-09-02 삼성전자주식회사 이미지 센서
JP7467061B2 (ja) * 2019-10-09 2024-04-15 株式会社ジャパンディスプレイ 検出装置
KR20210114786A (ko) * 2020-03-11 2021-09-24 에스케이하이닉스 주식회사 이미지 센서
TW202249269A (zh) 2021-04-08 2022-12-16 美商寬騰矽公司 具有鏡像像素組態之積體電路
WO2023137680A1 (en) * 2022-01-21 2023-07-27 Huawei Technologies Co.,Ltd. Imaging device array

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KR19990023548A (ko) * 1997-08-15 1999-03-25 그윈넬 해리 제이 화상 센서 및 고체 화상 감지 디바이스 제조 방법

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KR19990023548A (ko) * 1997-08-15 1999-03-25 그윈넬 해리 제이 화상 센서 및 고체 화상 감지 디바이스 제조 방법

Also Published As

Publication number Publication date
TWI418021B (zh) 2013-12-01
HK1171870A1 (en) 2013-04-05
KR20090121322A (ko) 2009-11-25
US20080225148A1 (en) 2008-09-18
US8294187B2 (en) 2012-10-23
WO2008115331A1 (en) 2008-09-25
EP2118930B1 (en) 2015-01-14
CN101647118A (zh) 2010-02-10
US20110122307A1 (en) 2011-05-26
TW201407759A (zh) 2014-02-16
JP2010521812A (ja) 2010-06-24
TWI559514B (zh) 2016-11-21
CN102623474A (zh) 2012-08-01
CN102623474B (zh) 2015-08-05
US7915702B2 (en) 2011-03-29
JP5357063B2 (ja) 2013-12-04
CN101647118B (zh) 2012-06-27
EP2118930A1 (en) 2009-11-18
TW200903789A (en) 2009-01-16

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