JP5357063B2 - 画像センサ - Google Patents

画像センサ Download PDF

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Publication number
JP5357063B2
JP5357063B2 JP2009553578A JP2009553578A JP5357063B2 JP 5357063 B2 JP5357063 B2 JP 5357063B2 JP 2009553578 A JP2009553578 A JP 2009553578A JP 2009553578 A JP2009553578 A JP 2009553578A JP 5357063 B2 JP5357063 B2 JP 5357063B2
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charge
node
pixel
gate
transistor
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JP2009553578A
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Japanese (ja)
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JP2010521812A (ja
JP2010521812A5 (enExample
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クリストファー パークス
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オムニヴィジョン テクノロジーズ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009553578A 2007-03-15 2008-02-20 画像センサ Active JP5357063B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/686,573 2007-03-15
US11/686,573 US7915702B2 (en) 2007-03-15 2007-03-15 Reduced pixel area image sensor
PCT/US2008/002235 WO2008115331A1 (en) 2007-03-15 2008-02-20 Reduced pixel area image sensor

Publications (3)

Publication Number Publication Date
JP2010521812A JP2010521812A (ja) 2010-06-24
JP2010521812A5 JP2010521812A5 (enExample) 2011-04-14
JP5357063B2 true JP5357063B2 (ja) 2013-12-04

Family

ID=39491702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009553578A Active JP5357063B2 (ja) 2007-03-15 2008-02-20 画像センサ

Country Status (7)

Country Link
US (2) US7915702B2 (enExample)
EP (1) EP2118930B1 (enExample)
JP (1) JP5357063B2 (enExample)
KR (1) KR101398767B1 (enExample)
CN (2) CN102623474B (enExample)
TW (2) TWI559514B (enExample)
WO (1) WO2008115331A1 (enExample)

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US7924333B2 (en) * 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
JP5408954B2 (ja) * 2008-10-17 2014-02-05 キヤノン株式会社 撮像装置、及び撮像システム
GB2466213B (en) * 2008-12-12 2013-03-06 Cmosis Nv Pixel array with shared readout circuitry
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP2010206173A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2010206172A (ja) * 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5537172B2 (ja) * 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP5377549B2 (ja) * 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
EP2733483B1 (en) * 2011-07-14 2020-04-29 National University Corporation Toyohashi University of Technology Method for detecting chemical or physical phenomenon and device therefor
DE102011120099B4 (de) 2011-12-02 2024-05-29 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor und Verfahren zum Auslesen eines Bildsensors
CN103208501B (zh) 2012-01-17 2017-07-28 奥林巴斯株式会社 固体摄像装置及其制造方法、摄像装置、基板、半导体装置
JP5953087B2 (ja) * 2012-01-17 2016-07-13 オリンパス株式会社 固体撮像装置、撮像装置および固体撮像装置の製造方法
WO2014002366A1 (ja) * 2012-06-27 2014-01-03 パナソニック株式会社 固体撮像装置
JP5962533B2 (ja) * 2013-02-13 2016-08-03 ソニー株式会社 固体撮像素子、駆動方法、および撮像装置
US9319613B2 (en) * 2013-12-05 2016-04-19 Omnivision Technologies, Inc. Image sensor having NMOS source follower with P-type doping in polysilicon gate
CN105100654B (zh) * 2015-09-18 2018-02-23 中国科学院高能物理研究所 一种像素单元电路及像素读出芯片
KR102701855B1 (ko) 2016-12-28 2024-09-02 삼성전자주식회사 이미지 센서
JP7467061B2 (ja) * 2019-10-09 2024-04-15 株式会社ジャパンディスプレイ 検出装置
KR20210114786A (ko) * 2020-03-11 2021-09-24 에스케이하이닉스 주식회사 이미지 센서
US20220328541A1 (en) 2021-04-08 2022-10-13 Quantum-Si Incorporated Integrated circuit having mirrored pixel configuration
WO2023137680A1 (en) * 2022-01-21 2023-07-27 Huawei Technologies Co.,Ltd. Imaging device array

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US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3466886B2 (ja) * 1997-10-06 2003-11-17 キヤノン株式会社 固体撮像装置
JP4006111B2 (ja) 1998-09-28 2007-11-14 キヤノン株式会社 固体撮像装置
US6624850B1 (en) * 1998-12-30 2003-09-23 Eastman Kodak Company Photogate active pixel sensor with high fill factor and correlated double sampling
US6218656B1 (en) * 1998-12-30 2001-04-17 Eastman Kodak Company Photodiode active pixel sensor with shared reset signal row select
US6657665B1 (en) 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
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US7187410B2 (en) * 2001-03-05 2007-03-06 Matsushita Electric Industrial Co., Ltd. Solid state image sensor
US6855937B2 (en) * 2001-05-18 2005-02-15 Canon Kabushiki Kaisha Image pickup apparatus
US6720942B2 (en) * 2002-02-12 2004-04-13 Eastman Kodak Company Flat-panel light emitting pixel with luminance feedback
US7183531B2 (en) * 2004-03-31 2007-02-27 Micron Technology, Inc. Amplification with feedback capacitance for photodetector signals
US20060103749A1 (en) * 2004-11-12 2006-05-18 Xinping He Image sensor and pixel that has switchable capacitance at the floating node
JP4340660B2 (ja) 2005-04-14 2009-10-07 シャープ株式会社 増幅型固体撮像装置
JP4768305B2 (ja) 2005-04-15 2011-09-07 岩手東芝エレクトロニクス株式会社 固体撮像装置
JP5247007B2 (ja) 2005-06-09 2013-07-24 キヤノン株式会社 撮像装置及び撮像システム

Also Published As

Publication number Publication date
JP2010521812A (ja) 2010-06-24
EP2118930B1 (en) 2015-01-14
TWI418021B (zh) 2013-12-01
HK1171870A1 (en) 2013-04-05
TW201407759A (zh) 2014-02-16
US20080225148A1 (en) 2008-09-18
KR101398767B1 (ko) 2014-05-27
WO2008115331A1 (en) 2008-09-25
CN102623474A (zh) 2012-08-01
TW200903789A (en) 2009-01-16
EP2118930A1 (en) 2009-11-18
US20110122307A1 (en) 2011-05-26
US7915702B2 (en) 2011-03-29
CN102623474B (zh) 2015-08-05
US8294187B2 (en) 2012-10-23
CN101647118A (zh) 2010-02-10
TWI559514B (zh) 2016-11-21
KR20090121322A (ko) 2009-11-25
CN101647118B (zh) 2012-06-27

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