CN102623474B - 像素面积减小的图像传感器 - Google Patents

像素面积减小的图像传感器 Download PDF

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Publication number
CN102623474B
CN102623474B CN201210102673.9A CN201210102673A CN102623474B CN 102623474 B CN102623474 B CN 102623474B CN 201210102673 A CN201210102673 A CN 201210102673A CN 102623474 B CN102623474 B CN 102623474B
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Prior art keywords
transistor
row
pixel
floating diffusion
output line
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CN201210102673.9A
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Chinese (zh)
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CN102623474A (zh
Inventor
C.帕克斯
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Omnivision Technologies Inc
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Omnivision Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201210102673.9A 2007-03-15 2008-02-20 像素面积减小的图像传感器 Active CN102623474B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/686,573 US7915702B2 (en) 2007-03-15 2007-03-15 Reduced pixel area image sensor
US11/686573 2007-03-15
CN2008800084283A CN101647118B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008800084283A Division CN101647118B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器

Publications (2)

Publication Number Publication Date
CN102623474A CN102623474A (zh) 2012-08-01
CN102623474B true CN102623474B (zh) 2015-08-05

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CN2008800084283A Active CN101647118B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器
CN201210102673.9A Active CN102623474B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器

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CN2008800084283A Active CN101647118B (zh) 2007-03-15 2008-02-20 像素面积减小的图像传感器

Country Status (7)

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US (2) US7915702B2 (enExample)
EP (1) EP2118930B1 (enExample)
JP (1) JP5357063B2 (enExample)
KR (1) KR101398767B1 (enExample)
CN (2) CN101647118B (enExample)
TW (2) TWI559514B (enExample)
WO (1) WO2008115331A1 (enExample)

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JP5408954B2 (ja) * 2008-10-17 2014-02-05 キヤノン株式会社 撮像装置、及び撮像システム
GB2466213B (en) * 2008-12-12 2013-03-06 Cmosis Nv Pixel array with shared readout circuitry
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP2010206173A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2010206172A (ja) * 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5537172B2 (ja) * 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP5377549B2 (ja) * 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
JP6074770B2 (ja) 2011-07-14 2017-02-08 国立大学法人豊橋技術科学大学 化学・物理現象検出方法及びその装置
DE102011120099B4 (de) 2011-12-02 2024-05-29 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor und Verfahren zum Auslesen eines Bildsensors
JP5953087B2 (ja) * 2012-01-17 2016-07-13 オリンパス株式会社 固体撮像装置、撮像装置および固体撮像装置の製造方法
CN103208501B (zh) 2012-01-17 2017-07-28 奥林巴斯株式会社 固体摄像装置及其制造方法、摄像装置、基板、半导体装置
WO2014002366A1 (ja) 2012-06-27 2014-01-03 パナソニック株式会社 固体撮像装置
JP5962533B2 (ja) * 2013-02-13 2016-08-03 ソニー株式会社 固体撮像素子、駆動方法、および撮像装置
US9319613B2 (en) * 2013-12-05 2016-04-19 Omnivision Technologies, Inc. Image sensor having NMOS source follower with P-type doping in polysilicon gate
CN105100654B (zh) * 2015-09-18 2018-02-23 中国科学院高能物理研究所 一种像素单元电路及像素读出芯片
KR102701855B1 (ko) 2016-12-28 2024-09-02 삼성전자주식회사 이미지 센서
JP7467061B2 (ja) * 2019-10-09 2024-04-15 株式会社ジャパンディスプレイ 検出装置
KR20210114786A (ko) * 2020-03-11 2021-09-24 에스케이하이닉스 주식회사 이미지 센서
TW202249269A (zh) 2021-04-08 2022-12-16 美商寬騰矽公司 具有鏡像像素組態之積體電路
WO2023137680A1 (en) * 2022-01-21 2023-07-27 Huawei Technologies Co.,Ltd. Imaging device array

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CN1387264A (zh) * 2001-05-18 2002-12-25 佳能株式会社 摄像装置
EP1335430A1 (en) * 2002-02-12 2003-08-13 Eastman Kodak Company A flat-panel light emitting pixel with luminance feedback
EP1713250A2 (en) * 2005-04-14 2006-10-18 Sharp Kabushiki Kaisha Amplifying solid-state imaging device

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CN1374702A (zh) * 2001-03-05 2002-10-16 松下电器产业株式会社 固体摄象装置
CN1387264A (zh) * 2001-05-18 2002-12-25 佳能株式会社 摄像装置
EP1335430A1 (en) * 2002-02-12 2003-08-13 Eastman Kodak Company A flat-panel light emitting pixel with luminance feedback
EP1713250A2 (en) * 2005-04-14 2006-10-18 Sharp Kabushiki Kaisha Amplifying solid-state imaging device

Also Published As

Publication number Publication date
TWI418021B (zh) 2013-12-01
HK1171870A1 (en) 2013-04-05
KR20090121322A (ko) 2009-11-25
KR101398767B1 (ko) 2014-05-27
US20080225148A1 (en) 2008-09-18
US8294187B2 (en) 2012-10-23
WO2008115331A1 (en) 2008-09-25
EP2118930B1 (en) 2015-01-14
CN101647118A (zh) 2010-02-10
US20110122307A1 (en) 2011-05-26
TW201407759A (zh) 2014-02-16
JP2010521812A (ja) 2010-06-24
TWI559514B (zh) 2016-11-21
CN102623474A (zh) 2012-08-01
US7915702B2 (en) 2011-03-29
JP5357063B2 (ja) 2013-12-04
CN101647118B (zh) 2012-06-27
EP2118930A1 (en) 2009-11-18
TW200903789A (en) 2009-01-16

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