CN102623474B - 像素面积减小的图像传感器 - Google Patents
像素面积减小的图像传感器 Download PDFInfo
- Publication number
- CN102623474B CN102623474B CN201210102673.9A CN201210102673A CN102623474B CN 102623474 B CN102623474 B CN 102623474B CN 201210102673 A CN201210102673 A CN 201210102673A CN 102623474 B CN102623474 B CN 102623474B
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- transistor
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- pixel
- output line
- floating diffusion
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- 238000009792 diffusion process Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005070 sampling Methods 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/686573 | 2007-03-15 | ||
US11/686,573 US7915702B2 (en) | 2007-03-15 | 2007-03-15 | Reduced pixel area image sensor |
CN2008800084283A CN101647118B (zh) | 2007-03-15 | 2008-02-20 | 像素面积减小的图像传感器 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800084283A Division CN101647118B (zh) | 2007-03-15 | 2008-02-20 | 像素面积减小的图像传感器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102623474A CN102623474A (zh) | 2012-08-01 |
CN102623474B true CN102623474B (zh) | 2015-08-05 |
Family
ID=39491702
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210102673.9A Active CN102623474B (zh) | 2007-03-15 | 2008-02-20 | 像素面积减小的图像传感器 |
CN2008800084283A Active CN101647118B (zh) | 2007-03-15 | 2008-02-20 | 像素面积减小的图像传感器 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800084283A Active CN101647118B (zh) | 2007-03-15 | 2008-02-20 | 像素面积减小的图像传感器 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7915702B2 (zh) |
EP (1) | EP2118930B1 (zh) |
JP (1) | JP5357063B2 (zh) |
KR (1) | KR101398767B1 (zh) |
CN (2) | CN102623474B (zh) |
HK (1) | HK1171870A1 (zh) |
TW (2) | TWI559514B (zh) |
WO (1) | WO2008115331A1 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7924333B2 (en) * | 2007-08-17 | 2011-04-12 | Aptina Imaging Corporation | Method and apparatus providing shared pixel straight gate architecture |
US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
JP5408954B2 (ja) * | 2008-10-17 | 2014-02-05 | キヤノン株式会社 | 撮像装置、及び撮像システム |
GB2466213B (en) * | 2008-12-12 | 2013-03-06 | Cmosis Nv | Pixel array with shared readout circuitry |
JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP2010206172A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 撮像装置およびカメラ |
JP2010206173A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびカメラ |
JP2010206174A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびその製造方法ならびにカメラ |
JP5564874B2 (ja) * | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
JP5537172B2 (ja) * | 2010-01-28 | 2014-07-02 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP5377549B2 (ja) * | 2011-03-03 | 2013-12-25 | 株式会社東芝 | 固体撮像装置 |
US9766202B2 (en) | 2011-07-14 | 2017-09-19 | National University Corporation Toyohashi University Of Technology | Method for detecting chemical and physical phenomenon, and device therefor |
DE102011120099B4 (de) | 2011-12-02 | 2024-05-29 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor und Verfahren zum Auslesen eines Bildsensors |
CN103208501B (zh) | 2012-01-17 | 2017-07-28 | 奥林巴斯株式会社 | 固体摄像装置及其制造方法、摄像装置、基板、半导体装置 |
JP5953087B2 (ja) * | 2012-01-17 | 2016-07-13 | オリンパス株式会社 | 固体撮像装置、撮像装置および固体撮像装置の製造方法 |
WO2014002366A1 (ja) * | 2012-06-27 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置 |
JP5962533B2 (ja) * | 2013-02-13 | 2016-08-03 | ソニー株式会社 | 固体撮像素子、駆動方法、および撮像装置 |
US9319613B2 (en) * | 2013-12-05 | 2016-04-19 | Omnivision Technologies, Inc. | Image sensor having NMOS source follower with P-type doping in polysilicon gate |
CN105100654B (zh) * | 2015-09-18 | 2018-02-23 | 中国科学院高能物理研究所 | 一种像素单元电路及像素读出芯片 |
KR20180076845A (ko) | 2016-12-28 | 2018-07-06 | 삼성전자주식회사 | 이미지 센서 |
KR20210114786A (ko) * | 2020-03-11 | 2021-09-24 | 에스케이하이닉스 주식회사 | 이미지 센서 |
WO2023137680A1 (en) * | 2022-01-21 | 2023-07-27 | Huawei Technologies Co.,Ltd. | Imaging device array |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1374702A (zh) * | 2001-03-05 | 2002-10-16 | 松下电器产业株式会社 | 固体摄象装置 |
CN1387264A (zh) * | 2001-05-18 | 2002-12-25 | 佳能株式会社 | 摄像装置 |
EP1335430A1 (en) * | 2002-02-12 | 2003-08-13 | Eastman Kodak Company | A flat-panel light emitting pixel with luminance feedback |
EP1713250A2 (en) * | 2005-04-14 | 2006-10-18 | Sharp Kabushiki Kaisha | Amplifying solid-state imaging device |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5625210A (en) | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
ES2211937T3 (es) | 1995-08-02 | 2004-07-16 | Canon Kabushiki Kaisha | Dispositivo sensor de imagenes de estado solido con linea de salida comun. |
EP0809394B1 (en) * | 1996-05-22 | 2008-02-13 | Eastman Kodak Company | Active pixel sensor with switched supply row select |
US5949061A (en) | 1997-02-27 | 1999-09-07 | Eastman Kodak Company | Active pixel sensor with switched supply row select |
US5903021A (en) * | 1997-01-17 | 1999-05-11 | Eastman Kodak Company | Partially pinned photodiode for solid state image sensors |
US6160281A (en) | 1997-02-28 | 2000-12-12 | Eastman Kodak Company | Active pixel sensor with inter-pixel function sharing |
US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
JP3466886B2 (ja) * | 1997-10-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
JP4006111B2 (ja) | 1998-09-28 | 2007-11-14 | キヤノン株式会社 | 固体撮像装置 |
US6624850B1 (en) * | 1998-12-30 | 2003-09-23 | Eastman Kodak Company | Photogate active pixel sensor with high fill factor and correlated double sampling |
US6218656B1 (en) * | 1998-12-30 | 2001-04-17 | Eastman Kodak Company | Photodiode active pixel sensor with shared reset signal row select |
US6657665B1 (en) | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
US6541794B1 (en) * | 2000-08-31 | 2003-04-01 | Motorola, Inc. | Imaging device and method |
US7183531B2 (en) * | 2004-03-31 | 2007-02-27 | Micron Technology, Inc. | Amplification with feedback capacitance for photodetector signals |
US20060103749A1 (en) * | 2004-11-12 | 2006-05-18 | Xinping He | Image sensor and pixel that has switchable capacitance at the floating node |
JP4768305B2 (ja) | 2005-04-15 | 2011-09-07 | 岩手東芝エレクトロニクス株式会社 | 固体撮像装置 |
JP5247007B2 (ja) | 2005-06-09 | 2013-07-24 | キヤノン株式会社 | 撮像装置及び撮像システム |
-
2007
- 2007-03-15 US US11/686,573 patent/US7915702B2/en active Active
-
2008
- 2008-02-20 JP JP2009553578A patent/JP5357063B2/ja active Active
- 2008-02-20 WO PCT/US2008/002235 patent/WO2008115331A1/en active Application Filing
- 2008-02-20 CN CN201210102673.9A patent/CN102623474B/zh active Active
- 2008-02-20 KR KR1020097019118A patent/KR101398767B1/ko active IP Right Grant
- 2008-02-20 CN CN2008800084283A patent/CN101647118B/zh active Active
- 2008-02-20 EP EP08725828.1A patent/EP2118930B1/en active Active
- 2008-03-14 TW TW102139161A patent/TWI559514B/zh active
- 2008-03-14 TW TW097109186A patent/TWI418021B/zh active
-
2011
- 2011-01-26 US US13/014,336 patent/US8294187B2/en active Active
-
2012
- 2012-12-07 HK HK12112671.7A patent/HK1171870A1/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1374702A (zh) * | 2001-03-05 | 2002-10-16 | 松下电器产业株式会社 | 固体摄象装置 |
CN1387264A (zh) * | 2001-05-18 | 2002-12-25 | 佳能株式会社 | 摄像装置 |
EP1335430A1 (en) * | 2002-02-12 | 2003-08-13 | Eastman Kodak Company | A flat-panel light emitting pixel with luminance feedback |
EP1713250A2 (en) * | 2005-04-14 | 2006-10-18 | Sharp Kabushiki Kaisha | Amplifying solid-state imaging device |
Also Published As
Publication number | Publication date |
---|---|
US20080225148A1 (en) | 2008-09-18 |
WO2008115331A1 (en) | 2008-09-25 |
US8294187B2 (en) | 2012-10-23 |
JP2010521812A (ja) | 2010-06-24 |
US20110122307A1 (en) | 2011-05-26 |
KR20090121322A (ko) | 2009-11-25 |
US7915702B2 (en) | 2011-03-29 |
TW201407759A (zh) | 2014-02-16 |
CN102623474A (zh) | 2012-08-01 |
CN101647118A (zh) | 2010-02-10 |
TWI559514B (zh) | 2016-11-21 |
JP5357063B2 (ja) | 2013-12-04 |
TW200903789A (en) | 2009-01-16 |
EP2118930B1 (en) | 2015-01-14 |
KR101398767B1 (ko) | 2014-05-27 |
EP2118930A1 (en) | 2009-11-18 |
HK1171870A1 (zh) | 2013-04-05 |
CN101647118B (zh) | 2012-06-27 |
TWI418021B (zh) | 2013-12-01 |
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Address after: American California Patentee after: OmniVision Technologies, Inc. Address before: American California Patentee before: Full Vision Technology Co., Ltd. |