TWI550907B - 半導體結構之歐姆接點 - Google Patents

半導體結構之歐姆接點 Download PDF

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Publication number
TWI550907B
TWI550907B TW100118367A TW100118367A TWI550907B TW I550907 B TWI550907 B TW I550907B TW 100118367 A TW100118367 A TW 100118367A TW 100118367 A TW100118367 A TW 100118367A TW I550907 B TWI550907 B TW I550907B
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TW
Taiwan
Prior art keywords
tial
semiconductor structure
semiconductor
aluminum
ohmic junction
Prior art date
Application number
TW100118367A
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English (en)
Chinese (zh)
Other versions
TW201208123A (en
Inventor
胡永軍
約翰 馬克 麥爾軍
牟善明
艾略特 艾倫 麥堤爾
Original Assignee
美光科技公司
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Application filed by 美光科技公司 filed Critical 美光科技公司
Publication of TW201208123A publication Critical patent/TW201208123A/zh
Application granted granted Critical
Publication of TWI550907B publication Critical patent/TWI550907B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
TW100118367A 2010-05-25 2011-05-25 半導體結構之歐姆接點 TWI550907B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/787,211 US20110291147A1 (en) 2010-05-25 2010-05-25 Ohmic contacts for semiconductor structures

Publications (2)

Publication Number Publication Date
TW201208123A TW201208123A (en) 2012-02-16
TWI550907B true TWI550907B (zh) 2016-09-21

Family

ID=45004777

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100118367A TWI550907B (zh) 2010-05-25 2011-05-25 半導體結構之歐姆接點

Country Status (7)

Country Link
US (6) US20110291147A1 (enExample)
JP (1) JP2013528947A (enExample)
KR (1) KR20130071440A (enExample)
CN (1) CN102947956B (enExample)
SG (1) SG185718A1 (enExample)
TW (1) TWI550907B (enExample)
WO (1) WO2011150089A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10446727B2 (en) 2010-05-25 2019-10-15 Micron Technology, Inc. Ohmic contacts for semiconductor structures

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5236787B2 (ja) * 2011-09-27 2013-07-17 シャープ株式会社 窒化物半導体装置およびその製造方法
CN106129216A (zh) * 2012-11-16 2016-11-16 大连美明外延片科技有限公司 一种四元AlGaInP发光二极管芯片及其制造方法
US9419181B2 (en) * 2013-05-13 2016-08-16 Infineon Technologies Dresden Gmbh Electrode, an electronic device, and a method for manufacturing an optoelectronic device
US9425050B2 (en) 2013-08-16 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for providing an electron blocking layer with doping control
EP2881982B1 (en) 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
JP6444718B2 (ja) * 2014-12-15 2018-12-26 株式会社東芝 半導体装置
CN104979215B (zh) * 2015-06-23 2018-01-02 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及其制备方法
CN105914270B (zh) * 2016-06-28 2018-09-18 聚灿光电科技股份有限公司 硅基氮化镓led外延结构的制造方法
US10032880B2 (en) 2016-10-10 2018-07-24 Semiconductor Components Industries, Llc Method for forming ohmic contacts
TWI622188B (zh) * 2016-12-08 2018-04-21 錼創科技股份有限公司 發光二極體晶片
US10290719B1 (en) 2017-12-27 2019-05-14 International Business Machines Corporation Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to metal electrode
CN115458649B (zh) * 2022-10-21 2025-05-02 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652434A (en) * 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US5763010A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136138A (ja) 1974-09-21 1976-03-26 Ricoh Kk Denshishashinkankozairyo
JP2509713B2 (ja) * 1989-10-18 1996-06-26 シャープ株式会社 炭化珪素半導体装置およびその製造方法
JP3278877B2 (ja) * 1991-11-08 2002-04-30 ソニー株式会社 配線の形成方法
JP2783349B2 (ja) * 1993-07-28 1998-08-06 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
JPH09232632A (ja) * 1995-12-22 1997-09-05 Toshiba Corp 半導体発光素子及びその製造方法
TW367528B (en) * 1996-02-02 1999-08-21 Applied Materials Inc Titanium aluminide wetting layer for aluminum contacts
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
JPH09292285A (ja) * 1996-04-30 1997-11-11 Yamaha Corp 基板温度の測定方法
JPH10125676A (ja) * 1996-10-15 1998-05-15 Fujitsu Ltd アルミニウム配線の作製方法
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3271657B2 (ja) * 1997-10-09 2002-04-02 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体の電極及びその形成方法
KR100333724B1 (ko) * 1998-06-30 2002-09-17 주식회사 하이닉스반도체 티타늄알루미늄나이트라이드반사방지막을이용한반도체소자의금속배선형성방법
JP3974284B2 (ja) * 1999-03-18 2007-09-12 株式会社東芝 半導体装置の製造方法
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
JP4030534B2 (ja) * 2003-07-25 2008-01-09 昭和電工株式会社 化合物半導体発光素子およびその製造方法
JP4539844B2 (ja) * 2004-04-15 2010-09-08 セイコーエプソン株式会社 誘電体キャパシタおよびその製造方法ならびに半導体装置
EP1608191B1 (en) 2004-06-14 2012-12-19 Samsung Electronics Co., Ltd. Power saving system in distributed wireless personal area network and coresponding method
JP4733371B2 (ja) * 2004-08-18 2011-07-27 三菱化学株式会社 ｎ型窒化物半導体用のオーミック電極およびその製造方法
CN101303978A (zh) * 2008-07-04 2008-11-12 西安电子科技大学 适用于氮化镓器件n型欧姆接触的制作方法
CN101369599B (zh) * 2008-07-11 2011-02-16 北京大学 氮化镓基器件的欧姆接触及其制备方法
US20110291147A1 (en) 2010-05-25 2011-12-01 Yongjun Jeff Hu Ohmic contacts for semiconductor structures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652434A (en) * 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US5763010A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10446727B2 (en) 2010-05-25 2019-10-15 Micron Technology, Inc. Ohmic contacts for semiconductor structures
US10998481B2 (en) 2010-05-25 2021-05-04 Micron Technology, Inc. Ohmic contacts for semiconductor structures

Also Published As

Publication number Publication date
US9608185B2 (en) 2017-03-28
SG185718A1 (en) 2012-12-28
US20110291147A1 (en) 2011-12-01
WO2011150089A3 (en) 2012-03-15
US20200035891A1 (en) 2020-01-30
CN102947956A (zh) 2013-02-27
US10446727B2 (en) 2019-10-15
US20210257526A1 (en) 2021-08-19
US20140234996A1 (en) 2014-08-21
US20170117449A1 (en) 2017-04-27
US10998481B2 (en) 2021-05-04
JP2013528947A (ja) 2013-07-11
CN102947956B (zh) 2016-12-28
WO2011150089A2 (en) 2011-12-01
TW201208123A (en) 2012-02-16
KR20130071440A (ko) 2013-06-28
US20250015245A1 (en) 2025-01-09

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