CN102947956B - 用于半导体结构的欧姆触点 - Google Patents

用于半导体结构的欧姆触点 Download PDF

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Publication number
CN102947956B
CN102947956B CN201180031071.2A CN201180031071A CN102947956B CN 102947956 B CN102947956 B CN 102947956B CN 201180031071 A CN201180031071 A CN 201180031071A CN 102947956 B CN102947956 B CN 102947956B
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semiconductor structure
tial
angstroms
aluminum
annealing
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Chinese (zh)
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CN102947956A (zh
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永军·杰夫·胡
约翰·马克·梅尔德里姆
山明·牟
艾弗里特·艾伦·麦克蒂尔
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
CN201180031071.2A 2010-05-25 2011-05-25 用于半导体结构的欧姆触点 Active CN102947956B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/787,211 US20110291147A1 (en) 2010-05-25 2010-05-25 Ohmic contacts for semiconductor structures
US12/787,211 2010-05-25
PCT/US2011/037947 WO2011150089A2 (en) 2010-05-25 2011-05-25 Ohmic contacts for semiconductor structures

Publications (2)

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CN102947956A CN102947956A (zh) 2013-02-27
CN102947956B true CN102947956B (zh) 2016-12-28

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US (6) US20110291147A1 (enExample)
JP (1) JP2013528947A (enExample)
KR (1) KR20130071440A (enExample)
CN (1) CN102947956B (enExample)
SG (1) SG185718A1 (enExample)
TW (1) TWI550907B (enExample)
WO (1) WO2011150089A2 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US10446727B2 (en) 2010-05-25 2019-10-15 Micron Technology, Inc. Ohmic contacts for semiconductor structures

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JP5236787B2 (ja) * 2011-09-27 2013-07-17 シャープ株式会社 窒化物半導体装置およびその製造方法
CN106129216A (zh) * 2012-11-16 2016-11-16 大连美明外延片科技有限公司 一种四元AlGaInP发光二极管芯片及其制造方法
US9419181B2 (en) * 2013-05-13 2016-08-16 Infineon Technologies Dresden Gmbh Electrode, an electronic device, and a method for manufacturing an optoelectronic device
US9425050B2 (en) * 2013-08-16 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for providing an electron blocking layer with doping control
EP2881982B1 (en) 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
JP6444718B2 (ja) * 2014-12-15 2018-12-26 株式会社東芝 半導体装置
CN104979215B (zh) * 2015-06-23 2018-01-02 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及其制备方法
CN105914270B (zh) * 2016-06-28 2018-09-18 聚灿光电科技股份有限公司 硅基氮化镓led外延结构的制造方法
US10032880B2 (en) 2016-10-10 2018-07-24 Semiconductor Components Industries, Llc Method for forming ohmic contacts
TWI622188B (zh) * 2016-12-08 2018-04-21 錼創科技股份有限公司 發光二極體晶片
US10290719B1 (en) 2017-12-27 2019-05-14 International Business Machines Corporation Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to metal electrode
CN115458649B (zh) * 2022-10-21 2025-05-02 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

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US5652434A (en) * 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US5763010A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers

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JP4733371B2 (ja) * 2004-08-18 2011-07-27 三菱化学株式会社 ｎ型窒化物半導体用のオーミック電極およびその製造方法
CN101303978A (zh) * 2008-07-04 2008-11-12 西安电子科技大学 适用于氮化镓器件n型欧姆接触的制作方法
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US20110291147A1 (en) 2010-05-25 2011-12-01 Yongjun Jeff Hu Ohmic contacts for semiconductor structures

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US5652434A (en) * 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US5763010A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10446727B2 (en) 2010-05-25 2019-10-15 Micron Technology, Inc. Ohmic contacts for semiconductor structures
US10998481B2 (en) 2010-05-25 2021-05-04 Micron Technology, Inc. Ohmic contacts for semiconductor structures

Also Published As

Publication number Publication date
TW201208123A (en) 2012-02-16
US20110291147A1 (en) 2011-12-01
SG185718A1 (en) 2012-12-28
US20170117449A1 (en) 2017-04-27
US20250015245A1 (en) 2025-01-09
WO2011150089A2 (en) 2011-12-01
US20200035891A1 (en) 2020-01-30
US9608185B2 (en) 2017-03-28
CN102947956A (zh) 2013-02-27
KR20130071440A (ko) 2013-06-28
US20210257526A1 (en) 2021-08-19
WO2011150089A3 (en) 2012-03-15
US10446727B2 (en) 2019-10-15
US10998481B2 (en) 2021-05-04
JP2013528947A (ja) 2013-07-11
US20140234996A1 (en) 2014-08-21
TWI550907B (zh) 2016-09-21

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