JP2013528947A - 半導体構造用オーミック接触 - Google Patents

半導体構造用オーミック接触 Download PDF

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Publication number
JP2013528947A
JP2013528947A JP2013512212A JP2013512212A JP2013528947A JP 2013528947 A JP2013528947 A JP 2013528947A JP 2013512212 A JP2013512212 A JP 2013512212A JP 2013512212 A JP2013512212 A JP 2013512212A JP 2013528947 A JP2013528947 A JP 2013528947A
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tial
semiconductor structure
composition
semiconductor
annealing
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JP2013512212A
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Japanese (ja)
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JP2013528947A5 (enExample
Inventor
ジェフ フー，ヨンジュン
メルドゥリム，ジョン，マーク
モー，シャンミン
アレン マクティア，エヴェレット
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マイクロン テクノロジー， インク．
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Publication of JP2013528947A publication Critical patent/JP2013528947A/ja
Publication of JP2013528947A5 publication Critical patent/JP2013528947A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2013512212A 2010-05-25 2011-05-25 半導体構造用オーミック接触 Pending JP2013528947A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/787,211 US20110291147A1 (en) 2010-05-25 2010-05-25 Ohmic contacts for semiconductor structures
US12/787,211 2010-05-25
PCT/US2011/037947 WO2011150089A2 (en) 2010-05-25 2011-05-25 Ohmic contacts for semiconductor structures

Publications (2)

Publication Number Publication Date
JP2013528947A true JP2013528947A (ja) 2013-07-11
JP2013528947A5 JP2013528947A5 (enExample) 2014-07-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013512212A Pending JP2013528947A (ja) 2010-05-25 2011-05-25 半導体構造用オーミック接触

Country Status (7)

Country Link
US (6) US20110291147A1 (enExample)
JP (1) JP2013528947A (enExample)
KR (1) KR20130071440A (enExample)
CN (1) CN102947956B (enExample)
SG (1) SG185718A1 (enExample)
TW (1) TWI550907B (enExample)
WO (1) WO2011150089A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015109438A (ja) * 2013-12-05 2015-06-11 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ 半導体デバイスにおけるｃｍｏｓ適合コンタクト層の製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110291147A1 (en) * 2010-05-25 2011-12-01 Yongjun Jeff Hu Ohmic contacts for semiconductor structures
JP5236787B2 (ja) * 2011-09-27 2013-07-17 シャープ株式会社 窒化物半導体装置およびその製造方法
CN106129216A (zh) * 2012-11-16 2016-11-16 大连美明外延片科技有限公司 一种四元AlGaInP发光二极管芯片及其制造方法
US9419181B2 (en) * 2013-05-13 2016-08-16 Infineon Technologies Dresden Gmbh Electrode, an electronic device, and a method for manufacturing an optoelectronic device
US9425050B2 (en) 2013-08-16 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for providing an electron blocking layer with doping control
JP6444718B2 (ja) * 2014-12-15 2018-12-26 株式会社東芝 半導体装置
CN104979215B (zh) * 2015-06-23 2018-01-02 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及其制备方法
CN105914270B (zh) * 2016-06-28 2018-09-18 聚灿光电科技股份有限公司 硅基氮化镓led外延结构的制造方法
US10032880B2 (en) 2016-10-10 2018-07-24 Semiconductor Components Industries, Llc Method for forming ohmic contacts
TWI622188B (zh) * 2016-12-08 2018-04-21 錼創科技股份有限公司 發光二極體晶片
US10290719B1 (en) 2017-12-27 2019-05-14 International Business Machines Corporation Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to metal electrode
CN115458649B (zh) * 2022-10-21 2025-05-02 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

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JPH05136138A (ja) * 1991-11-08 1993-06-01 Sony Corp 配線の形成方法
JPH1074707A (ja) * 1996-02-02 1998-03-17 Applied Materials Inc アルミニウム接触用チタニウム・アルミナイド湿潤層
JPH1084135A (ja) * 1997-10-09 1998-03-31 Nichia Chem Ind Ltd ｎ型窒化ガリウム系化合物半導体の電極及びその形成方法
JPH10125676A (ja) * 1996-10-15 1998-05-15 Fujitsu Ltd アルミニウム配線の作製方法
JP2000040671A (ja) * 1998-06-30 2000-02-08 Hyundai Electronics Ind Co Ltd チタニウムアルミニウムナイトライド反射防止膜を利用した半導体素子の金属配線の形成方法
JP2005327699A (ja) * 2004-04-15 2005-11-24 Seiko Epson Corp 金属薄膜およびその製造方法、誘電体キャパシタおよびその製造方法ならびに半導体装置
JP2006059933A (ja) * 2004-08-18 2006-03-02 Mitsubishi Cable Ind Ltd ｎ型窒化物半導体用のオーミック電極およびその製造方法

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JPS5136138A (ja) 1974-09-21 1976-03-26 Ricoh Kk Denshishashinkankozairyo
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JP2783349B2 (ja) * 1993-07-28 1998-08-06 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
EP0952617B1 (en) * 1993-04-28 2004-07-28 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
JPH09232632A (ja) * 1995-12-22 1997-09-05 Toshiba Corp 半導体発光素子及びその製造方法
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
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US5763010A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3974284B2 (ja) * 1999-03-18 2007-09-12 株式会社東芝 半導体装置の製造方法
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
JP4030534B2 (ja) * 2003-07-25 2008-01-09 昭和電工株式会社 化合物半導体発光素子およびその製造方法
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CN101303978A (zh) * 2008-07-04 2008-11-12 西安电子科技大学 适用于氮化镓器件n型欧姆接触的制作方法
CN101369599B (zh) * 2008-07-11 2011-02-16 北京大学 氮化镓基器件的欧姆接触及其制备方法
US20110291147A1 (en) 2010-05-25 2011-12-01 Yongjun Jeff Hu Ohmic contacts for semiconductor structures

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136138A (ja) * 1991-11-08 1993-06-01 Sony Corp 配線の形成方法
JPH1074707A (ja) * 1996-02-02 1998-03-17 Applied Materials Inc アルミニウム接触用チタニウム・アルミナイド湿潤層
JPH10125676A (ja) * 1996-10-15 1998-05-15 Fujitsu Ltd アルミニウム配線の作製方法
JPH1084135A (ja) * 1997-10-09 1998-03-31 Nichia Chem Ind Ltd ｎ型窒化ガリウム系化合物半導体の電極及びその形成方法
JP2000040671A (ja) * 1998-06-30 2000-02-08 Hyundai Electronics Ind Co Ltd チタニウムアルミニウムナイトライド反射防止膜を利用した半導体素子の金属配線の形成方法
JP2005327699A (ja) * 2004-04-15 2005-11-24 Seiko Epson Corp 金属薄膜およびその製造方法、誘電体キャパシタおよびその製造方法ならびに半導体装置
JP2006059933A (ja) * 2004-08-18 2006-03-02 Mitsubishi Cable Ind Ltd ｎ型窒化物半導体用のオーミック電極およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015109438A (ja) * 2013-12-05 2015-06-11 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ 半導体デバイスにおけるｃｍｏｓ適合コンタクト層の製造方法

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US9608185B2 (en) 2017-03-28
TWI550907B (zh) 2016-09-21
SG185718A1 (en) 2012-12-28
US20110291147A1 (en) 2011-12-01
WO2011150089A3 (en) 2012-03-15
US20200035891A1 (en) 2020-01-30
CN102947956A (zh) 2013-02-27
US10446727B2 (en) 2019-10-15
US20210257526A1 (en) 2021-08-19
US20140234996A1 (en) 2014-08-21
US20170117449A1 (en) 2017-04-27
US10998481B2 (en) 2021-05-04
CN102947956B (zh) 2016-12-28
WO2011150089A2 (en) 2011-12-01
TW201208123A (en) 2012-02-16
KR20130071440A (ko) 2013-06-28
US20250015245A1 (en) 2025-01-09

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