TWI550640B - 以含有導電微球之各向異性導電膜連接的半導體元件 - Google Patents

以含有導電微球之各向異性導電膜連接的半導體元件 Download PDF

Info

Publication number
TWI550640B
TWI550640B TW101148380A TW101148380A TWI550640B TW I550640 B TWI550640 B TW I550640B TW 101148380 A TW101148380 A TW 101148380A TW 101148380 A TW101148380 A TW 101148380A TW I550640 B TWI550640 B TW I550640B
Authority
TW
Taiwan
Prior art keywords
conductive particles
conductive
particles
anisotropic
conductive film
Prior art date
Application number
TW101148380A
Other languages
English (en)
Other versions
TW201333974A (zh
Inventor
柳亞朗
金南柱
朴憬修
朴永祐
徐準模
武市元秀
魚東善
崔賢民
Original Assignee
第一毛織股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 第一毛織股份有限公司 filed Critical 第一毛織股份有限公司
Publication of TW201333974A publication Critical patent/TW201333974A/zh
Application granted granted Critical
Publication of TWI550640B publication Critical patent/TWI550640B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29398—Base material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29463—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29464—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20106—Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Non-Insulated Conductors (AREA)
  • Conductive Materials (AREA)

Description

以含有導電微球之各向異性導電膜連接的半導體元件 發明領域
本發明有關一種以含有導電微球之各向異性導電膜連接的半導體元件。
發明背景
近年來，各向異性導電黏著劑已廣泛地用於連接諸如半導體元件之電子組件至電路板。各向異性導電黏著劑非常適合在電路連接各種諸如液晶顯示器(LCD)/有機發光元件(OLED)以及半導體元件之顯示器時，用作為電路終端之連接材料。
導電微球以前係製成碳纖維、鍚焊球等之形式，現在係製成鎳或銀球之形式，或用鎳、金或鈀塗覆球狀樹脂粒子或用絕緣材料處理球狀樹脂粒子之形式。
用於驅動IC以及玻璃板間之電氣連接之各向異性導電膜，稱作COG(晶片於玻璃上)ACF。在高溫與高壓之條件下，COG ACF黏合在驅動IC與玻璃板之間，如此驅動IC之金凸塊可透過變形的導電粒子，電氣連接至玻璃板上之終端。在LCD方面，其中面板終端之最上層係由銦錫 氧化物(ITO)構成，在適當範圍內具大變形率之導電粒子，有利於提供廣的接觸面積。在OLED方面，其中面板終端之最上層係由金屬構成，具高硬度之導電粒子，有利於穿透金屬上之氧化層。即，用於LCD之COG ACF之導電粒子具相對低硬度係有利的，而用於OLED之COG ACF導電粒子具相對高硬度係有利的。
同時，在鑑定各向異性導電膜是否成功的連接之操作方面，係觀察導電粒子之變形。然而，當使用硬導電粒子時，導電粒子實質上沒有變形，因此難以鑑定各向異性導電膜之連接。特別是，當在粒子之表面形成大量的突出物時，粒子之表面上發生漫反射，使得粒子之觀察更困難，因此減低可視度。
此外，具有高硬度之導電微粒在壓縮時容易產生低變形率，以及在面板之端終以及驅動IC之凸塊間壓縮時產生壓縮力。在此情況下，該壓縮力可能會轉移至面板以及驅動IC，引起物理性傷害以及連接失敗。
據此，為了穩定地達到電極間接觸面積之最大值，同時確保其間良好的連接，需要一種在一開始之壓縮階段展現硬度，而在壓縮過程中適當地變形之粒子。
發明概要
在LCD方面，其中面板終端之最上層係由銦錫氧化物(ITO)構成，在適當範圍內具大變形率之導電粒子，有利於提供廣的接觸面積，而在OLED方面，其中面板終端之 最上層係由金屬構成，具高硬度以及表面上大量突出物之導電粒子，有利於穿透金屬上之氧化層。
然而，如上所述，使用具高硬度以及在其表面上形成大量突出物之導電粒子，會導致低可視度，從而使各向異性導電膜之連接的鑑定變得困難。
為了解決此一問題，本發明開發出一種以各向異性導電膜連接之半導體元件，其包括具有高硬度之第一導電粒子以及具有低硬度之第二導電粒子，如此該第一導電粒子提供低連接電阻，而該第二導電粒子容許連接結果之鑑定以及適合的黏合壓力之測量，藉此提供提高的連接性能以及有效可視度。
本發明之一態樣，係用於解決由於具有相對高硬度和/或在其表面上形成大量突出物之導電粒子變形不足，所引起之膜連接鑑定方面之低可視度以及困難度。
本發明之另一態樣，係提供一種以包括導電微球之各向異性導電膜連接之半導體元件，其具有足夠的硬度穿透金屬氧化物層，提供良好的連接性，同時展現壓縮變形率，如此不會引起終端或凸塊之物理傷害，藉此該導電微球在壓縮時，提供連接基材間較大的接觸面積，從而提供極佳的導電性。
本發明之另外的態樣，提供一種以包括導電微球之各向異性導電膜連接之半導體元件，其展現極佳的電氣連接性能，以及提供一種包括該導電微球之各向異性導電膜。
本發明之一態樣中，提供一種以各向異性導電膜 連接之半導體元件。在此，該各向異性導電膜包括一包括第一導電粒子之第一導電層，以及該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心，且具有20%K值從7,000 N/mm2至12,000 N/mm2。
本發明之另一態樣中，提供一種以各向異性導電膜連接之半導體元件。在此，該各向異性導電膜包括一包括第一導電粒子以及第二導電粒子之第一導電層，其中該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心，且具有20%K值從7,000N/mm2至12,000N/mm2，以及該第二導電粒子具有與該第一導電粒子不同之20%K值，範圍從3,000N/mm2至7,000N/mm2。該第一導電粒子以及該第二導電粒子之20%K值之差小於5,000N/mm2。
在本發明之另外的態樣中，提供一種以各向異性導電膜連接之半導體元件。在此，該各向異性導電膜包括一包括第一導電粒子之第一導電層，以及一形成在該第一導電層上且包括第二導電粒子之第二導電層，其中該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心、具有20%K值從7,000N/mm2至12,000N/mm2以及具有比該第二導電粒子高之硬度。
在本發明之又另一態樣中，提供一種以各向異性導電膜連接之半導體元件。在此，該各向異性導電膜包括一包括第一導電粒子之第一導電層，以及一形成在該第一導電層上且包括第二導電粒子之第二導電層，其中該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心、具 有20%K值從7,000N/mm2至12,000N/mm2以及具有比該第二導電粒子高之表面粗糙度。
在本發明之又另一態樣中，一種半導體元件包括一配線基材，其具有金屬以及金屬氧化物層置於其最外層上；一各向異性導電膜，其貼至該配線基材之晶片安裝表面；以及一半導體晶片，其安裝在該各向異性導電膜上，其中，該各向異性導電膜直接毗連該金屬以及金屬氧化物層，以及包括一包括第一導電粒子之第一導電層。在此，該第一導電粒子具有20%K值從7,000N/mm2至12,000N/mm2，以及在220℃與110Mpa之條件下熱壓縮該各向異性導電膜5秒時，壓縮應變從5%至40%。
圖1顯示按導電粒子之表面上形成之突出物之密度解釋可視度之照片，其中右側照片係左側照片之放大照片，顯示出第一導電粒子具有高硬度，提供低變形率，而第二導電粒子具有低硬度，提供良好可視度；圖2顯示實驗範例2之評估結果；圖3顯示解釋使用奈米壓痕機測量導電粒子之硬度之照片；圖4係如本發明之一具體例之具有高表面粗糙度之第一導電粒子之顯微照片；圖5係如本發明之一具體例之具有低表面粗糙度之第二導電粒子之顯微照片；圖6係顯示一個展現良好黏合後可視度之導電粒子之 例子(範例4)的顯微照片；以及圖7係顯示一個展現差的黏合後可視度之導電粒子之例子(比較例8)之顯微照片。
較佳實施例之詳細說明
現在將詳細說明本發明之具體例。對熟悉此技藝人士而言顯而易見之詳細說明將予以省略。
在一具體例中，本發明提供一種以各向異性導電膜連接之半導體元件，其中該各向異性導電膜包括一包括第一導電粒子之第一導電層，以及該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心，且具有20%K值範圍從7,000N/mm2至12,000N/mm2。
在本發明中，導電粒子之硬度將以K值表示，其之測量可使用奈米壓痕機，獲得單一導電粒子變形時之負載量，然後依照方程式1，根據負載量計算(見圖3)：K值(N/mm2)=(3/21/2)．F．S-3/2．R-1/2---(1)， 其中F係導電粒子壓縮變形時之負載量N；S是其壓縮變形時導電粒子之壓縮移位；以及R是導電粒子之半徑(mm)。
在此使用之術語“20%K值”意指當S/2R=0.2時之K值。
在本發明中，該第一導電粒子較佳地具有20%K值範圍從7,000N/mm2至12,000N/mm2，更佳地從8,000N/mm2至11,000N/mm2。在此20%K值範圍內，其可能獲得具有足夠硬度，以便穿透金屬氧化物層供用於連接之 導電粒子，以及獲得展現依需要稍微變形之高硬度導電粒子。該第一導電粒子在220℃與110MPa之條件下熱壓縮5秒時，可具有壓縮應變為5%至40%。
在本發明中，該第一導電粒子可包括任何容許導電粒子具有20%K值為7,000N/mm2至12,000N/mm2之典型的核心。較佳地，該第一導電粒子包括含有二氧化矽(SiO2)或二氧化矽複合物之核心。
在一些具體例中，該第一導電粒子之核心可由二氧化矽構成。
在此使用於該第一導電粒子之核心之二氧化矽複合物，意指聚合物樹脂以及二氧化矽(SiO2)之複合物。
在'聚合物樹脂與二氧化矽之複合物'中，'聚合物樹脂'可包括一具有至少一種擇自於由可交聯聚合之單體以及單官能單體所構成之群組之單體之聚合物，且存在之數量，以該複合物之總重量為基準，可為10重量%至85重量%，以及該'二氧化矽'存在之數量，以該複合物之總重量為基準，可為15重量%至90重量%。該聚合物樹脂可為具有高程度的交聯之高度交聯的有機聚合物粒子。
在本發明中，該可交聯聚合的單體可包括至少一種擇自於由下列所構成之群組：乙烯基苯單體，諸如二乙烯基苯；烯丙基化合物，諸如二乙烯基-1,4-丁二醇醚、二乙烯基碸、己二烯酞酸酯、二烯丙基丙烯醯胺、三烯丙基(異)氰酸酯以及偏苯三酸三烯丙酯；丙烯酸酯單體，諸如乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、季戊四醇 四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三甲醇基丙烷三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯以及甘油三(甲基)丙烯酸酯等等，但不限於此。
在本發明中，該單官能單體可包括至少一種擇自於由下列所構成之群組：苯乙烯單體，諸如苯乙烯、甲基苯乙烯、間氯甲基苯乙烯以及乙基苯乙烯；(甲基)丙烯酸酯單體，諸如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸2-乙己酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸月桂酯以及(甲基)丙烯酸十八烷基酯、氯乙烯、醋酸乙烯酯、乙烯醚、丙酸乙烯酯、丁酸乙烯酯等等，但不限於此。
該二氧化矽複合物係將二氧化矽加至聚合物樹脂中獲得，藉此該聚合物樹脂在強度、剛性以及耐磨性方面，可具有顯著地改善的物理特性，因此比其它典型的聚合物樹脂硬很多。因此，該二氧化矽複合物有利於使用於OLED中，需要穿透金屬氧化物層供用於連接之導電粒子。
該第一導電粒子可製成單一類型之導電粒子，或製成二或多種類型之導電粒子之混合物。
該第一導電粒子可具有平均粒徑範圍從0.1μm至200μm。該第一導電粒子可進一步包括一形成在該含有二氧化矽或二氧化矽複合物之核心上之導電外殼。該第一導電粒子中之每一個，可包括形成在其表面上之突出物。該 第一導電粒子之每單位表面積(1μm2)中，可包括10至40個突出物，更佳地每單位表面積中15至30個突出物。在此範圍內，該第一導電粒子可展現極佳的連接性能。
於另一具體例中，本發明提供一種以各向異性導電膜連接之半導體元件，其中該各向異性導電膜包括一包括第一導電粒子以及第二導電粒子之第一導電層。在此，該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心，以及該第二導電粒子具有20%K值範圍從3,000N/mm2至7,000N/mm2。此外，該第一導電粒子以及該第二導電粒子間之20%K值之差小於5,000N/mm2。
在此具體例中，該第二導電粒子較佳地具有20%K值範圍從3,000N/mm2至7,000N/mm2，更佳地4,500N/mm2至6,500N/mm2。在此範圍內，該導電粒子可展現適合的變形率。
在此具體例中，包含於該第一導電層中之第一導電粒子，具有高硬度，因此可在壓縮時粒子沒有受到傷害或變形之情況下，作為電路終端間之電流的流道，而包含於該第二導電層中之第二導電粒子，在壓縮時很易容碎裂或變形，因此容許該各向異性膜壓縮之程度得以確認。
該第二導電粒子存在之數量，以總導電粒子100重量份為基準，為1至30重量份。
該第一導電粒子以及該第二導電粒子間20%K值之差可大於0至小於5,000N/mm2。當其間之20%K值的差大於或等於5,000N/mm2時，連接電阻由於該第一與第二導電 粒子間過度的差異而增加，因此導致連接性能降低。另一方面，假如該第一以及第二導電粒子具有相同的硬度，則採用不同類型之導電粒子(諸如第一以及第二導電粒子)係沒有用的。
該第二導電粒子可由此技藝中已知之任何典型的導電粒子構成，只要粒子具有20%K值範圍從3,000N/mm2至7,000N/mm2，或展現相似程度的硬度即可。
該第二導電粒子之例子可包括金屬粒子，包括Au、Ag、Ni、Cu、焊錫等等；碳粒子；金屬塗覆的樹脂粒子，其係用諸如Au、Ag、Ni等等之金屬，塗覆諸如聚乙烯、聚丙烯、聚酯、聚苯乙烯以及聚乙烯醇樹脂粒子之樹脂粒子以及其改質的樹脂粒子而製得；以及絕緣處理的導電粒子，其係用絕緣粒子塗覆導電粒子而製得，但不限於此。
該第二導電粒子較佳地包括聚合物樹脂之核心，更佳地聚甲基丙烯酸甲酯或聚矽氧烷樹脂。
該第二導電粒子可製成單一類型之導電粒子，或製成二或多種類型之導電粒子之混合物。
在此具體例中，包含於該第一導電層中之第一導電粒子，具有高硬度，因此可在壓縮時粒子沒有受到傷害或變形之情況下，作為電路終端間之電流的流道，而包含在該第二導電層中之第二導電粒子，在壓縮時很易容碎裂或變形，因此容許該各向異性膜壓縮之程度得以確認。
此外，該第一導電粒子(見圖4)可具有比該第二導電粒子(見圖5)大的表面粗糙度。換句話說，當該第二導 電粒子之表面粗糙度小於該第一導電粒子之表面粗糙度時，其可能因防止光之漫反散而改善粒子之可視度。該第一以及第二導電粒子之表面粗糙度，可取決於各種因素，諸如其材料以及製造方法。例如，當在該第一導電粒子之表面上形成突出物時，該第一導電粒子可具有增加的表面粗糙度。在此，任何此技藝中已知之方法均可用於在導電粒子上形成突出物，此沒有限制。例如，無電電鍍，其之進行係將核-殼結構之微球，浸入含有金屬鹽溶液以及還原劑之無電電鍍溶液中。
該第一導電粒子之各突出物，較佳地從對應導電粒子之外表面突出高度為0.1μm或更多，較佳地0.2μm或更多。
該第一導電粒子之每單位表面積(1μm2)，可包括10至40個突出物，更佳地每單位表面積包括15至30個突出物。在此範圍內，該第一導電粒子可展現極佳的連接性能。
該第二導電粒子之表面上可具有突出物或不具有突出物。
該第二導電粒子之每單位表面積(1μm2)上，可包括0至10個突出物，更佳地每單位表面積包括0至5個突出物。在此突出物之範圍內，確認導電膜黏合時之適當的連接係可能的，從而提供極佳的可視度，以便確認適合的黏合壓力，同時透過突出物之操作，降低連接電阻。
在此使用有關粒子之術語“可視度”，意指物體的特性，容許觀察者用肉眼或顯微鏡看到該物體。此外，在 此使用有關該第二導電粒子之術語“可視度”，意指導電粒子的特性，容許觀察者觀察到導電粒子之變形，以便確認各向異性導電膜黏合時，是否獲得適當的連接。
因為該第二導電粒子具有相對低的硬度，所以該第二導電粒子可透過容易變形，幫助確認各向異性導電膜之適當的連接，即極佳的可視度。
明確而言，當使用顯微鏡等等，觀察具有在其表面上形成大量突出物之導電粒子時，導電粒子之表面顯示出暗暗的，因此使其難以觀察到導電粒子之變形。另一方面，當觀察在其表面上沒有形成突出物或形成少量突出物之導電粒子時，導電粒子之表面顯示出亮亮的，因此可幫助觀察其之變形(見圖1以及圖2)。
在另外的具體例中，本發明提供一種以各向異性導電膜連接之半導體元件，其中該各向異性導電膜包括一包括第一導電粒子之第一導電層，以及一形成在該第一導電層上且包括第二導電粒子之第二導電層。在此，該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心，以及具有20%K值範圍從7,000N/mm2至12,000N/mm2。在此，該第一導電粒子具有比該第二導電粒子大之硬度。
在此具體例中，該第一導電粒子與該第二導電粒子間20%K值之差可為5,000N/mm2或更大。該第二導電粒子在壓縮時容易破裂或變形，從而因容許各向異性導電膜之壓縮程度得以確認，而改善導電粒子的可視度。當其間20%K值之差大於或等於5,000N/mm2時，該各向異性導電膜 在壓縮時容易變形，從而幫助改善可視度。
在此具體例中，包含於該第一導電層中之第一導電粒子，具有高硬度，因此可在壓縮時該粒子沒有受到傷害或變形之情況下，作為電路終端間之電流的流道，而包含於該第二導電層中之第二導電粒子，在壓縮時很易容碎裂或變形，藉此容許該各向異性膜壓縮之程度得以確認。
當在該各向異性導電膜之單一層中包括該第一導電粒子以及該第二導電粒子二者時，該第二導電粒子會降低用於該各向異性導電膜之組成物的流動性以及黏著力，以及製程中之分散性。結果，由於組成物之流動性減少，所以需在預壓縮時增加溫度，以便獲得所欲的預壓縮性能。因此，就分散性、預壓縮溫度、黏度以及流動性而論，使該第一以及第二導電粒子，分別包含於該第一以及第二導電層中。
特別地，當第二導電粒子包含於該第二導電層中時，該第一導電粒子在該第一導電層中具有改善的分散程度。該各向異性導電膜之分散程度可由粒子密度獲得。如本發明之具體例之各向異性導電膜，可具有分散程度範圍從20,000至70,000，較佳地從30,000至60,000。分散程度可由膜塗佈後粒子之密度確認，而粒子密度係用下列方程式2，根據使用顯微鏡拍攝粒子之照片後，用KAMSCOPE計數粒子之數量計算得。
<方程式2>分散程度=(第二導電粒子之數量/第一導電粒子之數量)×100
在此具體例中，該第一導電粒子存在之數量，以用於該第一導電層之組成物的總量為基準，為1重量%至30重量%，而該第二導電粒子存在之數量，以用於該第二導電層之組成物的總量為基準，為1重量%至30重量%。
該第一導電粒子和/或第二導電粒子，可由用導電金屬塗覆核心化合物而製得。用於該第一導電粒子之核心化合物，可具有比用於該第二導電粒子之核心化合物大的硬度。至於用於第一導電粒子之核心化合物，可使用此技藝中所使用之任何典型的核心化合物，此沒有限制，只要該核心化合物可提供該導電粒子20%K值從7,000N/mm2至12,000N/mm2即可。較佳地，用於該第一導電粒子之核心化合物，包括二氧化矽(SiO2)或二氧化矽複合物。用於該第二導電粒子之核心化合物，可包括樹脂類，諸如環氧、三聚氰胺、胺基甲酸酯、苯代三聚氰胺、酚、聚烯烴、聚醚、聚酯、聚苯乙烯、NBR、SBR、BR、聚乙烯醇以及聚矽氧烷樹脂，或其改質的樹脂類。任擇地，該第二導電粒子可由用諸如金、銀、鎳、銅、鈀、焊錫等之金屬，塗覆此等樹脂粒子而製得。該第二導電粒子係使用至少一種擇自於此等之核心化合物而製得。
在又另一具體例中，本發明提供一種以各向異性導電膜連接之半導體元件，其中該各向異性導電膜包括一包括第一導電粒子之導電層，以及一形成在該第一導電層上且包括第二導電粒子之第二導電層。該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心，且具有20%K值 範圍從7,000N/mm2至12,000N/mm2。該第一導電粒子具有比該第二導電粒子大的表面粗糙度。
在此具體例中，該第一導電粒子(見圖4)之表面粗糙度，可大於該第二導電粒子(見圖5)之表面粗糙度。換句話說，當該第二導電粒子之表面粗糙度小於該第一導電粒子之表面粗糙度時，其可能因為防止光之漫反射而改善粒子之可視度。
在此具體例中，該第一以及第二導電粒子之表面粗糙度可透過SEM分析確認。
該第一以及第二導電粒子之表面粗糙度，可取決於各種因素，諸如其材料以及製造方法。例如，當在該第一導電粒子之表面上形成突出物時，該第一導電粒子可具有增加的表面粗糙度。在此，任何此技藝中已知之方法均可用於在導電粒子上形成突出物，此沒有限制。例如，無電電鍍，其之進行係將核-殼結構之微球，浸入含有金屬鹽溶液以及還原劑之無電電鍍溶液中。該第一導電粒子之各突出物，較佳地從對應導電粒子之外表面突出高度為0.1μm或更多，較佳地0.2μm或更多。
在此具體例中，雖然具有不同硬度之該第一以及第二導電粒子，可具有取決於電路節距之平均粒徑，但該第一以及第二導電粒子典型地具有平均粒徑為2μm至30μm，較佳地2μm至6μm。該第一導電粒子可具有與該第二導電粒子相同或不同的粒徑。當電路具有較細的節距時，需要該第一導電粒子具有比該第二導電粒子小的平均 粒徑。
在此具體例中，該第一導電粒子存在之數量，以用於該第一導電層之組成物之總量為基準，為1重量%至30重量%，以及該第二導電粒子存在之數量，以用於該第二導電層之組成物之總量為基準，為1重量%至30重量%。
該第一導電粒子之每單位表面積(1μm2)中，可包括10至40個突出物，更佳地每單位表面積中15至30個突出物。在此範圍內，該第一導電粒子可展現極佳的連接性能。
該第二導電粒子之其表面上可具有突出物或不具有突出物。
該第二導電粒子之每單位表面積(1μm2)上，可包括0至10個突出物，更佳地每單位表面積包括0至5個突出物。在此突出物之範圍內，確認導電膜黏合時之適當的連接係可能的，從而提供極佳的可視度，以便確認適合的黏合壓力，同時透過突出物之操作，降低連接電阻。
在又另一具體例中，本發明提供一種半導體元件，其包含一配線基材，其具有金屬以及金屬氧化物層置於其之最外層；一各向異性導電膜，其貼至該配線基材之晶片安裝表面；以及一半導體晶片，其安裝在該各向異性導電膜上，其中該各向異性導電膜直接毗連該金屬以及金屬氧化物層，以及包括一包括第一導電粒子之第一導電層。在此，該第一導電粒子具有20%K值從7,000N/mm2至12,000N/mm2，以及在220℃，110Mpa負載下，熱壓縮5秒時，壓縮應變範圍從5%至40%。
概略而言，為了達到電極間接觸面積之穩定的最大值，同時提供電極間適當的連接，需要在一開始之壓縮階段可展現硬度，而在壓縮過程中適當地變形之導電微粒。
依照此具體例，該導電微球較佳地具有20%K值從7,000N/mm2至12,000N/mm2，更佳地從8,000N/mm2至11,000N/mm2。在此20%K值之範圍內，該導電微球可透過在板上終端之最上層的金屬，提供適當的連接。假如導電微球之20%K值小於7,000N/mm2，則該導電微球並不硬，因此無法透過該終端之金屬氧化物層提供適當的連接，從而導致連接失敗。假如導電微球之20%K值超過12,000N/mm2，則置於電極間之導電微球不易變形，如此該電極界面與該導電微球間之接觸面積沒有充分地放大，從而使其難以減少連接電阻。
假如壓縮應變小於5%，則壓縮力可能直接轉移至板以及驅動IC之每一個，引起其之物理傷害，從而導致連接失敗。假如壓縮應變超過40%，則導電微球在因外部的熱而導致黏著劑之收縮/擴大時，難以充分地回復，如此可能會在導電微球與電極表面之間產生不欲之間隔。
壓縮應變可用下列方程式計算：壓縮應變=(R1-R2)/(R1+R2)×100，其中，當粒子在各向異性導電膜於220℃，負載110MPa下壓縮5秒而變形時，R1以R2分別意指粒子之水平直徑以及垂直直徑。
在此具體例中，該第一導電粒子可包括含有二氧化矽或二氧化矽複合物之核心。當於聚合物樹脂中加入二氧化矽時，該聚合物樹脂具顯著提高的強度、剛性以及耐磨性。另外，與以二氧化矽珠作為核心相比，該包括聚合物樹脂之第一導電粒子，具有某種程度之彈性，因此在連接空間中可有利地展現撓性壓縮以及變形。
在此具體例中，SiO2存在之數量，以該聚合物樹脂以及SiO2之複合物的總量為基準，為15重量%至90重量%。在此範圍內，該導電微球可具有所欲的硬度以及連接可靠度。
在此具體例中，該第一導電層可另外包括第二導電粒子，其具有比該第一導電粒子低的20%K值。
另外，在此具體例中，該各向異性導電膜可另外包括第二導電層，其形成在該第一導電層上，且包括具有20%K值比該第一導電粒子低的第二導電粒子。該第一導電粒子可具有形成在其表面上之突出物。
如本發明之用於各向異性導電膜之組成物，可另外包括絕緣黏著組份以及固化劑。在該絕緣黏著組份方面，可使用任何用於各向異性導電膜之組成物之典型的組份，此沒有限制。例如，該絕緣黏著組份可包括至少一種擇自於由下列所構成之群組：烯烴樹脂，諸如聚乙烯、聚丙烯等等；丁二烯樹脂，諸如丙烯腈丁二烯共聚物、羧基終端的丙烯腈丁二烯共聚物、聚醯亞胺樹脂、聚醯胺樹脂、聚酯樹脂、聚乙烯丁縮醛樹脂、乙烯-醋酸乙酯共聚物、苯 乙烯-丁烯-苯乙烯(SBS)、苯乙烯-乙烯-丁烯-苯乙烯(SEBS)、丙烯腈丁二烯橡膠(NBR)、環氧樹脂、胺基甲酸酯樹脂、(甲基)丙烯酸樹脂、苯氧基樹脂等等，但不限於此。此等可單獨使用或以其組合之形式使用。
在本發明中，該固化劑會促進固化反應，藉此確保連接層間之黏著性以及連接可靠度。該固化劑可包括擇自於單官能或多官能(甲基)丙烯酸酯寡聚物以及單體之自由基固化單元。較佳地，可使用二官能(甲基)丙烯酸酯單體或寡聚物作為固化劑。
該固化系統可包括至少一種擇自於環氧(甲基)丙烯酸酯樹脂者，其之分子內結構包括下列骨架：2-溴氫醌、間苯二酚、苯磷二酚；雙酚類，諸如雙酚A、雙酚F、雙酚AD以及雙酚S、4,4'-二羥基聯苯或雙(4-羥苯基)醚；(甲基)丙烯酸酯寡聚物，其包含烷基、芳基、甲醇基、烯丙基、環脂族、鹵素(四溴雙酚A)或硝基基團；以及含多環芳族環之環氧樹脂，但不限於此。
在本發明中，可有利地使用潛伏型固化劑，以及可包括環氧類熱固化劑，但不限於此。可使用此技藝中已知之任何典型的環氧類熱固化劑，此沒有限制。例如，該環氧類熱固化劑可包括至少一種擇自於下列之群組：咪唑、酸酣、胺、肼、陽離子固化劑以及其等之組合。
如本發明之各向異性導電膜之組成物，可另外包括疏水性奈米二氧化矽。該疏水性奈米二氧化矽使在製程條件下能夠平穩的調整流動性，以及提供各向異性導電膜 高強度的固化結構，防止各向異性導電膜在高溫下膨脹，藉此該各向異性導電膜可展現極佳的起始黏著性以及低連接電阻，同時維持高溫/高濕度以及熱衝擊條件下之連接以及黏著可靠度，從而確保極佳的長期耐久性。
該疏水性奈米二氧化矽粒子係有機二氧化矽化合物經表面處理製得的，具有粒徑5nm至20nm以及比表面積100m2/g至300m2/g。該二氧化矽粒子可包括至少一種擇自於下列者：Aerosil R-812、Aerosil R-972、Aerosil R-805、Aerosil R-202、Aerosil R-8200(Degussa GmbH)等等，但不限於此。
供用於奈米二氧化矽粒子之表面處理，以展現疏水特性之有機矽烷化合物，可包括至少一種擇自於由下列所構成之群組：乙烯基三氯矽烷、乙烯基三甲氧基矽烷、γ縮水甘油醚丙基三甲氧基矽烷、3-甲基丙烯醯氧丙基三甲氧基矽烷、二甲基二氯矽烷、辛基矽烷、六甲基二矽氮烷、八甲基氯四矽氧烷、聚二甲基矽氧烷、2-胺乙基-3-胺丙基甲基二甲氧基矽烷、3-脲丙基三乙氧基矽烷等等。
如本發明之各向異性導電膜之組成物可有利地用於OLED之COG ACF。
接著，將參照範例更詳細的說明本發明之組成以及操作。在此，應了解，下列範例僅供例示說明用，任何情況下不得解釋為本發明之限制。
範例 範例1 包括二種具有不同硬度以及表面突出物密度之導電粒子類型之各向異性導電膜之製備
使用下列組份製備用於各向異性導電膜之組成物：以各向異性導電膜之固體含量100重量份為基準，1)環氧化物：17重量份之BPA(雙酚A)環氧化物(Kukdo Chemical Co.,Ltd.)以及19重量份之含多環芳族環環氧樹脂(HP4032D，Dainippon Ink and Chemicals Inc.)；2)二氧化矽粒子：4重量份之奈米二氧化矽(R812，Degussa GmbH)；3)固化劑：35重量份之含有咪唑之核-殼類潛伏型固化劑(Asahi Kasei Co.,Ltd.)；4)第一導電粒子：29重量份之鎳塗覆的聚合物樹脂與二.氧化矽之複合物(20%K值：10,000N/mm2，在220℃，負載110MPa下熱壓縮5秒之壓縮應變：15%，突出物之表面密度：20/μm2)；以及5)第二導電粒子：6重量份之鎳塗覆的聚合物樹脂導電粒子(20%K值：6,000N/mm2，在220℃，負載110MPa下熱壓縮5秒之壓縮應變：25%；突出物之表面密度：4/μm2，Sekisui)。
使製得之液態組成物在室溫下(25℃)，以可防止導電性粒子粉碎之速度攪拌。將攪拌過後的混合物，薄薄地塗在已經過矽表面離型處理之聚乙烯對苯二甲酸酯(PET) 基底膜上，然後在70℃下用熱空氣吹5分鐘乾燥，產生30μm壓之薄膜。在該膜之製造方面，係使用鑄刀。
比較例1 僅包括第一導電粒子作為導電粒子之各向異性導電膜之製備
以與範例1相同之方法製備各向異性導電膜，但沒有使用該第二導電粒子，而使用35重量份之該第一導電粒子。
比較例2 僅包括第二導電粒子作為導電粒子之各向異性導電膜之製備
以與範例1相同之方法製備各向異性導電膜，但沒有使用該第一導電粒子，而使用35重量份之該第二導電粒子。
表1顯示範例1以及比較例1與2中製得之各向異性導電膜之組成(重量份)。
實驗範例1 起始以及可靠度後之連接電阻的測量
為測量範例1以及比較例1與2中製得之各向異性導電膜之連接電阻，將範例1以及比較例1與2中製得之各個各向異性導電膜，插在具有凸塊面積2000μm2以及2000□厚鈦電路之玻璃基板與1.7mm厚具有凸塊面積2000μm2之晶片中間，接著在220℃與90MPa之條件下壓縮以及加熱5秒，如此針對4種各向異性導電膜樣本，各製得5個試樣。
1)預壓縮條件：70℃，1秒，1.0MPa
2)主壓縮條件：220℃，5秒，90MPa
使用4點探針方法(對應於ASTM F43-64T)，測量5個試樣中每一個之起始連接電阻，然而計算平均起始連接電阻。
此外，將各5個試樣置於85℃以及85%RH下500個小時，進行高溫/高濕度可靠度之評估，以及依照ASTM D117，測量各5個試樣之可靠度後之連接電阻，取得其平均值。
表2顯示範例1以及比較例1與2中製得之各向異性導電膜之起始以及可靠度後之連接電阻的測量結果。
實驗範例2 膜黏合後導電粒子之可視度的評估
為評估範例1以及比較例1與2中製得之各向異性導電膜之黏合可視度，在200℃與4.0MPa之條件下，壓縮每一個各向異性導電膜4秒，評估是否可透過顯微鏡確認導電粒子之變形。
可視度之評估結果提供於圖2。
根據實驗範例1以及2，當增加展現高硬度之第一導電粒子之數量時，連接電阻減少，因此提供改善的連接性能。據此，含有最大量第一導電粒子之比較例1之各向異性導電膜，展現優於其它膜之連接性能。然而，因為比較例1之各向異性導電膜不含第二導電粒子，所以其沒有展現出可視度。
範例2 (1)聚合物樹脂以及二氧化矽之複合物之製備
在反應器中，置入去離子水以及月桂基硫酸鈉乳化劑(稱重)，在氮氣中，70℃下攪拌30分鐘，接著添加26g之苯乙烯(Junsei Co.,Ltd)作為聚合物樹脂、4g之二氧化矽以及1g之過硫酸鉀水溶液於該混合物中，藉此製得具有平均粒徑為2μm之聚合物樹脂以及二氧化矽之複合物。
(2)導電微球之製備
使製得之聚合物樹脂以及二氧化矽之複合物於鉻酸與硫酸溶液中蝕刻，浸在氯化鎳溶液中，透過還原在粒子之表面上形成細小的鎳核，接著無電解鎳，形成導電金屬層。之後，在導電金屬層上沈積具有20nm至100nm直徑之Ni微球，接著用Au、Pd以及Ni中之至少一種電鍍，如 此製得導電微球。
(3)雙層各向異性導電膜之製備
範例以及比較例之詳細組份如下。
1.黏合系統：雙酚A類環氧樹脂(YP-50，Kukdo Chemical Co.,Ltd.)
2.固化系統：含多環芳族環環氧樹脂(HP4032D，Dainippon Ink and Chemical Inc.)
3.疏水性奈米二氧化矽：奈米二氧化矽(R812，Degussa GmbH)
4.潛伏型固化劑：咪唑微囊類(HX3922HP，Asahi Kasei Co.,Ltd.)
5.導電微球1：範例2-(2)中製得之鎳塗覆聚合物樹脂與二氧化矽之複合物(20%K值：10,000N/mm2，在220℃，負載110MPa下熱壓縮5秒之壓縮應變：15%)
6.導電微球2：鎳塗覆聚合物樹脂導電粒子(20%K值：5,000N/mm2，在220℃，負載110MPa下熱壓縮5秒之壓縮應變：30%，Sekisui)
7.導電微球3：鎳塗覆聚合物樹脂導電粒子(20%K值：2,000N/mm2，在220℃，負載110MPa下熱壓縮5秒之壓縮應變：3%，NCI)
8.矽烷偶合劑：γ縮水甘油醚丙基三甲氧基矽烷
9.用於矽烷表面處理之溶液：使結合系統以及γ縮水甘油醚丙基三甲氧基矽烷，以2：1之混合比率，在溶劑中稀釋，製得濃度為10%之溶液。
10.核-殼橡膠：丁二烯橡膠(Gantz)
a.各向異性膜(ACF)之製備
將結合系統、固化系統、範例2-(2)中製得之導電微球、二氧化矽、潛伏型固化劑以及矽烷偶合劑，以表3中列出之數量，與50重量份之溶劑(PGMEA)混合，如此製得用於各向異性導電膜之組成物。在一基底膜上塗佈上該組成物至20μm厚，然後將0.1ml用於矽烷表面處理之溶液均勻噴灑於該膜之表面上。之後，在70℃下乾燥該組成物5分鐘，如此製得所欲的各向異性導電膜。
b.非導電性各向異性導電膜(NCF)之製備
將結合系統、固化系統、二氧化矽、潛伏型固化劑以及矽烷偶合劑，以表3中列出之數量，與50重量份之溶劑(PGMEA)混合，如此製得用於絕緣黏著層之組成物。之後，在基底膜上塗佈該組成物至10μm厚。之後，在70℃下乾燥該組成物5分鐘，藉此製備非導電性各向異性導電膜。
c.雙層各向異性導電膜之製備
透過層壓方法，在40℃，負載1MPa下，將製得之導電性各向異性導電膜以及非導電性各向異性導電膜彼此黏合在一起，如此製得範例2之雙層各向異性導電膜，其中該各向異性導電膜係疊在非導電膜上。
比較例3以及4
以與範例2相同之方法製備雙層各向異性導電膜，但組成如表3所示(單位：固體含量之重量%)。
依照下列方法，評估範例2以及範例3至4製得之薄膜，ACF之連接電阻以及可靠度測試後之連接電阻。結果示於表4中。
<物理特性之評估>
1.起始連接電阻：使用具有凸塊面積為1430μm2之驅動IC晶片以及具有2000□厚電路之玻璃基板作為被黏物。在此，終端之最上層由鈦構成。將各製得的薄膜置於被黏物之間，然後在220℃與110MPa之條件下熱壓縮5秒，製得一樣本。使用HIOKI HI-檢測器(HIOKI Co.,Ltd.)，施以1mA之電流，測量樣本之電阻。
2.可靠度測試後之連接電阻：將製得之樣本留在高溫高濕條件下(85℃/85%RH)500個小時，使用HIOKI HI-檢測器(HIOKI Co.,Ltd.)，施以1mA電流，測量樣本之電阻。
從表4可見，如本發明之導電微球以及包括該導電微球之導電膜，在起始連接電阻以及可靠度後之連接電阻方面，展現良好的電氣特性。
範例3：雙層各向異性導電膜之製備 (1)第二導電層薄膜之製備
混合30重量份之結合劑(YP50，Kukdo Chemical Co.,Ltd.)、32重量份之環氧樹脂(RKB4110，Resinous Product Company)、1重量份之偶合劑(KBM403，Shinetsu Co.,Ltd.)、27重量份之潛伏型固化劑(HX3941，Asahi Kasei Co.,Ltd.)、5重量份之第二導電粒子(AUEL003，Sekisui，20%K值：1900N/mm2)以及100重量份之溶劑PGMEA。之後，將製得之混合物塗佈在離型膜上，在70℃烤箱中使溶劑揮發，藉此製得10μm厚之非導電膜。
(2)第一導電層薄膜之製備
混合23重量份之結合劑(YP50，Kukdo Chemical Co.,Ltd.)、26重量份之液態環氧樹脂(RKB4110，Resinous Product Company)、1重量份之偶合劑(KBM403，ShinEtsu Co.,Ltd.)、20重量份之潛伏型固化劑(HX3941，Asahi Kasei Co.,Ltd.)、30重量份之第一導電粒子(PNR and Nippon Chemical Industry，20%K值：7000N/mm2)以及100重量份之 溶劑PGMEA。之後，將製得之混合物塗佈在離型膜上，在70℃烤箱中使溶劑揮發，藉此製得10μm厚之各向異性導電膜。
(3)雙層各向異性導電膜之製備
將製得之第一導電層薄膜與第二導電層薄膜，透過層壓方法，在40℃以及0.2Mpa下彼此黏合在一起，藉此製得範例3中之雙層各向異性導電膜，其中該各向異性導電膜疊在該非導電膜上。
範例4：雙層各向異性導電膜之製備
以與範例3相同之方法製備雙層各向異性導電膜，但添加數量為10重量份之第二導電粒子。
範例5：雙層各向異性導電膜之製備
以與範例3相同之方法製備雙層各向異性導電膜，但添加數量為15重量份之第二導電粒子。
比較例5至8
以與範例3相同之方法製備雙層各向異性導電膜，但添加表3中列出之組成(單位：固體含量之重量%)。
A：黏合劑-苯氧樹脂(YP50，Kukdo Chemical Co.,Ltd.)
B：環氧樹脂(RKB，Resinous Product Company)
C：矽烷偶合劑(KBM403，Shinetsu Co.,Ltd.)
D：潛伏型固化劑-咪唑固化劑(HX3941，Asahi Kasei Co.,Ltd.)
E：第一導電粒子(PNR，Japan Chemical Industry Inc.)-(20%K值：7000N/mm2)
F：第二導電粒子(AUEL003，Sekisui)-(20%K值：1900N/mm2)
以下列方法，評估範例3至5以及比較例5至8中製得之組成物以及薄膜之ACF黏度、ACF塗佈狀態、第一導電粒子/第二導電粒子之分佈程度、預壓縮溫度、粒子黏合後之電阻以及黏合後之可視度。結果示於表6。
<物理特性之評估>
1. ACF黏度：使用Brookfield黏度計6號轉子，在25℃以及60rpm下，測量乾燥前，ACF之組成物的黏度。
2. ACF塗佈狀態：用肉眼目視檢查塗佈時，ACF上之條紋、結、污點、凹痕、刮痕等等。塗佈後，各向異性導電膜維持在厚度1微米或更小之變化，以及面積為主的直徑為1 mm或更小。
3. ACF內第一導電粒子/第二導電粒子之分散程度：在 雙層各向異性導電膜上塗佈後，在顯微鏡上直接計數第一導電粒子之數量以及第二導電粒子之數量，用下列方程式計算分散程度。
分散程度=(第二導電粒子之數量/第一導電粒子之數量)×100
4.預壓縮溫度：透過肉眼目視檢查確認，壓縮AFC後，當基底膜剝除時，AFC是否有適當地貼在板上，同時測量ACF之溫度。表2顯示ACF適當地貼在板上時之預壓縮溫度。當ACF由於低黏著性而與板脫離時，需提高預壓縮溫度直到ACF仍維持與板貼合之狀態。
5.黏合後之電阻：將範例以比較例中製得之每一個各向異性導電膜置於25℃下1個小時，接著使用50μm節距OLB(外引線接合)TEG(測試元件組)以及ITO玻璃基材、COF(軟膜覆晶接合)以及TCP(捲帶式晶片載體封裝)評估黏合後之電阻。在50℃與1MPa之條件下，預壓縮OLB電路之終端上之各向異性導電膜1秒後，移除離型膜。之後，使該各向異性導電膜對著COF電路終端，接受主要壓縮之處理，在180℃與3MPa下5秒。各樣本製得7個試樣，之後利用4點探針方法(依照ASTM F43-64T)，測量連接電阻。
6.粒子黏合後之可視度：黏合後，使用具輸入開口/輸出端子之光學顯微鏡(Olympus Co.,Ltd.)，確認凸塊上粒子的破碎。當粒子係不反光時，測定為粒子展現不良的度，當粒子為透明時，測定為粒子展現良好可視度。良好可視度之例子示於圖6(範例4)中，而不良可視度之例子示於圖7(比較例8)中。
從表6中，可見到如本發明之各向異性導電膜在可視度、黏度、分散性以及流動性上具有改善的物理特性，且亦容許在低溫下預壓縮。再者，如本發明之各向異性導電膜具低預壓縮溫度，因此提供極佳的黏著性以及電氣特性，包括連接電阻以及絕緣電阻。
雖然在此揭示一些具體例，但應了解，此等具體例僅供例示用，且可在不逸離本發明之技術思想之範圍之情況下，製得各種修飾、變化以及改變。因此，本發明之範疇應僅受所附之申請專利範圍以及其相等物之限制。

Claims (18)

  1. 一種半導體元件，包含用於連接該半導體元件之一各向異性導電膜，該各向異性導體膜包括：具有第一導電粒子之一第一導電層，該第一導電粒子包括含有二氧化矽或二氧化矽複合物之核心，且具有範圍從7,000N/mm2至12,000N/mm2之20%K值，及該各向異性導電膜進一步包括具有與該等第一導電粒子之該20%K值不同之第二20%K值的第二導電粒子，該第二20%K值之範圍為從3,000N/mm2至7,000N/mm2，及該等第一導電粒子之該20%K值與該等第二導電粒子之該第二20%K值之差異小於5,000N/mm2。
  2. 如申請專利範圍第1項之半導體元件，其中該等第一導電粒子在220℃與110Mpa之條件下熱壓縮該各向異性導電膜5秒時，具有壓縮應變範圍從5%至40%。
  3. 如申請專利範圍第1項之半導體元件，其中該核心包括該二氧化矽複合物，該二氧化矽複合物包括聚合物樹脂以及二氧化矽，該聚合物樹脂係至少一種擇自於由下列所構成之群組之單體之聚合物：可交聯聚合之單體以及單官能單體。
  4. 如申請專利範圍第3項之半導體元件，其中該聚合物樹脂包括該可交聯聚合之單體，該可交聯聚合之單體包括至少一種擇自於由下列所構成之群組：乙烯基苯單體、烯丙基化合物單體以及丙烯酸酯單體。
  5. 如申請專利範圍第3項之半導體元件，其中該聚合物樹脂包括該單官能單體，該單官能單體包括至少一種擇自於由下列所構成之群組：苯乙烯單體、(甲基)丙烯酸酯單體、氯乙烯、醋酸乙烯酯、乙烯醚、丙酸乙烯酯以及丁酸乙烯酯。
  6. 如申請專利範圍第3項之半導體元件，其中以該二氧化矽複合物之總量為基準，該二氧化矽複合物包含15重量%至90重量%之二氧化矽。
  7. 如申請專利範圍第1項之半導體元件，其中該等第一導電粒子具有0.1μm至200μm之平均粒徑。
  8. 如申請專利範圍第1項之半導體元件，其中該等第一導電粒子包括在該核心上之導電外殼。
  9. 如申請專利範圍第1項之半導體元件，其中該等第一導電粒子在其之表面上具有突出物。
  10. 如申請專利範圍第1項之半導體元件，其中該等第二導電粒子具有包括聚合物樹脂之核心。
  11. 如申請專利範圍第1項之半導體元件，其中該等第一導電粒子在其表面上每單位表面積中具有10至40個突出物。
  12. 如申請專利範圍第1項之半導體元件，其中該等第二導電粒子在其表面上每單位表面積中具有0至10個突出物。
  13. 如申請專利範圍第1項之半導體元件，其中該等第二導電粒子存在之數量，以總導電粒子100重量份為基準， 為1至30重量份。
  14. 如申請專利範圍第1項之半導體元件，其中：該各向異性導電膜進一步包括一在該第一導電層上之第二導電層，以及該第二導電層包括該等第二導電粒子。
  15. 如申請專利範圍第1項之半導體元件，其中：該各向異性導電膜進一步包括一在該第一導電層上之第二導電層，且該等第一導電粒子之第一表面粗糙度係大於該等第二導電粒子之第二表面粗糙度。
  16. 一種半導體元件，其包含：一配線基材，其具有金屬以及金屬氧化物層置於其之最外層上；一各向異性導電膜，其貼至該配線基材之晶片安裝表面；以及一半導體晶片，其安裝在該各向異性導電膜上，其中：該各向異性導電膜直接毗連該金屬以及金屬氧化物層，以及包括一包括第一導電粒子之第一導電層，以及該等第一導電粒子具有從7,000N/mm2至12,000N/mm2之20%K值，以及在220℃，110Mpa之條件下熱壓縮該各向異性導電膜5秒時，具有從5%至40%之壓縮應變範圍，以及 該各向異性導電膜進一步包括具有與該等第一導電粒子之20%K值不同之第二20%K值的第二導電粒子，該第二20%K值之範圍為從3,000N/mm2至7,000N/mm2，以及該第一導電粒子之20%K值與該第二導電粒子之第二20%K值之差異小於5,000N/mm2。
  17. 如申請專利範圍第16項之半導體元件，其中該各向異性導電膜包括在該第一導電層上之第二導電層，該第二導電層包括該等第二導電粒子。
  18. 如申請專利範圍第16項之半導體元件，其中該等第一導電粒子包括在其表面上之突出物。
TW101148380A 2011-12-20 2012-12-19 以含有導電微球之各向異性導電膜連接的半導體元件 TWI550640B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110138246A KR101375298B1 (ko) 2011-12-20 2011-12-20 전도성 미립자 및 이를 포함하는 이방 전도성 필름

Publications (2)

Publication Number Publication Date
TW201333974A TW201333974A (zh) 2013-08-16
TWI550640B true TWI550640B (zh) 2016-09-21

Family

ID=48609290

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101148380A TWI550640B (zh) 2011-12-20 2012-12-19 以含有導電微球之各向異性導電膜連接的半導體元件

Country Status (4)

Country Link
US (1) US20130154095A1 (zh)
KR (1) KR101375298B1 (zh)
CN (1) CN103178033B (zh)
TW (1) TWI550640B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9475963B2 (en) 2011-09-15 2016-10-25 Trillion Science, Inc. Fixed array ACFs with multi-tier partially embedded particle morphology and their manufacturing processes
KR101628440B1 (ko) * 2013-10-31 2016-06-08 제일모직주식회사 이방성 도전 필름 및 이를 이용한 반도체 장치
JP5996806B2 (ja) * 2014-05-12 2016-09-21 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体
JP6432240B2 (ja) * 2014-09-19 2018-12-05 日立化成株式会社 導電粒子形状評価装置及び導電粒子形状評価方法
JP6507552B2 (ja) * 2014-10-03 2019-05-08 日立化成株式会社 導電粒子
JP6507551B2 (ja) * 2014-10-03 2019-05-08 日立化成株式会社 導電粒子
KR20180008635A (ko) * 2015-05-14 2018-01-24 트릴리온 사이언스 인코포레이티드 멀티-티어 부분적으로 매립된 입자 모폴로지를 갖는 개선된 고정식 어레이 acf 및 이의 제조 방법
JP7039883B2 (ja) * 2016-12-01 2022-03-23 デクセリアルズ株式会社 異方性導電フィルム
WO2018101106A1 (ja) * 2016-12-01 2018-06-07 デクセリアルズ株式会社 異方性導電フィルム
CN106782758B (zh) * 2017-01-05 2018-09-25 京东方科技集团股份有限公司 导电粒子及其制造方法和各向异性导电胶
KR101976703B1 (ko) * 2017-08-31 2019-05-09 주식회사 아이에스시 검사용 소켓 및 도전성 입자
CN109830503A (zh) * 2019-01-08 2019-05-31 云谷（固安）科技有限公司 柔性显示面板
KR102357279B1 (ko) 2019-06-10 2022-01-28 주식회사 엘지화학 반도체 회로 접속용 접착제 조성물 및 이를 포함한 접착 필름
CN112562886A (zh) * 2019-09-10 2021-03-26 南昌欧菲生物识别技术有限公司 异方性导电膜及其制备方法、邦定结构和超声波生物识别装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021054A (en) * 2008-10-14 2010-06-01 Nippon Chemical Ind Conductive powder and manufacturing method of conductive material and conductive particle containing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3119230B2 (ja) * 1998-03-03 2000-12-18 日本電気株式会社 樹脂フィルムおよびこれを用いた電子部品の接続方法
JP3826605B2 (ja) * 1999-03-08 2006-09-27 セイコーエプソン株式会社 半導体装置の実装構造の製造方法、液晶装置、および電子機器
US20020001701A1 (en) * 1999-09-07 2002-01-03 Hitoshi Matsunaga Conductive sheet containing conductive particles
JP3880600B2 (ja) * 2004-02-10 2007-02-14 松下電器産業株式会社 半導体装置およびその製造方法
KR100667375B1 (ko) * 2004-12-16 2007-01-10 제일모직주식회사 이방전도성 접속부재용 고분자 수지 미립자, 전도성 미립자 및 이를 포함한 이방 전도성 접속재료
US20060280912A1 (en) * 2005-06-13 2006-12-14 Rong-Chang Liang Non-random array anisotropic conductive film (ACF) and manufacturing processes
KR100766181B1 (ko) * 2007-04-09 2007-10-10 엘에스전선 주식회사 다층 이방성 도전 필름
EP2211354B1 (en) * 2007-10-22 2020-12-16 Nippon Chemical Industrial Co., Ltd. Coated conductive powder and conductive adhesive using the same
JP5226562B2 (ja) * 2008-03-27 2013-07-03 デクセリアルズ株式会社 異方性導電フィルム、並びに、接合体及びその製造方法
JP4640531B2 (ja) 2009-07-02 2011-03-02 日立化成工業株式会社 導電粒子
JP5184612B2 (ja) * 2010-11-22 2013-04-17 日本化学工業株式会社 導電性粉体、それを含む導電性材料及びその製造方法
KR101995599B1 (ko) * 2011-03-16 2019-07-02 데쿠세리아루즈 가부시키가이샤 광 반사성 이방성 도전 접착제 및 발광 장치
US20120295098A1 (en) * 2011-05-19 2012-11-22 Trillion Science, Inc. Fixed-array anisotropic conductive film using surface modified conductive particles

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021054A (en) * 2008-10-14 2010-06-01 Nippon Chemical Ind Conductive powder and manufacturing method of conductive material and conductive particle containing the same

Also Published As

Publication number Publication date
US20130154095A1 (en) 2013-06-20
TW201333974A (zh) 2013-08-16
KR101375298B1 (ko) 2014-03-19
KR20130070965A (ko) 2013-06-28
CN103178033B (zh) 2016-01-06
CN103178033A (zh) 2013-06-26

Similar Documents

Publication Publication Date Title
TWI550640B (zh) 以含有導電微球之各向異性導電膜連接的半導體元件
KR101403282B1 (ko) 접착제 조성물 및 이것을 이용한 회로 접속 재료, 및 회로 부재의 접속 방법 및 회로 접속체
TWI402321B (zh) An adhesive composition and a circuit connecting material using the same, and a method of connecting a circuit member and a circuit connecting body
EP3045508A1 (en) Adhesive and light-emitting device
JPWO2009017200A1 (ja) 回路接続材料、それを用いた回路部材の接続構造及び回路部材の接続方法
KR101271814B1 (ko) 도전 입자
JP4640531B2 (ja) 導電粒子
US20150047878A1 (en) Electroconductive particle, circuit connecting material, mounting body, and method for manufacturing mounting body
TWI548718B (zh) A circuit-connecting material, and a method of manufacturing the same
KR102517498B1 (ko) 도전 재료, 및 접속체의 제조 방법
JP6237855B2 (ja) 接着フィルム、回路部材の接続構造及び回路部材の接続方法
JP2012021140A (ja) 回路接続用接着フィルム、これを用いた回路接続構造体及び回路部材の接続方法
JP2010067360A (ja) 異方性導電膜およびその使用方法
JP2007224111A (ja) 異方導電性接着シート及びその製造方法
TWI530966B (zh) 各向異性導電顆粒、各向異性導電膜組合物、導電膜及裝置
TWI554162B (zh) 電路連接用接著膜及其用途、電路連接構造體及其製造方法、以及電路構件的連接方法
KR20200080337A (ko) 접속 재료
JP2018104653A (ja) 接着剤組成物の選別方法、回路部材の接続方法、接続構造体、接着剤組成物及びフィルム状接着剤
WO2016052130A1 (ja) 異方性導電フィルム、及び接続方法
KR101534841B1 (ko) 돌기형 도전성 미립자 및 이를 포함하는 이방 도전성 필름
TWI452103B (zh) 電路連接用接著膜及其用途、電路連接構造體及其製造方法、以及電路構件的連接方法
KR20110059274A (ko) 이방성 도전접속용 절연 도전성 입자 및 이를 이용한 이방성 도전접속재료
KR20130073191A (ko) 이방 전도성 필름
WO2018139552A1 (ja) 絶縁被覆導電粒子、異方導電フィルム、異方導電フィルムの製造方法、接続構造体及び接続構造体の製造方法
KR101447125B1 (ko) 이방성 도전 필름

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees