CN103178033A - 由包括导电微球的各向异性导电膜连接的半导体装置 - Google Patents

由包括导电微球的各向异性导电膜连接的半导体装置 Download PDF

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CN103178033A
CN103178033A CN2012105584378A CN201210558437A CN103178033A CN 103178033 A CN103178033 A CN 103178033A CN 2012105584378 A CN2012105584378 A CN 2012105584378A CN 201210558437 A CN201210558437 A CN 201210558437A CN 103178033 A CN103178033 A CN 103178033A
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conductive particle
conductive
particle
conductive film
anisotropic conductive
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CN103178033B (zh
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柳·阿伦
金南柱
朴憬修
朴永祐
徐准模
武巿元秀
鱼东善
崔贤民
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Cheil Industries Inc
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Cheil Industries Inc
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Abstract

本发明是由包括导电微球的各向异性导电膜连接的半导体装置。公开了一种由各向异性导电膜连接的半导体装置。所述各向异性导电膜包括含第一导电颗粒的第一导电层。所述第一导电颗粒包括含二氧化硅或二氧化硅复合物的核并具有7,000N/mm2至12,000N/mm2的20%K值。

Description

由包括导电微球的各向异性导电膜连接的半导体装置
技术领域
本发明涉及由包括导电微球的各向异性导电膜连接的半导体装置。
背景技术
近年来，各向异性导电粘合剂已经广泛地用于电子元件的连接，例如半导体装置连接到电路板。对各种显示器，例如液晶显示器（LCD）/有机发光装置（OLED）和半导体装置的电路连接时，各向异性导电粘合剂有利地用作电路端子的连接材料。
导电微球已经被制成碳纤维、焊球等形态，并且目前以镍球或银球的形态，或通过用镍、金或钯涂布球形树脂颗粒，或通过用绝缘材料处理球形树脂颗粒而制备。
用于驱动IC和玻璃面板之间的电连接的各向异性导电膜被称为COG（玻璃上芯片）ACF。在高温和高压的条件下，COG ACF在驱动IC和玻璃面板之间粘合，以便驱动IC的金隆起焊盘可通过变形的导电颗粒电连接到玻璃面板的端子。对于面板上端子的最上层由氧化铟锡（ITO）组成的LCD，在合适的范围内具有大的变形性的导电颗粒有利地提供了宽的接触面积。对于面板上端子的最上层由金属组成的OLED，具有高硬度的导电颗粒有利地渗入金属上的氧化物层。即，用于LCD的COG ACF的导电颗粒具有相对低的硬度而用于OLED的COG ACF的导电颗粒具有相对高的硬度是有利的。
同时，在确定各向异性导电膜的成功连接的操作中，观察到导电颗粒的变形。然而，当使用硬的导电颗粒时，导电颗粒没有充分地变形，因而造成难以确定各向异性导电膜的连接。尤其是，当在颗粒的表面形成大量的突起时，颗粒的表面出现了漫反射，造成更加难以观察颗粒，因而劣化了可见性。
此外，具有高硬度的导电微球在压缩时趋于呈现低的变形性，并且在面板的端子和驱动IC的隆起焊盘之间压缩时产生压缩力。在这种情况下，压缩力可转移至面板和驱动IC，引起物理损坏和连接缺陷。
因此，为了稳定地实现电极间接触面积的最大化同时确保两者间良好的连接，对于颗粒而言必需在初始压缩阶段呈现硬度并随压缩进行适当地变形。
发明内容
对于面板上端子的最上层由氧化铟锡（ITO）组成的LCD，在合适的范围内具有大的变形性的导电颗粒有利地提供了宽的接触面积，而对于面板上端子的最上层由金属组成的OLED，具有高硬度和其表面上具有大量突起的导电颗粒有利地渗入了金属上的氧化物层。
如上所述，然而，具有高硬度并且在其表面形成大量突起的导电颗粒的使用导致了低的可见性，从而造成难以确定所述各向异性导电膜的连接。
为解决这样的问题，本发明人开发了一种通过各向异性导电膜连接的半导体装置，所述各向异性导电膜包含具有高硬度的第一导电颗粒和具有低硬度的第二导电颗粒，以便所述第一导电颗粒提供低的连接电阻，并且所述第二导电颗粒允许确定连接结果和测量合适的粘合压力，从而提供增强的连接性能和有效的可见性。
本发明的一个方面是解决由于具有相对高的硬度和/或在其表面形成大量突起的导电颗粒的不明显变形造成的低可见性和难以确定膜连接这样的问题。
本发明的另一个方面是提供了一种由包含导电微球的各向异性导电膜连接的半导体装置，所述导电微球具有充足的硬度以渗入金属氧化物层以提供良好的连接同时呈现压缩变形性，以便不引起端子或隆起焊盘的物理损伤，由此在压缩时所述导电微球在连接基板之间提供增加的接触面积，从而提供优异的导电性。
本发明的再一个方面是提供了一种包含导电微球的各向异性导电膜以及由该各向异性导电膜连接的半导体装置，所述各向异性膜呈现优异的电连接性能。
本发明的一个方面提供了一种由各向异性导电膜连接的半导体装置。其中，所述各向异性导电膜包括含第一导电颗粒的第一导电层，并且所述第一导电颗粒包括含二氧化硅或二氧化硅复合物的核并具有7,000N/mm2至12,000N/mm2的20%K值。
本发明的另一个方面提供了一种由各向异性导电膜连接的半导体装置。其中，所述各向异性导电膜包括含第一导电颗粒和第二导电颗粒的第一导电层，其中，所述第一导电颗粒包括含二氧化硅或二氧化硅复合物的核并具有7,000N/mm2至12,000N/mm2的20%K值，并且所述第二导电颗粒具有不同于所述第一导电颗粒的20%K值且在3,000N/mm2至7,000N/mm2的范围内。所述第一导电颗粒和所述第二导电颗粒间的20%K值之差小于5,000N/mm2。
本发明的再一个方面提供了一种由各向异性导电膜连接的半导体装置。其中，所述各向异性导电膜包括含第一导电颗粒的第一导电层，和在所述第一导电层上形成并含第二导电颗粒的第二导电层，其中，所述第一导电颗粒包括含二氧化硅或二氧化硅复合物的核并具有7,000N/mm2至12,000N/mm2的20%K值，并且具有比所述第二导电颗粒高的硬度。
本发明的又一个方面提供了一种由各向异性导电膜连接的半导体装置。其中，所述各向异性导电膜包括含第一导电颗粒的第一导电层，和在所述第一导电层上形成并含第二导电颗粒的第二导电层，其中，所述第一导电颗粒包括含二氧化硅或二氧化硅复合物的核并具有7,000N/mm2至12,000N/mm2的20%K值，并且具有高于所述第二导电颗粒的表面粗糙度。
在本发明的又一个方面中，半导体装置包括布线基板，所述布线基板具有设置于所述布线基板最外层的金属和金属氧化物层；各向异性导电膜，所述各向异性导电粘附于所述布线基板的芯片安装表面；和半导体芯片，所述半导体芯片安装在所述各向异性导电膜上，其中，所述各向异性导电膜直接连接所述金属和金属氧化物层，并包括含第一导电颗粒的第一导电层。其中，所述第一导电颗粒具有7,000N/mm2至12,000N/mm2的20%K值，并在220℃和110Mpa的条件下热压缩所述各向异性导电膜5秒时具有5%至40%的压缩应变。
附图说明
图1显示了根据导电颗粒表面形成的突起密度的可见性说明图，其中，右侧图像为左侧图像的放大图，显示了第一导电颗粒具有高硬度以提供低的变形性而第二导电颗粒具有低的硬度以提供良好的可见性；
图2显示了实验例2的评估结果图；
图3显示了用纳米-压痕仪测量导电颗粒硬度的说明图。
图4为根据本发明的一个实施方式的具有高的表面粗糙度的第一导电颗粒的显微照片；
图5为根据本发明的一个实施方式的具有低的表面粗糙度的第二导电颗粒的显微照片；
图6为显示了呈现出良好的粘合后可见性的导电颗粒的一个实施例（实施例4）的显微照片；和
图7为显示了呈现出差的粘合后可见性的导电颗粒的一个实施例（对比例8）的显微照片。
具体实施方式
现将详细说明本发明的实施方式。对本领域技术人员显而易见的细节说明将省略。
在一个实施方式中，本发明提供了由各向异性导电膜连接的半导体装置，其中，各向异性导电膜包括含第一导电颗粒的第一导电层，并且所述第一导电颗粒包括含二氧化硅或二氧化硅复合物的核，并具有7,000N/mm2至12,000N/mm2的20%K值。
在本发明中，导电颗粒的硬度将由K值表示，其可通过用纳米压痕仪在单个导电颗粒变形时得到负荷，并通过等式1基于负荷计算（参见图3）而测量：
K值(N/mm2)=(3/21/2)·F·S-3/2·R-1/2    ---(1)，
其中，F为导电颗粒压缩变形时的负荷N；S为导电颗粒压缩变形时导电颗粒的压缩位移；且R为导电颗粒的半径（mm）。
如本文所用，术语“20%K值”表示当S/2R=0.2时的K值。
在本发明中，第一导电颗粒优选具有在7,000N/mm2至12,000N/mm2的范围内的20%K值，更优选8,000N/mm2至11,000N/mm2。在20%K值的这个范围内，能够获得具有足够硬度的导电颗粒以渗入用于连接的氧化物层，并获得呈现出所需的轻微变形的高硬度导电颗粒。第一导电颗粒在220℃和110MPa的条件下热压5秒可具有5%至40%的压缩应变。
在本发明中，第一导电颗粒可包含使导电颗粒具有7,000N/mm2至12,000N/mm2的20%K值的任何常规的核。优选地，第一导电颗粒包括含二氧化硅（SiO2）或二氧化硅复合物的核。
在一些实施方式中，第一导电颗粒的核可由二氧化硅组成。
如本文所用，用于第一导电颗粒的核的二氧化硅复合物是指聚合物树脂和二氧化硅（SiO2）的复合物。
在“聚合物树脂和二氧化硅的复合物”中，“聚合物树脂”可包括选自由可交联聚合的单体和单官能单体组成的组中的至少一种单体的聚合物，并且基于复合物的总重量，其可以10wt%至85wt%的量存在，而基于复合物的总重量，“二氧化硅”可以15w%至90wt%的量存在。聚合物树脂可为具有高交联度的高度交联的有机聚合物颗粒。
在本发明中，可交联聚合的单体可包括选自由乙烯基苯单体，例如二乙烯苯；烯丙基化合物，例如1,4-丁二醇乙烯醚、二乙烯砜、邻苯二甲酸二丙烯酯、二烯丙基丙烯酰胺、三烯丙基(异)氰脲酸酯和偏苯三酸三烯丙酯；丙烯酸酯单体，例如二(甲基)丙烯酸乙二醇酯、二(甲基)丙烯酸丙二醇酯、四(甲基)丙烯酸季戊四醇酯、三(甲基)丙烯酸季戊四醇酯、二(甲基)丙烯酸季戊四醇酯、三(甲基)丙烯酸三羟甲基丙烷酯、六(甲基)丙烯酸二季戊四醇酯、五(甲基)丙烯酸二季戊四醇酯和三(甲基)丙烯酸甘油酯等组成的组中的至少一种，但不限于此。
在本发明中，单官能单体可包括选自由苯乙烯单体，例如苯乙烯、甲基苯乙烯、间氯甲基苯乙烯和乙基苯乙烯，(甲基)丙烯酸酯单体，例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸月桂酯和(甲基)丙烯酸十八烷基酯，氯乙烯，乙酸乙烯酯，乙烯醚，丙酸乙烯酯，丁酸乙烯酯等组成的组中的至少一种，但不限于此。
通过向聚合物树脂添加二氧化硅得到二氧化硅复合物，由此该聚合物树脂可在强度、硬度和耐磨性方面具有显著改善的物理性质，因而比其它常规的聚合物树脂硬很多。因而，该二氧化硅复合物可有利地用于导电颗粒，该导电颗粒在OLED中需要渗入用于连接的金属氧化物层。
第一导电颗粒可制备为单一类型的导电颗粒，或通过混合两种或更多种类型的导电颗粒而制备。
第一导电颗粒可具有0.1μm至200μm范围内的平均粒径。第一导电颗粒可进一步包括在含二氧化硅或二氧化硅复合物的核上形成的壳。每个第一导电颗粒都可包括在其表面形成的突起。第一导电颗粒可包括每单位表面积（1μm2）10至40个突起，更优选每单位表面积15至30个突起。在这个范围内，第一导电颗粒可呈现优异的连接性能。
在另一个实施方式中，本发明提供了由各向异性导电膜连接的半导体装置，其中各向异性导电膜包括含第一导电颗粒和第二导电颗粒的第一导电层。其中，第一导电颗粒包括含二氧化硅或二氧化硅复合物的核，并且第二导电颗粒具有3,000N/mm2至7,000N/mm2范围内的20%K值。此外，第一导电颗粒和所述第二导电颗粒间的20%K值之差小于5,000N/mm2。
在这个实施方式中，第二导电颗粒优选具有3,000N/mm2至7,000N/mm2范围内的20%K值，更优选地4,500N/mm2至6,500N/mm2。在这个范围内，导电颗粒可呈现合适的变形性。
在这个实施方式中，包含在第一导电层中的第一导电颗粒可具有高硬度，因此在压缩时起到电路端子间电流流路的作用而颗粒没有损坏和变形，并且包含在第二导电层中的第二导电颗粒可在压缩时易于破裂或变形，从而使各向异性导电膜的压缩程度得到确定。
基于100重量份的所有导电颗粒，第二导电颗粒可以1至30重量份的量存在。
第一导电颗粒和第二导电颗粒间的20%K值之差可大于0至小于5,000N/mm2。当其间的20%K值之差大于或等于5,000N/mm2时，由于第一导电颗粒和第二导电颗粒间的过度差异使连接电阻增加，从而引起连接性能的劣化。另一方面，如果第一导电颗粒和第二导电颗粒具有相同的硬度，则采用不同类型的导电颗粒例如第一导电颗粒和第二导电颗粒是无用的。
只要颗粒具有3,000N/mm2至7,000N/mm2范围内的20%K值，或呈现相近的硬度等级，则第二导电颗粒可由本领域中已知的任何常规导电颗粒组成。
第二导电颗粒的实例可包括含Au、Ag、Ni、Cu、焊料等的金属颗粒；碳颗粒；通过涂布树脂颗粒，例如聚乙烯、聚丙烯、聚酯、聚苯乙烯和聚乙烯醇树脂颗粒而制备的金属涂布的树脂颗粒、或用金属，例如Au、Ag、Ni等改性其的树脂颗粒；和通过用绝缘颗粒涂布上述导电颗粒制备的绝缘处理的导电颗粒，但不限于此。
第二导电颗粒优选包括聚合物树脂的核，更优选聚甲基丙烯酸甲酯或聚硅氧烷树脂。
第二导电颗粒可制备为单一类型的导电颗粒，或通过混合两种或更多种类的导电颗粒而制备。
在这个实施方式中，包含在第一导电层中的第一导电颗粒可具有高硬度，因此在压缩时起到电路端子间电流流路的作用而颗粒没有损坏和变形，而包含在第二导电层中的第二导电颗粒可在压缩时易于破裂或变形，从而使各向异性导电膜的压缩程度得到确定。
此外，第一导电颗粒（参照图4）具有比第二导电颗粒（参照图5）高的表面粗糙度。换句话说，当第二导电颗粒的表面粗糙度低于第一导电颗粒的表面粗糙度时，能够通过防止光的漫反射而改善可见性。根据多种因素，例如材料及其制备方法，可确定第一导电颗粒和第二导电颗粒的表面粗糙度。例如，当在第一导电颗粒的表面形成突起时，第一导电颗粒可具有增加的表面粗糙度。此处，可使用本领域中已知的任何方法在导电颗粒的表面形成突起，但不限于此。例如，通过将核-壳结构的微球浸入含有金属盐溶液和还原剂的化学电镀溶液中可进行化学电镀。
第一导电颗粒的每个突起从相应的导电颗粒外表面突出高度优选为0.1μm或更高，更优选为0.2μm或更高。
第一导电颗粒在其每单位表面积（1μm2）上可包括10至40个突起，更优选每单位表面积上包括15至30个突起。在这个范围内，第一导电颗粒可呈现优异的连接性能。
第二导电颗粒在其表面上可具有突起或可不具有突起。
第二导电颗粒在其每单位表面积（1μm2）上可包括0至10个突起，更优选在每单位表面积上包括0至5个突起。在突起的这个范围内，能够通过导电膜的粘合确定合适的连接，从而提供优异的可见性以确定合适的粘合压力同时通过突起的作用而减小连接电阻。
如本文所用，颗粒所涉及的术语“可见性”是指允许观察者用裸眼或利用显微镜观察物体的物体性质。此外，如本文所使，第二导电颗粒所涉及的术语“可见性”是指为了确定通过各向异性导电膜粘合是否获得合适的连接而允许观察者观察导电颗粒变形的导电颗粒性质。
由于第二导电颗粒具有相对低的硬度，第二导电颗粒由于易变形可促进确定各向异性导电膜的合适连接，即优异的可见性。
具体地，当用显微镜等观察具有在其表面形成的大量突起的导电颗粒时，导电颗粒的表面变暗，从而造成难以观察导电颗粒的变形。另一方面，当观察具有在其表面没有突起或少量形成的突起的导电颗粒时，导电颗粒的表面变亮，从而促进观察其变形（参照图1和图2）。
在又一个实施方式中，本发明提供了一种由各向异性导电膜连接的半导体装置，其中，各向异性导电膜包括含第一导电颗粒的第一导电层，和在第一导电层上形成的并含第二导电颗粒的第二导电层。其中，所述第一导电颗粒包括含二氧化硅或二氧化硅复合物的核，并具有7,000N/mm2至12,000N/mm2的20%K值。其中，所述第一导电颗粒具有比所述第二导电颗粒高的硬度。
在这个实施方式中，第一导电颗粒和第二导电颗粒之间的20%K值之差可为5,000N/mm2或更高。第二导电颗粒可在压缩时易于破裂或变形，从而通过使各向异性导电膜的压缩程度得到确定而改善导电颗粒的可见性。当第一导电颗粒和第二导电颗粒之间的20%K值之差大于或等于5,000N/mm2时，各向异性导电膜可在压缩时易于变形，从而促进可见性的改善。
在这个实施方式中，包含在第一导电层中的第一导电颗粒可具有高硬度，因此在压缩时起到电路端子间电流流路的作用而没有颗粒的损坏或变形，而包含在第二导电层中的第二导电颗粒在压缩时可易于破裂或变形，从而使各向异性导电膜的压缩程度得到确定。
当第一导电颗粒和第二导电颗粒都包含在各向异性导电膜的一层中时，第二导电颗粒劣化了加工过程中用于各向异性导电膜的组合物流动性和粘性以及分散性。结果，由于劣化的组合物流动性，为了获得期望的预压缩性能可在预压缩时提高温度。因此，在分散性、预压缩温度、粘度和流动性方面，第一导电颗粒和第二导电颗粒根据可分别包含在第一导电层和第二导电层中。
尤其是，由于第二导电颗粒包含在第二导电层中，因此第一导电颗粒在第一导电层中具有改善的分散度。各向异性导电膜的分散度可由颗粒密度得到。根据本发明实施方式的各向异性导电膜可具有20,000至70,000范围内的分散度，优选30,000至60,000。分散度由膜涂布后的颗粒密度得到确定，用显微镜给颗粒拍照后，根据由KAMSCOPE计数的颗粒数通过以下等式2计算颗粒密度。
<等式2>
分散度=（第二导电颗粒数/第一导电颗粒数）×100
在这个实施方式中，基于用于第一导电层的组合物总量，第一导电颗粒可以1wt%至30wt%的量存在，而基于用于第二导电层的组合物总量，第二导电颗粒可以1wt%至30wt%的量存在。
通过用导电金属涂布核化合物可制备第一导电颗粒和/或第二导电颗粒。用于第一导电颗粒的核化合物可具有高于用于第二导电颗粒的核化合物的硬度。关于用于第一导电颗粒的核化合物，只要核化合物可向导电颗粒提供7,000N/mm2至12,000N/mm2的20%K值，本领域中所用的任何常规核化合物都可使用而无限制。优选地，用于第一导电颗粒的核化合物包含二氧化硅（SiO2）或二氧化硅复合物。用于所述第二导电颗粒的核化合物可包含树脂，例如环氧树脂、三聚氰胺树脂、聚氨酯树脂、苯胍胺树脂、苯酚树脂、聚烯烃树脂、聚醚树脂、聚酯树脂、聚苯乙烯树脂、NBR树脂、SBR树脂、BR树脂、聚乙烯醇树脂和聚有机硅树脂，或其改性树脂。或者，通过用金属，例如金、银、镍、铜、钯、焊料等涂布这样的树脂颗粒可制备第二导电颗粒。使用选自这些核化合物中的至少一种制备第二导电颗粒。
在另一个实施方式中，本发明提供了由各向异性导电膜连接的半导体装置，其中，各向异性导电膜包括含第一导电颗粒的第一导电层，和在第一导电层上形成并含第二导电颗粒的第二导电层。第一导电颗粒包括含二氧化硅或二氧化硅复合物的核，并具有7,000N/mm2至12,000N/mm2范围内的20%K值。第一导电颗粒具有高于第二导电颗粒的表面粗糙度。
在这个实施方式中，第一导电颗粒的表面粗糙度（参照图4）可大于第二导电颗粒的表面粗糙度（参照图5）。换句话说，当第二导电颗粒的表面粗糙度低于第一导电颗粒的表面粗糙度时，能够通过防止光的漫反射而改善颗粒的可见性。
在这个实施方式中，第一导电颗粒和第二导电颗粒的表面粗糙度可通过SEM分析得到确定。
根据多种因素，例如材料及其制备方法可确定第一导电颗粒和第二导电颗粒的表面粗糙度。例如，当在第一导电颗粒的表面形成突起时，第一导电颗粒可具有增加的表面粗糙度。这里，本领域中已知的任何方法都可用于在导电颗粒的表面形成突起而无限制。例如，通过将核-壳结构的微球浸入含有金属盐溶液和还原剂的化学电镀溶液中可进行化学电镀。第一导电颗粒的每个突起从相应的导电颗粒外表面突出高度优选为0.1μm或更高，更优选为0.2μm或更高。
在这个实施方式中，虽然具有不同硬度的第一导电颗粒和第二导电颗粒可根据电路的间距具有平均粒径，第一导电颗粒和第二导电颗粒通常可具有2μm至30μm的平均粒径，优选2μm至6μm。第一导电颗粒可具有与第二导电颗粒相同或不同的粒径。当电路具有微间距时，期望第一导电颗粒具有小于第二导电颗粒的平均粒径。
在这个实施方式中，基于用于第一导电层的组合物总量，第一导电颗粒可以1wt%至30wt%的量存在，而基于用于第二导电层的组合物总量，第二导电颗粒可以1wt%至30wt%的量存在。
第一导电颗粒在其每单位表面积（1μm2）上可包括10至40个突起，更优选在每单位表面积上包括15至30个突起。在这个范围内，第一导电颗粒可呈现优异的连接性能。
第二导电颗粒在其表面上可具有或可没有突起。
第二导电颗粒在其每单位表面积（1μm2）上可包括0至10个突起，更优选在每单位表面积上包括0至5个突起。在突起的这个范围内，能够在导电膜粘合时确定合适的连接，从而提供优异的可见性度以确定合适的粘合压力同时利用突起降低连接电阻。
在另一个实施方式中，本发明提供了半导体装置，其包括布线基板，该布线基板具有设置于布线基板最外层的金属和金属氧化物层；各向异性导电膜，该各向异性导电膜粘附于布线基板的芯片安装表面；和半导体芯片，该半导体芯片安装在各向异性导电膜上，其中，各向异性导电膜直接连接金属和金属氧化物层，并包括含第一导电颗粒的第一导电层。其中，第一导电颗粒具有7,000N/mm2至12,000N/mm2范围内的20%K值，并在220℃在110Mpa的负荷下热压缩5秒时具有5%至40%范围内的压缩应变。
通常，为了实现稳定的电极间接触面积的最大化同时提供电极间合适的连接，对于导电微球而言必需在初始压缩阶段呈现高硬度并随压缩进行适当地变形。
根据这个实施方式，导电微球优选具有7,000N/mm2至12,000N/mm2范围内的20%K值，更优选8,000N/mm2至11,000N/mm2。在20%K值的这个范围内，导电微球通过面板上端子最上层的金属可提供合适的连接。如果导电微球的20%K值小于7,000N/mm2，则导电微球不硬，因而不能通过端子的金属氧化物层提供合适的连接，从而引起连接缺陷。如果导电微球的20%K时的值超过12,000N/mm2，则介于电极间的导电微球不易于变形，因此电极表面和导电微球间的接触面积无法充分扩大，从而造成难以降低连接电阻。
如果压缩应变小于5%，则压缩力可直接转移至每个面板和驱动IC，引起其物理损伤，从而引起连接缺陷。如果压缩应变超过40%，则对于导电微球而言难以在粘合剂的收缩/膨胀时通过外部加热而充分恢复，因此在导电微球和电极表面间会产生不期望的间隙。
通过以下等式可计算压缩应变：
压缩应变=(R1-R2)/(R1+R2)×100，
其中，R1和R2分别表示，在220℃在110MPa的负荷下热压缩各向异性导电膜5秒颗粒变形时，颗粒的水平直径和垂直直径。
在这个实施方式中，第一导电颗粒可包括含二氧化硅或二氧化硅复合物的核。当二氧化硅加到聚合物树脂中时，聚合物树脂可具有显著增强的强度、刚度和耐磨性。进一步，与二氧化硅珠用作核的情况相比，包含聚合物树脂的第一导电颗粒具有一定程度的弹性，因此可在连接阶段有利地呈现挠性压缩和变形。
在这个实施方式中，基于聚合物树脂和SiO2复合物的总量，SiO2可以15wt%至90wt%的量存在。在这个范围内，导电微球可具有期望的硬度和连接可靠性。
在这个实施方式中，第一导电层可进一步包含第二导电颗粒，其具有低于第一导电颗粒的20%K值。
进一步，在这个实施方式中，各向异性导电膜可进一步包括第二导电层，其在第一导电层上形成，并包含具有低于第一导电颗粒的20%K值的第二导电颗粒。第一导电颗粒可具有在其表面形成的突起。
根据本发明的用于各向异性导电膜的组合物可进一步包含绝缘粘合剂组分和固化剂。关于绝缘粘合剂组分，用于各向异性导电膜的组合物的任何常规组分都可使用而无限制。例如，绝缘粘合剂组分可包括选自由烯烃树脂例如聚乙烯、聚丙烯等、丁二烯树脂例如丙烯腈丁二烯共聚物和羧基链端的丙烯腈丁二烯共聚物、聚酰亚胺树脂、聚酰胺树脂、聚酯树脂、聚乙烯醇缩丁醛树脂、乙烯-乙酸乙烯酯共聚物、苯乙烯-丁烯-苯乙烯（SBS）、苯乙烯-乙烯-丁烯-苯乙烯（SEBS）、丙烯腈丁二烯橡胶（NBR）、环氧树脂、聚氨酯树脂、(甲基)丙烯酸树脂、苯氧树脂等组成的组中的至少一种，但不限于此。它们可单独使用，或用于其组合物。
在本发明中，固化剂促进固化反应，从而确保连接层之间的粘合和连接可靠性。固化剂可包括选自单官能或多官能(甲基)丙烯酸酯低聚物和单体的自由基可固化单元。优选地，二官能(甲基)丙烯酸酯单体或低聚物用作固化剂。
固化体系可包括选自环氧(甲基)丙烯酸酯树脂，其分子间结构包含2-溴氢醌，间苯二酚，邻苯二酚，双酚类如双酚A、双酚F、双酚AD和双酚S，4,4'-二羟基联苯或双(4-羟苯基)醚的主链；和(甲基)丙烯酸酯低聚物，其包含烷基、芳基、羟甲基、烯丙基、环脂族、卤素（四溴双酚A），或硝基；和含多环芳香环的环氧树脂中的至少一种，但不限于此。
在本发明中，可有利地使用潜伏性型固化剂，并可包含环氧类热固化剂，但不限于此。本领域中已知的任何常规的环氧类热固化剂都可使用而无限制。例如，环氧类热固化剂可包括选自由咪唑、酸酐、胺、肼、阳离子固化剂及其组合物组成的组中的至少一种。
根据本发明的用于各向异性导电膜的组合物可进一步包含疏水性纳米二氧化硅。疏水性纳米二氧化硅在工艺条件下使流动性平稳调节，并诱导了各向异性导电膜固化结构的高强度以防止各向异性导电膜在高温下的膨胀，借此各向异性导电膜可呈现优异的初始粘合和低的连接电阻同时在高温/高湿和热冲击条件下保持连接和粘合的可靠性，从而在长时期确保优异的耐久性。
疏水性纳米二氧化硅颗粒通过有机硅烷化合物的表面处理而制备并具有5nm至20nm的粒径和100m2/g至300m2/g的比表面积。二氧化硅颗粒可包括选自AerosilR-812、Aerosil R-972、Aerosil R-805、Aerosil R-202、Aerosil R-8200（Degussa GmbH）等的至少一种，但不限于此。
用于纳米二氧化硅颗粒表面处理以呈现疏水性性质的有机硅烷化合物可包括选自由乙烯基三氯硅烷、乙烯基三甲基氧硅烷、3-缩水甘油醚氧基丙基三甲氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷、二甲基二氯硅烷、辛基硅烷、六甲基二硅氮烷、八甲基氯代四硅氧烷、聚二甲基硅氧烷、2-氨乙基-3-氨丙基甲基二甲氧基硅烷、3-脲丙基三乙氧基硅烷等组成的组中的至少一种。
根据本发明的用于各向异性导电膜的组合物可有利地用于OLED的COG ACF。
接下来，将参照实施例更详细地阐述本发明的构成和操作。此处，应理解以下实施例仅为说明而提供，而不应以任何方式解释为限制本发明。
实施例
实施例1
包含具有不同硬度和表面突起密度的两类导电颗粒的各向异性导电膜的制备
使用以下组分制备用于各向异性导电膜的组合物：
在固含量方面基于100重量份的各向异性导电膜，
1）环氧树脂：17重量份的BPA（双酚A）环氧树脂（Kukdo Chemical Co.,Ltd.）和19重量份的含多环芳香环的环氧树脂（HP4032D，Dainippon Ink and Chemicals Inc.）；
2）二氧化硅颗粒：4重量份的纳米二氧化硅（R812,Degussa GmbH）；
3）固化剂：35重量份的含咪唑的核-壳型潜伏性固化剂（Asahi Kasei Co.,Ltd.）；
4）第一导电颗粒：29重量份的镍涂布的聚合物树脂和二氧化硅复合物（20%K值：10,000N/mm2，压缩应变：220℃在110MPa的负荷下热压缩5秒时为15%，突起的表面密度：20/μm2）；和
5）第二导电颗粒：6重量份的镍涂布的聚合物树脂导电颗粒（20%K值：6,000N/mm2，压缩应变：220℃在110MPa的负荷下热压缩5秒时为25%，突起的表面密度：4/μm2，Sekisui）。
将制备的液体组合物在室温（25℃）以能避免导电颗粒粉碎的速率搅拌。将搅拌的混合物薄涂在经过硅表面离型处理的聚对苯二甲酸乙二醇酯（PET）基膜上，并通过70℃时在其上吹热风5分钟干燥以生产30μm厚的膜。为制造膜，使用铸刀。
对比例1
仅包含第一导电颗粒作为导电颗粒的各向异性导电膜的制备
除了未使用第二导电颗粒并使用35重量份的第一导电颗粒之外，以与实施例1中相同的方式制备各向异性导电膜。
对比例2
仅包含第二导电颗粒作为导电颗粒的各向异性导电膜的制备
除了未使用第一导电颗粒并使用35重量份的第二导电颗粒之外，以与实施例1中相同的方式制备各向异性导电膜。
表1显示了实施例1和对比例1和2中制备的各向异性导电膜根据重量份的组成。
表1
组成 实施例1 对比例1 对比例2
BPA环氧树脂 17 17 17
HP4032D 19 19 19
纳米二氧化硅 4 4 4
固化剂 25 25 25
第一导电颗粒 29 35-
第二导电颗粒 6- 35
总计 100 100 100
实验例1
初始和可靠性连接电阻的测量
1和对比例1和2的每个各向异性导电膜放入具有2000μm2的隆起焊盘面积和
Figure BDA00002622789400131
厚度的钛电路的玻璃基板和具有2000μm2的隆起焊盘面积的1.7mm厚的芯片之间，然后在220℃和90MPa的条件下压缩和加热5秒钟，从而制备用于4个各向异性导电膜样品中每个的5个样本。
1）预压缩条件：70℃，1秒，1.0MPa
2）主压缩条件：220℃，5秒，90MPa
用四探针法（对应于ASTM F43-64T）测量5个样本中每个的初始连接电阻，并计算平均初始连接电阻。
此外，5个样本中每个在85℃和85% RH放置500小时用于高温/高湿的可靠性评估，并通过ASTM D117测量5个样本中每个的可靠性连接电阻以获得其平均值。
表2显示了实施例1和对比例1和2中制备的各向异性导电膜的初始和可靠性连接电阻的测量结果。
表2
实施例1 对比例1 对比例2
初始连接电阻(Ω) 0.34 0.28 5.1
可靠性连接电阻(Ω) 2.7 2.4 10.3
实验例2
膜粘合后导电颗粒的可见性评估
为评估实施例1和对比例1和2的各向异性导电膜的粘合可见性，在200℃和4.0MPa的条件下压缩每个各向异性导电膜4秒钟，并对通过显微镜是否可确定导电颗粒的变形进行评估。
参照图2提供了可见性的评估结果。
根据实验例1和2，当呈现高硬度的第一导电颗粒的量增加时，连接电阻降低，从而提供了改善的连接性能。因此，含有最大量的第一导电颗粒的对比例1的各向异性导电膜呈现出优于其它膜的连接性能。然而，由于对比例1的各向异性导电膜不包含第二导电颗粒，其没有呈现可见性度。
实施例2
（1）聚合物树脂和二氧化硅复合物的制备
在反应器中，将去离子水和十二烷基硫酸钠乳化剂以称重的量放入，在氮气氛下在70℃搅拌30分钟，然后加入26g作为聚合物树脂的苯乙烯（Junsei Co.,Ltd）、4g二氧化硅和1g过硫酸钾水溶液到混合物中，从而制备具有2μm平均粒径的聚合物树脂和二氧化硅的复合物。
（2）导电微球的制备
将制备的聚合物树脂和二氧化硅的复合物在铬酸和硫酸溶液中浸蚀，浸入氯化镍溶液中以通过还原反应在颗粒表面形成镍精核，然后进行化学电镀镍以形成导电金属层。接着，将具有20nm至100nm粒径的Ni微球沉积在导电金属层上，然后用Au、Pd和Ni的至少一种电镀，从而制备导电微球。
（3）双层各向异性导电膜的制备
实施例和对比例中使用的详细的组分如下。
1．粘结剂体系：双酚A型环氧树脂（YP-50，Kukdo Chemical Co.,Ltd）
2．固化体系：含多环芳香环的环氧树脂（HP4032D，Dainippon Ink and ChemicalInc.）
3．疏水性纳米二氧化硅：纳米二氧化硅（R812,Degussa GmbH）
4．潜伏性固化剂：咪唑微胶囊型（HX3922HP，Asahi Kasei Co.,Ltd）
5．导电微球1：实施例2-（2）中制备的镍涂布的聚合物树脂和二氧化硅的复合物（20%K值：10,000N/mm2，压缩应变：220℃在110MPa的负荷下热压缩5秒时为15%）
6．导电微球2：镍涂布的聚合物树脂导电颗粒（20%K值：5,000N/mm2，压缩应变：220℃在110MPa的负荷下热压缩5秒时为30%，Sekisui）
7．导电微球3：镍涂布的聚合物树脂导电颗粒（20%K值：2,000N/mm2，压缩应变：220℃在110MPa的负荷下热压缩5秒时为3%，NCI）
8．硅烷偶联剂：γ-缩水甘油醚氧基三甲氧基硅烷
9．用于硅烷表面处理的溶液：通过在溶剂中稀释混合比例为2∶1的粘结剂体系和γ-缩水甘油醚氧基丙基三甲氧基硅烷至10%的浓度而制备溶液
10．核-壳橡胶：丁二烯橡胶（Gantz）
a．各向异性导电膜（ACF）的制备
将粘结剂体系、固化体系、实施例2-（2）中制备的导电微球、二氧化硅、潜伏性固化剂和硅烷偶联剂以表3中列出的量与50重量份的溶剂（PGMEA）混合，从而制备用于各向异性导电膜的组合物。将组合物涂布在基膜上至20μm的厚度，并将0.1ml用于硅烷表面处理的溶剂均匀地喷到膜的表面。然后，在70℃干燥组合物5分钟，从而制备期望的各向异性导电膜。
b．不导电的各向异性导电膜（NCF）的制备
将粘结剂体系、固化体系、二氧化硅、潜伏性固化剂和硅烷偶联剂以表3中列出的量与50重量份的溶剂（PGMEA）混合，从而制备用于绝缘粘附层的组合物。然后，将组合物涂布在基膜上至10μm的厚度。然后，在70℃干燥组合物5分钟，从而制备不导电的各向异性导电膜。
c．双层各向异性导电膜的制备
将制备的导电的各向异性导电膜和不导电的各向异性导电膜在40℃在1MPa的负荷下通过层压工艺彼此粘合，从而制备实施例2的双层各向异性导电膜，其中各向异性导电膜堆叠在不导电的膜上。
对比例3和4
除了如表3列出的组合物外，以与实施例2相同的方式制备双层各向异性导电膜（单位：wt%固含量）。
表3
Figure BDA00002622789400151
Figure BDA00002622789400161
根据以下方法，评估实施例2和对比例3和4中制备的膜关于ACF层的连接电阻和可靠性测试后的连接电阻。结果示于表4中。
<物理性质的评估>
1．初始连接电阻：使用具有1430μm2隆起焊盘面积的驱动IC芯片和具有
Figure BDA00002622789400162
厚度的电路的玻璃基板作为被粘物。这里，端子的最上层由钛组成。将每个制备的膜放在被粘物之间，并在220℃和110MPa的条件下热压缩5秒以制备样品。用HIOKI HI-检测仪（HIOKI Co.,Ltd）通过施加1mA的电流测量样品的电阻。
2．可靠性测试后的连接电阻：将制备的样品置于高温和高湿（85℃/85%RH）条件下500小时，并用HIOKI HI-检测仪（HIOKI Co.,Ltd）通过施加1mA的电流测量样品的连接电阻。
表4
Figure BDA00002622789400164
从表4可看出根据本发明的导电微球和包含该导电微球的各向异性导电膜在初始连接电阻和可靠性测试后连接电阻方面呈现出良好的电学性质。
实施例3：双层各向异性导电膜的制备
（1）第二导电层的膜的制备
将30重量份的粘结剂（YP50，Kukdo Chemical Co.,Ltd）、32重量份的环氧树脂（RKB4110，Resinous Product Company）、1重量份的偶联剂（KBM403,ShinetsuCo.,Ltd）、27重量份的潜伏性固化剂（HX3941，Asahi Kasei Co.,Ltd）、5重量份的第二导电颗粒（AUEL003,Sekisui,20%K值：1900N/mm2）和100重量份的溶剂PGMEA混合。然后，将制备的混合物涂布在离型膜上，并于70℃在烘箱中干燥以使溶剂挥发，从而制备10μm厚的非导电膜。
（2）第一导电层的膜的制备
将23重量份的粘结剂（YP50，Kukdo Chemical Co.,Ltd）、26重量份的液体环氧树脂（RKB4110，Resinous Product Company）、1重量份的偶联剂（KBM403，Shinetsu Co.,Ltd）、20重量份的潜伏性固化剂（HX3941，Asahi Kasei Co.,Ltd）、30重量份的第一导电颗粒（PNR and Nippon Chemical Industry,20%K值：7000N/mm2）和100重量份的溶剂PGMEA混合。然后，将制备的混合物涂布在离型膜上，并于70℃在烘箱中干燥以使溶剂挥发，从而制备10μm厚的各向异性导电膜。
（3）双层各向异性导电膜的制备
将制备的第一导电层膜和第二导电层膜在40℃和0.2Mpa的条件下通过层压工艺彼此粘合，从而制备实施例3的双层各向异性导电膜，其中各向异性导电膜堆叠在非导电膜上。
实施例4：双层各向异性导电膜的制备
除了加入10重量份的量的第二导电颗粒之外，以与实施例3中相同的方式制备双层各向异性导电膜。
实施例5：双层各向异性导电膜的制备
除了加入15重量份的量的第二导电颗粒之外，以与实施例3中相同的方式制备双层各向异性导电膜。
对比例5至8
除了表3中列出的组合物之外，以与实施例3中相同的方式制备双层各向异性导电膜（单位：wt%固含量）。
表5
Figure BDA00002622789400171
Figure BDA00002622789400181
A：粘结剂-苯氧树脂（YP50，Kukdo Chemical Co.,Ltd）
B：环氧树脂（RKB，Resinous Product Company）
C：硅烷偶联剂（KBM403，Shinetsu Co.,Ltd）
D：潜伏性固化剂-咪唑固化剂（HX3941，Asahi Kasei Co.,Ltd）
E：第一导电颗粒（PNR，日本Chemical Industry Inc.）-（20%K值：7000N/mm2)
F：第二导电颗粒（AUEL003，Sekisui）-（20%K值：1900N/mm2）
通过以下方法评估实施例3至5和对比例5至8制备的组合物和膜关于ACF粘度、ACF涂布状态、第一导电颗粒/第二导电颗粒的分散度、预压缩温度、颗粒的粘合后电阻和粘合后可见性。结果示于表6中。
<物理性质的评估>
1．ACF粘度：用Brookfield粘度计的第6号轴在25℃以60rpm测量干燥前ACF的组合物粘度。
2．ACF涂布状态：用裸眼通过目测观察涂布时ACF上的条纹、结节、污点、压痕、划痕等。涂布后，将各向异性导电膜保持于1微米或更小的厚度变化和1mm或更小的基于面积的直径。
3．ACF中第一导电颗粒/第二导电颗粒的分散度：在双层各向异性导电膜上涂布后，在显微镜上直接计数第一导电颗粒数和第二导电颗粒数，并由以下等式计算分散度。
分散度=（第二导电颗粒数/第一导电颗粒数）×100
4．预压缩温度：用裸眼通过目测确定当压缩AFC后基膜剥离时AFC是否适当地粘附于面板同时测量ACF的温度。表2显示了ACF适当地粘附于面板时的预压缩温度。当ACF由于低粘合从面板分离时，升高预压缩温度直至ACF与面板保持粘附状态。
5．粘合后电阻：将实施例和对比例中制备的每个各向异性导电膜在25℃放置1小时，然后用50μm间距的OLB（外引线接合）TEG（测试式元件组）和ITO玻璃基板、COF（覆晶薄膜）和TCP（带载封装）评估粘合后电阻。在50℃和1MPa的条件下预压缩OLB电路端子上的各向异性导电膜1秒后，去除离型膜。然后，在180℃和3MPa的条件下各向异性导电膜受到关于COF电路端子的主压缩5秒。制备每个样品的7个样本，并通过四探针法（根据ASTM F43-64T）用于测量连接电阻。
6．颗粒的粘合后可见性：粘合后，在输入/输出端子的窗口打开（windowsopen），使用光学显微镜（Olympus Co.,Ltd）确定隆起焊盘上的颗粒破损。当颗粒不透明时，确定颗粒呈现差的可见性，而当颗粒透明时，确定颗粒呈现良好的可见性。良好可见性的一个实例示于图6（实施例4），而差可见性的一个实例示于图7（对比例8）。
表6
Figure BDA00002622789400191
从表6可看出根据本发明的各向异性导电膜在可见性、粘性、分散和流动性方面具有改善的物理性状，并且还允许低温预压缩。此外，根据本发明的各向异性导电膜具有低的预压缩温度，从而提供优异的粘合和电学性质包括连接电阻和绝缘电阻。
虽然结合附图已经提供了一些实施方式，但是对本领域技术人员显而易见的是，这些实施方式仅以说明的方式提供，在不背离本发明的精神和范围的情况下可做出各种修改、改变、替换和等效的实施方式。本发明的范围应仅由所附的权利要求书和及其等效形式所限制。

Claims (21)

1.一种由各向异性导电膜连接的半导体装置，其中，所述各向异性导电膜包括含第一导电颗粒的第一导电层，所述第一导电颗粒包括含二氧化硅或二氧化硅复合物的核并具有7,000N/mm2至12,000N/mm2范围内的20%K值。
2.如权利要求1所述的由各向异性导电膜连接的半导体装置，其中，在220℃和110Mpa的条件下热压缩所述各向异性导电膜5秒时，所述第一导电颗粒具有5%至40%范围内的压缩应变。
3.如权利要求1所述的由各向异性导电膜连接的半导体装置，其中，所述二氧化硅复合物包括聚合物树脂和二氧化硅，所述聚合物树脂为选自由可交联聚合的单体和单官能单体的组中的至少一种单体的聚合物。
4.如权利要求3所述的由各向异性导电膜连接的半导体装置，其中，所述聚合物树脂包括所述可交联聚合的单体，所述可交联聚合的单体包括选自由苯乙烯单体、烯丙基化合物单体和丙烯酸酯单体的组中的至少一种。
5.如权利要求3所述的由各向异性导电膜连接的半导体装置，其中，所述聚合物树脂包括所述单官能单体，所述单官能单体包括选自由乙烯基苯单体、(甲基)丙烯酸酯单体、氯乙烯、乙酸乙烯酯、乙烯醚、丙酸乙烯酯和丁酸乙烯酯组成的组中的至少一种。
6.如权利要求3所述的由各向异性导电膜连接的半导体装置，其中，基于所述二氧化硅复合物的总量，所述二氧化硅复合物包括15wt%至90wt%的二氧化硅。
7.如权利要求1所述的由各向异性导电膜连接的半导体装置，其中，所述第一导电颗粒具有0.1μm至200μm的平均粒径。
8.如权利要求1所述的由各向异性导电膜连接的半导体装置，进一步包括：在所述核上形成的导电壳。
9.如权利要求1所述的由各向异性导电膜连接的半导体装置，进一步包括：在所述第一导电颗粒表面形成的突起。
10.如权利要求1所述的由各向异性导电膜连接的半导体装置，其中，所述第一导电层进一步包括具有不同于所述第一导电颗粒且在3,000N/mm2至7,000N/mm2范围内的20%K值的第二导电颗粒，所述第一导电颗粒和所述第二导电颗粒间的20%K值之差小于5,000N/mm2。
11.如权利要求10所述的由各向异性导电膜连接的半导体装置，其中，所述第二导电颗粒具有包含聚合物树脂的核。
12.如权利要求10所述的由各向异性导电膜连接的半导体装置，其中，所述第一导电颗粒在所述第一导电颗粒的每μm2表面积上具有10至40个突起。
13.如权利要求10所述的由各向异性导电膜连接的半导体装置，其中，所述第二导电颗粒在所述第二导电颗粒的每μm2表面积上具有0至10个突起。
14.如权利要求10所述的由各向异性导电膜连接的半导体装置，其中，基于100重量份总的导电颗粒，所述第二导电颗粒以1至30重量份的量存在。
15.如权利要求1所述的由各向异性导电膜连接的半导体装置，进一步包括：在所述第一导电层上形成并包括第二导电颗粒的第二导电层，所述第一导电颗粒具有高于所述第二导电颗粒的硬度。
16.如权利要求15所述的由各向异性导电膜连接的半导体装置，其中，所述第一导电颗粒和所述第二导电颗粒间的20%K值之差为5,000N/mm2或更大。
17.如权利要求1所述的由各向异性导电膜连接的半导体装置，进一步包括：在所述第一导电层上形成并包括第二导电颗粒的第二导电层，所述第一导电颗粒具有大于所述第二导电颗粒的表面粗糙度。
18.一种半导体装置，包括：
布线基板，所述布线基板具有设置于所述布线基板最外层的金属和金属氧化物层；
各向异性导电膜，所述各向异性导电膜粘附于所述布线基板的芯片安装表面；和
半导体芯片，所述半导体芯片安装在所述各向异性导电膜上，
其中所述各向异性导电膜直接连接所述金属和金属氧化物层，并包括含第一导电颗粒的第一导电层，且
其中所述第一导电颗粒具有7,000N/mm2至12,000N/mm2的20%K值，并在220℃和110Mpa的条件下热压缩所述各向异性导电膜5秒时具有5%至40%的压缩应变。
19.如权利要求18所述的半导体装置，其中，所述第一导电层进一步包括：具有低于所述第一导电颗粒的20%K值的第二导电颗粒。
20.如权利要求18所述的半导体装置，其中，所述各向异性导电膜进一步包括在所述第一导电层上形成并包括具有低于所述第一导电颗粒的20%K值的第二导电颗粒的第二导电层。
21.如权利要求18所述的半导体装置，其中，所述第一导电颗粒包括在所述第一导电颗粒表面形成的突起。
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