TWI543435B - 主動式功率分配器 - Google Patents
主動式功率分配器 Download PDFInfo
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- TWI543435B TWI543435B TW099111395A TW99111395A TWI543435B TW I543435 B TWI543435 B TW I543435B TW 099111395 A TW099111395 A TW 099111395A TW 99111395 A TW99111395 A TW 99111395A TW I543435 B TWI543435 B TW I543435B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
- H01Q15/242—Polarisation converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
- H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/36—Networks for connecting several sources or loads, working on the same frequency band, to a common load or source
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Description
本發明提供一種主動式功率分配的系統與方法。特定而言,本發明提供一種根據主動式功率分配器的系統、方法與裝置的電路拓樸,其可允許使用負回授,因此可改善穩定性與線性度,而不會實質地增加該系統之雜訊值(noise figure)。
概言之,功率分配器為被動式裝置。一功率分配器可包括一輸入信號,且概略可包括兩個或兩個以上的輸出信號。但是,使用一習用的功率分配器,每個輸出信號在功率上比該輸入信號低大約3 dB。同時,一些功率分配器裝置之雜訊特性對於一些高頻應用而言不符要求。
因此,存在著對在每個輸出信號中相較於該輸入信號可允許中性或增加的功率之一種電路拓樸的需要。同時,存在著對可改善穩定性與線性度,而不會實質上增加該系統之雜訊值的一種電路拓樸之需要。
在一示例性具體實施例中,揭示一種主動式功率分配方法,其中包括耦合複數個三終端裝置。在此示例性具體實施例中,該複數個三終端裝置包含下列中至少一項:(1)一共通射極級-共通集極級拓樸,及(2)一共通源極級-共通汲極級拓樸。
在一示例性具體實施例中,一主動式功率分配器系統包括一主動式功率分配器輸入;一第一主動式功率分配器輸出;一第二主動式功率分配器輸出;及複數場效電晶體。在一示例性具體實施例中,該複數場效電晶體包括一共通源極級-共通汲極級拓樸。在此示例性具體實施例中,該共通源極級關聯於該主動式功率分配器輸入。在此示例性具體實施例中,該共通汲極級關聯於該第一與第二主動式功率分配器輸出。
在一示例性具體實施例中,一主動式功率分配器系統包括一主動式功率分配器輸入;一第一主動式功率分配器輸出;一第二主動式功率分配器輸出;及複數個三終端裝置。在此示例性具體實施例中,該複數個三終端裝置包含下列中至少一項:(1)一共通射極級-共通集極級拓樸,其中該共通射極級關聯於該主動式功率分配器輸入,且其中該共通集極級關聯於該第一與第二主動式功率分配器輸出,及(2)一共通源極級-共通汲極級拓樸,其中該共通源極級關聯於該主動式功率分配器輸入,且其中該共通汲極級關聯於該第一與第二主動式功率分配器輸出。
此處所述之示例性具體實施例以充份的細節使得熟知本技藝人士可實施本發明,應瞭解在不背離本發明之精神與範圍之下可實現其它具體實施例,並可進行邏輯材料、電性與機械性改變。因此,以下的實施方式僅為了例示之目的而呈現。
請參照圖1A,提供一種示例性主動式功率分配器100,其包含使用雙極性電晶體的一疊接(共通射極-共通基極)拓樸(或使用場效電晶體的一共通源極-共通閘極拓樸)。此拓樸會造成一系統於該共通射極級處易受負回授之影響(即在當使用場效電晶體時於該共通源極狀態的源極處)。使用圖1A之拓樸,會體驗到雜訊值的降低。此雜訊值的降低係由於自第二通道裝置進入該第一通道之增加的射入(injection),例如由第二通道裝置Q3到第一通道裝置Q1,及/或由第二通道裝置Q4到第一通道裝置Q2,反之亦然。同時,由於佈線寄生,少量的寄生回授電感及電阻將出現於圖1A的電路拓樸中。此寄生電感與電阻會降低電路效能,例如雜訊值。
利用圖1A之系統,請參照圖1B與1C,提供圖1A所示之系統的雜訊值與輸出P1dB壓縮點之圖形(一線性度的度量係定義成當功率增益降低(或被壓縮)1 dB時所達到的輸出功率。在此具體實施例中,小信號增益被設計成大約5 dB。於15.7 GHz時獲得的雜訊值約5.1 dB,OP1dB約-6 dBm。圖1D所示之雜訊值隨著位在圖1A所示之系統的共通射極級之輸入電晶體之射極處的回授電感而增加。請注意該雜訊值已經由0 pH處的5 dB增加為在30 pH處的大於10 dB。請重新參照圖1A,30 pH的電感概略將會出現在多種系統之實際實體實作與拓樸當中。例如,用於耦合元件於一直流(DC,“direct current”)電流槽之帶線(stripline)將概略射入(inject)大約20 pH的電感。
在一示例性具體實施例中並參照圖2,提供一種主動式功率分配器示意圖。在一示例性具體實施例中,系統200包含一共通射極-共通集極拓樸。系統200之拓樸由於共通射極與共通集極級之組合而被指定共通射極-共通集極拓樸。此處所述之該等拓樸的一種好處為降低雜訊值,其將在以下進一步說明。在一示例性具體實施例中,如以下之進一步說明,系統200利用耦合至該共通射極級的負回授,以降低增益,而不會犧牲雜訊值。此處所述之該等拓樸的另一種好處為改善傳送器、接收器與收發器,例如利用所提供的主動式功率分配器拓樸之相位陣列(傳送器、接收器與收發器)之線性度,其將在以下進一步說明。
圖2為示例性主動式功率分配器200之示意圖。在一示例性具體實施例中,主動式功率分配器200包含差動輸入子電路210、第一差動輸出子電路220與第二差動輸出子電路230。
差動輸入子電路210包括具有一共通射極節點的成對電晶體211、212。此共通射極節點為固定電流偏壓,其一般位於差動放大器內。在一示例性具體實施例中,於(1)固定電流信號以及(2)與該固定電流信號呈180度反相之部份的一中點處產生一虛擬接地。在一示例性具體實施例中,一輸入信號被傳遞到差動輸入子電路210中成對的電晶體211、212之基極。在一示例性具體實施例中,第一與第二差動輸出子電路220、230皆包含具有一共通基極節點的一對電晶體,且每個共通基極連接至接地端。
在一示例性具體實施例中,第一與第二差動輸出子電路220、230皆包含具有一共通集極級的一對三終端裝置(例如分別為電晶體221、222與電晶體231、232)。例如在一示例性具體實施例中,第一差動輸出子電路220包含一對電晶體,例如電晶體221與電晶體222。在一示例性具體實施例中,電晶體221與222為雙極接面電晶體(BJT,“Bipolar Junction Transistor”)。在另一示例性具體實施例中,電晶體221與222為場效電晶體(FET,“Field Effect Transistor”)。在此示例性具體實施例中,第二差動輸出子電路230包含一對電晶體,例如電晶體231與電晶體232。在一示例性具體實施例中,電晶體231與232為BJT。在另一示例性具體實施例中,電晶體231與232為FET。在一示例性具體實施例中,該共通集極被結合於至少一偏壓網路。在一示例性具體實施例中,電晶體221、222、231與232之每一射極分別連接至一電流槽裝置241、243、242與244。
在一示例性具體實施例中,一電流槽裝置可由通過其中的電流與所穿過的電壓相互獨立的一電路元件提供,其在電路理論中一般稱之為一理想電流源或理想電流元件。在一示例性具體實施例中,電晶體實務上可做為電流源及/或電流槽(源與槽可互換地使用)。在一示例性具體實施例中,該DC電流的確會改變電壓,但僅輕微改變,因此該元件並非理想性。例如,該(非理想性)電流元件可為一三終端裝置,例如BJT、FET、異質接面雙極性電晶體(HBT,“Heterojunction Bipolar Transistor”)、擬態高速移動電子電晶體(pHEMT,“Pseudomorphic High Electron Mobility Transistor”)及/或具有基極維持在固定電壓的金屬氧化物半導體場效電晶體(MOSFET,“Metal-Oxide-Semiconductor Field-Effect Transistor”)。電流槽裝置241、243、242與244用於分別建立輸出電晶體221、222、231、232中固定的偏壓電流。在一示例性具體實施例中,電晶體221、222、231與232之該等射極分別連接至電流槽裝置241、243、242與244之該等集極。在一示例性具體實施例中,電流槽裝置241、243、242與244之該等射極被結合於接地。
在一示例性具體實施例中並重新參照圖2,第一差動輸出子電路220將第一電晶體221的基極連接至輸入子電路電晶體211之集極。第二輸出子電路電晶體222的基極連接至另一輸入子電路電晶體212之集極。在該示例性具體實施例中,該第一輸出自該第一差動輸出子電路的電晶體221射極與電晶體222射極排出(例如通道1 220)。再者,第二差動輸出子電路230為類似地連接,除了第二差動輸出子電路230將第一電晶體231之基極連接至輸入子電路電晶體211的集極以外。第二輸出子電路電晶體232的基極連接至另一輸入子電路電晶體212的集極。在該示例性具體實施例中,該第二輸出自第二差動輸出子電路230的電晶體231的射極與電晶體232的射極排出。在一示例性具體實施例中,電晶體221的基極與電晶體231的基極共用一共通節點。同樣地,電晶體222的基極與電晶體232的基極共用一共通節點。
對照關聯於圖1A的拓樸,在一示例性具體實施例中並重新參照圖2,通道1電晶體射極,例如電晶體221射極與電晶體222射極並未連接至通道2電晶體射極,例如電晶體231射極與電晶體232射極。因此,通道1 220與通道2 230電晶體之該等射極為電性隔離。經過對照並重新參照圖1A,通道1電晶體121射極與通道2電晶體131射極經由位在電晶體112之集極處的一共通節點而彼此耦合。同樣地,通道1電晶體122射極與通道2電晶體132射極經由位在電晶體111之集極處一共通節點而彼此耦合。請重新參照圖2,兩個輸出差動輸出電晶體配對221、222與231、232之間唯一的連接係透過電晶體211與212之射極之間的連接。在一示例性具體實施例中,於電晶體211與212之射極處的虛擬短路防止該第一輸出電路中的電晶體射入雜訊到該第二輸出電路中的該等電晶體當中。同樣地,電晶體211與212之射極處的該虛擬短路防止在該第二輸出電路中的電晶體射入雜訊到該第一輸出電路中的該等電晶體當中。
在一示例性具體實施例中並重新參照圖3,第一差動輸出子電路320具有第一電晶體321,其閘極連接至輸入子電路電晶體311中之一者的汲極。第二輸出子電路電晶體322閘極連接至另一輸入子電路電晶體312之汲極。在該示例性具體實施例中,該第一輸出自第一差動輸出子電路320電晶體321源極與電晶體322源極終端排出。再者,第二差動輸出子電路330被類似地連接,除了第二差動輸出子電路330將第一電晶體331閘極連接至輸入子電路電晶體311之汲極。第二輸出子電路電晶體322閘極連接至另一輸入子電路電晶體312之汲極。在該示例性具體實施例中,該第二輸出(例如通道2330)自第二差動輸出電晶體331源極與電晶體332源極終端排出。
在一示例性具體實施例中,第一電流槽裝置341耦合至能夠儲存能量的一裝置,例如第一電感器351及/或第二電感器352。在此示例性具體實施例中,電晶體321的源極耦合於電感器351。依此,電感器351接著耦合至電流槽裝置341之汲極。在此示例性具體實施例中,電晶體322的源極耦合至電感器352。然後電感器352耦合至電流槽裝置341之汲極。在此示例性具體實施例中,第二電流槽裝置342耦合至能夠儲存能量的一裝置,例如第三電感器353與第四電感器354。在此示例性具體實施例中,電晶體331的源極耦合至電感器354。然後電感器354耦合至電流槽裝置342的汲極。在此示例性具體實施例中,電晶體332的源極耦合至電感器353。依此,電感器353接著耦合至電流槽裝置342之汲極。電流槽裝置353、354之每一源極可連接至接地端。
該電流槽裝置可射入雜訊到該系統當中。能夠儲存能量的裝置,例如電感器351、352、353及354可設置成降低由該電流槽裝置所射入的雜訊。因為出現在電晶體321與322之源極處的該信號實質上呈現180°反相,一虛擬短路出現在電流槽裝置341之汲極處。因此該虛擬短路降低由電流槽裝置341所產生的任何雜訊。同樣地,因為出現在電晶體331與332之該源極處的信號實質上呈現180°反相,一虛擬短路出現在電流槽裝置342之汲極處。因此該虛擬短路降低由電流槽裝置342所產生的任何雜訊。只要電感器351、352為相等數值、或同樣地電感器353,354為相等數值,可選擇任何適當的電感量來降低由該電流槽裝置所射入的雜訊。例如,電路設計者可使用10 pH與1 uH之間被其認為適用於該應用之頻率。
此系統可用於以任何整數的N個通道分配或區分輸入信號。雖然在圖式中僅描繪兩個通道,應瞭解該觀念可擴充到N個整數通道。在一示例性具體實施例中,一主動式功率分配器佈線及/或拓樸設置成具有實質上對稱的輸出通道。該系統只要有可能即設置成對稱。同樣地,因為此觀念可擴充到N個整數通道,應瞭解該N整數通道系統只要有可能即設置成對稱。
請參照圖2與3,目前所描述的該主動式功率分配器已經設置成使得該輸出與彼此及/或與該輸入大致同相位。相反地,根據另一示例性具體實施例,電晶體231、232射極可被交換,造成該第一輸出與該第二輸出彼此大致呈現180°反相。概言之,通過該功率分配器之該輸出信號之絕對相位偏移並不如該第一與第二輸出信號之間的相對相位來得重要。
在一示例性具體實施例中,主動式功率分配器200轉換一輸入RF信號成為兩個輸出信號。該輸出信號位準在振幅上可以相等,雖然其並非必要。對於一先前技術的被動式功率分配器,每個輸出信號在功率上比該輸入信號大約低3 dB。相反地,一示例性主動式分配器,例如主動式功率分配器200、300可提供增益,以及該輸入信號與該輸出信號之間的相對功率位準可以進行調整,並可被選擇性地設計。在一示例性具體實施例中,該輸出信號設置成可達到在該輸入信號之上的實質中性或正功率增益。例如,該輸出信號可達到在該輸入信號之上的3 dB信號功率增益。在一示例性具體實施例中,該輸出信號可以達到的功率增益範圍在0 dB到5 dB。再者,該輸出信號可設置成達到任何適當的功率增益。
在另一示例性具體實施例中,主動式功率分配器200、300額外地於該輸入與輸出埠處提供匹配的阻抗。該匹配的阻抗可為50歐姆、75歐姆或其它適當的阻抗。再者,在一示例性具體實施例中,主動式功率分配器200、300提供該主動式功率分配器之該等輸出埠之間的絕緣。在一示例性具體實施例中,主動式功率分配器200、300可製造成一單晶微波積體電路(MMIC,“Monolithic microwave integrated circuit”)。在一示例性具體實施例中,主動式功率分配器200、300係製造成一小型的射頻積體電路(RFIC,“Radio frequency integrated circuit”),其由於缺少分散的組件而無關於該操作頻率。
根據一示例性具體實施例,主動式功率分配器200可包含以一種單片式解決方案製造在矽鍺(SiGe)上的主動式組件。可使用其它材料,例如砷化鎵、矽晶、或其它已知或在之後設計出的適當材料。使用主動式組件的一單片式矽鍺具體實施例可產生優於先前技術中分散式網路的某些好處。在一示例性具體實施例中,RF信號會經歷一中性或輕微正功率增益,而不會有在被動式先前技術系統中發生的功率損耗。再者,一些具體實施例在當該等RF信號為類比形式時,利用差動發信來改善信號隔離、干擾抑制與雜訊抗擾性,加上可約束電磁場。
對照於前述之圖1B至1D並參照圖4,提供一示例性具體實施例雜訊值。在一示例性具體實施例中,提供該雜訊值dB相對於回授電感(單位為pH)。該雜訊值為高度線性,並在該電感範圍之上具有一操作上令人滿意的小變化(單位為dB)。例如,在0到100 pH範圍內雜訊值的改變小於約0.25 dB。同時,在一示例性頻率為15.7 GHz之情況下,一主動式功率分配器之示例性具體實施例的雜訊值可相對地固定在4.173 dB,相較於0 pH時約4.35 dB,於100 pH時約4.3 dB。
在一示例性具體實施例中,主動式功率分配器200、300具有寬的操作頻寬,例如(在1-250 GHz之間),並可設置為在多種頻帶之上寬頻致能的操作。換言之,在一示例性具體實施例中,主動式功率分配器200、300可應用到所有頻帶,包括X、K、Ku、Ka及Q頻帶。在一示例性具體實施例中,主動式功率分配器200、300可在特定頻率範圍之上操作,例如2-20 GHz、20-40 GHz、30-45 GHz或其它適當範圍。
在一示例性具體實施例中,該主動式功率分配器製造成一RFIC或MMIC。在一示例性具體實施例中,該主動式功率分配器的雜訊值對於由0到100 pH之負回授電感,具有小於0.25 dB變化的增益。在一示例性具體實施例中,該等電流槽裝置為三終端裝置。在此示例性具體實施例中,該三終端電流槽裝置之基極與閘極中至少一者被保持在固定電壓或電流。在一示例性具體實施例中,該虛擬接地於被區分成具有180度反相分離(180 degree out of phase separation)的兩個信號之一交流電源的中點處產生。
此外,參照於FET(場效電晶體),但是,熟知本技藝人士應可瞭解與體會到多種其它電晶體皆可適當地用於本發明中,例如雙極接面電晶體(BJT)、MOSFET、金屬半導體場效電晶體(MESFET,“metal-semiconductor field-effect transistor”)、二極體、HEMT(高速移動電子電晶體,“high electron mobility transistor”)及/或異質接面雙極性電晶體(HBT)。同樣地,參照於該FET的源極、汲極與閘極,但是,熟知本技藝人士應可瞭解與體會到可進行多種其它參照來取代源極、汲極與閘極(例如射極、集極與基極,或是一輸入與一輸出)。此外,實體上一源極可操作成一汲極,而一相關的汲極可操作成一源極。
以下的申請案皆關於本發明標的:美國專利申請編號12/759,123,名為「主動式巴特勒與布拉斯矩陣」(ACTIVE BUTLER AND BLASS MATRICES),其係與本申請案同時立案;美國專利申請編號12/759,043,名為「天線系統的主動式混合電路」(ACTIVE HYBRIDS FOR ANTENNA SYSTEMS),其係與本申請案同時立案;美國專利申請編號12/759,064,名為「主動前饋放大器」(ACTIVE FEED FORWARD AMPLIFIER),其係與本申請案同時立案;美國專利申請編號12/759,130,名為「主動式相位陣列架構」(ACTIVE PHASED ARRAY ARCHITECTURE),其係與本申請案同時立案(;美國專利申請編號12/759,059,名為「多波束主動式相位陣列架構」(MULTI-BEAM ACTIVE PHASED ARRAY ARCHITECTURE),其係與本申請案同時立案;美國專利申請編號12/758,996,名為「預選器放大器」(PRESELECTOR AMPLIFIER),其係與本申請案
同時立案;美國專利申請編號12/759,112,名為「半雙工相位陣列天線系統」(HALF-DUPLEX PHASED ARRAY ANTENNA SYSTEM),其係與本申請案同時立案;美國專利申請編號12/759,113,名為「主動式向量產生器之數位振幅控制」(DIGITAL AMPLITUDE CONTROL OF ACTIVE VECTOR GENERATOR),其係與本申請案同時立案;其內容皆在此完整參照任何用途來加以合併。
優點、其它好處與對問題之解決方案已在以上參照特定具體實施例加以說明。但是,可產生任何優點、好處或即將發生或可成為更明確的解決方案之任何優點、好處或解決方案及任何元件皆不應視為任何或所有申請專利範圍之關鍵、必須或基本特徵或元件。如此處所使用者,該等術語「包括」(「includes」,「including」),「包含」(「comprises」,「comprising」)或其任何其它變化皆係要涵蓋非排他性包含,使得包含一元件清單之程序、方法、物件或設備不僅包括那些元件,而可包括未明確列出或隱含於這些程序、方法、物件或設備中的其它元件。另外,此處所述之元件皆非實施本發明之必要元件,除非另以「基本」或「關鍵」之詞做明確描述。
100...主動式功率分配器
111...電晶體
112...電晶體
121...通道1電晶體
122...通道1電晶體
131...通道2電晶體
132...通道2電晶體
200...系統、主動式功率分配器
210...差動輸入子電路
211,212...電晶體、輸入子電路電晶體
220...第一差動輸出子電路、通道1
230...第二差動輸出子電路、通道2
221,222,231,232...電晶體/輸出電晶體
241,242,243,244...電流槽裝置
300...主動式功率分配器
311...輸入子電路電晶體
312...輸入子電路電晶體
320...第一差動輸出子電路
321...第一電晶體
322...第二輸出子電路電晶體
330...第二差動輸出子電路、通道2
331...第一電晶體
331...第二差動輸出電晶體
332...第二輸出子電路電晶體
341...第一電流槽裝置
342...第二電流槽裝置
351...第一電感器
352...第二電感器
353...第三電感器
354...第四電感器
Q1...第一通道裝置
Q2...第一通道裝置
Q3...第二通道裝置
Q4...第二通道裝置
若要對本發明有較完整的理解,可參考實施方式與申請專利範圍並配合參考附屬圖式,其中類似參考編號代表所有圖式中的類似元件,且:
圖1A為一主動式功率分配器之示例性具體實施例;
圖1B為關聯於圖1A之具體實施例的一示例性雜訊值;
圖1C為關聯於圖1A之具體實施例的一示例性輸出P1dB壓縮點;
圖1D為關聯於圖1A之具體實施例之一示例性雜訊值(單位為dB)相對於回授電感(pH);
圖2為包含一共通射極-共通集極拓樸的另一主動式功率分配器之示例性具體實施例;
圖3為包含具有耦合至該等電流槽裝置之電感器的一共通源極-共通汲極拓樸的又另一主動式功率分配器的示例性具體實施例;及
圖4為關聯於包含一共通射極-共通集極拓樸的一主動式功率分配器之示例性具體實施例的一示例性雜訊值。
100...主動式功率分配器
111...電晶體
112...電晶體
121...通道1電晶體
122...通道1電晶體
131...通道2電晶體
132...通道2電晶體
Claims (19)
- 一種主動式功率分配器系統,其包含:一主動式功率分配器差動輸入;一第一主動式功率分配器差動輸出;一第二主動式功率分配器差動輸出;及複數個三終端裝置;其中該複數個三終端裝置包含下列之其中一項:一共通射極級-共通集極級拓樸,其中該共通射極級與該主動式功率分配器差動輸入通信,且其中該共通集極級提供一第一差動輸出信號至該第一主動功率分配器差動輸出,以及其中該共通集極級提供一第二差動輸出信號至該第二主動功率分配器差動輸出,及一共通源極級-共通汲極級拓樸,其中該共通源極級與該主動式功率分配器差動輸入通信,且其中該共通汲極級提供該第一差動輸出信號至該第一主動功率分配器差動輸出,以及其中該共通汲極級提供該第二差動輸出信號至該第二主動功率分配器差動輸出。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該複數個三終端裝置包含BJT、FET、HBT、pHEMT及MOSFET中至少一者。
- 如申請專利範圍第1項之主動式功率分配器系統,另包含耦合至該共通射極級的一差動輸入虛擬接地。
- 如申請專利範圍第1項之主動式功率分配器系統,另包含一電流槽裝置,其於該共通集極級與該共通汲極級中至少一者處被偏壓。
- 如申請專利範圍第4項之主動式功率分配器系統,另包含一耦合至該電流槽裝置之電感器。
- 如申請專利範圍第1項之主動式功率分配器系統,另包含:一第一通道共通集極級與一第二通道共通集極級中之一者,其中該第一通道共通集極級包含複數個三終端裝置,且其中該第二通道共通集極級包含複數個三終端裝置,及一第一通道共通汲極級與一第二通道共通汲極級,其中該第一通道共通汲極級包含複數個三終端裝置,且其中該第二通道共通汲極級包含複數個三終端裝置。
- 如申請專利範圍第6項之主動式功率分配器系統,其中下列至少一項:該第一通道共通集極級三終端裝置射極終端並未耦合至該第二通道共通集極級三終端裝置射極終端,及該第一通道共通汲極級三終端裝置源極終端並未耦合至該第二通道共通汲極級三終端裝置源極終端。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器之雜訊值設置成小於約4.2dB。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器的一輸出P1dB壓縮點設置成小於約3.2dBm。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器設置成包含複數實質上對稱的輸出通道。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器設置成包含小於5dB的雜訊值。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器設置成在約1與約250GHz之間的頻率以及20GHz的頻寬之上操作。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器設置成提供增益。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器設置成於一輸入信號與輸出信號之間提供可調整的相對功率。
- 如申請專利範圍第1項之主動式功率分配器系統,其中一主動式功率分配器差動輸出信號設置成可達到於一輸入信號之上的一實質中性功率增益或一輸入信號 之上的一正功率增益中至少一者。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器設置成於該主動式功率分配器之輸出埠之間提供隔離。
- 如申請專利範圍第1項之主動式功率分配器系統,其中該主動式功率分配器之複數輸出信號之間一差動相位實質上為零。
- 一種主動式功率分配器方法,其包含:耦合複數個三終端裝置;其中該複數個三終端裝置包含下列中至少一項:一共通射極級-共通集極級拓樸,其中該共通射極級與一主動式功率分配器差動輸入通信,且其中該共通集極級包含一第一主動功率分配器差動輸出及一第二主動功率分配器差動輸出,二者皆位於該共通集極級,及一共通源極級-共通汲極級拓樸,其中該共通源極級與一主動式功率分配器差動輸入通信,且其中該共通汲極級包含一第一主動功率分配器差動輸出及一第二主動功率分配器差動輸出,二者皆位於該共通汲極級。
- 一種主動式功率分配器系統,其包含:一主動式功率分配器差動輸入;一第一主動式功率分配器差動輸出;一第二主動式功率分配器差動輸出;及複數場效電晶體,其包含: 一共通源極級-共通汲極級拓樸,其中該共通源極級與該主動式功率分配器差動輸入通信,且其中該共通汲極級提供一第一差動輸出信號至該第一主動功率分配器差動輸出,以及其中該共通汲極級提供一第二差動輸出信號至該第二主動功率分配器差動輸出;其中該第一主動功率分配器差動輸出位於該共通汲極級的一第一輸出,以及其中該第二主動功率分配器差動輸出位於該共通汲極級的一第二輸出。
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