TWI543247B - 除氣腔室用之石英視窗 - Google Patents

除氣腔室用之石英視窗 Download PDF

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TWI543247B
TWI543247B TW099136750A TW99136750A TWI543247B TW I543247 B TWI543247 B TW I543247B TW 099136750 A TW099136750 A TW 099136750A TW 99136750 A TW99136750 A TW 99136750A TW I543247 B TWI543247 B TW I543247B
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傑生 奧古斯堤諾
提姆 哈特
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蘭姆研究公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8158—With indicator, register, recorder, alarm or inspection means
    • Y10T137/8359—Inspection means

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  • General Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Optics & Photonics (AREA)
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Description

除氣腔室用之石英視窗
本發明係關於一種除氣腔室用之石英視窗，特別是關於一種用以固定於除氣腔室上作為UV穿透視窗的五邊石英視窗。
在半導體基板之電漿處理期間，其中半導體基板被暴露在含鹵素氣體中，處理氣體的殘餘物可殘留在半導體基板的表面上。這些殘餘物可在下游處理步驟中造成半導體基板中之缺陷，且可污染在處理管線中的其它半導體基板。因此，需要在除氣腔室中從半導體基板上移除這些殘餘物。
本發明揭露一種五邊石英視窗，用以固定於除氣腔室上；此石英視窗包含厚度均勻之石英板，且具有下表面、上表面以及在下表面和上表面之間延伸的側壁，其中側壁包含由五個拱形部份互相連接之五個直線部份。
圖1展示例示性除氣腔室100之橫剖面示意圖。除氣腔室100包含腔室壁10，由金屬材料(例如鋁)製成。五邊石英視窗30被複數個夾鉗40、45夾在腔室壁10的頂端。為了較高的UV光透射，石英視窗30較佳是由合成石英製成。合成石英通常是經由熱液作用(hydrothermal process)在壓力鍋中非雙晶化(untwined)並且生成。在石英視窗30和腔室壁10之間的連續五邊形O形環35提供了真空密封。在石英視窗30之上放置UV光源80。使真空泵60經由排氣口與除氣腔室100相連接，其中排氣口可由閘閥65關閉。使氣體源70經由氣體管線與除氣腔室100相連接，其中氣體管線可由另一閘閥75關閉。
圖2為石英視窗30之一實施例的透視圖。石英視窗30為具有約1.1到1.2英吋之均勻厚度的五邊石英板(此處所用之「約」表示±10%)，較佳是約1.15英吋。石英視窗30之上表面301和下表面302係機械拋光，較佳是到達介於1微英吋到5微英吋之Ra值的粗糙度。側壁410在上表面301和下表面302之間延伸。當石英視窗30被固定在除氣腔室100上時，其由嚙合在石英視窗30上表面301上之四個夾持區391-394的四個夾鉗40夾持於腔室壁10。
圖3為五邊石英視窗30之頂視圖。石英視窗30的邊緣由以五個拱形部份(351、353、355、357和359)互相連接之五個直線部份(352、354、356、358和360)來界定。石英視窗30為五邊形，其具有直線底邊部份356；直線下層發散部份354、358(與垂直通過底邊部份356之中間並將視窗分成兩個均等部份之中心線成約18.5°之角度)；直線上層收斂部份352、360(與中心線成約47.2°之角度)；在上層和下層直線部份之間的大半徑拱形部份353、359；在直線底邊部份356與下層直線部份354、358之間的小半徑拱形部份355、357；以及另一個在上層直線部份352、360之間的小半徑拱形部份351。為了簡單化，建立卡氏座標系統(Cartesian coordinate system)以定義這些部份。此處所敘述之所有座標具有±10%之容許誤差且以英吋為單位。卡氏座標的原點在如十字線310所標示之中心點。石英視窗30約對y軸成對稱。石英視窗30沿y軸之長度為約15.2英吋且沿x軸之寬度為約12.6英吋。因此，視窗30係稍微大於直徑300 mm(12英吋)之晶圓。
部份352是座標(-1.58，7.12)和(-4.29，4.62)之間的直線。部份360是座標(1.58，7.12)和(4.29，4.62)之間的直線。部份354是座標(-5.97，-2.00)和(-4.46，-6.53)之間的直線。部份358是座標(5.97，-2.00)和(4.46，-6.53)之間的直線。部份356是座標(-3.15，-7.47)和(3.15，-7.47)之間的直線。拱形部份351與部份352以及部份360相切，且其半徑為約2.32英吋而圓心角(橫跨拱形之兩個半徑間的角度)為約85.7°。拱形部份353與部份352以及部份354相切，其半徑為約6.3英吋而圓心角為約65.7°。拱形部份355與部份354以及部份356相切，其半徑為約1.38英吋而圓心角為約71.5°。拱形部份357與部份356以及部份358相切，其半徑為約1.38英吋而圓心角為約71.5°。拱形部份359與部份358以及部份360相切，其半徑為約6.3英吋而圓心角為約65.7°。
圖4展示石英視窗30之側視圖，其中側壁410在石英視窗30之上表面301和下表面302之間延伸。視窗30較佳是固體石英並且除了側壁中之凹口(用於視窗30的手動或自動搬運)以外不包含任何凸出、凹陷或通道。視窗30較佳是極純的合成石英。
圖5展示沿圖4中之截線A-A的剖面。側壁410具有分別在直線部份352、360、354和358上之四個拱形凹口450A、450B、450C和450D，用以嚙合安裝和拆卸石英視窗30用之起重工具。圖6展示沿圖5中之截線B-B的剖面。每個凹口定義在側壁410中之約1英吋乘約0.5英吋的開口，有平行之上壁和下壁以及半徑為約0.75英吋之彎曲垂直壁，而平行之上壁和下壁之間的高度為約0.5英吋。凹口約位於上表面301與下表面302的中間。凹口450A和450B之拱形中心分別位於座標(-3.74，5.74)和(3.74，5.74)。凹口450C和450D之拱形中心分別位於座標(-5.79，-3.97)和(5.79，-3.97)。凹口之內角為半徑約0.1英吋之圓弧形。凹口之外角具有約0.04英吋寬的45°斜面。
石英視窗30用以固定於除氣腔室100之頂端上，其中使UV光穿透石英視窗30同時使例如臭氧或氧氣之氣體流入除氣腔室100中以移除含鹵素殘餘物(例如來自支托於除氣腔室100中之半導體基板(例如300 mm晶圓)的蝕刻副產物)。石英視窗30大到足以使晶圓上表面之上的氣體被UV光照射，且非圓形的石英視窗30壓在相同形狀的較小開口上，這允許了對內部腔室組件的存取(要不然是無法存取的，如果石英視窗30為圓形且與半導體基板大小差不多的話)。由於周圍壓力計裝置、氣體管線與接鄰腔室組件的存在，石英視窗30的形狀亦使得石英視窗30能夠不用與此等接鄰硬體碰撞而被抬起或降低。
參照圖1，於除氣腔室100中之處理期間，將半導體基板50穿過腔室壁10中之載入門20且放置於複數個基板支撐插腳55上。藉由真空泵60使除氣腔室100排氣，且氣體源70提供臭氧氣體或氧氣到其壓力維持在10毫托耳到10托耳間之真空壓力的除氣腔室100中。UV光源80係以UV光穿過石英視窗30而照向半導體基板50，其中UV光較佳是254 nm波長且強度在0.05到5 W/cm2之間，而照射時間為10秒到1分鐘之間。臭氧氣體或氧氣從UV光吸收UV輻射且分解成可與含鹵素殘餘物反應之氧自由基(原子氧)。此反應產物為氣體且會從除氣腔室100中被排出。
儘管石英視窗已參照其特定實施例詳細描述，熟悉本技藝者應當了解，在不偏離隨附之申請專利範圍的範疇下可做各種變化和修正，以及使用均等物。
10．．．腔室壁
20．．．載入門
30．．．五邊石英視窗
35．．．O形環
40．．．夾鉗
45．．．夾鉗
50．．．半導體基板
55．．．基板支撐插腳
60．．．真空泵
65．．．閘閥
70．．．氣體源
75‧‧‧閘閥
80‧‧‧UV光源
100‧‧‧除氣腔室
301‧‧‧上表面
302‧‧‧下表面
310‧‧‧十字線
351‧‧‧拱形部份
352‧‧‧直線上層收斂部份
353‧‧‧拱形部份
354‧‧‧直線下層發散部份
355‧‧‧拱形部份
356‧‧‧直線底邊部份
357‧‧‧拱形部份
358‧‧‧直線下層發散部份
359‧‧‧拱形部份
360‧‧‧直線上層收斂部份
391‧‧‧夾持區
392‧‧‧夾持區
393‧‧‧夾持區
394‧‧‧夾持區
410‧‧‧側壁
450A/450B/450C/450D‧‧‧拱形凹口
圖1展示除氣腔室之橫剖面示意圖。
圖2展示除氣腔室用之五邊石英視窗的透視圖。
圖3展示圖2之石英視窗的頂視圖。
圖4展示圖2之石英視窗的側視圖。
圖5展示圖2之石英視窗的橫剖面圖。
圖6展示圖2之石英視窗的另一橫剖面圖。
30．．．五邊石英視窗
301．．．上表面
410．．．側壁

Claims (10)

  1. 一種五邊石英視窗，其能被真空密封至一除氣腔室的上方表面，該石英視窗包含厚度均勻之一石英板，該石英板包含：一下表面、一上表面以及在該下表面與該上表面之間延伸的一側壁，其中該側壁包含由五個拱形部份互相連接之五個直線部份；及複數凹口，延伸至該側壁內，該等凹口係位於該上表面與該下表面的中間。
  2. 如申請專利範圍第1項所述之五邊石英視窗，其中該五個直線部份與該五個拱形部份係由一直線底邊部份、兩個直線下層發散部份、兩個直線上層收斂部份、在該上層收斂部份與該下層發散部份之間的兩個大半徑拱形部份、在該底邊部份與該下層發散部份之間的兩個小半徑拱形部份、以及在該上層收斂部份之間的另一個小半徑拱形部份所構成。
  3. 如申請專利範圍第1項所述之五邊石英視窗，其中該五個直線部份與該五個拱形部份包含：一第一拱形部份，具有約2.32英吋之半徑與約85.7°之圓心角；一第二拱形部份，具有約6.3英吋之半徑與約65.7°之圓心角；一第三拱形部份，具有約1.38英吋之半徑與約71.5°之圓心角；一第四拱形部份，具有約1.38英吋之半徑與約71.5°之圓心角；一第五拱形部份，具有約6.3英吋之半徑與約65.7°之圓心角；一第一直線部份，連接該第一與第二拱形部份；一第二直線部份，連接該第二與第三拱形部份；一第三直線部份，連接該第三與第四拱形部份；一第四直線部份，連接該第四與第五拱形部份；一第五直線部份，連接該第五與第一拱形部份；且各該直線部份係與其連接之兩個拱形部份相切。
  4. 如申請專利範圍第1項所述之五邊石英視窗，其中該石英視窗之厚度係約1.15英吋，且該上表面之最大尺寸為約15.2英吋而最小尺寸為約12.6英吋。
  5. 如申請專利範圍第1項所述之五邊石英視窗，其中該上表面與該下表面係拋光表面，具有Ra值介於1到5微英吋的粗糙度。
  6. 如申請專利範圍第2項所述之五邊石英視窗，其中該複數凹口係沿著該收斂和發散部份之該側壁中的四個拱形凹口，其中該拱形凹口各具有平行之上壁和下壁以及此兩者間之一彎曲垂直壁，該彎曲垂直壁具有約0.75英吋之半徑，而該上壁和下壁之間的高度為約0.5英吋。
  7. 如申請專利範圍第1項所述之五邊石英視窗，其中該石英係合成石英。
  8. 一種除氣腔室，包含：一腔室壁；一載入門，一半導體基板能被傳送穿過該載入門進出該除氣腔室；一石英視窗，真空密封於該腔室壁；一UV光源，位於該石英視窗上方；一排氣口，反應產物能經由該排氣口被一真空泵排出；一氣體源，被來自該UV光源的UV照射，該石英視窗包含厚度均勻之一石英板，該石英板包含：一下表面、一上表面以及在該下表面與該上表面之間延伸的一側壁，其中該側壁包含由五個拱形部份互相連接之五個直線部份。
  9. 如申請專利範圍第8項所述之除氣腔室，其中該石英視窗係由複數個夾鉗可卸除式地固定住，且一連續五邊形O形環放置於該石 英視窗與該除氣腔室之上方表面之間以提供真空密封。
  10. 一種半導體基板之處理方法，包含：將一半導體基板放入一除氣腔室中，該除氣腔室包含一石英視窗，該石英視窗係可卸除式地固定於該除氣腔室之上方表面上；將臭氧氣體或氧氣通入該除氣腔室中同時維持該腔室中之真空壓力為10毫托耳到10托耳；藉由以UV光穿過該石英視窗來照射該除氣腔室中之該臭氧氣體或氧氣而產生氧自由基；藉由與該氧自由基的反應來移除該半導體基板上之含鹵素殘餘物。
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8584612B2 (en) * 2009-12-17 2013-11-19 Lam Research Corporation UV lamp assembly of degas chamber having rotary shutters
US8492736B2 (en) 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
US9947512B2 (en) * 2011-10-25 2018-04-17 Lam Research Corporation Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
CN103088288A (zh) * 2011-11-03 2013-05-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片处理设备及其腔室装置
US9721802B2 (en) * 2013-10-03 2017-08-01 Applied Materials, Inc. LED based optical source coupled with plasma source
CN104752260B (zh) * 2013-12-31 2018-05-08 北京北方华创微电子装备有限公司 一种隔离窗固定结构以及腔室
CN104752264B (zh) * 2013-12-31 2018-05-25 北京北方华创微电子装备有限公司 一种隔离窗固定结构以及腔室
US20200216951A1 (en) * 2019-01-04 2020-07-09 Axcelis Technologies, Inc. Reduction of condensed gases on chamber walls via purge gas dilution and evacuation for semiconductor processing equipment
US11629409B2 (en) * 2019-05-28 2023-04-18 Applied Materials, Inc. Inline microwave batch degas chamber
US11348784B2 (en) 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1171261A (en) * 1968-02-16 1969-11-19 Mullard Ltd Improved Ultra-Sonic Delay Line
US3733709A (en) 1971-05-06 1973-05-22 Sun Chemical Corp Reflector and cooling means therefor
US3894343A (en) 1972-06-15 1975-07-15 Thermogenics Of New York Ink curing and drying apparatus
US3819929A (en) 1973-06-08 1974-06-25 Canrad Precision Ind Inc Ultraviolet lamp housing
CH586666A5 (zh) 1973-09-11 1977-04-15 Ciba Geigy Ag
US3967385A (en) 1974-08-26 1976-07-06 National-Standard Company, Wagner-Litho Machinery Division Utilization of heat pipes for cooling radiation curing systems
US4005135A (en) 1975-04-07 1977-01-25 Sun Chemical Corporation Rotatable ultraviolet lamp reflector and heat sink
US4025795A (en) 1975-05-27 1977-05-24 Ppg Industries, Inc. Ultraviolet light processor having rotating shutters
US4015340A (en) 1975-08-20 1977-04-05 Tec Systems, Inc. Ultraviolet drying apparatus
US4055135A (en) * 1976-06-04 1977-10-25 Sperry Rand Corporation Rudder error detector
US4049987A (en) 1976-06-04 1977-09-20 The Perkin-Elmer Corporation Ozone absorbance controller
US4568632A (en) 1982-10-07 1986-02-04 International Business Machines Corporation Patterning of polyimide films with far ultraviolet light
JPS62154736A (ja) 1985-12-27 1987-07-09 Hitachi Ltd ドライエツチング方法
JPH0228322A (ja) 1988-04-28 1990-01-30 Mitsubishi Electric Corp 半導体基板の前処理方法
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
US5262902A (en) 1990-06-28 1993-11-16 Ebara Corporation Filter for a low-pressure mercury vapor lamp
US6012304A (en) 1991-09-30 2000-01-11 Loxley; Ted A. Sintered quartz glass products and methods for making same
JP2511393B2 (ja) 1992-09-15 1996-06-26 パテント−トロイハント−ゲゼルシヤフト フユア エレクトリツシエ グリユーランペン ミツト ベシユレンクテル ハフツング メタルハライドランプ
JP3367167B2 (ja) 1993-10-26 2003-01-14 株式会社ニコン 照明光学装置、該装置に使用される放電ランプ、及び露光装置
US6015503A (en) 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
JPH0864559A (ja) 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US5534107A (en) 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US6355587B1 (en) 1994-06-30 2002-03-12 Ted A. Loxley Quartz glass products and methods for making same
DE59604303D1 (de) 1995-04-27 2000-03-02 Metronic Geraetebau Verfahren und vorrichtung zum härten von uv-druckfarben
KR100363846B1 (ko) 1995-12-23 2003-02-19 주식회사 하이닉스반도체 반도체소자의감광막제거방법
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5788940A (en) 1996-10-23 1998-08-04 Tetra Laval Holdings & Finance Sa Method and apparatus for sterilizing cartons through ultraviolet irradiation
US5922219A (en) 1996-10-31 1999-07-13 Fsi International, Inc. UV/halogen treatment for dry oxide etching
US5920411A (en) * 1997-02-14 1999-07-06 Duck; Gary S. Optical multiplexing/demultiplexing device
US6065481A (en) 1997-03-26 2000-05-23 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced HF etch process performance
US5861633A (en) 1997-08-04 1999-01-19 Con-Trol-Cure, Inc. Irradiator apparatus
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
US6015759A (en) 1997-12-08 2000-01-18 Quester Technology, Inc. Surface modification of semiconductors using electromagnetic radiation
US6187133B1 (en) 1998-05-29 2001-02-13 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry
US6191428B1 (en) 1998-06-30 2001-02-20 Joseph J. Gilberti Ultraviolet shutter
US6228173B1 (en) 1998-10-12 2001-05-08 Tokyo Electron Limited Single-substrate-heat-treating apparatus for semiconductor process system
US6156079A (en) 1998-10-21 2000-12-05 Ho; Henry Window support member for a semiconductor processing system
US6465799B1 (en) 1999-03-01 2002-10-15 Johnson & Johnson Vision Care, Inc. UV radiation system having materials for selectively attenuating radiation
US6254689B1 (en) 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
JP3659863B2 (ja) * 2000-04-06 2005-06-15 大日本スクリーン製造株式会社 熱処理装置
JP4540796B2 (ja) 2000-04-21 2010-09-08 東京エレクトロン株式会社 石英ウインドウ、リフレクタ及び熱処理装置
JP2001354441A (ja) * 2000-06-12 2001-12-25 Nippon Sheet Glass Co Ltd 光学ガラス素子の製造方法、及び該製造方法により製造された光学ガラス素子
JP2002016033A (ja) 2000-06-29 2002-01-18 Tokyo Cathode Laboratory Co Ltd 基板ドライ洗浄装置及び基板ドライ洗浄方法
GR1003634B (el) 2000-10-26 2001-07-30 Pilux & Danpex Ae Παραβολικο φωτιστικο φθορισμου ψευδοροφης και οροφης
US6797966B2 (en) 2001-01-26 2004-09-28 Engineering Dynamics, Ltd. Quick-install irradiation unit and method of making same
US6605149B2 (en) * 2002-01-11 2003-08-12 Hemlock Semiconductor Corporation Method of stacking polycrystalline silicon in process for single crystal production
DE60324625D1 (de) 2002-04-04 2008-12-24 Tosoh Corp Thermisch-gespritzte Quarzglasteile und Herstellungsverfahren
JP4133062B2 (ja) 2002-07-19 2008-08-13 大日本スクリーン製造株式会社 熱処理装置
US6649921B1 (en) 2002-08-19 2003-11-18 Fusion Uv Systems, Inc. Apparatus and method providing substantially two-dimensionally uniform irradiation
US6720566B2 (en) 2002-08-20 2004-04-13 Miltec Corporation Shutter for use with a light source
US6832844B2 (en) 2002-12-03 2004-12-21 Field Controls, L.L.C. Ultraviolet lamp assembly
US7374696B2 (en) 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
US20050268567A1 (en) 2003-07-31 2005-12-08 Mattson Technology, Inc. Wedge-shaped window for providing a pressure differential
US20050268467A1 (en) 2004-06-05 2005-12-08 Jackie Woods-Hunter Plant deleafing tool
US7365037B2 (en) 2004-09-30 2008-04-29 Shin-Etsu Quartz Products Co., Ltd. Quartz glass having excellent resistance against plasma corrosion and method for producing the same
US20060196525A1 (en) 2005-03-03 2006-09-07 Vrtis Raymond N Method for removing a residue from a chamber
US7972441B2 (en) * 2005-04-05 2011-07-05 Applied Materials, Inc. Thermal oxidation of silicon using ozone
US7777198B2 (en) 2005-05-09 2010-08-17 Applied Materials, Inc. Apparatus and method for exposing a substrate to a rotating irradiance pattern of UV radiation
US7692171B2 (en) 2006-03-17 2010-04-06 Andrzei Kaszuba Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors
US7909595B2 (en) 2006-03-17 2011-03-22 Applied Materials, Inc. Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections
US7566891B2 (en) 2006-03-17 2009-07-28 Applied Materials, Inc. Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
JP4994074B2 (ja) 2006-04-20 2012-08-08 東京エレクトロン株式会社 基板洗浄装置，基板洗浄方法，基板処理装置
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
CA2676622C (en) 2006-12-11 2016-02-02 Air Motion Systems, Inc. Uv module
US20090045714A1 (en) 2007-08-13 2009-02-19 Claeys Michael L Uv module shutter extrusion with internal cooling fins
US8584612B2 (en) 2009-12-17 2013-11-19 Lam Research Corporation UV lamp assembly of degas chamber having rotary shutters
US8492736B2 (en) 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates

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