TWI541786B - 顯示裝置 - Google Patents
顯示裝置 Download PDFInfo
- Publication number
- TWI541786B TWI541786B TW100108101A TW100108101A TWI541786B TW I541786 B TWI541786 B TW I541786B TW 100108101 A TW100108101 A TW 100108101A TW 100108101 A TW100108101 A TW 100108101A TW I541786 B TWI541786 B TW I541786B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- electrically connected
- source
- drain
- gate
- Prior art date
Links
- 230000036961 partial effect Effects 0.000 claims description 38
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 117
- 239000004065 semiconductor Substances 0.000 description 42
- 101100392125 Caenorhabditis elegans gck-1 gene Proteins 0.000 description 20
- 238000010586 diagram Methods 0.000 description 20
- 238000005259 measurement Methods 0.000 description 18
- 229910007541 Zn O Inorganic materials 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 230000005693 optoelectronics Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000015654 memory Effects 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 229910052735 hafnium Inorganic materials 0.000 description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical group 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 101100392126 Caenorhabditis elegans gck-3 gene Proteins 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 102100030943 Glutathione S-transferase P Human genes 0.000 description 2
- 101001010139 Homo sapiens Glutathione S-transferase P Proteins 0.000 description 2
- 101100176800 Mus musculus Gstp2 gene Proteins 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- -1 hydrogen compound Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
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- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 201000005569 Gout Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YISOXLVRWFDIKD-UHFFFAOYSA-N bismuth;borate Chemical compound [Bi+3].[O-]B([O-])[O-] YISOXLVRWFDIKD-UHFFFAOYSA-N 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/04—Partial updating of the display screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
- G09G2320/046—Dealing with screen burn-in prevention or compensation of the effects thereof
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Liquid Crystal (AREA)
- Shift Register Type Memory (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010056464 | 2010-03-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201137850A TW201137850A (en) | 2011-11-01 |
| TWI541786B true TWI541786B (zh) | 2016-07-11 |
Family
ID=44559514
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105110569A TWI591614B (zh) | 2010-03-12 | 2011-03-10 | 顯示裝置 |
| TW106113501A TWI615831B (zh) | 2010-03-12 | 2011-03-10 | 顯示裝置 |
| TW100108101A TWI541786B (zh) | 2010-03-12 | 2011-03-10 | 顯示裝置 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105110569A TWI591614B (zh) | 2010-03-12 | 2011-03-10 | 顯示裝置 |
| TW106113501A TWI615831B (zh) | 2010-03-12 | 2011-03-10 | 顯示裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8836686B2 (enExample) |
| JP (8) | JP5947488B2 (enExample) |
| KR (2) | KR101798260B1 (enExample) |
| TW (3) | TWI591614B (enExample) |
| WO (1) | WO2011111531A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5436324B2 (ja) | 2010-05-10 | 2014-03-05 | 三菱電機株式会社 | シフトレジスタ回路 |
| KR102289951B1 (ko) | 2010-05-21 | 2021-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 출력 회로, 시프트 레지스터, 및 표시 장치 |
| US8718224B2 (en) * | 2011-08-05 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
| JP2013093565A (ja) | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR101396942B1 (ko) | 2012-03-21 | 2014-05-19 | 엘지디스플레이 주식회사 | 게이트 구동부 및 이를 포함하는 액정표시장치 |
| TWI635501B (zh) * | 2012-07-20 | 2018-09-11 | 半導體能源研究所股份有限公司 | 脈衝輸出電路、顯示裝置、及電子裝置 |
| US9041453B2 (en) | 2013-04-04 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Pulse generation circuit and semiconductor device |
| US9461126B2 (en) | 2013-09-13 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit |
| TWI500015B (zh) * | 2014-06-20 | 2015-09-11 | Au Optronics Corp | 雙向選擇電路、應用此雙向選擇電路的閘極驅動器與測試電路 |
| KR102611213B1 (ko) * | 2016-06-22 | 2023-12-07 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102490300B1 (ko) | 2016-07-29 | 2023-01-20 | 엘지디스플레이 주식회사 | 표시장치, 게이트 드라이버 및 게이트 드라이버의 구동 방법 |
| CN109791754A (zh) * | 2016-09-27 | 2019-05-21 | 夏普株式会社 | 显示面板 |
| JP7383623B2 (ja) | 2018-09-21 | 2023-11-20 | 株式会社半導体エネルギー研究所 | フリップ・フロップ回路、駆動回路、表示パネル、表示装置、入出力装置、情報処理装置 |
| CN112596430A (zh) * | 2020-12-03 | 2021-04-02 | 深圳市道和实业有限公司 | 一种电子书的精准显示的手写板电路 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3476241B2 (ja) | 1994-02-25 | 2003-12-10 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置の表示方法 |
| JP3617896B2 (ja) * | 1997-02-12 | 2005-02-09 | 株式会社東芝 | 液晶表示装置及び駆動方法 |
| KR100430099B1 (ko) * | 1999-03-02 | 2004-05-03 | 엘지.필립스 엘시디 주식회사 | 쉬프트 레지스터 회로 |
| JP3767292B2 (ja) * | 1999-12-22 | 2006-04-19 | セイコーエプソン株式会社 | 表示装置の駆動方法 |
| JP4537526B2 (ja) * | 2000-03-22 | 2010-09-01 | 東芝モバイルディスプレイ株式会社 | 液晶表示装置及びその駆動方法 |
| TW494382B (en) * | 2000-03-22 | 2002-07-11 | Toshiba Corp | Display apparatus and driving method of display apparatus |
| JP2002140052A (ja) * | 2000-08-23 | 2002-05-17 | Semiconductor Energy Lab Co Ltd | 携帯情報装置及びその駆動方法 |
| JP2002169499A (ja) * | 2000-11-30 | 2002-06-14 | Sanyo Electric Co Ltd | 表示パネルの駆動方法及び表示パネルの駆動制御装置 |
| JP4425547B2 (ja) * | 2003-01-17 | 2010-03-03 | 株式会社半導体エネルギー研究所 | パルス出力回路、シフトレジスタ、および電子機器 |
| US7369111B2 (en) * | 2003-04-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Gate driving circuit and display apparatus having the same |
| JP4105132B2 (ja) * | 2003-08-22 | 2008-06-25 | シャープ株式会社 | 表示装置の駆動回路、表示装置および表示装置の駆動方法 |
| JP4662014B2 (ja) * | 2003-09-29 | 2011-03-30 | 東北パイオニア株式会社 | 発光表示パネルの駆動装置および駆動方法 |
| TWI258724B (en) * | 2003-10-28 | 2006-07-21 | Samsung Electronics Co Ltd | Circuits and methods providing reduced power consumption for driving flat panel displays |
| JP4993544B2 (ja) * | 2005-03-30 | 2012-08-08 | 三菱電機株式会社 | シフトレジスタ回路 |
| KR101152129B1 (ko) | 2005-06-23 | 2012-06-15 | 삼성전자주식회사 | 표시 장치용 시프트 레지스터 및 이를 포함하는 표시 장치 |
| EP3614442A3 (en) * | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
| JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| US7612770B2 (en) * | 2005-12-15 | 2009-11-03 | Tpo Displays Corp. | Systems for displaying images |
| JP4728816B2 (ja) * | 2006-01-13 | 2011-07-20 | 東芝モバイルディスプレイ株式会社 | 表示装置及びその駆動方法及び端末装置 |
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| TWI511116B (zh) * | 2006-10-17 | 2015-12-01 | Semiconductor Energy Lab | 脈衝輸出電路、移位暫存器及顯示裝置 |
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2011
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- 2011-02-17 KR KR1020127026490A patent/KR101798260B1/ko not_active Expired - Fee Related
- 2011-02-17 KR KR1020177032451A patent/KR101975140B1/ko not_active Expired - Fee Related
- 2011-03-07 JP JP2011049377A patent/JP5947488B2/ja not_active Expired - Fee Related
- 2011-03-09 US US13/044,130 patent/US8836686B2/en not_active Expired - Fee Related
- 2011-03-10 TW TW105110569A patent/TWI591614B/zh active
- 2011-03-10 TW TW106113501A patent/TWI615831B/zh active
- 2011-03-10 TW TW100108101A patent/TWI541786B/zh not_active IP Right Cessation
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2016
- 2016-02-05 JP JP2016021011A patent/JP6074077B2/ja active Active
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2017
- 2017-01-05 JP JP2017000335A patent/JP2017111449A/ja not_active Withdrawn
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- 2019-03-22 JP JP2019054604A patent/JP2019144561A/ja not_active Withdrawn
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201730872A (zh) | 2017-09-01 |
| KR101798260B1 (ko) | 2017-11-15 |
| TWI615831B (zh) | 2018-02-21 |
| JP2011209714A (ja) | 2011-10-20 |
| US20110221734A1 (en) | 2011-09-15 |
| TWI591614B (zh) | 2017-07-11 |
| JP2017111449A (ja) | 2017-06-22 |
| JP5947488B2 (ja) | 2016-07-06 |
| JP2023024457A (ja) | 2023-02-16 |
| TW201638927A (zh) | 2016-11-01 |
| KR20130006655A (ko) | 2013-01-17 |
| JP2019144561A (ja) | 2019-08-29 |
| JP6074077B2 (ja) | 2017-02-01 |
| US8836686B2 (en) | 2014-09-16 |
| JP2025129161A (ja) | 2025-09-04 |
| JP2025085658A (ja) | 2025-06-05 |
| JP2021061085A (ja) | 2021-04-15 |
| KR101975140B1 (ko) | 2019-05-03 |
| WO2011111531A1 (en) | 2011-09-15 |
| JP2016136447A (ja) | 2016-07-28 |
| JP2024037759A (ja) | 2024-03-19 |
| TW201137850A (en) | 2011-11-01 |
| KR20170127062A (ko) | 2017-11-20 |
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