TWI541125B - 在壓印製程之分離相期間的應變及動力學控制技術 - Google Patents
在壓印製程之分離相期間的應變及動力學控制技術 Download PDFInfo
- Publication number
- TWI541125B TWI541125B TW102121927A TW102121927A TWI541125B TW I541125 B TWI541125 B TW I541125B TW 102121927 A TW102121927 A TW 102121927A TW 102121927 A TW102121927 A TW 102121927A TW I541125 B TWI541125 B TW I541125B
- Authority
- TW
- Taiwan
- Prior art keywords
- template
- substrate
- separation
- force
- pattern
- Prior art date
Links
- 238000000926 separation method Methods 0.000 title claims description 129
- 238000000034 method Methods 0.000 title claims description 47
- 230000008569 process Effects 0.000 title description 25
- 239000000758 substrate Substances 0.000 claims description 133
- 230000002829 reductive effect Effects 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 6
- 238000004458 analytical method Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 68
- 238000012876 topography Methods 0.000 description 23
- 239000000463 material Substances 0.000 description 18
- 238000004049 embossing Methods 0.000 description 14
- 230000001133 acceleration Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 10
- 230000009471 action Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000001459 lithography Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 230000000877 morphologic effect Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000000203 droplet dispensing Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000051 modifying effect Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/0003—Discharging moulded articles from the mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10813108P | 2008-10-24 | 2008-10-24 | |
| US10955708P | 2008-10-30 | 2008-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201345698A TW201345698A (zh) | 2013-11-16 |
| TWI541125B true TWI541125B (zh) | 2016-07-11 |
Family
ID=42116691
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102121927A TWI541125B (zh) | 2008-10-24 | 2009-10-26 | 在壓印製程之分離相期間的應變及動力學控制技術 |
| TW098136139A TWI405659B (zh) | 2008-10-24 | 2009-10-26 | 在壓印製程之分離相期間的應變及動力學控制技術 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098136139A TWI405659B (zh) | 2008-10-24 | 2009-10-26 | 在壓印製程之分離相期間的應變及動力學控制技術 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8652393B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2350741B1 (cg-RX-API-DMAC7.html) |
| JP (2) | JP2012507141A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20110086832A (cg-RX-API-DMAC7.html) |
| CN (1) | CN102203671B (cg-RX-API-DMAC7.html) |
| MY (1) | MY152446A (cg-RX-API-DMAC7.html) |
| TW (2) | TWI541125B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2010047837A2 (cg-RX-API-DMAC7.html) |
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| JPH11508790A (ja) | 1995-06-30 | 1999-08-03 | ボストン・サイエンティフィック・コーポレイション | 切断エレメントを備えた超音波映写カテーテル |
| US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| JP4792096B2 (ja) * | 2009-03-19 | 2011-10-12 | 株式会社東芝 | テンプレートパターンの設計方法、テンプレートの製造方法及び半導体装置の製造方法。 |
| JP4940262B2 (ja) * | 2009-03-25 | 2012-05-30 | 株式会社東芝 | インプリントパターン形成方法 |
| JP5499668B2 (ja) * | 2009-12-03 | 2014-05-21 | 大日本印刷株式会社 | インプリント用モールドおよび該モールドを用いたパターン形成方法 |
| KR101960362B1 (ko) * | 2010-04-27 | 2019-03-20 | 캐논 나노테크놀로지즈 인코퍼레이티드 | 나노임프린트 리소그래피를 위한 기판/주형의 분리 제어 |
| JP5750992B2 (ja) * | 2011-04-27 | 2015-07-22 | 大日本印刷株式会社 | インプリント方法およびそれを実施するためのインプリント装置 |
| JP5875250B2 (ja) * | 2011-04-28 | 2016-03-02 | キヤノン株式会社 | インプリント装置、インプリント方法及びデバイス製造方法 |
| JP5747670B2 (ja) * | 2011-06-10 | 2015-07-15 | 大日本印刷株式会社 | 成形部材およびその製造方法 |
| JP6004738B2 (ja) * | 2011-09-07 | 2016-10-12 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| JP5535162B2 (ja) * | 2011-09-21 | 2014-07-02 | 株式会社東芝 | パターン形成装置、パターン形成方法及びパターン形成用プログラム |
| JP2013069920A (ja) * | 2011-09-22 | 2013-04-18 | Toshiba Corp | 成膜方法およびパターン形成方法 |
| JP6140966B2 (ja) | 2011-10-14 | 2017-06-07 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| JP2014033050A (ja) * | 2012-08-02 | 2014-02-20 | Toshiba Corp | インプリントシステム及びインプリント方法 |
| US20140239529A1 (en) * | 2012-09-28 | 2014-08-28 | Nanonex Corporation | System and Methods For Nano-Scale Manufacturing |
| JP6060796B2 (ja) * | 2013-04-22 | 2017-01-18 | 大日本印刷株式会社 | インプリントモールド及びダミーパターン設計方法 |
| CN103529644A (zh) * | 2013-10-25 | 2014-01-22 | 无锡英普林纳米科技有限公司 | 一种纳米压印机 |
| US10088747B2 (en) | 2014-03-31 | 2018-10-02 | Koninklijke Philips N.V. | Imprinting method, computer program product and apparatus for the same |
| JP6472189B2 (ja) * | 2014-08-14 | 2019-02-20 | キヤノン株式会社 | インプリント装置、インプリント方法及び物品の製造方法 |
| JP6774178B2 (ja) * | 2015-11-16 | 2020-10-21 | キヤノン株式会社 | 基板を処理する装置、及び物品の製造方法 |
| JP6335948B2 (ja) * | 2016-02-12 | 2018-05-30 | キヤノン株式会社 | インプリント装置および物品製造方法 |
| TWI672212B (zh) * | 2016-08-25 | 2019-09-21 | 國立成功大學 | 奈米壓印組合體及其壓印方法 |
| US10627715B2 (en) * | 2016-10-31 | 2020-04-21 | Canon Kabushiki Kaisha | Method for separating a nanoimprint template from a substrate |
| JP6762853B2 (ja) | 2016-11-11 | 2020-09-30 | キヤノン株式会社 | 装置、方法、及び物品製造方法 |
| US11442359B2 (en) | 2019-03-11 | 2022-09-13 | Canon Kabushiki Kaisha | Method of separating a template from a shaped film on a substrate |
| JP7284639B2 (ja) * | 2019-06-07 | 2023-05-31 | キヤノン株式会社 | 成形装置、および物品製造方法 |
| US11034057B2 (en) * | 2019-08-15 | 2021-06-15 | Canon Kabushiki Kaisha | Planarization process, apparatus and method of manufacturing an article |
| TWI888630B (zh) * | 2020-09-01 | 2025-07-01 | 美商伊路米納有限公司 | 夾具及相關系統及方法 |
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| SG185929A1 (en) | 2007-11-21 | 2012-12-28 | Molecular Imprints Inc | Porous template and imprinting stack for nano-imprint lithography |
| US8075299B2 (en) | 2008-10-21 | 2011-12-13 | Molecular Imprints, Inc. | Reduction of stress during template separation |
| US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| US8309008B2 (en) | 2008-10-30 | 2012-11-13 | Molecular Imprints, Inc. | Separation in an imprint lithography process |
| JP4940262B2 (ja) * | 2009-03-25 | 2012-05-30 | 株式会社東芝 | インプリントパターン形成方法 |
-
2009
- 2009-10-23 US US12/604,517 patent/US8652393B2/en active Active
- 2009-10-26 WO PCT/US2009/005803 patent/WO2010047837A2/en not_active Ceased
- 2009-10-26 MY MYPI20111581 patent/MY152446A/en unknown
- 2009-10-26 EP EP09748532A patent/EP2350741B1/en active Active
- 2009-10-26 JP JP2011533187A patent/JP2012507141A/ja active Pending
- 2009-10-26 KR KR1020117011723A patent/KR20110086832A/ko not_active Ceased
- 2009-10-26 CN CN2009801426456A patent/CN102203671B/zh active Active
- 2009-10-26 TW TW102121927A patent/TWI541125B/zh active
- 2009-10-26 TW TW098136139A patent/TWI405659B/zh active
-
2014
- 2014-01-08 US US14/150,261 patent/US20140117574A1/en not_active Abandoned
- 2014-04-10 JP JP2014080783A patent/JP5728602B2/ja active Active
-
2019
- 2019-01-31 US US16/264,318 patent/US11161280B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20140117574A1 (en) | 2014-05-01 |
| EP2350741B1 (en) | 2012-08-29 |
| US20100102469A1 (en) | 2010-04-29 |
| TWI405659B (zh) | 2013-08-21 |
| WO2010047837A2 (en) | 2010-04-29 |
| MY152446A (en) | 2014-09-30 |
| US8652393B2 (en) | 2014-02-18 |
| KR20110086832A (ko) | 2011-08-01 |
| JP5728602B2 (ja) | 2015-06-03 |
| TW201345698A (zh) | 2013-11-16 |
| US20190232533A1 (en) | 2019-08-01 |
| CN102203671B (zh) | 2013-07-17 |
| US11161280B2 (en) | 2021-11-02 |
| JP2012507141A (ja) | 2012-03-22 |
| CN102203671A (zh) | 2011-09-28 |
| JP2014160844A (ja) | 2014-09-04 |
| EP2350741A2 (en) | 2011-08-03 |
| WO2010047837A3 (en) | 2010-10-07 |
| TW201026482A (en) | 2010-07-16 |
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