TWI539232B - 形成圖案化薄膜之方法、製造光學元件之方法、製造電路板之方法及製造電子元件之方法 - Google Patents
形成圖案化薄膜之方法、製造光學元件之方法、製造電路板之方法及製造電子元件之方法 Download PDFInfo
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- TWI539232B TWI539232B TW103132793A TW103132793A TWI539232B TW I539232 B TWI539232 B TW I539232B TW 103132793 A TW103132793 A TW 103132793A TW 103132793 A TW103132793 A TW 103132793A TW I539232 B TWI539232 B TW I539232B
- Authority
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- Prior art keywords
- photocurable composition
- light
- mold
- alignment mark
- refractive index
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000003287 optical effect Effects 0.000 title claims description 15
- 239000000203 mixture Substances 0.000 claims description 156
- 239000000758 substrate Substances 0.000 claims description 93
- 239000007789 gas Substances 0.000 claims description 81
- 230000007246 mechanism Effects 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- LDAACDUOJGZYDE-UHFFFAOYSA-N 1,1,1,3,3-pentafluoropropane Chemical compound FC(CC(F)F)(F)F.FC(CC(F)F)(F)F LDAACDUOJGZYDE-UHFFFAOYSA-N 0.000 claims 3
- 230000000737 periodic effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 68
- 230000008569 process Effects 0.000 description 11
- 238000000576 coating method Methods 0.000 description 9
- 239000000178 monomer Substances 0.000 description 9
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- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 7
- MSSNHSVIGIHOJA-UHFFFAOYSA-N pentafluoropropane Chemical compound FC(F)CC(F)(F)F MSSNHSVIGIHOJA-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- LDTMPQQAWUMPKS-OWOJBTEDSA-N (e)-1-chloro-3,3,3-trifluoroprop-1-ene Chemical compound FC(F)(F)\C=C\Cl LDTMPQQAWUMPKS-OWOJBTEDSA-N 0.000 description 1
- GCDWNCOAODIANN-UHFFFAOYSA-N 1,1,1,2,2-pentafluoro-2-methoxyethane Chemical compound COC(F)(F)C(F)(F)F GCDWNCOAODIANN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 238000007754 air knife coating Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013198446A JP6230353B2 (ja) | 2013-09-25 | 2013-09-25 | パターン形状を有する膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子機器の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201512769A TW201512769A (zh) | 2015-04-01 |
| TWI539232B true TWI539232B (zh) | 2016-06-21 |
Family
ID=52742520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103132793A TWI539232B (zh) | 2013-09-25 | 2014-09-23 | 形成圖案化薄膜之方法、製造光學元件之方法、製造電路板之方法及製造電子元件之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20160219717A1 (enExample) |
| EP (1) | EP3061121B1 (enExample) |
| JP (1) | JP6230353B2 (enExample) |
| KR (1) | KR101788493B1 (enExample) |
| CN (1) | CN105580109B (enExample) |
| TW (1) | TWI539232B (enExample) |
| WO (1) | WO2015045348A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6403627B2 (ja) | 2015-04-14 | 2018-10-10 | キヤノン株式会社 | インプリント装置、インプリント方法及び物品の製造方法 |
| US10578965B2 (en) * | 2016-03-31 | 2020-03-03 | Canon Kabushiki Kaisha | Pattern forming method |
| AU2018234668A1 (en) * | 2017-03-16 | 2019-09-12 | Molecular Imprints, Inc. | Optical polymer films and methods for casting the same |
| CN115257026A (zh) | 2017-10-17 | 2022-11-01 | 奇跃公司 | 用于铸造聚合物产品的方法和装置 |
| TWI728489B (zh) * | 2019-10-04 | 2021-05-21 | 永嘉光電股份有限公司 | 利用可溶解性模仁的壓印方法及相關壓印系統 |
| TWI758185B (zh) * | 2021-05-12 | 2022-03-11 | 永嘉光電股份有限公司 | 提升脫模穩定性之壓印方法及相關壓印系統 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53104781A (en) | 1977-02-24 | 1978-09-12 | Fujisawa Mfg | Apparatus for filling bread dough into mold |
| EP1309897A2 (en) | 2000-08-01 | 2003-05-14 | Board Of Regents, The University Of Texas System | Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography |
| JP2006516065A (ja) * | 2002-08-01 | 2006-06-15 | モレキュラー・インプリンツ・インコーポレーテッド | インプリント・リソグラフィの散乱計測アラインメント |
| JP3700001B2 (ja) * | 2002-09-10 | 2005-09-28 | 独立行政法人産業技術総合研究所 | インプリント方法及び装置 |
| US7136150B2 (en) | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
| JP4290177B2 (ja) | 2005-06-08 | 2009-07-01 | キヤノン株式会社 | モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法 |
| KR100790899B1 (ko) * | 2006-12-01 | 2008-01-03 | 삼성전자주식회사 | 얼라인 마크가 형성된 템플릿 및 그 제조 방법 |
| NL2004932A (en) * | 2009-07-27 | 2011-01-31 | Asml Netherlands Bv | Imprint lithography template. |
| NL2005266A (en) * | 2009-10-28 | 2011-05-02 | Asml Netherlands Bv | Imprint lithography. |
| JP5618588B2 (ja) | 2010-03-24 | 2014-11-05 | キヤノン株式会社 | インプリント方法 |
| JP5679850B2 (ja) * | 2011-02-07 | 2015-03-04 | キヤノン株式会社 | インプリント装置、および、物品の製造方法 |
| KR101354742B1 (ko) * | 2011-06-30 | 2014-01-22 | 가부시끼가이샤 도시바 | 템플릿 기판 및 그 제조 방법 |
| JP2013070033A (ja) * | 2011-09-05 | 2013-04-18 | Canon Inc | インプリント装置、インプリント方法及び物品の製造方法 |
-
2013
- 2013-09-25 JP JP2013198446A patent/JP6230353B2/ja not_active Expired - Fee Related
-
2014
- 2014-09-22 CN CN201480053312.7A patent/CN105580109B/zh not_active Expired - Fee Related
- 2014-09-22 US US15/024,797 patent/US20160219717A1/en not_active Abandoned
- 2014-09-22 EP EP14847055.2A patent/EP3061121B1/en not_active Not-in-force
- 2014-09-22 WO PCT/JP2014/004839 patent/WO2015045348A1/en not_active Ceased
- 2014-09-22 KR KR1020167010639A patent/KR101788493B1/ko not_active Expired - Fee Related
- 2014-09-23 TW TW103132793A patent/TWI539232B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP3061121A4 (en) | 2017-06-28 |
| KR101788493B1 (ko) | 2017-10-19 |
| US20160219717A1 (en) | 2016-07-28 |
| JP6230353B2 (ja) | 2017-11-15 |
| EP3061121B1 (en) | 2019-08-28 |
| CN105580109A (zh) | 2016-05-11 |
| JP2015065308A (ja) | 2015-04-09 |
| KR20160063359A (ko) | 2016-06-03 |
| WO2015045348A1 (en) | 2015-04-02 |
| CN105580109B (zh) | 2017-09-15 |
| EP3061121A1 (en) | 2016-08-31 |
| TW201512769A (zh) | 2015-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |