TWI539232B - 形成圖案化薄膜之方法、製造光學元件之方法、製造電路板之方法及製造電子元件之方法 - Google Patents

形成圖案化薄膜之方法、製造光學元件之方法、製造電路板之方法及製造電子元件之方法 Download PDF

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Publication number
TWI539232B
TWI539232B TW103132793A TW103132793A TWI539232B TW I539232 B TWI539232 B TW I539232B TW 103132793 A TW103132793 A TW 103132793A TW 103132793 A TW103132793 A TW 103132793A TW I539232 B TWI539232 B TW I539232B
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TW
Taiwan
Prior art keywords
photocurable composition
light
mold
alignment mark
refractive index
Prior art date
Application number
TW103132793A
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English (en)
Chinese (zh)
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TW201512769A (zh
Inventor
伊藤俊樹
石田晋吾
川陽司
酒井啓太
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佳能股份有限公司
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Publication of TW201512769A publication Critical patent/TW201512769A/zh
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Publication of TWI539232B publication Critical patent/TWI539232B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Integrated Circuits (AREA)
TW103132793A 2013-09-25 2014-09-23 形成圖案化薄膜之方法、製造光學元件之方法、製造電路板之方法及製造電子元件之方法 TWI539232B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013198446A JP6230353B2 (ja) 2013-09-25 2013-09-25 パターン形状を有する膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子機器の製造方法

Publications (2)

Publication Number Publication Date
TW201512769A TW201512769A (zh) 2015-04-01
TWI539232B true TWI539232B (zh) 2016-06-21

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Family Applications (1)

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TW103132793A TWI539232B (zh) 2013-09-25 2014-09-23 形成圖案化薄膜之方法、製造光學元件之方法、製造電路板之方法及製造電子元件之方法

Country Status (7)

Country Link
US (1) US20160219717A1 (enExample)
EP (1) EP3061121B1 (enExample)
JP (1) JP6230353B2 (enExample)
KR (1) KR101788493B1 (enExample)
CN (1) CN105580109B (enExample)
TW (1) TWI539232B (enExample)
WO (1) WO2015045348A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6403627B2 (ja) 2015-04-14 2018-10-10 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
US10578965B2 (en) * 2016-03-31 2020-03-03 Canon Kabushiki Kaisha Pattern forming method
CN111010871B (zh) * 2017-03-16 2024-07-30 分子印记公司 光学聚合物膜及其铸造方法
CA3076669A1 (en) 2017-10-17 2019-04-25 Magic Leap, Inc. Methods and apparatuses for casting polymer products
TWI728489B (zh) * 2019-10-04 2021-05-21 永嘉光電股份有限公司 利用可溶解性模仁的壓印方法及相關壓印系統
TWI758185B (zh) * 2021-05-12 2022-03-11 永嘉光電股份有限公司 提升脫模穩定性之壓印方法及相關壓印系統
US12631789B2 (en) 2021-04-26 2026-05-19 Meta Platforms Technologies, Llc High index lens including uniaxial or biaxial organic solid material

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JPS53104781A (en) 1977-02-24 1978-09-12 Fujisawa Mfg Apparatus for filling bread dough into mold
US6954275B2 (en) * 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
KR20050026088A (ko) * 2002-08-01 2005-03-14 몰레큘러 임프린츠 인코퍼레이티드 임프린트 리소그래피용 산란측정 정렬
JP3700001B2 (ja) * 2002-09-10 2005-09-28 独立行政法人産業技術総合研究所 インプリント方法及び装置
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
JP4290177B2 (ja) * 2005-06-08 2009-07-01 キヤノン株式会社 モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法
KR100790899B1 (ko) * 2006-12-01 2008-01-03 삼성전자주식회사 얼라인 마크가 형성된 템플릿 및 그 제조 방법
NL2004932A (en) * 2009-07-27 2011-01-31 Asml Netherlands Bv Imprint lithography template.
NL2005266A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Imprint lithography.
JP5618588B2 (ja) * 2010-03-24 2014-11-05 キヤノン株式会社 インプリント方法
JP5679850B2 (ja) * 2011-02-07 2015-03-04 キヤノン株式会社 インプリント装置、および、物品の製造方法
JP5890709B2 (ja) * 2011-06-30 2016-03-22 株式会社東芝 テンプレート用基板及びその製造方法
JP2013070033A (ja) * 2011-09-05 2013-04-18 Canon Inc インプリント装置、インプリント方法及び物品の製造方法

Also Published As

Publication number Publication date
CN105580109B (zh) 2017-09-15
KR101788493B1 (ko) 2017-10-19
WO2015045348A1 (en) 2015-04-02
EP3061121A4 (en) 2017-06-28
EP3061121A1 (en) 2016-08-31
EP3061121B1 (en) 2019-08-28
JP2015065308A (ja) 2015-04-09
KR20160063359A (ko) 2016-06-03
US20160219717A1 (en) 2016-07-28
TW201512769A (zh) 2015-04-01
JP6230353B2 (ja) 2017-11-15
CN105580109A (zh) 2016-05-11

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