CN105580109B - 图案化膜的形成方法、光学组件的制造方法、电路板的制造方法和电子组件的制造方法 - Google Patents

图案化膜的形成方法、光学组件的制造方法、电路板的制造方法和电子组件的制造方法 Download PDF

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Publication number
CN105580109B
CN105580109B CN201480053312.7A CN201480053312A CN105580109B CN 105580109 B CN105580109 B CN 105580109B CN 201480053312 A CN201480053312 A CN 201480053312A CN 105580109 B CN105580109 B CN 105580109B
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CN
China
Prior art keywords
photocurable composition
alignment mark
light
refractive index
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480053312.7A
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English (en)
Chinese (zh)
Other versions
CN105580109A (zh
Inventor
伊藤俊树
石田晋吾
川崎阳司
酒井启太
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Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN105580109A publication Critical patent/CN105580109A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Integrated Circuits (AREA)
CN201480053312.7A 2013-09-25 2014-09-22 图案化膜的形成方法、光学组件的制造方法、电路板的制造方法和电子组件的制造方法 Expired - Fee Related CN105580109B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013198446A JP6230353B2 (ja) 2013-09-25 2013-09-25 パターン形状を有する膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子機器の製造方法
JP2013-198446 2013-09-25
PCT/JP2014/004839 WO2015045348A1 (en) 2013-09-25 2014-09-22 Method for forming a patterned film, method for manufacturing optical component, method for manufacturing circuit board, and method for manufacturing electronic component

Publications (2)

Publication Number Publication Date
CN105580109A CN105580109A (zh) 2016-05-11
CN105580109B true CN105580109B (zh) 2017-09-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480053312.7A Expired - Fee Related CN105580109B (zh) 2013-09-25 2014-09-22 图案化膜的形成方法、光学组件的制造方法、电路板的制造方法和电子组件的制造方法

Country Status (7)

Country Link
US (1) US20160219717A1 (enExample)
EP (1) EP3061121B1 (enExample)
JP (1) JP6230353B2 (enExample)
KR (1) KR101788493B1 (enExample)
CN (1) CN105580109B (enExample)
TW (1) TWI539232B (enExample)
WO (1) WO2015045348A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6403627B2 (ja) 2015-04-14 2018-10-10 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
US10578965B2 (en) * 2016-03-31 2020-03-03 Canon Kabushiki Kaisha Pattern forming method
CN111010871B (zh) * 2017-03-16 2024-07-30 分子印记公司 光学聚合物膜及其铸造方法
CA3076669A1 (en) 2017-10-17 2019-04-25 Magic Leap, Inc. Methods and apparatuses for casting polymer products
TWI728489B (zh) * 2019-10-04 2021-05-21 永嘉光電股份有限公司 利用可溶解性模仁的壓印方法及相關壓印系統
TWI758185B (zh) * 2021-05-12 2022-03-11 永嘉光電股份有限公司 提升脫模穩定性之壓印方法及相關壓印系統
US12631789B2 (en) 2021-04-26 2026-05-19 Meta Platforms Technologies, Llc High index lens including uniaxial or biaxial organic solid material

Citations (5)

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CN101201538A (zh) * 2006-12-01 2008-06-18 三星电子株式会社 具有对准标记的图案模板及其制造方法
US20110018168A1 (en) * 2009-07-27 2011-01-27 Asml Netherlands B.V. Imprint lithography template
US20110095455A1 (en) * 2009-10-28 2011-04-28 Asml Netherlands B.V. Imprint lithography
CN102200687A (zh) * 2010-03-24 2011-09-28 佳能株式会社 压印设备和制造物品的方法
WO2013035761A1 (en) * 2011-09-05 2013-03-14 Canon Kabushiki Kaisha Imprint apparatus, imprint method, and manufacturing method of commodities

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JPS53104781A (en) 1977-02-24 1978-09-12 Fujisawa Mfg Apparatus for filling bread dough into mold
US6954275B2 (en) * 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
KR20050026088A (ko) * 2002-08-01 2005-03-14 몰레큘러 임프린츠 인코퍼레이티드 임프린트 리소그래피용 산란측정 정렬
JP3700001B2 (ja) * 2002-09-10 2005-09-28 独立行政法人産業技術総合研究所 インプリント方法及び装置
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
JP4290177B2 (ja) * 2005-06-08 2009-07-01 キヤノン株式会社 モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法
JP5679850B2 (ja) * 2011-02-07 2015-03-04 キヤノン株式会社 インプリント装置、および、物品の製造方法
JP5890709B2 (ja) * 2011-06-30 2016-03-22 株式会社東芝 テンプレート用基板及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101201538A (zh) * 2006-12-01 2008-06-18 三星电子株式会社 具有对准标记的图案模板及其制造方法
US20110018168A1 (en) * 2009-07-27 2011-01-27 Asml Netherlands B.V. Imprint lithography template
US20110095455A1 (en) * 2009-10-28 2011-04-28 Asml Netherlands B.V. Imprint lithography
CN102200687A (zh) * 2010-03-24 2011-09-28 佳能株式会社 压印设备和制造物品的方法
WO2013035761A1 (en) * 2011-09-05 2013-03-14 Canon Kabushiki Kaisha Imprint apparatus, imprint method, and manufacturing method of commodities

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
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Effects of Environmental Gas in UV Nanoimprint on the Characteristics of UV-Curable Resin;Qing Wang et,al;《Japanese Journal of Applied Physics》;20100621;第49卷(第6期);第1-4页 *

Also Published As

Publication number Publication date
KR101788493B1 (ko) 2017-10-19
WO2015045348A1 (en) 2015-04-02
TWI539232B (zh) 2016-06-21
EP3061121A4 (en) 2017-06-28
EP3061121A1 (en) 2016-08-31
EP3061121B1 (en) 2019-08-28
JP2015065308A (ja) 2015-04-09
KR20160063359A (ko) 2016-06-03
US20160219717A1 (en) 2016-07-28
TW201512769A (zh) 2015-04-01
JP6230353B2 (ja) 2017-11-15
CN105580109A (zh) 2016-05-11

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Granted publication date: 20170915