TWI534858B - 模具 - Google Patents
模具 Download PDFInfo
- Publication number
- TWI534858B TWI534858B TW103120021A TW103120021A TWI534858B TW I534858 B TWI534858 B TW I534858B TW 103120021 A TW103120021 A TW 103120021A TW 103120021 A TW103120021 A TW 103120021A TW I534858 B TWI534858 B TW I534858B
- Authority
- TW
- Taiwan
- Prior art keywords
- mold
- pattern
- light shielding
- light
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 72
- 239000011347 resin Substances 0.000 claims description 59
- 229920005989 resin Polymers 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 41
- 230000002093 peripheral effect Effects 0.000 claims description 39
- 230000001681 protective effect Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 38
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013134209A JP6368075B2 (ja) | 2013-06-26 | 2013-06-26 | モールド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201503232A TW201503232A (zh) | 2015-01-16 |
| TWI534858B true TWI534858B (zh) | 2016-05-21 |
Family
ID=52115827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103120021A TWI534858B (zh) | 2013-06-26 | 2014-06-10 | 模具 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20150004275A1 (enExample) |
| JP (1) | JP6368075B2 (enExample) |
| KR (1) | KR101717328B1 (enExample) |
| CN (1) | CN104249420A (enExample) |
| TW (1) | TWI534858B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160023404A1 (en) * | 2014-07-25 | 2016-01-28 | Stephen Raymond Anderson | Three-dimensional manufacturing, fabricating, forming, and/or repairing apparatus and method |
| US10409156B2 (en) * | 2015-02-13 | 2019-09-10 | Canon Kabushiki Kaisha | Mold, imprint apparatus, and method of manufacturing article |
| JP6583747B2 (ja) * | 2015-09-29 | 2019-10-02 | 大日本印刷株式会社 | インプリント用のモールドおよびその製造方法 |
| US20170210036A1 (en) * | 2016-01-22 | 2017-07-27 | Canon Kabushiki Kaisha | Mold replicating method, imprint apparatus, and article manufacturing method |
| TWI565577B (zh) * | 2016-01-29 | 2017-01-11 | 森田印刷廠股份有限公司 | 模內轉印模具及模內轉印方法 |
| JP6748496B2 (ja) * | 2016-06-30 | 2020-09-02 | キヤノン株式会社 | モールド、インプリント方法、インプリント装置および物品製造方法 |
| CN108068254A (zh) * | 2016-11-14 | 2018-05-25 | 昇印光电(昆山)股份有限公司 | 微纳结构压印模具 |
| JP6821408B2 (ja) * | 2016-11-28 | 2021-01-27 | キヤノン株式会社 | インプリント装置、インプリント方法、および物品の製造方法 |
| US10712660B2 (en) * | 2016-12-21 | 2020-07-14 | Canon Kabushiki Kaisha | Template for imprint lithography including a recession and an apparatus and method of using the template |
| CN109397677A (zh) * | 2017-08-18 | 2019-03-01 | 昇印光电(昆山)股份有限公司 | 微纳压印模具 |
| TWI754374B (zh) * | 2018-04-09 | 2022-02-01 | 日商大日本印刷股份有限公司 | 奈米壓印用模片及其製造方法、及、2段台面基底及其製造方法 |
| US11281095B2 (en) | 2018-12-05 | 2022-03-22 | Canon Kabushiki Kaisha | Frame curing template and system and method of using the frame curing template |
| JP7278135B2 (ja) | 2019-04-02 | 2023-05-19 | キヤノン株式会社 | インプリント装置および物品製造方法 |
| JP7414508B2 (ja) * | 2019-12-16 | 2024-01-16 | キヤノン株式会社 | インプリント装置、および物品製造方法 |
| US11747731B2 (en) | 2020-11-20 | 2023-09-05 | Canon Kabishiki Kaisha | Curing a shaped film using multiple images of a spatial light modulator |
| JP2023091495A (ja) * | 2021-12-20 | 2023-06-30 | キヤノン株式会社 | インプリント方法、インプリント装置および物品製造方法。 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4727806A (en) * | 1985-08-26 | 1988-03-01 | Wilson Engraving Company, Inc. | Pin register system for flexographic printing plates |
| US8011916B2 (en) * | 2005-09-06 | 2011-09-06 | Canon Kabushiki Kaisha | Mold, imprint apparatus, and process for producing structure |
| JP5182470B2 (ja) * | 2007-07-17 | 2013-04-17 | 大日本印刷株式会社 | インプリントモールド |
| JP4799575B2 (ja) * | 2008-03-06 | 2011-10-26 | 株式会社東芝 | インプリント方法 |
| JP5534311B2 (ja) * | 2010-01-22 | 2014-06-25 | Hoya株式会社 | マスクブランク用基板とその製造方法、インプリントモールド用マスクブランクとその製造方法、及びインプリントモールドとその製造方法 |
| JP5744590B2 (ja) * | 2011-03-28 | 2015-07-08 | キヤノン株式会社 | インプリント方法、型、それらを用いた物品の製造方法 |
| JP5831012B2 (ja) * | 2011-07-27 | 2015-12-09 | 大日本印刷株式会社 | インプリント用位置合わせマーク、該マークを備えたテンプレートおよびその製造方法 |
| JP6061524B2 (ja) * | 2011-08-11 | 2017-01-18 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
| JP2013051360A (ja) * | 2011-08-31 | 2013-03-14 | Fujikura Ltd | 絶縁性基板の製造方法及び多層積層板の製造方法 |
-
2013
- 2013-06-26 JP JP2013134209A patent/JP6368075B2/ja active Active
-
2014
- 2014-06-10 TW TW103120021A patent/TWI534858B/zh active
- 2014-06-18 KR KR1020140074106A patent/KR101717328B1/ko active Active
- 2014-06-23 CN CN201410282999.3A patent/CN104249420A/zh active Pending
- 2014-06-23 US US14/311,759 patent/US20150004275A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015012034A (ja) | 2015-01-19 |
| CN104249420A (zh) | 2014-12-31 |
| US20150004275A1 (en) | 2015-01-01 |
| JP6368075B2 (ja) | 2018-08-01 |
| KR101717328B1 (ko) | 2017-03-16 |
| TW201503232A (zh) | 2015-01-16 |
| KR20150001630A (ko) | 2015-01-06 |
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