TWI533474B - 光電元件 - Google Patents

光電元件 Download PDF

Info

Publication number
TWI533474B
TWI533474B TW103136727A TW103136727A TWI533474B TW I533474 B TWI533474 B TW I533474B TW 103136727 A TW103136727 A TW 103136727A TW 103136727 A TW103136727 A TW 103136727A TW I533474 B TWI533474 B TW I533474B
Authority
TW
Taiwan
Prior art keywords
semiconductor
electrode
units
extension
unit
Prior art date
Application number
TW103136727A
Other languages
English (en)
Chinese (zh)
Other versions
TW201519473A (zh
Inventor
沈建賦
井長慧
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW098305006F external-priority patent/TWD139103S1/zh
Priority claimed from TW099300687F external-priority patent/TWD139107S1/zh
Priority claimed from US12/830,059 external-priority patent/US9324691B2/en
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW201519473A publication Critical patent/TW201519473A/zh
Application granted granted Critical
Publication of TWI533474B publication Critical patent/TWI533474B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
TW103136727A 2009-10-20 2010-10-07 光電元件 TWI533474B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW098305006F TWD139103S1 (zh) 2009-10-20 2009-10-20 陣列式發光二極體
TW099300687F TWD139107S1 (zh) 2010-02-10 2010-02-10 發光二極體陣列
US12/830,059 US9324691B2 (en) 2009-10-20 2010-07-02 Optoelectronic device

Publications (2)

Publication Number Publication Date
TW201519473A TW201519473A (zh) 2015-05-16
TWI533474B true TWI533474B (zh) 2016-05-11

Family

ID=45349596

Family Applications (3)

Application Number Title Priority Date Filing Date
TW103136727A TWI533474B (zh) 2009-10-20 2010-10-07 光電元件
TW099134516A TWI466284B (zh) 2010-07-02 2010-10-07 光電元件
TW099134515A TWI446527B (zh) 2010-07-02 2010-10-07 光電元件

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW099134516A TWI466284B (zh) 2010-07-02 2010-10-07 光電元件
TW099134515A TWI446527B (zh) 2010-07-02 2010-10-07 光電元件

Country Status (5)

Country Link
JP (3) JP2012015480A (enExample)
KR (4) KR101616098B1 (enExample)
CN (2) CN105977272B (enExample)
DE (1) DE102010060269B4 (enExample)
TW (3) TWI533474B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI533474B (zh) * 2009-10-20 2016-05-11 晶元光電股份有限公司 光電元件
KR20140059985A (ko) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 발광소자
CN103811593B (zh) * 2012-11-12 2018-06-19 晶元光电股份有限公司 半导体光电元件的制作方法
KR101992366B1 (ko) * 2012-12-27 2019-06-24 엘지이노텍 주식회사 발광 소자
TWI633683B (zh) * 2013-08-27 2018-08-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
TWI597864B (zh) 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
CN104425538B (zh) * 2013-09-03 2019-05-03 晶元光电股份有限公司 具有多个发光结构的发光元件
CN104681575A (zh) * 2013-11-29 2015-06-03 晶元光电股份有限公司 发光二极管元件
JP6351520B2 (ja) * 2014-08-07 2018-07-04 株式会社東芝 半導体発光素子
CN110061027B (zh) * 2015-02-13 2024-01-19 首尔伟傲世有限公司 发光元件
KR102647673B1 (ko) * 2016-09-27 2024-03-14 서울바이오시스 주식회사 발광 다이오드
KR102480220B1 (ko) * 2016-04-08 2022-12-26 삼성전자주식회사 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널
KR101987196B1 (ko) 2016-06-14 2019-06-11 삼성디스플레이 주식회사 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법
KR102363036B1 (ko) * 2017-04-03 2022-02-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN107516701B (zh) * 2017-07-14 2019-06-11 华灿光电(苏州）有限公司 一种高压发光二极管芯片及其制作方法
TWI731163B (zh) * 2017-09-13 2021-06-21 晶元光電股份有限公司 半導體元件

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126483A (enExample) * 1974-08-29 1976-03-04 Mitsubishi Electric Corp
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JP4810746B2 (ja) * 2000-03-31 2011-11-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
EP1278249B8 (en) * 2000-03-31 2013-11-27 Toyoda Gosei Co., Ltd. Group-iii nitride compound semiconductor device
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP4585014B2 (ja) * 2002-04-12 2010-11-24 ソウル セミコンダクター カンパニー リミテッド 発光装置
JP3822545B2 (ja) * 2002-04-12 2006-09-20 士郎 酒井 発光装置
EP2149905A3 (en) * 2002-08-29 2014-05-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
JP4415575B2 (ja) 2003-06-25 2010-02-17 日亜化学工業株式会社 半導体発光素子及びそれを用いた発光装置
JP4572604B2 (ja) * 2003-06-30 2010-11-04 日亜化学工業株式会社 半導体発光素子及びそれを用いた発光装置
US7675075B2 (en) * 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP4160881B2 (ja) * 2003-08-28 2008-10-08 松下電器産業株式会社 半導体発光装置、発光モジュール、照明装置、および半導体発光装置の製造方法
JP4432413B2 (ja) * 2003-09-05 2010-03-17 日亜化学工業株式会社 光源装置及び車両用前照灯
JP2007517378A (ja) 2003-12-24 2007-06-28 松下電器産業株式会社 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
US20050274970A1 (en) * 2004-06-14 2005-12-15 Lumileds Lighting U.S., Llc Light emitting device with transparent substrate having backside vias
KR100665116B1 (ko) * 2005-01-27 2007-01-09 삼성전기주식회사 Ｅｓｄ 보호용 ｌｅｄ를 구비한 질화갈륨계 발광 소자 및그 제조 방법
KR100652864B1 (ko) * 2005-12-16 2006-12-04 서울옵토디바이스주식회사 개선된 투명전극 구조체를 갖는 교류용 발광 다이오드
DE102006015117A1 (de) * 2006-03-31 2007-10-04 Osram Opto Semiconductors Gmbh Optoelektronischer Scheinwerfer, Verfahren zum Herstellen eines optoelektronischen Scheinwerfers und Lumineszenzdiodenchip
KR100833309B1 (ko) * 2006-04-04 2008-05-28 삼성전기주식회사 질화물계 반도체 발광소자
EP3223313B1 (en) * 2007-01-22 2021-04-14 Cree, Inc. Monolithic light emitter having multiple light emitting sub-devices
CN102779918B (zh) * 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
JP2009231135A (ja) * 2008-03-24 2009-10-08 Toshiba Lighting & Technology Corp 照明装置
JP5229034B2 (ja) * 2008-03-28 2013-07-03 サンケン電気株式会社 発光装置
KR101025972B1 (ko) * 2008-06-30 2011-03-30 삼성엘이디 주식회사 교류 구동 발광 장치
WO2010015106A1 (zh) 2008-08-06 2010-02-11 海立尔股份有限公司 交流发光二极管结构
JP5217787B2 (ja) * 2008-08-27 2013-06-19 日亜化学工業株式会社 半導体発光素子
WO2010050694A2 (ko) 2008-10-29 2010-05-06 서울옵토디바이스주식회사 발광 다이오드
US8963175B2 (en) * 2008-11-06 2015-02-24 Samsung Electro-Mechanics Co., Ltd. Light emitting device and method of manufacturing the same
KR101020910B1 (ko) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP4566267B1 (ja) * 2009-04-21 2010-10-20 シャープ株式会社 電源装置
US9324691B2 (en) * 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
TWI533474B (zh) * 2009-10-20 2016-05-11 晶元光電股份有限公司 光電元件
WO2011115361A2 (ko) * 2010-03-15 2011-09-22 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 장치
JP5997737B2 (ja) * 2014-03-28 2016-09-28 株式会社インフォシティ コンテンツ再生装置

Also Published As

Publication number Publication date
CN102315239A (zh) 2012-01-11
TW201203534A (en) 2012-01-16
KR20160048745A (ko) 2016-05-04
KR101929867B1 (ko) 2019-03-14
JP6255372B2 (ja) 2017-12-27
DE102010060269A1 (de) 2012-01-05
JP2020145432A (ja) 2020-09-10
JP2016021595A (ja) 2016-02-04
TW201203533A (en) 2012-01-16
JP2012015480A (ja) 2012-01-19
KR20120003352A (ko) 2012-01-10
KR20170035357A (ko) 2017-03-30
TWI446527B (zh) 2014-07-21
KR20180006625A (ko) 2018-01-18
CN105977272A (zh) 2016-09-28
CN105977272B (zh) 2021-01-01
DE102010060269B4 (de) 2020-10-01
TWI466284B (zh) 2014-12-21
TW201519473A (zh) 2015-05-16
KR101616098B1 (ko) 2016-04-27
CN102315239B (zh) 2016-08-17
JP7001728B2 (ja) 2022-01-20

Similar Documents

Publication Publication Date Title
TWI533474B (zh) 光電元件
JP6679559B2 (ja) 光電素子
CN101958334B (zh) 发光二极管
US8598598B2 (en) Light emitting device having vertically stacked light emitting diodes
US8188489B2 (en) Light emitting diode for AC operation
TWI470824B (zh) 電極結構及其發光元件
TWI527261B (zh) 發光元件
US9601674B2 (en) Light-emitting device
KR101603773B1 (ko) 복수개의 발광셀들을 갖는 발광 다이오드
CN101866894B (zh) 电极结构及其发光元件
KR20150136201A (ko) 웨이퍼 레벨의 발광 다이오드 어레이