TWI525765B - 具有電氣絕緣後表面之凸塊自行絕緣氮化鎵電晶體晶片 - Google Patents

具有電氣絕緣後表面之凸塊自行絕緣氮化鎵電晶體晶片 Download PDF

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TWI525765B
TWI525765B TW099110725A TW99110725A TWI525765B TW I525765 B TWI525765 B TW I525765B TW 099110725 A TW099110725 A TW 099110725A TW 99110725 A TW99110725 A TW 99110725A TW I525765 B TWI525765 B TW I525765B
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component
substrate
heat sink
insulating
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TW201044530A (en
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亞力山大 里道
羅伯特 畢曲
亞雷納 納卡塔
建軍 曹
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高效電源轉換公司
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Description

具有電氣絕緣後表面之凸塊自行絕緣氮化鎵電晶體晶片 發明領域
本發明係有關於具有電氣絕緣後表面之凸塊自行絕緣氮化鎵電晶體晶片。
發明背景
製造於矽內的元件已經直接地架設至印刷電路板上歷時多年。問題是該元件的後表面仍然可以是電活化的，其可導致該後表面上的腐蝕及增高的溫度。設若使用一用於冷卻的散熱槽，該元件的後表面時常需要絕緣，其增加元件的尺寸與成本。
第1圖顯示被架設至一印刷電路板17上的已知元件1表面之實例。該印刷電路板17具有銅跡線15。由聚醯亞胺鈍化體16分隔開的銲料凸塊14係將該元件的該主動區13電氣且實體耦合至該印刷電路板17上的該等銅跡線15。元件1具有一側壁12及一後表面11。側壁12與後表面11被電氣地連接至前側上的電路。
第2圖顯示一散熱槽19，其係附著至元件1以將熱傳導離開該矽基材10的後表面11。當一散熱槽19附著至元件1的後表面11時，必須於該矽基材10與該散熱槽19之間添加絕緣體18以避免該散熱槽19透過與電氣地連接至前側之後表面11接觸而變成電活化狀態。然而，加入絕緣18不利地阻礙該散熱槽19將熱傳導離開該元件1的能力。
因此，以上提到的問題需要解決方法，即其中該散熱槽能被直接地連接至一表面架設元件的後表面，而不需要阻礙該元件之熱的通過之一絕緣層的一元件。
發明概要
本發明解決以上提到的先前技藝中的問題，藉由將氮化鋁(AlN)種晶層包含於該矽基材及該AlGaN緩衝層之間以避免該矽基材變成電活化，以及藉由電氣絕緣該元件的主動區與側壁。
1‧‧‧元件
2‧‧‧元件/加強模式GaN電晶體
10‧‧‧矽基材
11‧‧‧後表面
12‧‧‧側壁
13‧‧‧主動(元件)區
14‧‧‧銲料凸塊
15‧‧‧銅跡線
16‧‧‧聚醯亞胺鈍化體/額外層
17‧‧‧印刷電路板
18‧‧‧絕緣體/絕緣層
19‧‧‧散熱槽
20‧‧‧鈍化層
21‧‧‧AlN(種晶)層
22‧‧‧AlGaN/GaN異質接面結構
第1圖顯示一先前技藝元件的側面圖；第2圖顯示第1圖的先前技藝元件的側面圖，其具有附著的一散熱槽；第3圖顯示依據本發明的元件之側面圖；第4圖顯示本發明的元件之側面圖，其具有附著的一散熱槽。
較佳實施例之詳細說明
本發明消除了一絕緣層的需求，以及透過將氮化鋁(AlN)種晶層包含在矽基材與避免該矽基材變成電活化狀態之AlGaN緩衝層之間，，且透過使側壁與元件的主動區電氣絕緣，藉此改良至該散熱槽的熱傳導。
第3圖描繪本發明的一較佳實施例，一加強模式GaN電晶體2，其係被架設至一印刷電路板17上的一表面。如同先 前技藝中，由聚醯亞胺鈍化體16分隔開的銲料凸塊14係實際且電氣地將該元件的該主動區13耦合至該印刷電路板17上的銅跡線15。該主動區13的電氣接頭包括至少一個閘極電極、至少一個汲極電極，以及至少二個源極電極，該等源極電極的一者使用作為凱氏接頭(Kelvin connection)。
本發明的該元件2係形成如下。一低的溫度，通常非晶形氮化鋁(AlN)層係被沈積於矽基材10上。接而，使一較高的溫度AlN層生長，而完成AlN層21的形成。第二AlN層有許多的結晶缺陷。接著，於AlN種晶層21上生長一層AlGaN或InAlGaN，且結晶變得較佳。一未經摻雜的GaN層繼而以更佳的結晶結構生長。必要形成2DEG之該主動元件區13的AlGaN帽在周圍處被蝕刻，以避免該2DEG到達該元件的邊緣。未經摻雜的GaN層延伸至該等邊緣，但是，如同在底下的該AlGaN緩衝層與該AlN層21，此GaN層不傳導電力，因而使該元件的邊緣處於非活化狀態。該矽基材10同樣地透過AlN種晶層21而與該主動元件區13電氣絕緣。一鈍化層20係被添加於該主動元件區的上方，其包含絕緣材料，例如：二氧化矽、氮化矽、氮化鋁，或是此等化合物的各種組合。包含一塑膠膜(例如：環氧或聚醯亞胺)之一額外層16可以被添加用於額外的電氣絕緣。由於此電氣絕緣，元件2的後表面11與側壁12之腐蝕與溫度可被降低。
第4圖顯示一散熱槽附著至該元件2的該後表面11來散熱。包含該絕緣AlN種晶層21以電氣絕緣該矽基材10，以及電氣絕緣的側壁，允許該散熱槽19可被直接地連接至該元 件2的該後表面11而不需要如第2圖中顯示的該絕緣層18。因而，該元件2不具有顯示於第2圖中的元件1之問題；亦即，沒有厚的絕緣體18阻礙該散熱槽19將熱傳導離開該元件的能力。此外，元件2對濕氣比元件1更有抵抗性。所需為元件2的頂表面之表面鈍化，較佳氮化矽、二氧化矽，或二者的組合。不需要包塑成型，因而提供晶片尺寸封裝之GaN功率電晶體。
各種不同的電路可藉由將本發明的多重主動元件積體於一矽基材上而形成。舉例而言，本發明的GaN電晶體可以半橋接或全橋接組態被積體至一矽基材上。本發明的GaN功率電晶體亦可藉由在相同矽基材上之較小的驅動器電晶體予以驅動。
以上的說明與圖示僅被認為是本發明的一特定實施例的例證，其達成本文中說明的特徵與優點。本發明的修飾與置換可以做出。因此，本文中說明之本發明的實施例不被認為是前述說明與圖示的限制。
2‧‧‧元件/加強模式GaN電晶體
10‧‧‧矽基材
12‧‧‧側壁
13‧‧‧主動(元件)區
14‧‧‧銲料凸塊
15‧‧‧銅跡線
16‧‧‧聚醯亞胺鈍化體/額外層
17‧‧‧印刷電路板
19‧‧‧散熱槽
20‧‧‧鈍化層
21‧‧‧AlN(種晶)層
22‧‧‧AlGaN/GaN異質接面結構

Claims (10)

  1. 一種半導體元件，其包含：一矽基材；一絕緣層，其係置設在該矽基材上；一化合物半導體材料，其係置設在該絕緣層上方且包括一主動區；以及一頂表面，其包含：連接至該主動區的電氣接頭構件，該電氣接頭包括至少一閘極電極、至少一汲極電極、及至少兩個源極電極，其中該等源極電極中之一者係使用作為一凱氏(Kelvin)接頭；以及一第一鈍化材料，其中該鈍化材料為氮化矽、二氧化矽，或二者的組合，其中該主動區之邊緣被移除且以該第一鈍化材料填充，來與絕緣材料一同形成該半導體元件之絕緣外部側壁。
  2. 如請求項1之元件，其中該化合物半導體材料係由各種不同的層所形成，包含銦、鎵、氮，以及鋁的組合。
  3. 如請求項1之元件，其中該元件為一加強模式電晶體。
  4. 如請求項2之元件，其中該元件為一加強模式氮化鎵(GaN)電晶體。
  5. 如請求項1之元件，其進一步包含由聚醯亞胺塑膠構成之第二鈍化材料。
  6. 如請求項1之元件，其進一步包含一散熱槽，其係直接 地架設於該矽基材的一第二表面而無一絕緣層介於該基材與該散熱槽之間。
  7. 如請求項1之元件，其中該電氣接頭包含一銲料凸塊，其係由銅、鉛、銀、銻與錫的各種組合所形成。
  8. 如請求項3之元件，其中多重主動元件被積體至該矽基材上。
  9. 如請求項3之元件，其中該等電晶體為半橋接或全橋接組態。
  10. 如請求項3之元件，其中該等電晶體係藉由在該相同矽基材上之較小的驅動器電晶體予以驅動。
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