JP6979610B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6979610B2 JP6979610B2 JP2021036585A JP2021036585A JP6979610B2 JP 6979610 B2 JP6979610 B2 JP 6979610B2 JP 2021036585 A JP2021036585 A JP 2021036585A JP 2021036585 A JP2021036585 A JP 2021036585A JP 6979610 B2 JP6979610 B2 JP 6979610B2
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- Prior art keywords
- semiconductor device
- nitride semiconductor
- terminals
- semiconductor chip
- die pad
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 414
- 150000004767 nitrides Chemical class 0.000 claims description 258
- 239000000758 substrate Substances 0.000 claims description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 54
- 229910052710 silicon Inorganic materials 0.000 claims description 54
- 239000010703 silicon Substances 0.000 claims description 54
- 239000000853 adhesive Substances 0.000 claims description 26
- 230000001070 adhesive effect Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 description 39
- 229910000679 solder Inorganic materials 0.000 description 32
- 238000010586 diagram Methods 0.000 description 23
- 238000002844 melting Methods 0.000 description 21
- 230000008018 melting Effects 0.000 description 21
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 238000004088 simulation Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005476 soldering Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 241001290864 Schoenoplectus Species 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Description
本発明者らは、「背景技術」の欄において記載した半導体装置に関し、以下の問題が生じることを見出した。
以下、本開示の実施の形態に係る半導体装置について、図面を参照しながら説明する。なお、以下の実施の形態は、いずれも本開示の一具体例を示すものであり、数値、形状、材料、構成要素、構成要素の配置位置及び接続形態などは、一例であり、本開示を限定するものではない。
まず、窒化物半導体チップ6の構成例について説明する。
からなるダイパッド10下面の収縮量はダイパッド材料の熱収縮量ΔLdに等しいと考えることができる。
2 シリコン基板
3 ボンディングワイヤ
4 InGaAlN層
4a 活性層
4b バッファ層
6 窒化物半導体チップ
6g ゲートパッド
6d ドレインパッド
6s ソースパッド
6t トランジスタ
8 接着剤
9 樹脂
10 ダイパッド
11 端子
11g ゲート端子
11d ドレイン端子
11s ソース端子
11ss ソースセンス端子
12g、12d、12s、12ss 電極
Claims (52)
- 第1の熱膨張係数のシリコン基板、および、前記シリコン基板の表面に接して形成されたInxGayAl1−x−yN層(0≦x≦1、0≦y≦1、0≦x+y≦1)を有する窒化物半導体チップと、
前記窒化物半導体チップの上面に設けられるゲートパッド、ソースパッドおよびドレインパッドを含む複数のパッドと、
前記第1の熱膨張係数よりも大きい第2の熱膨張係数を有し、Cuを含むダイパッドと、
前記窒化物半導体チップの裏面と前記ダイパッドとを接合する接着剤と、
ゲート端子、ソース端子およびドレイン端子を含む複数の端子と、
前記ゲート端子と前記ゲートパッド、前記ソース端子と前記ソースパッドおよび前記ドレイン端子と前記ドレインパッドを接続するボンディングワイヤと、を備える半導体装置であり、
前記半導体装置は、対向する2辺である第1の辺および第2の辺を有する矩形状のパッケージであり、
前記ゲート端子と前記ソース端子は、前記半導体装置の前記第1の辺に沿って配置され、
前記ドレイン端子は、前記半導体装置の前記第2の辺に沿って配置され、
前記ドレイン端子は、前記ダイパッドと離間しており、
前記半導体装置の平面視における前記第2の辺と前記ダイパッドの中心との距離は、前記第1の辺と前記ダイパッドの中心との距離よりも大きい
半導体装置。 - 前記ドレイン端子を相互に電気的に接続する第1電極を更に有する
請求項1に記載の半導体装置。 - 前記第1電極は、前記ダイパッドと同じ材料で構成される
請求項2に記載の半導体装置。 - 前記ソース端子と前記ダイパッドを電気的に接続する第2電極を更に有する
請求項1〜3のいずれか1項に記載の半導体装置。 - 前記第2電極は、前記ダイパッドと同じ材料で構成される
請求項4に記載の半導体装置。 - 前記ゲート端子に電気的に接続する第3電極を更に有する
請求項1〜5のいずれか1項に記載の半導体装置。 - 第3電極は、前記ダイパッドと同じ材料で構成される
請求項6に記載の半導体装置。 - 前記ゲート端子は、前記ダイパッドと離間している
請求項1〜7のいずれか1項に記載の半導体装置。 - 前記ソース端子と前記ドレイン端子とは、前記半導体装置の前記第1の辺および前記第2の辺に互いに排他的に配置される
請求項1〜8のいずれか1項に記載の半導体装置。 - 前記半導体装置の前記第1の辺と前記半導体装置の前記第2の辺は、同数の端子を有する
請求項1〜9のいずれか1項に記載の半導体装置。 - 前記半導体装置の前記第2の辺に沿って配置される4つの前記ドレイン端子を有する
請求項1〜10のいずれか1項に記載の半導体装置。 - 前記半導体装置の前記第1の辺に沿って配置されるソースセンス端子を更に有する
請求項1〜11のいずれか1項に記載の半導体装置。 - 前記ソースセンス端子は、前記ダイパッドと離間している
請求項12に記載の半導体装置。 - 前記窒化物半導体チップは、対向する2辺である第1の辺および第2の辺を有し、
前記窒化物半導体チップの前記第1の辺は、前記半導体装置の第1の辺と平行であり、
前記窒化物半導体チップの前記第2の辺は、前記半導体装置の第2の辺と平行であり、
前記複数のパッドは、前記窒化物半導体チップの前記第1の辺および前記第2の辺に配置される
請求項1〜13のいずれか1項に記載の半導体装置。 - 前記ソースパッドは、前記窒化物半導体チップの前記第1の辺に沿って配置され、
前記ドレインパッドは、前記窒化物半導体チップの前記第2の辺に沿って配置される
請求項14に記載の半導体装置。 - 1つの前記ソース端子と前記ソースパッドとの間は、複数の前記ボンディングワイヤにより接続される
請求項1〜15のいずれか1項に記載の半導体装置。 - 複数の前記ソース端子のそれぞれに同じ数のボンディングワイヤが接続される
請求項16に記載の半導体装置。 - 1つの前記ソースセンス端子と前記ソースパッドとの間は、複数のボンディングワイヤにより接続される
請求項12または13に記載の半導体装置。 - 1つの前記ドレイン端子と前記ドレインパッドとの間は、複数の前記ボンディングワイヤにより接続される
請求項1〜18のいずれか1項に記載の半導体装置。 - 前記ダイパッドの対向する2つの主面のうち前記窒化物半導体チップと接合されていない主面は、前記半導体装置から露出している
請求項1〜19のいずれか1項に記載の半導体装置。 - 前記複数の端子は、前記矩形状のパッケージの側面と実質的に面一である
請求項1〜20のいずれか1項に記載の半導体装置。 - 前記半導体装置の平面視において前記複数の端子のサイズは互いに等しい
請求項1〜21のいずれか1項に記載の半導体装置。 - 前記半導体装置の平面視において、前記半導体装置の前記第1の辺に設けられる前記複数の端子と、
前記半導体装置の前記第2の辺に設けられる前記複数の端子とは、互いに線対称に設けられている
請求項1〜22のいずれか1項に記載の半導体装置。 - 前記半導体装置の前記第1の辺に設けられる前記複数の端子の間の距離と前記半導体装置の前記第2の辺に設けられる前記複数の端子の間の距離とが等しい
請求項1〜23のいずれか1項に記載の半導体装置。 - 前記ダイパッドに接続されるボンディングワイヤを備えない
請求項1〜24のいずれか1項に記載の半導体装置。 - 前記窒化物半導体チップの厚みは0.250mm以上、0.35mm以下である
請求項1〜25のいずれか1項に記載の半導体装置。 - 前記ダイパッドの厚さtm(mm)と前記窒化物半導体チップの長辺の長さL(mm)とは、tm ≧2.00×10−3×L2+b(b>0)の関係を満たす
請求項1〜26のいずれか1項に記載の半導体装置。 - 第1の熱膨張係数のシリコン基板、および、前記シリコン基板の表面に接して形成されたInxGayAl1−x−yN層(0≦x≦1、0≦y≦1、0≦x+y≦1)を有し、厚みが0.250mm以上、0.35mm以下の窒化物半導体チップと、
前記窒化物半導体チップの上面に設けられるゲートパッド、ソースパッドおよびドレインパッドを含む複数のパッドと、
前記第1の熱膨張係数よりも大きい第2の熱膨張係数を有し、Cuを含むダイパッドと、
前記窒化物半導体チップの裏面と前記ダイパッドとを接合する接着剤と、
ゲート端子、複数のソース端子および複数のドレイン端子を含む複数の端子と、
前記複数のソース端子と前記ダイパッドを電気的に接続する第1電極と、
を備える半導体装置であり、前記半導体装置は、対向する2辺である第1の辺および第2の辺を有する矩形状のパッケージであり、
前記ゲート端子と前記複数のソース端子は、前記半導体装置の前記第1の辺に沿って配置され、
前記複数のドレイン端子は、前記半導体装置の前記第2の辺に沿って配置され、
前記複数のドレイン端子は、前記ダイパッドと離間しており、
平面視における前記第2の辺と前記ダイパッドの中心との距離は、前記第1の辺と前記ダイパッドの中心との距離よりも大きく、
前記複数のソース端子のぞれぞれは、第1の複数のボンディングワイヤを介して前記ソースパッドと接続され、前記第1の複数のボンディングワイヤのそれぞれの一端は、前記半導体装置の平面視で前記複数のソース端子と重なる位置に設けられ、
前記複数のドレイン端子のそれぞれは、第2の複数のボンディングワイヤを介して前記ドレインパッドと接続され、前記第2の複数のボンディングワイヤのそれぞれの一端は、前記半導体装置の平面視で前記複数のドレイン端子と重なる位置に設けられている
半導体装置。 - 前記複数のドレイン端子を相互に電気的に接続する第2電極を更に有する
請求項28に記載の半導体装置。 - 前記第2電極は、前記ダイパッドと同じ材料で構成される
請求項29に記載の半導体装置。 - 前記第1電極は、前記ダイパッドと同じ材料で構成される
請求項28〜30のいずれか1項に記載の半導体装置。 - 前記ゲート端子に電気的に接続する第3電極を更に有する
請求項28〜31のいずれか1項に記載の半導体装置。 - 第3電極は、前記ダイパッドと同じ材料で構成される
請求項32に記載の半導体装置。 - 前記ゲート端子は、前記ダイパッドと離間している
請求項28〜33のいずれか1項に記載の半導体装置。 - 前記複数のソース端子と前記複数のドレイン端子とは、前記半導体装置の前記第1の辺および前記第2の辺に互いに排他的に配置される
請求項28〜34のいずれか1項に記載の半導体装置。 - 前記半導体装置の前記第1の辺と前記半導体装置の前記第2の辺は、同数の端子を有する
請求項28〜35のいずれか1項に記載の半導体装置。 - 前記半導体装置の前記第2の辺に沿って配置される4つの前記複数のドレイン端子を有する
請求項28〜36のいずれか1項に記載の半導体装置。 - 前記半導体装置の前記第1の辺に沿って配置されるソースセンス端子を更に有する
請求項28〜37のいずれか1項に記載の半導体装置。 - 前記ソースセンス端子は、前記ダイパッドと離間している
請求項38に記載の半導体装置。 - 前記窒化物半導体チップは、対向する2辺である第1の辺および第2の辺を有し、
前記窒化物半導体チップの前記第1の辺は、前記半導体装置の第1の辺と平行であり、
前記窒化物半導体チップの前記第2の辺は、前記半導体装置の第2の辺と平行であり、
前記複数のパッドは、前記窒化物半導体チップの前記第1の辺および前記第2の辺に配置される
請求項28〜39のいずれか1項に記載の半導体装置。 - 前記ソースパッドは、前記窒化物半導体チップの前記第1の辺に沿って配置され、
前記ドレインパッドは、前記窒化物半導体チップの前記第2の辺に沿って配置される
請求項40に記載の半導体装置。 - 前記複数のソース端子のそれぞれに同じ数のボンディングワイヤが接続される
請求項28〜41のいずれか1項に記載の半導体装置。 - 1つの前記ソースセンス端子と前記ソースパッドとの間は、複数のボンディングワイヤにより接続される
請求項38または39に記載の半導体装置。 - 前記ダイパッドの対向する2つの主面のうち前記窒化物半導体チップと接合されていない主面は、前記半導体装置から露出している
請求項28〜43のいずれか1項に記載の半導体装置。 - 前記複数の端子は、前記矩形状のパッケージの側面と実質的に面一である
請求項28〜44のいずれか1項に記載の半導体装置。 - 前記半導体装置の平面視において前記複数の端子のサイズは互いに等しい
請求項28〜45のいずれか1項に記載の半導体装置。 - 前記半導体装置の平面視において、前記半導体装置の前記第1の辺に設けられる前記複数の端子と、
前記半導体装置の前記第2の辺に設けられる前記複数の端子とは、互いに線対称に設けられている
請求項28〜46のいずれか1項に記載の半導体装置。 - 前記半導体装置の前記第1の辺に設けられる前記複数の端子の間の距離と前記半導体装置の前記第2の辺に設けられる前記複数の端子の間の距離とが等しい
請求項28〜47のいずれか1項に記載の半導体装置。 - 前記ダイパッドに接続されるボンディングワイヤを備えない
請求項28〜48のいずれか1項に記載の半導体装置。 - 前記ソースパッドに接続する全てのボンディングワイヤは、前記ソース端子または前記ソースセンス端子に接続される
請求項38に記載の半導体装置。 - 前記窒化物半導体チップは、前記ダイパッドの中央部に接合されている
請求項28〜49のいずれか1項に記載の半導体装置。 - 前記ダイパッドの厚さtm(mm)と前記窒化物半導体チップの長辺の長さL(mm)とは
tm ≧2.00×10−3×L2+b(b>0)の関係を満たす
請求項28〜51のいずれか1項に記載の半導体装置。
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