CN102074539A - 半导体器件的封装 - Google Patents

半导体器件的封装 Download PDF

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Publication number
CN102074539A
CN102074539A CN2010105523479A CN201010552347A CN102074539A CN 102074539 A CN102074539 A CN 102074539A CN 2010105523479 A CN2010105523479 A CN 2010105523479A CN 201010552347 A CN201010552347 A CN 201010552347A CN 102074539 A CN102074539 A CN 102074539A
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China
Prior art keywords
semiconductor layer
lead
isolated external
external conductors
semiconductor element
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CN2010105523479A
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English (en)
Inventor
B·S·谢尔顿
M·K·帕比兹
朱廷刚
刘琳蔺
B·佩雷斯
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Power Integrations Inc
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Power Integrations Inc
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Publication of CN102074539A publication Critical patent/CN102074539A/zh
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Abstract

一种封装的半导体器件，包含装配在引线框端部的半导体管芯。多个间隔开的外部导体从所述端部延伸，并且至少一个外部导体在其一末端具有接合导线柱，使得一条接合导线在接合导线柱和半导体管芯之间延伸。该封装器件还包括外壳，其包围半导体管芯、端部、接合导线和接合导线柱，从而得到绝缘的封装器件。

Description

半导体器件的封装
相关申请的引用
本申请是2005年1月10日提交的、申请号为11/032,666的美国专利申请的部分接续申请，其整篇文件在此一体引用。本申请涉及2004年2月17日提交的、已经转让给共同受让人的申请号为10/780,363的美国专利申请，并且在此一体引用。
技术领域
本发明涉及封装的半导体器件，特别是涉及一种引线框和包含大功率氮化镓基半导体器件的封装。
背景技术
诸如二极管、场效应晶体管等半导体器件通常形成在半导体晶片/衬底上，所述半导体晶片/衬底随后切割成包含独立器件或集成电路的管芯(die)。所述管芯具有金属化的垫或其它电极，其与晶体管的源区、栅区和漏区或是二极管的阳极和阴极电连接。大多数器件形成在硅(Si)、碳化硅(SiC)和砷化镓(GaAs)半导体晶片上。所有这些衬底都是导电的，使得形成在这些晶片上的器件都是“垂直器件”，意味它们在管芯顶面和底面都有电连接。为了能电连接外部电子电路，半导体管芯被装配进由铜引线框和密封用环氧树脂形成的封装体中。用于功率半导体器件的最常用的封装体的实例是如TO-220、TO-247、DPAK、D2PAK、TO-263或其他封装规格等众所周知的工业标准。
正如本领域中所周知的，管芯被安装在引线框上，所述引线框进而提供管芯和封装体底面，以及密封的环氧树脂顶部的安装支架(在TO220、TO247的例子中)，还有到多个外部引线中至少一个之间的电连接。其它电衬垫利用导线接合连接到其余的外部引线。在封装的最后，管芯和引线框的部件都被绝缘的环氧树脂密封。由于这种结构，在许多应用中最终的用户需要使用附加元件在封装体和外部硬件(热沉)或其它设备之间提供足够的电绝缘，这会增加最终产品的成本。
授权给Ishizaka等人的美国专利6,847,058公开了一种作为半导体器件的MOSFET。在Ishizaka的专利附图2和4中，显示所述器件具有一穿过漏极(D)而安装在端部(header)13上表面上的管芯1。所有三条引线，即源(S)、栅(G)和漏(D)都与管芯1电连接。所述源(S)和栅(G)通过接合导线16连接，而D是管芯1的背面，并且一直与引线框电性和机械连接，从而器件背面需要电绝缘。
随着用于光电子、功率和其它用途的氮化镓半导体器件的发展，提出了用于这些器件的新的封装需求，然而，生产经济性的考虑和消费者对管脚兼容性的需要要求这种封装还更符合工业上公认的封装形式。
发明内容
本发明的一个目的是在半导体器件的封装中提供改善的电气性能。
本发明的另一个目的是提供一种半导体器件封装的简化和生产经济的组件。
本发明还有另一个目的是提供一种符合工业上公认封装形式的半导体器件的封装。
本发明另外的目的、优点和新特点通过本文的公开对本领域技术人员来说将会变得明了，包含接下来的具体说明和实施本发明。虽然本发明在下面描述了关于优选的实施例，但是应当明白本发明并不仅限于此。
简要和概括地，本发明提供了一种封装的半导体器件，包含装配在引线框端部的半导体管芯。多个间隔开的外部导体从封装体延伸出来，并且所述外部导体中的至少一个在其一个末端上具有接合导线柱，使接合导线在接合导线柱和半导体管芯之间延伸。所述封装的器件还包括一外壳，其包围所述半导体管芯、端部、接合导线和接合导线柱。
附图说明
本发明的这些以及其它的特征和优点通过考虑结合附图的情况下，参考下文的详细说明可以得到更好的理解和更充分的认识，其中：
附图1A、1B和1C以及1D是根据本发明一个实施例的半导体器件封装顺序的透视图，其得到最终产品是附图1D中的封装的半导体器件。
附图2是根据本发明一优选实旋例的具有附图1A-1D中半导体管芯的半导体二极管的半导体结构的不连续的横截面详图。
附图3是根据本发明一优选实施例的具有附图1A-1D中半导体管芯的半导体晶体管的半导体结构的不连续的横截面详图。
具体实施方式
现在描述本发明的细节，包括其中典型的方面及其实施例。参考附图和以下说明，相似的标记数字用于标识相同或功能相似的部件，旨在以一种高度简单概括的方式说明典型实施例的主要特征。此外，附图并没有想要描述出实际实施例的每一个特征和图示部件的相对尺寸，并且也没有按照比例绘图。
参考附图1A-1D，其示出了一组根据本发明的半导体器件100的封装顺序的不连续的透视图。附图1A展示了一个典型的用于封装的引线框。其包括安装支架110和端部104组成，端部104还被用作管芯的安装载体。封装器件100还包含相互平行的并且通过额外金属112保持在一起的外部引线或电极101、102和103。所述引线102通过金属延伸部113与端部104永久地连接。每一个引线103和101还分别包含导线接合垫106和107。附图1B进一步包含一装配在端部104上的半导体管芯105。如图1B所示，接合导线108和109用于在半导体管芯105上表面的有源区和引线103、101上的导线接合垫106、107之间分别提供电连接。由于衬底的绝缘属性，管芯和端部104之间没有电连接，因此没有到引线102和安装支架110的电连接。
附图1C示出了由铸模的塑料材料如环氧树脂构成的外壳111，其分别密封管芯105、导线108和109以及包括接合垫106和107的引线101和103的一部分。外壳111也起了在切除过量的和/或没用的金属112时向引线101、103提供机械支撑的作用，如附图1D所示。附图1D示出了最终封装的半导体器件100，其中多余的金属112被切除，从而引线101、102和103独立开来而不再通过金属112相互连接。并且，通过除去多余的金属112，外侧的两条引线101和103不电连接到端部104和安装支架110。因此，附图1D中最终密封的封装半导体器件100提供管芯105和引线框之间完全的绝缘。虽然没有显示出来，中间的引线102可以选择地被修整。
值得注意的是，端部104的背面(未示出)保持暴露从而提供良好的热接触。这允许直接在端部104的背面安装另外的元件例如外部热沉，这可以转移走正常操作状况下管芯中产生的热量。现有技术的器件中，半导体封装器件的背面与管芯之间没有隔离开，器件和热沉之间需要插入一绝缘体如聚酯薄膜(Mylar)，从而避免两者之间的电连接。然而，在本发明中，绝缘封装器件的结果就是，由于引线101和103是悬空的，并且明显不与密封的封装器件100的背面连接，因而不需要这种绝缘体。
参考附图2，其示出了根据本发明优选的实施例半导体GaN基二极管结构200的不连续的横截面详图，其用作附图1中的管芯104。所述结构200包含大功率氮化镓基二极管202，其优选为在蓝宝石(Al2O3)衬底204上制作。所述二极管202包括在底部的高掺杂(n+)层201和在顶部的低掺杂(n-)层203。如图所示，阳极206形成在低掺杂(n-)层203上，且阴极207仅形成在高掺杂(n+)层201的部分上。电介质层208用作钝化层来保护管芯与外部元素(湿气、气体)隔开，其还在两个接触之间提供电性绝缘。阳极206和阴极207同时还作为管芯自身上的接合垫。
参考附图3，其示出了根据本发明另一优选实施例GaN基场效应晶体管(FET)结构300的不连续的横截面详图，其用作附图1中管芯104。所述结构300包含大功率氮化镓基FET 302，其在蓝宝石(Al2O3)衬底304上制作。所述FET302包含在底部的GaN层301和在顶部的AlGaN层303。如图3所示，栅(G)电极306形成在AlGaN层303上，源(S)和漏(D)电极305和307分别穿过AlGaN层303形成在GaN层301上。电介质层308用作钝化层来保护管芯与外部元件隔开，其还在接触之间提供电性绝缘。值得注意的是，附图2和3仅仅只是出于说明的目的，而并非实际比例。
尽管所述展示的GaN基器件是在蓝宝石衬底上制作的，但是对于本领域技术人员来说，其公知的是也可使用如硅(Si)、碳化硅(SiC)等其它半导体衬底。与碳化硅衬底相比，蓝宝石衬底提供了经济效益，同时相比在硅衬底上制作的器件又能有较高的品质。加之蓝宝石衬底是电绝缘的，进而在这种衬底上制作的器件不再是垂直型器件。与商用器件不同，在蓝宝石衬底上制作的氮化镓基器件具有在管芯的上表面上的所有接合垫。如果先前工艺步骤包括背面的金属化，那么通过环氧树脂或焊料附着在蓝宝石上的完全制作好的管芯将有益于某些应用。使接合垫和外部引线电连接，而不与引线框连接，保持管芯与框架电绝缘。之后管芯使用环氧树脂密封，而引线框无用的部分被切除。
多条导线从管芯的接合垫延伸到外部引线(不与端部连接)也包含在本发明的范围之中。因此，在二极管的例子中，可以有多于一条接合导线从阳极引出，以及多于一条接合导线从阴极引出，这取决于管芯结构和所用接合导线的类型。此外，多个GaN基器件还可以被结合到一个封装体中，包括二极管和FET的任意组合以满足集成和产业需要。可以在这些器件之间以及器件和与端部相连的外部引线之间形成导线接合连接。任意数量的管芯可以包含在封装体中，如果他们适合所分配的空间。
在优选的实施例中，用了两个10密耳(10mil)的铝导线。然而，为了高电涌电流能力，优选使用15密耳的铝导线。在另一实施例中，所述导线可以由金构成，并且小至2密耳。
本发明这里记载的方法和器件可以以这种方式与器件和/或其它半导体器件结构相结合应用，从而改善其可靠性、可控性和稳定性。因此本发明应用于采用台面结构来限定有源区的任意半导体器件，特别是III-V族半导体器件。
虽然本发明已经描述和记载了一种用于氮化镓基结构的封装的半导体器件，但并不是要限定到所示的细节里，因为不脱离本发明精神可以做出各种变型和结构变化。此外，对于本领域技术人员来说，不脱离本发明的精神和范围对本发明的设备和方法可以做出各种变型和变体是显而易见的。因此，在随附的权利要求书及与其等价物的范围内，本发明旨在提供涵盖对本发明的变型和变体。

Claims (20)

1.一种绝缘的半导体封装器件，包括：
引线框，其包括与安装支架相连接的端部；
至少一个半导体管芯，其安装到所述引线框的所述端部；
至少两个间隔开的外部导体，其从所述端部延伸使得所述至少两个间隔开的外部导体不与所述引线框的所述端部电连接，所述至少两个间隔开的外部导体中的一个与所述至少两个间隔开的外部导体中的另一个基本上平行；
在所述管芯和所述至少两个间隔开的外部导体中的不与所述引线框电连接的一个之间电连接的至少第一接合导线，以及在所述管芯和所述至少两个间隔开的外部导体中的不与所述引线框的所述端部电连接的另一个之间电连接的至少第二接合导线，使得所述管芯与所述引线框电绝缘以及
外壳，其包围所述半导体管芯、所述至少第一键合导线和所述至少第二接合导线，所述外壳向所述至少两个间隔开的外部导体提供机械支撑。
2.如权利要求1所述的器件，其中所述至少两个间隔开的外部导体中的所述一个在一末端具有第一导线接合柱，并且所述至少两个间隔开的外部导体中的所述另一个在一末端具有第二导线接合柱。
3.如权利要求2所述的器件，其中所述至少第一接合导线从所述至少一个半导体管芯延伸到所述第一导线接合柱，并且所述第二接合导线从所述管芯延伸到所述第二导线接合柱。
4.如权利要求3所述的器件，其中所述外壳包围所述第一导线键合柱和所述第二导线接合柱。
5.如权利要求1所述的器件，其中所述外壳是模制的塑料材料。
6.如权利要求1所述的器件，进一步包括第三间隔开的外部导体，其平行于所述至少两个间隔开的外部导体延伸，其中所述第三间隔开的外部导体通过金属与所述端部连接。
7.如权利要求1所述的器件，其中所述至少第一键合导线和所述至少第二接合导线具有至少5密耳的厚度。
8.如权利要求1所述的器件，其中所述至少一个半导体管芯通过焊料或导热性环氧树脂直接附接到所述外壳。
9.如权利要求1所述的器件，其中所述至少一个半导体管芯是至少一个二极管。
10.如权利要求1所述的器件，其中所述至少一个半导体管芯是至少一个晶体管。
11.如权利要求1所述的器件，其中所述半导体管芯是至少一个二极管和至少一个晶体管的组合。
12.如权利要求1所述的器件，其中所述至少一个半导体管芯具有顶面和底面，所述预面包括平面半导体层，并且所述底面包括蓝宝石衬底。
13.如权利要求12所述的器件，其中所述平面半导体层包括下半导体层和上半导体层，所述上半导体层布置在所述下半导体层的一部分之上，所述下半导体层和所述上半导体层具有相同的导电类型，并且所述下半导体层比所述上半导体层更高地掺杂。
14.如权利要求13所述的器件，其中所述上半导体层和所述下半导体层由氮化镓基材料构成。
15.如权利要求13所述的器件，其中所述至少一个半导体管芯是至少一个二极管，其包含形成在上半导体层上的阳极和形成在下半导体层一部分上的阴极。
16.如权利要求15所述的器件，进一步包括形成在没有阳极和阴极的下半导体层和上半导体层上的电介质层。
17.如权利要求13所述的器件，其中所述上半导体层由氮化铝镓构成，且所述下半导体层由氮化镓构成。
18.如权利要求13所述的器件，其中所述至少一个半导体管芯是至少一个晶体管，其包含形成在所述上半导体层上的栅电极、穿过所述上半导体层形成在所述下半导体层上的源电极和漏电极。
19.如权利要求17所述的器件，进一步包括电介质层，其形成在没有所述栅电极、所述源电极和所述漏电极的上半导体层上。
20.如权利要求1所述的器件，其中所述端部的背面提供直接热接触。
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