TWI525397B - 量測方法和裝置、微影裝置和器件製造方法 - Google Patents
量測方法和裝置、微影裝置和器件製造方法 Download PDFInfo
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Description
本發明係關於可用於(例如)藉由微影技術來製造器件之量測方法及裝置,且係關於使用微影技術來製造器件之方法。
微影裝置為將所要圖案施加至基板上(通常施加至基板之目標部分上)的機器。微影裝置可用於(例如)積體電路(IC)之製造中。在該情況下,圖案化器件(其或者被稱作光罩或主光罩)可用以產生待形成於IC之個別層上的電路圖案。可將此圖案轉印至基板(例如,矽晶圓)上之目標部分(例如,包括晶粒之一部分、一個晶粒或若干晶粒)上。圖案之轉印通常係經由成像至提供於基板上之輻射敏感材料(抗蝕劑)層上。一般而言,單一基板將含有經順次圖案化之鄰近目標部分的網路。已知微影裝置包括:所謂的步進器,其中藉由一次性將整個圖案曝光至目標部分上來照射每一目標部分;及所謂的掃描器,其中藉由在給定方向("掃描"方向)上經由輻射光束而掃描圖案同時平行或反平行於此方向而同步地掃描基板來照射每一目標部分。亦有可能藉由將圖案壓印至基板上而將圖案自圖案化器件轉印至基板。
在微影過程中,頻繁地需要進行所形成之結構之量測,例如,用於過程控制及驗證。已知用於進行該等量測之各種工具,其包括:掃描電子顯微鏡,掃描電子顯微鏡通常用以量測臨界尺寸(CD);及專用工具,專用工具用以量測疊對(器件中之兩個層之對準精確度)。最近,各種形式之散射計經開發用於微影領域中。此等器件將輻射光束引導至目標上且量測經散射輻射之一或多個性質-例如,在單一反射角下作為波長之函數的強度;在一或多個波長下作為經反射角之函數的強度;或作為經反射角之函數的偏振-以獲得可藉以判定目標之所關注性質的"光譜"。可藉由各種技術而執行所關注性質之判定:例如,藉由迭代方法(諸如,嚴密耦合波分析或有限元方法)而重新建構目標結構;庫搜尋;及主成份分析。
在當前可用散射計中,目標為相對較大(例如,40μm乘40μm)光柵,且量測光束產生小於光柵之光點(亦即,光柵為未填充滿的)。此簡化目標之重新建構,因為目標可被視為無限的。然而,將需要減少目標之尺寸(例如,減少至10μm乘10μm或甚至5μm乘5μm),以便可將目標定位於產品特徵當中,而非切割道中。將目標置放於產品特徵當中會增加量測精確度,因為更小目標以更類似於產品特徵之方式而受到過程變化影響,且因為可能需要更少內插來判定實際特徵位點處之過程變化的效應。
然而,為了減少目標尺寸,需要減少量測光點之對應尺寸,此係由繞射效應及載運經量測基板之平台的定位精確度限制,且因此,需要大體上修改及/或重新設計現有量測器件。
需要提供一種(例如)可對更小目標進行量測之改良型量測器件。
根據本發明之一態樣,提供一種經組態以量測基板上之目標之性質的量測裝置,裝置包括:第一源,第一源經組態以發射第一照明輻射光束;第二源,第二源經組態以發射第二照明輻射光束;光束選擇器件,光束選擇器件經組態以選擇第一照明光束及第二照明光束中之一者作為量測輻射光束;接物鏡,接物鏡經組態以將量測光束引導至基板上之目標上且收集由目標所繞射之輻射;感測器,感測器經組態以偵測接物鏡之光瞳平面中的角度解析光譜。
根據本發明之一態樣,提供一種微影裝置,微影裝置包括:照明光學系統,照明光學系統經配置以照明圖案;投影光學系統,投影光學系統經配置以將圖案之影像投影至基板上;及量測器件,量測器件經組態以量測基板上之目標之性質,器件包括:第一源,第一源經組態以發射第一照明輻射光束;第二源,第二源經組態以發射第二照明輻射光束;光束選擇器件,光束選擇器件經組態以選擇第一照明光束及第二照明光束中之一者作為量測輻射光束;接物鏡,接物鏡經組態以將量測光束引導至基板上之目標上且收集由目標所繞射之輻射;感測器,感測器經組態以偵測接物鏡之光瞳平面中的角度解析光譜。
根據本發明之一態樣,提供一種量測基板上之目標之性質的方法,方法包括:產生第一照明光束或第二照明光束中之至少一者,第一照明光束與第二照明光束在空間範圍及角度範圍中之至少一者方面不同;選擇第一照明光束及第二照明光束中之一者作為量測光束且將量測光束引導至目標上;使用接物鏡而收集自標號器所繞射之輻射;偵測接物鏡之光瞳平面中的角度解析光譜。
現將參看隨附示意性圖式而僅藉由實例來描述本發明之實施例,在該等圖式中,對應參考符號指示對應部分。
圖1示意性地描繪微影裝置LA。裝置包括:照明系統(照明器)IL,其經組態以調節輻射光束B(例如,UV輻射或DUV輻射);圖案化器件支撐件或支撐結構(例如,光罩台)MT,其經建構以支撐圖案化器件(例如,光罩)MA且連接至經組態以根據某些參數來精確地定位圖案化器件之第一定位器PM;基板台(例如,晶圓台)WT,其經建構以固持基板(例如,塗覆抗蝕劑之晶圓)W且連接至經組態以根據某些參數來精確地定位基板之第二定位器PW;及投影系統(例如,折射投影透鏡系統)PS,其經組態以將由圖案化器件MA賦予至輻射光束B之圖案投影至基板W之目標部分C(例如,包括一或多個晶粒)上。
照明系統可包括用於引導、成形或控制輻射之各種類型的光學組件,諸如,折射、反射、磁性、電磁、靜電或其他類型之光學組件,或其任何組合。
圖案化器件支撐件以視圖案化器件之定向、微影裝置之設計及其他條件(諸如,圖案化器件是否固持於真空環境中)而定的方式來固持圖案化器件。圖案化器件支撐件可使用機械、真空、靜電或其他夾持技術來固持圖案化器件。圖案化器件支撐件可為(例如)框架或台,其可根據需要而為固定或可移動的。圖案化器件支撐件可確保圖案化器件(例如)相對於投影系統而處於所要位置。可認為本文對術語"主光罩"或"光罩"之任何使用均與更通用之術語"圖案化器件"同義。
本文所使用之術語"圖案化器件"應被廣泛地解釋為指代可用以在輻射光束之橫截面中向輻射光束賦予圖案以便在基板之目標部分中形成圖案的任何器件。應注意,例如,若被賦予至輻射光束之圖案包括相移特徵或所謂的輔助特徵,則圖案可能不會精確地對應於基板之目標部分中的所要圖案。通常,被賦予至輻射光束之圖案將對應於目標部分中所形成之器件(諸如,積體電路)中的特定功能層。
圖案化器件可為透射或反射的。圖案化器件之實例包括光罩、可程式化鏡面陣列,及可程式化LCD面板。光罩在微影術中為熟知的,且包括諸如二元交變相移及衰減相移之光罩類型,以及各種混合光罩類型。可程式化鏡面陣列之一實例使用小鏡面之矩陣配置,該等小鏡面中之每一者可個別地傾斜,以便在不同方向上反射入射輻射光束。傾斜鏡面將圖案賦予於由鏡面矩陣所反射之輻射光束中。
本文所使用之術語"投影系統"應被廣泛地解釋為涵蓋任何類型之投影系統,包括折射、反射、反射折射、磁性、電磁及靜電光學系統或其任何組合,其適合於所使用之曝光輻射,或適合於諸如浸沒液體之使用或真空之使用的其他因素。可認為本文對術語"投影透鏡"之任何使用均與更通用之術語"投影系統"同義。
如此處所描繪,裝置為透射類型(例如,使用透射光罩)。或者,裝置可為反射類型(例如,使用如以上所提及之類型的可程式化鏡面陣列,或使用反射光罩)。
微影裝置可為具有兩個(雙平台)或兩個以上基板台(及/或兩個或兩個以上光罩台)的類型。在該等"多平台"機器中,可並行地使用額外台,或可在一或多個台上進行預備步驟,同時將一或多個其他台用於曝光。
微影裝置亦可為如下類型:其中基板之至少一部分可由具有相對較高折射率之液體(例如,水)覆蓋,以便填充投影系統與基板之間的空間。亦可將浸沒液體施加至微影裝置中之其他空間,例如,光罩與投影系統之間。浸沒技術在此項技術中被熟知用於增加投影系統之數值孔徑。如本文所使用之術語"浸沒"不意謂諸如基板之結構必須浸漬於液體中,而是僅意謂液體在曝光期間位於投影系統與基板之間。
參看圖1,照明器IL自輻射源SO接收輻射光束。舉例而言,當輻射源為準分子雷射時,輻射源與微影裝置可為單獨實體。在該等情況下,不認為輻射源形成微影裝置之一部分,且輻射光束借助於包括(例如)適當引導鏡面及/或光束放大器之光束傳送系統BD而自輻射源SO傳遞至照明器IL。在其他情況下,例如,當輻射源為汞燈時,輻射源可為微影裝置之整體部分。輻射源SO及照明器IL連同光束傳送系統BD(在需要時)可被稱作輻射系統。
照明器IL可包括用於調整輻射光束之角強度分布的調整器AD。通常,可調整照明器之光瞳平面中之強度分布的至少外部徑向範圍及/或內部徑向範圍(通常分別被稱作σ外部及σ內部)。此外,照明器IL可包括各種其他組件,諸如,積光器IN及聚光器CO。照明器可用以調節輻射光束,以在其橫截面中具有所要均一性及強度分布。
輻射光束B入射於被固持於圖案化器件支撐件(例如,光罩台MT)上之圖案化器件(例如,光罩)MA上,且由圖案化器件圖案化。在橫穿圖案化器件(例如,光罩)MA後,輻射光束B穿過投影系統PS,投影系統PS將光束聚焦至基板W之目標部分C上。借助於第二定位器PW及位置感測器IF(例如,干涉量測器件、線性編碼器、2-D編碼器或電容性感測器),基板台WT可精確地移動,例如,以便在輻射光束B之路徑中定位不同目標部分C。類似地,第一定位器PM及另一位置感測器(其未在圖1中被明確地描繪)可用以(例如)在自光罩庫之機械擷取之後或在掃描期間相對於輻射光束B之路徑來精確地定位圖案化器件(例如,光罩)MA。一般而言,可借助於形成第一定位器PM之一部分的長衝程模組(粗略定位)及短衝程模組(精細定位)來實現圖案化器件支撐件(例如,光罩台)MT之移動。類似地,可使用形成第二定位器PW之一部分的長衝程模組及短衝程模組來實現基板台WT之移動。在步進器(與掃描器相對)之情況下,圖案化器件支撐件(例如,光罩台)MT可僅連接至短衝程致動器,或可為固定的。
可使用光罩對準標記M1、M2及基板對準標記P1、P2來對準圖案化器件(例如,光罩)MA及基板W。儘管如所說明之基板對準標記佔用專用目標部分,但其可位於目標部分之間的空間中(此等被稱為切割道對準標記)。類似地,在一個以上晶粒提供於圖案化器件(例如,光罩)MA上之情形中,光罩對準標記可位於該等晶粒之間。在器件特徵當中,小對準標號器亦可包括於晶粒內,在該情況下,需要使標號器儘可能地小且無需任何與鄰近特徵不同之成像或處理條件。以下進一步描述偵測對準標號器之對準系統。
所描繪裝置可用於以下模式中之至少一者中:
1.在步進模式中,在將被賦予至輻射光束之整個圖案一次性投影至目標部分C上時,使圖案化器件支撐件(例如,光罩台)MT及基板台WT保持基本上靜止(亦即,單重靜態曝光)。接著,使基板台WT在X及/或Y方向上移位,使得可曝光不同目標部分C。在步進模式中,曝光場之最大尺寸限制單重靜態曝光中所成像之目標部分C的尺寸。
2.在掃描模式中,在將被賦予至輻射光束之圖案投影至目標部分C上時,同步地掃描圖案化器件支撐件(例如,光罩台)MT及基板台WT(亦即,單重動態曝光)。可藉由投影系統PS之放大率(縮小率)及影像反轉特性來判定基板台WT相對於圖案化器件支撐件(例如,光罩台)MT之速度及方向。在掃描模式中,曝光場之最大尺寸限制單重動態曝光中之目標部分的寬度(在非掃描方向上),而掃描運動之長度判定目標部分之高度(在掃描方向上)。
3.在另一模式中,在將被賦予至輻射光束之圖案投影至目標部分C上時,使圖案化器件支撐件(例如,光罩台)MT保持基本上靜止,從而固持可程式化圖案化器件,且移動或掃描基板台WT。在此模式中,通常使用脈衝式輻射源,且在基板台WT之每一移動之後或在掃描期間的順次輻射脈衝之間根據需要而更新可程式化圖案化器件。此操作模式可易於應用於利用可程式化圖案化器件(諸如,如以上所提及之類型的可程式化鏡面陣列)之無光罩微影術。
亦可使用對以上所描述之使用模式之組合及/或變化或完全不同的使用模式。
微影裝置LA為所謂的雙平台類型,其具有兩個基板台WTa、WTb及兩個台-曝光台及量測台-其間可交換基板台。儘管在曝光台處曝光一基板或一基板台,但可在量測台處將另一基板裝載至另一基板台上且可進行各種預備步驟。預備步驟可包括使用位準感測器LS而映射基板之表面控制,及使用對準感測器AS而量測基板上之對準標號器的位置。此致能裝置之產出率的實質增加。若位置感測器IF在基板台處於量測台以及處於曝光台時不能夠量測基板台之位置,則可提供第二位置感測器以使能夠在兩個台處追蹤基板台之位置。
如圖2所示,微影裝置LA形成微影單元LC(有時亦被稱作微影單元或叢集)之一部分,其亦包括用以對基板執行預曝光及後曝光過程之裝置。通常,此等裝置包括用以沈積抗蝕劑層之旋塗器SC、用以顯影經曝光抗蝕劑之顯影器DE、冷卻板CH,及烘焙板BK。基板處置器或機器人RO自輸入/輸出埠I/O1、I/O2拾取基板、在不同處理裝置之間移動基板,且接著將基板傳送至微影裝置之裝載盤LB。通常被共同地稱作軌道之此等器件係在軌道控制單元TCU的控制下,軌道控制單元TCU自身受監督控制系統SCS控制,監督控制系統SCS亦經由微影控制單元LACU而控制微影裝置。因此,不同裝置可經操作以最大化產出率及處理效率。
圖3中展示角度解析散射計。在此感測器中,由輻射源單元2(以下進一步描述)所發射之輻射使用透鏡系統12而聚焦穿過濾光器13及偏振器17、由部分反射表面16反射且經由顯微鏡接物鏡15而聚焦至基板W上,顯微鏡接物鏡15具有高數值孔徑(NA),較佳地為至少0.9且更佳地為至少0.95。浸沒感測器可甚至具有數值孔徑超過1之透鏡。透鏡系統12經配置以提供所要照明模式(例如,環形或習知的),且較佳地使得該模式之參數(例如,σinner
、σouter
或σ)為可調整的。經反射輻射接著透過部分反射表面16而進入偵測器18,以便偵測散射光譜。偵測器可位於處於透鏡系統15之焦距的背部投影式光瞳平面11中,然而,光瞳平面可代替地藉由輔助光學器件(未圖示)而再成像至偵測器上。光瞳平面為輻射之徑向位置界定基板上之入射角且角位界定輻射之方位角的平面。偵測器較佳地為二維偵測器,使得可量測基板目標之二維角散射光譜。偵測器18可為(例如)CCD或CMOS感測器陣列。
舉例而言,通常使用參考光束以量測入射輻射之強度。為了進行此過程,當輻射光束入射於光束分光器16上時,輻射光束之一部分透過光束分光器而作為朝向參考鏡面14之參考光束。參考光束接著投影至同一偵測器18之不同部分上。
偵測器18可量測經散射光在單一波長(或窄波長範圍)下之強度、單獨地在多個波長下之強度或在一波長範圍內所積分之強度。此外,偵測器可單獨地量測橫向磁偏振光及橫向電偏振光之強度,及/或橫向磁偏振光與橫向電偏振光之間的相位差。
基板W上之目標可為以光柵之形式的標號器。通常,在散射量測中,使用目標之散射量測資料以對其進行重新建構(例如,結合用以計算自週期性結構之光散射的方法而使用迭代技術(諸如,嚴密耦合波分析及有限元方法))。或者,迭代方法可由藉由模擬所獲得之光譜的庫搜尋(部分地)替換。然而,亦有可能使用諸如主成份分析之技術以自經量測光譜直接獲得所關注性質之資訊。
圖4中更詳細地展示輻射源單元2。源包括:第一源模組21,第一源模組21可包括(例如)氙燈且提供第一照明光束IB1;及第二源模組22,第二源模組22提供第二照明光束IB2。第二源模組可包括超連續體雷射221(如圖5所示),超連續體雷射221將光引導至聲光可調諧濾光器(AOTF)222,聲光可調諧濾光器(AOTF)222用以自超連續體雷射221之寬頻帶(白光)輸出選擇窄波長範圍以形成第二照明光束。圖4中將量測器件之剩餘部分中之光束選擇單元25描繪為MS。可代替聲光可調諧濾光器而使用其他波長選擇器件,諸如,干涉濾光器及分散元件(例如,光柵及稜鏡)。
聲光可調諧濾光器222更詳細地展示於圖5中,且包括與由高頻驅動器電路2223所驅動之壓電轉導器2222連接的聲光晶體2221,及聲學吸收器2224。轉導器2222在晶體2221中形成聲波,其中波長係由晶體之機械性質(音速)及驅動頻率判定。當此等波傳播穿過晶體時,其歸因於晶格之交替膨脹及收縮而形成晶體之折射率的週期性再分布。此形成繞射光柵,繞射光柵繞射穿過其中之光,但繞射發生於整個相互作用區域中而非單一點處,且僅繞射滿足相位及/或動量匹配條件之輻射。淨效應為:窄波長頻帶之輻射經繞射成遠離於主光束且可由空間及/或偏振濾光器2225選擇。繞射光束之中心波長視轉導器之驅動頻率而定,因此,其可在相當廣泛之範圍內且極快速地被控制,此視驅動器電路2223、轉導器2222及晶體2221之回應時間而定。繞射光束之強度亦由聲波之強度控制。
可用於聲光晶體之適當材料包括:石英(SiO2
)、KDP(KH2
PO4
)、副黃碲礦或二氧化碲(TeO2
)、LiNbO3
、甘汞或氯化汞(Hg2
Cl2
)、TAS(Ta3
AsSe3
)及Te(碲)、氟化鎂(MgF)及藍寶石(氧化鋁(Al2
O3
))。選定晶體判定聲光可調諧濾光器之詳細幾何形狀。若使用雙折射晶體,則濾光器亦可選擇特定偏振狀態。
高頻驅動單元2223連接至散射計之控制單元CU,其提供驅動信號以導致轉導器發射適當頻率之聲波以選擇以所要波長為中心之窄波長頻帶,此為給定量測所需要。透射光束之頻寬較佳地小於20nm、小於15nm、小於10nm或小於5nm。驅動信號頻率與選定波長之間的精確關係視所使用之特定晶體及器件之幾何形狀而定。在某些情況下,藉由施加具有不同頻率Ω1
至Ωn
之兩個或兩個以上成份之驅動信號,濾光器可經操作以選擇各自以不同波長為中心之複數個成份,其形成允許同時進行複數個量測之多色光束。可變化驅動信號之不同頻率成份之強度以個別地控制多色光束中之不同波長之強度。
圖6中說明超連續體雷射221。超連續體雷射221包括脈衝式雷射源2211,其輸出饋入至非線性媒體2212(例如,光子晶體光纖)中。脈衝式源2211發射持續時間為(例如)毫微微秒或微微秒的極短脈衝,該等極短脈衝由非線性媒體2212擴展成寬頻帶輻射光束之窄波長頻帶。此類型之源可提供具有低光展量(etendue)及適當波長範圍之強大光束。
第一源21及第二源22之輸出藉由光纖23及24而便利地引導至光束選擇單元25。光纖23可包括多模式光纖,且光纖25可包括無端單模式PM光纖。
在此實施例中,光束選擇單元包括傾斜鏡面254,傾斜鏡面254係由致動器255驅動以選擇照明光束IB1、IB2中之一者作為量測光束MB。傾斜鏡面定位於背部投影式基板平面中,亦即,與具有經量測之目標之基板共軛的平面,背部投影式基板平面係由包括第一聚光透鏡256之光學系統形成。第二聚光透鏡253形成背部投影式光瞳平面,亦即,為背部投影式基板平面之傅立葉變換的平面,其中定位孔徑板252。孔徑板252具有被分離小距離之兩個孔徑。在一孔徑中,次級源係由第三聚光透鏡251形成,第三聚光透鏡251自第一源21收集由光纖23所輸出之光。在另一孔徑中,定位載運來自第二源22之光之光纖24的輸出。
藉由以上配置,使兩個照明光束聚集於傾斜鏡面254上,但具有不同入射角。因此,藉由僅將傾斜鏡面254之角度改變小量(例如,在一實施例中小於50mrad),照明光束中之一者可經選擇且沿著第一聚光透鏡256之軸線而被引導。另一光束經離軸引導且由提供於另一背部投影式光瞳平面上之孔徑光闌257阻隔。孔徑光闌257較佳地提供於由致動器258所驅動之回轉台或旋轉料架中,使得可根據選定照明光束而將複數個孔徑中之選定孔徑插入至光徑中。
應瞭解,以上實施例可易於延伸為涵蓋兩個以上光源以提供額外靈活性。舉例而言,可代替超連續體雷射及AOTF而使用多個單色光源以提供波長選擇。可選擇孔徑板252中之多個源的間距、聚光器透鏡256及253之焦距及可傾斜鏡面之移動範圍以容納所要數目之源。
此外,以及藉由在照明光束IB1、IB2之間進行切換,可結合適當孔徑光闌257而使用可傾斜鏡面,以控制晶圓處之照明角度。可傾斜鏡面可圍繞一或兩個軸線而為可傾斜的。較佳地,為了避免定位誤差,可傾斜鏡面圍繞照明光束IB1、IB2之入射點而樞轉。
量測器件之基本照明配置為柯勒(Kohler)照明,使得源尺寸及孔徑板252處之背部投影式光瞳平面中的角分布分別判定照明之角分布及基板上之光點尺寸。因此,所說明配置允許在使用第一源模組之自廣泛角度範圍之小區域的照明與使用第二源模組之自窄角度範圍之更大區域的照明之間進行快速切換。藉由使用足夠強大之源及快速可傾斜鏡面,可在短時間週期內採取使用不同照明角度之大量量測。或者,藉由在圍繞一或兩個軸線而將鏡面傾斜小量時整合所採取之量測,或藉由使用整合感測器,可獲得基於更大經照明區域及廣泛照明角度範圍之量測。在本發明之一實施例的情況下,可提供小量測光點以不填充滿相對較大目標(例如,在切割道中)以用於精確量測,同時可提供具有良好界定之照明角度的更大光點以用於量測相對較小目標(例如,晶粒內標號器)。
可在使用裝置期間保持兩個源均開啟以允許在兩個源之間進行快速選擇或根據需要而對其進行選擇性地供能。
在本發明之一實施例中,可藉由額外高速感測器(如圖7所示)而補充量測器件之量測分支。額外量測分支40包括:部分鍍銀鏡面或光束分光器41,其用以將自目標所反射且由接物鏡15所收集之某些光引導至量測分支中;成像光學器件42,其用以將接物鏡15之光瞳平面之影像投影至可調整孔徑光闌44上;及另一透鏡或透鏡系統45,其用以將目標之影像形成於第二感測器46(其可為CMOS相機)上。在某些特定實施例中,高速相機為理想的。為了便利起見而提供摺疊鏡面43。可調整孔徑光闌44可允許第零階之選擇性阻隔(例如)以用於疊對量測,但穿過可調整孔徑光闌44(例如)以用於CD量測。
以上裝置可用以如下量測疊對。使用各別不同照明角度而獲得疊對目標(例如,偏位光柵)之兩個影像。在一實施例中,針對兩個影像之目標的照明相對於法線而傾斜相同角度,但在相反方向上傾斜。藉由使用圖案辨識演算法,可在每一影像中識別光柵之區域,且自經識別區域獲得強度值。可接著自強度值差判定疊對。此方法可經延伸以藉由在照明角度方位地旋轉約90度之情況下獲取兩個另外影像而在兩個方向上量測疊對。
本發明之另一實施例在源模組方面不同於以上所描述之本發明的實施例,但在其他方面相同。其展示於圖8中。第二源模組22'包括氙燈而非超連續體雷射,且光纖24'為類似於光纖23之多模式光纖。額外聚光透鏡259亦包括於光纖24'之末端與孔徑板252'之間。所說明之摺疊鏡面僅係為了便利起見且可在必要時被省略。孔徑板252'具有適合於由兩個源模組所產生之光束的孔徑尺寸。
因此,在圖8之實施例中,第二源模組22在結構及設置方面等效於第一源模組21,但不同之處在於:光纖24'具有與光纖23不同之直徑。舉例而言,光纖23可具有為約100μm之直徑,且光纖24'具有為約400μm之直徑。因為將光纖21及24'之末端成像於可傾斜鏡面254上,所以可傾斜鏡面可用以簡單且快速地在源之間進行選擇,且因此選擇照明於基板W上之光點的尺寸。如在圖4之實施例中,可使用兩個以上源來致能光點尺寸之更廣泛選擇。
儘管在此本文中可特定地參考微影裝置在IC製造中之使用,但應理解,本文所描述之微影裝置可具有其他應用,諸如,製造積體光學系統、用於磁域記憶體之導引及偵測圖案、平板顯示器、液晶顯示器(LCD)、薄膜磁頭,等等。熟習此項技術者應瞭解,在該等替代應用之情境中,可認為本文對術語"晶圓"或"晶粒"之任何使用分別與更通用之術語"基板"或"目標部分"同義。可在曝光之前或之後在(例如)軌道(通常將抗蝕劑層施加至基板且顯影經曝光抗蝕劑之工具)、量測工具及/或檢測工具中處理本文所提及之基板。適用時,可將本文之揭示應用於該等及其他基板處理工具。另外,可將基板處理一次以上,(例如)以便形成多層IC,使得本文所使用之術語基板亦可指代已經含有多個經處理層之基板。
儘管以上可特定地參考在光學微影術之情境中對本發明之實施例的使用,但應瞭解,本發明可用於其他應用(例如,壓印微影術)中,且在情境允許時不限於光學微影術。在壓印微影術中,圖案化器件中之構形界定形成於基板上之圖案。可將圖案化器件之構形壓入被供應至基板之抗蝕劑層中,在基板上,抗蝕劑藉由施加電磁輻射、熱、壓力或其組合而固化。在抗蝕劑固化之後,將圖案化器件移出抗蝕劑,從而在其中留下圖案。
本文所使用之術語"輻射"及"光束"涵蓋所有類型之電磁輻射,包括紫外線(UV)輻射(例如,具有為或為約365nm、355nm、248nm、193nm、157nm或126nm之波長)及遠紫外線(EUV)輻射(例如,具有在為約5nm至20nm之範圍內的波長);以及粒子束(諸如,離子束或電子束)。
術語"透鏡"在情境允許時可指代各種類型之光學組件中之任一者或組合,包括折射、反射、磁性、電磁及靜電光學組件。
儘管以上已描述本發明之特定實施例,但應瞭解,可以與所描述之方式不同的其他方式來實踐本發明。舉例而言,本發明可採取如下形式:電腦程式,其含有描述如以上所揭示之方法之機器可讀指令的一或多個序列;或資料儲存媒體(例如,半導體記憶體、磁碟或光碟),其具有儲存於其中之該電腦程式。
以上描述意欲為說明性而非限制性的。因此,對於熟習此項技術者而言將顯而易見的為,可在不脫離以下所闡明之申請專利範圍之範疇的情況下對如所描述之本發明進行修改。
2...輻射源單元
11...背部投影式光瞳平面
12...透鏡系統
13...濾光器
14...參考鏡面
15...透鏡系統
16...部分反射表面
17...偏振器
18...偵測器
21...第一源模組
22...第二源模組
22'...第二源模組
23...光纖
24...光纖
24'...光纖
25...光束選擇單元/光纖
40...額外量測分支
41...部分鍍銀鏡面或光束分光器
42...成像光學器件
43...摺疊鏡面
44...可調整孔徑光闌
45...透鏡或透鏡系統
46...第二感測器
221...超連續體雷射
222...聲光可調諧濾光器(AOTF)
251...第三聚光透鏡
252...孔徑板
252'...孔徑板
253...第二聚光透鏡
254...傾斜鏡面
255...致動器
256...第一聚光透鏡
257...孔徑光闌
258...致動器
259...額外聚光透鏡
2211...脈衝式雷射源
2212...非線性媒體
2221...聲光晶體
2222...轉導器
2223...高頻驅動器電路
2224...聲學吸收器
2225...空間及/或偏振濾光器
AD...調整器
AS...對準感測器
B...輻射光束
BD...光束傳送系統
BK...烘焙板
C...目標部分
CH...冷卻板
CU...控制單元
CO...聚光器
DE...顯影器
IB1...第一照明光束
IB2...第二照明光束
IF...位置感測器
IL...照明器
IN...積光器
I/O1...輸入/輸出埠
I/O2...輸入/輸出埠
LA...微影裝置
LACU...微影控制單元
LB...裝載盤
LC...微影單元
LS...位準感測器
M1...光罩對準標記
M2...光罩對準標記
MA...圖案化器件
MB...量測光束
MS...量測器件之剩餘部分中之光束選擇單元
MT...圖案化器件支撐件或支撐結構
P1...基板對準標記
P2...基板對準標記
PM...第一定位器
PS...投影系統
PW...第二定位器
RO...機器人
SC...旋塗器
SCS...監督控制系統
SO...輻射源
TCU...軌道控制單元
W...基板
WTa...基板台
WTb...基板台
X...方向
Y...方向
圖1描繪根據本發明之一實施例的微影裝置;
圖2描繪根據本發明之一實施例的微影單元或叢集;
圖3描繪根據本發明之一實施例的角度解析散射計;
圖4描繪輻射源及圖3之角度解析散射計的光束選擇配置;
圖5描繪圖4之輻射源中的一者;
圖6描繪超連續體雷射;
圖7描繪本發明之一實施例的量測分支;且
圖8描繪本發明之一實施例的輻射源及光束選擇配置。
2...輻射源單元
21...第一源模組
22...第二源模組
23...光纖
24...光纖
25...光束選擇單元/光纖
251...第三聚光透鏡
252...孔徑板
253...第二聚光透鏡
254...傾斜鏡面
255...致動器
256...第一聚光透鏡
257...孔徑光闌
258...致動器
IB1...第一照明光束
IB2...第二照明光束
MB...量測光束
MS...量測器件之剩餘部分中之光束選擇單元
Claims (19)
- 一種經組態以量測一基板上之一目標之一性質的量測(metrology)裝置,該裝置包含:一第一源,該第一源經組態以發射一第一照明輻射光束;一第二源,該第二源經組態以發射一第二照明輻射光束;一光束選擇器件,該光束選擇器件經組態以選擇該第一照明輻射光束及該第二照明輻射光束中之一者作為一量測輻射光束;一接物鏡,該接物鏡經組態以將該量測輻射光束引導至該基板上之該目標上且收集由該目標所繞射之輻射;一感測器,該感測器經組態以偵測該接物鏡之一光瞳平面中的一角度解析光譜,其中該第一源及該第二源中之至少一者包含:一寬頻帶輻射源,該寬頻帶輻射源經配置以發射具有一第一波長範圍之一第一輻射光束;一波長選擇器件,該波長選擇器件經配置以自該第一輻射光束及具有一第二波長範圍之一第二輻射光束選擇一輸出光束,該第二波長範圍窄於該第一波長範圍。
- 如請求項1之裝置,其中該波長選擇器件係選自由一聲光可調諧濾光器、一分散元件及一干涉濾光器組成之群組。
- 如請求項1之裝置,其中該寬頻帶輻射源為一超連續體雷射。
- 如請求項1之裝置,其中該第一源及該第二源中之至少一者包含一氙燈。
- 如請求項1之裝置,其中該第一源包含一氙燈,且該第二源包含:一寬頻帶輻射源,該寬頻帶輻射源經配置以發射具有一第一波長範圍之一第一輻射光束;一波長選擇器件,該波長選擇器件經配置以自該第一輻射光束及具有一第二波長範圍之一第二輻射光束選擇一輸出光束,該第二波長範圍窄於該第一波長範圍。
- 如請求項5之裝置,其中該波長選擇器件係選自由一聲光可調諧濾光器、一分散元件及一干涉濾光器組成之群組。
- 如請求項5之裝置,其中該寬頻帶輻射源為一超連續體雷射。
- 如請求項1之裝置,其中該第一源及該第二源中之每一者包含一氙燈。
- 如請求項1之裝置,其中該接物鏡具有一光瞳平面,且該第一源及該第二源經組態成使得該第一照明光束及該第二照明光束在與該接物鏡之該光瞳平面共軛的一平面處具有各別空間範圍及角度範圍,該第一照明光束之該空間範圍及該角度範圍中的至少一者不同於該第二照明光束之該空間範圍及該角度範圍,使得一由該基板上之 該量測輻射光束所形成之光點根據該光束選擇器件是選擇該第一照明光束還是該第二照明光束作為該量測輻射光束而在尺寸或照明角度或尺寸及照明角度兩者方面不同。
- 如請求項1之裝置,其中該光束選擇器件包含一可傾斜鏡面。
- 如請求項10之裝置,其中該可傾斜鏡面圍繞兩個軸線而為可傾斜的。
- 如請求項10之裝置,其中該光束選擇器件包含一光學系統,該光學系統經組態以將該第一照明光束及該第二照明光束引導至該可傾斜鏡面之一樞軸點上。
- 如請求項10之裝置,其中該可傾斜鏡面經組態成使得其定向之改變會改變該基板上之該量測輻射光束的入射角。
- 如請求項10之裝置,其中該光束選擇器件進一步包含一可選擇孔徑光闌。
- 如請求項1之裝置,其進一步包含:一額外感測器;一光束分光器,該光束分光器經組態以將由該接物鏡所收集之該輻射的一部分引導至該額外感測器;及一成像光學系統,該成像光學系統經組態以將該目標之一影像形成於該額外感測器上。
- 一種微影裝置,其包含:一照明光學系統,該照明光學系統經配置以照明一圖案; 一投影光學系統,該投影光學系統經配置以將該圖案之一影像投影至一基板上;及一量測器件,該量測器件經組態以量測該基板上之一目標之一性質,該器件包含:一第一源,該第一源經組態以發射一第一照明輻射光束;一第二源,該第二源經組態以發射一第二照明輻射光束;一光束選擇器件,該光束選擇器件經組態以選擇該第一照明輻射光束及該第二照明輻射光束中之一者作為一量測輻射光束;一接物鏡,該接物鏡經組態以將該量測輻射光束引導至該基板上之該目標上且收集由該目標所繞射之輻射;一感測器,該感測器經組態以偵測該接物鏡之一光瞳平面中的一角度解析光譜,其中該第一源及該第二源中之至少一者包含:一寬頻帶輻射源,該寬頻帶輻射源經配置以發射具有一第一波長範圍之一第一輻射光束;一波長選擇器件,該波長選擇器件經配置以自該第一輻射光束及具有一第二波長範圍之一第二輻射光束選擇一輸出光束,該第二波長範圍窄於該第一波長範圍。
- 如請求項16之裝置,其包括一曝光台及一量測台,基板 台可在該曝光台與該量測台之間移動,且該量測器件定位於該量測台處。
- 一種量測一基板上之一目標之一性質的方法,該方法包含:產生一第一照明光束或一第二照明光束中之至少一者,該第一照明光束與該第二照明光束在空間範圍及角度範圍中之至少一者方面不同;選擇該第一照明光束及該第二照明光束中之一者作為一量測光束且將該量測光束引導至該目標上;使用一接物鏡而收集自該目標所繞射之輻射;偵測該接物鏡之一光瞳平面中的一角度解析光譜;發射具有一第一波長範圍之一第一輻射光束;及自該第一輻射光束及具有一第二波長範圍之一第二輻射光束選擇一輸出光束,該第二波長範圍窄於該第一波長範圍。
- 如請求項18之方法,其中選擇該第一照明光束或該第二照明光束中之一者係基於該目標之一尺寸或類型或該尺寸及該類型兩者。
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IL207506A (en) | 2014-12-31 |
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US10139277B2 (en) | 2018-11-27 |
US20150308895A1 (en) | 2015-10-29 |
US9110385B2 (en) | 2015-08-18 |
WO2009106279A1 (en) | 2009-09-03 |
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