TWI518779B - 減少絕緣層上覆矽結構中未接合區域之寬度的方法及以此方法製成之晶圓及絕緣層上覆矽結構 - Google Patents

減少絕緣層上覆矽結構中未接合區域之寬度的方法及以此方法製成之晶圓及絕緣層上覆矽結構 Download PDF

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TWI518779B
TWI518779B TW100105495A TW100105495A TWI518779B TW I518779 B TWI518779 B TW I518779B TW 100105495 A TW100105495 A TW 100105495A TW 100105495 A TW100105495 A TW 100105495A TW I518779 B TWI518779 B TW I518779B
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Taiwan
Prior art keywords
wafer
less
handle
donor
dielectric layer
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TW100105495A
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Chinese (zh)
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TW201140694A (en
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約翰A 皮特尼
吉村一朗
盧 非
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Memc電子材料公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1914Preparing SOI wafers using bonding
    • H10P90/1916Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/129Preparing bulk and homogeneous wafers by polishing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW100105495A 2010-02-25 2011-02-18 減少絕緣層上覆矽結構中未接合區域之寬度的方法及以此方法製成之晶圓及絕緣層上覆矽結構 TWI518779B (zh)

Applications Claiming Priority (1)

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US30818510P 2010-02-25 2010-02-25

Publications (2)

Publication Number Publication Date
TW201140694A TW201140694A (en) 2011-11-16
TWI518779B true TWI518779B (zh) 2016-01-21

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TW100105495A TWI518779B (zh) 2010-02-25 2011-02-18 減少絕緣層上覆矽結構中未接合區域之寬度的方法及以此方法製成之晶圓及絕緣層上覆矽結構

Country Status (8)

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US (2) US8330245B2 (https=)
EP (1) EP2539928B1 (https=)
JP (1) JP6066729B2 (https=)
KR (2) KR101972286B1 (https=)
CN (1) CN102770955B (https=)
SG (2) SG183175A1 (https=)
TW (1) TWI518779B (https=)
WO (1) WO2011106144A1 (https=)

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Also Published As

Publication number Publication date
SG183175A1 (en) 2012-09-27
US8440541B2 (en) 2013-05-14
CN102770955A (zh) 2012-11-07
US8330245B2 (en) 2012-12-11
KR20120121905A (ko) 2012-11-06
WO2011106144A1 (en) 2011-09-01
CN102770955B (zh) 2015-06-17
EP2539928A1 (en) 2013-01-02
SG189816A1 (en) 2013-05-31
JP2013520838A (ja) 2013-06-06
EP2539928B1 (en) 2016-10-19
JP6066729B2 (ja) 2017-01-25
KR101972286B1 (ko) 2019-04-24
KR101882026B1 (ko) 2018-07-25
US20110207246A1 (en) 2011-08-25
KR20180052773A (ko) 2018-05-18
US20110204471A1 (en) 2011-08-25
TW201140694A (en) 2011-11-16

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