KR101882026B1 - Ｓｏｉ 구조체 및 웨이퍼 내 미접합 영역의 폭을 줄이는 방법 및 그러한 방법에 의해 생성된 ｓｏｉ 구조체 - Google Patents
Ｓｏｉ 구조체 및 웨이퍼 내 미접합 영역의 폭을 줄이는 방법 및 그러한 방법에 의해 생성된 ｓｏｉ 구조체 Download PDFInfo
- Publication number
- KR101882026B1 KR101882026B1 KR1020127022324A KR20127022324A KR101882026B1 KR 101882026 B1 KR101882026 B1 KR 101882026B1 KR 1020127022324 A KR1020127022324 A KR 1020127022324A KR 20127022324 A KR20127022324 A KR 20127022324A KR 101882026 B1 KR101882026 B1 KR 101882026B1
- Authority
- KR
- South Korea
- Prior art keywords
- methods
- soi structures
- wafers
- reducing
- width
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30818510P | 2010-02-25 | 2010-02-25 | |
| US61/308,185 | 2010-02-25 | ||
| PCT/US2011/023937 WO2011106144A1 (en) | 2010-02-25 | 2011-02-07 | Methods for reducing the width of the unbonded region in soi structures and wafers and soi structures produced by such methods |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187012785A Division KR101972286B1 (ko) | 2010-02-25 | 2011-02-07 | Ｓｏｉ 구조체 및 웨이퍼 내 미접합 영역의 폭을 줄이는 방법 및 그러한 방법에 의해 생성된 ｓｏｉ 구조체 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120121905A KR20120121905A (ko) | 2012-11-06 |
| KR101882026B1 true KR101882026B1 (ko) | 2018-07-25 |
Family
ID=43927950
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127022324A KR101882026B1 (ko) | 2010-02-25 | 2011-02-07 | Ｓｏｉ 구조체 및 웨이퍼 내 미접합 영역의 폭을 줄이는 방법 및 그러한 방법에 의해 생성된 ｓｏｉ 구조체 |
| KR1020187012785A KR101972286B1 (ko) | 2010-02-25 | 2011-02-07 | Ｓｏｉ 구조체 및 웨이퍼 내 미접합 영역의 폭을 줄이는 방법 및 그러한 방법에 의해 생성된 ｓｏｉ 구조체 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187012785A KR101972286B1 (ko) | 2010-02-25 | 2011-02-07 | Ｓｏｉ 구조체 및 웨이퍼 내 미접합 영역의 폭을 줄이는 방법 및 그러한 방법에 의해 생성된 ｓｏｉ 구조체 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8330245B2 (ko) |
| EP (1) | EP2539928B1 (ko) |
| JP (1) | JP6066729B2 (ko) |
| KR (2) | KR101882026B1 (ko) |
| CN (1) | CN102770955B (ko) |
| SG (2) | SG189816A1 (ko) |
| TW (1) | TWI518779B (ko) |
| WO (1) | WO2011106144A1 (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012156495A (ja) * | 2011-01-07 | 2012-08-16 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法 |
| US8637381B2 (en) * | 2011-10-17 | 2014-01-28 | International Business Machines Corporation | High-k dielectric and silicon nitride box region |
| US8796054B2 (en) * | 2012-05-31 | 2014-08-05 | Corning Incorporated | Gallium nitride to silicon direct wafer bonding |
| US8896964B1 (en) | 2013-05-16 | 2014-11-25 | Seagate Technology Llc | Enlarged substrate for magnetic recording medium |
| JP6314019B2 (ja) * | 2014-03-31 | 2018-04-18 | ニッタ・ハース株式会社 | 半導体基板の研磨方法 |
| US10128146B2 (en) | 2015-08-20 | 2018-11-13 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures |
| US10529616B2 (en) | 2015-11-20 | 2020-01-07 | Globalwafers Co., Ltd. | Manufacturing method of smoothing a semiconductor surface |
| US9806025B2 (en) | 2015-12-29 | 2017-10-31 | Globalfoundries Inc. | SOI wafers with buried dielectric layers to prevent Cu diffusion |
| US10679908B2 (en) * | 2017-01-23 | 2020-06-09 | Globalwafers Co., Ltd. | Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures |
| CN110214369A (zh) | 2017-03-02 | 2019-09-06 | Ev 集团 E·索尔纳有限责任公司 | 用于键合芯片的方法和装置 |
| CN109425315B (zh) * | 2017-08-31 | 2021-01-15 | 长鑫存储技术有限公司 | 半导体结构的测试载具及测试方法 |
| EP4210092A1 (en) * | 2018-06-08 | 2023-07-12 | GlobalWafers Co., Ltd. | Method for transfer of a thin layer of silicon |
| JP7067465B2 (ja) * | 2018-12-27 | 2022-05-16 | 株式会社Sumco | 半導体ウェーハの評価方法及び半導体ウェーハの製造方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| DE69332407T2 (de) | 1992-06-17 | 2003-06-18 | Harris Corp | Herstellung von Halbleiteranordnungen auf SOI substraten |
| JPH07106512A (ja) | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
| US5571373A (en) | 1994-05-18 | 1996-11-05 | Memc Electronic Materials, Inc. | Method of rough polishing semiconductor wafers to reduce surface roughness |
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| GB2343550A (en) | 1997-07-29 | 2000-05-10 | Silicon Genesis Corp | Cluster tool method and apparatus using plasma immersion ion implantation |
| US6265314B1 (en) * | 1998-06-09 | 2001-07-24 | Advanced Micro Devices, Inc. | Wafer edge polish |
| US20020187595A1 (en) | 1999-08-04 | 2002-12-12 | Silicon Evolution, Inc. | Methods for silicon-on-insulator (SOI) manufacturing with improved control and site thickness variations and improved bonding interface quality |
| US6797632B1 (en) | 1999-10-14 | 2004-09-28 | Shin-Etsu Handotai Co., Ltd. | Bonded wafer producing method and bonded wafer |
| JP4846915B2 (ja) * | 2000-03-29 | 2011-12-28 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| CN1217387C (zh) * | 2000-10-26 | 2005-08-31 | 信越半导体株式会社 | 单晶片的制造方法及研磨装置以及单晶片 |
| KR100401655B1 (ko) | 2001-01-18 | 2003-10-17 | 주식회사 컴텍스 | ALE를 이용한 알루미나(Al₂O₃) 유전체 층 형성에 의한 스마트 공정을 이용한 유니본드형 SOI 웨이퍼의 제조방법 |
| WO2003038884A2 (en) * | 2001-10-29 | 2003-05-08 | Analog Devices Inc. | A method for bonding a pair of silicon wafers together and a semiconductor wafer |
| JP3664676B2 (ja) * | 2001-10-30 | 2005-06-29 | 信越半導体株式会社 | ウェーハの研磨方法及びウェーハ研磨用研磨パッド |
| JP2003229392A (ja) * | 2001-11-28 | 2003-08-15 | Shin Etsu Handotai Co Ltd | シリコンウエーハの製造方法及びシリコンウエーハ並びにｓｏｉウエーハ |
| US6849548B2 (en) | 2002-04-05 | 2005-02-01 | Seh America, Inc. | Method of reducing particulate contamination during polishing of a wafer |
| US6824622B2 (en) * | 2002-06-27 | 2004-11-30 | Taiwan Semiconductor Manufacturing Co., Ltd | Cleaner and method for removing fluid from an object |
| FR2842646B1 (fr) | 2002-07-17 | 2005-06-24 | Soitec Silicon On Insulator | Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support |
| JP2004186226A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの製造方法 |
| US7176528B2 (en) | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
| US6908027B2 (en) | 2003-03-31 | 2005-06-21 | Intel Corporation | Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process |
| DE10355728B4 (de) * | 2003-11-28 | 2006-04-13 | X-Fab Semiconductor Foundries Ag | Verbinden von Halbleiterscheiben gleichen Durchmessers zum Erhalt einer gebondeten Scheibenanordnung |
| US7094666B2 (en) * | 2004-07-29 | 2006-08-22 | Silicon Genesis Corporation | Method and system for fabricating strained layers for the manufacture of integrated circuits |
| KR20080033341A (ko) * | 2005-08-03 | 2008-04-16 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | 스트레인드 실리콘 층 내에 개선된 결정화도를 갖는스트레인드 실리콘 온 인슐레이터 구조 |
| ATE383656T1 (de) | 2006-03-31 | 2008-01-15 | Soitec Silicon On Insulator | Verfahren zur herstellung eines verbundmaterials und verfahren zur auswahl eines wafers |
| DE102006023497B4 (de) | 2006-05-18 | 2008-05-29 | Siltronic Ag | Verfahren zur Behandlung einer Halbleiterscheibe |
| FR2910702B1 (fr) * | 2006-12-26 | 2009-04-03 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat mixte |
| US7853429B2 (en) * | 2007-04-23 | 2010-12-14 | Kla-Tencor Corporation | Curvature-based edge bump quantification |
-
2011
- 2011-02-04 US US13/021,443 patent/US8330245B2/en active Active
- 2011-02-04 US US13/021,467 patent/US8440541B2/en active Active
- 2011-02-07 SG SG2013032628A patent/SG189816A1/en unknown
- 2011-02-07 JP JP2012555018A patent/JP6066729B2/ja active Active
- 2011-02-07 KR KR1020127022324A patent/KR101882026B1/ko active IP Right Grant
- 2011-02-07 KR KR1020187012785A patent/KR101972286B1/ko active IP Right Grant
- 2011-02-07 CN CN201180010887.7A patent/CN102770955B/zh active Active
- 2011-02-07 EP EP11703798.6A patent/EP2539928B1/en active Active
- 2011-02-07 WO PCT/US2011/023937 patent/WO2011106144A1/en active Application Filing
- 2011-02-07 SG SG2012057857A patent/SG183175A1/en unknown
- 2011-02-18 TW TW100105495A patent/TWI518779B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102770955A (zh) | 2012-11-07 |
| KR101972286B1 (ko) | 2019-04-24 |
| JP6066729B2 (ja) | 2017-01-25 |
| JP2013520838A (ja) | 2013-06-06 |
| TWI518779B (zh) | 2016-01-21 |
| EP2539928B1 (en) | 2016-10-19 |
| SG183175A1 (en) | 2012-09-27 |
| US20110204471A1 (en) | 2011-08-25 |
| TW201140694A (en) | 2011-11-16 |
| US8440541B2 (en) | 2013-05-14 |
| CN102770955B (zh) | 2015-06-17 |
| KR20180052773A (ko) | 2018-05-18 |
| US8330245B2 (en) | 2012-12-11 |
| EP2539928A1 (en) | 2013-01-02 |
| US20110207246A1 (en) | 2011-08-25 |
| WO2011106144A1 (en) | 2011-09-01 |
| SG189816A1 (en) | 2013-05-31 |
| KR20120121905A (ko) | 2012-11-06 |
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