CN102770955B - 减小soi结构中的未接合区的宽度的方法以及由该方法制造的晶片和soi结构 - Google Patents
减小soi结构中的未接合区的宽度的方法以及由该方法制造的晶片和soi结构 Download PDFInfo
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- CN102770955B CN102770955B CN201180010887.7A CN201180010887A CN102770955B CN 102770955 B CN102770955 B CN 102770955B CN 201180010887 A CN201180010887 A CN 201180010887A CN 102770955 B CN102770955 B CN 102770955B
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- Prior art keywords
- wafer
- silicon
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
- H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/129—Preparing bulk and homogeneous wafers by polishing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30818510P | 2010-02-25 | 2010-02-25 | |
| US61/308,185 | 2010-02-25 | ||
| PCT/US2011/023937 WO2011106144A1 (en) | 2010-02-25 | 2011-02-07 | Methods for reducing the width of the unbonded region in soi structures and wafers and soi structures produced by such methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102770955A CN102770955A (zh) | 2012-11-07 |
| CN102770955B true CN102770955B (zh) | 2015-06-17 |
Family
ID=43927950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180010887.7A Active CN102770955B (zh) | 2010-02-25 | 2011-02-07 | 减小soi结构中的未接合区的宽度的方法以及由该方法制造的晶片和soi结构 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8330245B2 (https=) |
| EP (1) | EP2539928B1 (https=) |
| JP (1) | JP6066729B2 (https=) |
| KR (2) | KR101972286B1 (https=) |
| CN (1) | CN102770955B (https=) |
| SG (2) | SG183175A1 (https=) |
| TW (1) | TWI518779B (https=) |
| WO (1) | WO2011106144A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012156495A (ja) * | 2011-01-07 | 2012-08-16 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法 |
| US8637381B2 (en) * | 2011-10-17 | 2014-01-28 | International Business Machines Corporation | High-k dielectric and silicon nitride box region |
| US8796054B2 (en) * | 2012-05-31 | 2014-08-05 | Corning Incorporated | Gallium nitride to silicon direct wafer bonding |
| US8896964B1 (en) | 2013-05-16 | 2014-11-25 | Seagate Technology Llc | Enlarged substrate for magnetic recording medium |
| JP6314019B2 (ja) * | 2014-03-31 | 2018-04-18 | ニッタ・ハース株式会社 | 半導体基板の研磨方法 |
| US10128146B2 (en) | 2015-08-20 | 2018-11-13 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures |
| JP6749394B2 (ja) | 2015-11-20 | 2020-09-02 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 滑らかな半導体表面の製造方法 |
| US9806025B2 (en) | 2015-12-29 | 2017-10-31 | Globalfoundries Inc. | SOI wafers with buried dielectric layers to prevent Cu diffusion |
| US10679908B2 (en) * | 2017-01-23 | 2020-06-09 | Globalwafers Co., Ltd. | Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures |
| KR102904959B1 (ko) | 2017-03-02 | 2025-12-31 | 에베 그룹 에. 탈너 게엠베하 | 칩들을 본딩하기 위한 방법 및 디바이스 |
| CN109425315B (zh) * | 2017-08-31 | 2021-01-15 | 长鑫存储技术有限公司 | 半导体结构的测试载具及测试方法 |
| EP4210092A1 (en) | 2018-06-08 | 2023-07-12 | GlobalWafers Co., Ltd. | Method for transfer of a thin layer of silicon |
| JP7067465B2 (ja) * | 2018-12-27 | 2022-05-16 | 株式会社Sumco | 半導体ウェーハの評価方法及び半導体ウェーハの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1394355A (zh) * | 2000-10-26 | 2003-01-29 | 信越半导体株式会社 | 单晶片的制造方法及研磨装置以及单晶片 |
| CN1489783A (zh) * | 2001-11-28 | 2004-04-14 | ��Խ�뵼����ʽ���� | 硅晶片的制造方法及硅晶片以及soi晶片 |
| CN1579014A (zh) * | 2001-10-30 | 2005-02-09 | 信越半导体株式会社 | 晶片的研磨方法及晶片研磨用研磨垫 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617798B2 (ja) * | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| WO1993026041A1 (en) * | 1992-06-17 | 1993-12-23 | Harris Corporation | Bonded wafer processing |
| JPH07106512A (ja) * | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
| US5571373A (en) * | 1994-05-18 | 1996-11-05 | Memc Electronic Materials, Inc. | Method of rough polishing semiconductor wafers to reduce surface roughness |
| US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| US6153524A (en) * | 1997-07-29 | 2000-11-28 | Silicon Genesis Corporation | Cluster tool method using plasma immersion ion implantation |
| US6265314B1 (en) * | 1998-06-09 | 2001-07-24 | Advanced Micro Devices, Inc. | Wafer edge polish |
| US20020187595A1 (en) * | 1999-08-04 | 2002-12-12 | Silicon Evolution, Inc. | Methods for silicon-on-insulator (SOI) manufacturing with improved control and site thickness variations and improved bonding interface quality |
| KR100733112B1 (ko) | 1999-10-14 | 2007-06-27 | 신에쯔 한도타이 가부시키가이샤 | 접합웨이퍼의 제조방법 |
| JP4846915B2 (ja) * | 2000-03-29 | 2011-12-28 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| KR100401655B1 (ko) * | 2001-01-18 | 2003-10-17 | 주식회사 컴텍스 | ALE를 이용한 알루미나(Al₂O₃) 유전체 층 형성에 의한 스마트 공정을 이용한 유니본드형 SOI 웨이퍼의 제조방법 |
| WO2003038884A2 (en) * | 2001-10-29 | 2003-05-08 | Analog Devices Inc. | A method for bonding a pair of silicon wafers together and a semiconductor wafer |
| US6849548B2 (en) * | 2002-04-05 | 2005-02-01 | Seh America, Inc. | Method of reducing particulate contamination during polishing of a wafer |
| US6824622B2 (en) * | 2002-06-27 | 2004-11-30 | Taiwan Semiconductor Manufacturing Co., Ltd | Cleaner and method for removing fluid from an object |
| FR2842646B1 (fr) * | 2002-07-17 | 2005-06-24 | Soitec Silicon On Insulator | Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support |
| JP2004186226A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの製造方法 |
| US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
| US6908027B2 (en) * | 2003-03-31 | 2005-06-21 | Intel Corporation | Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process |
| DE10355728B4 (de) * | 2003-11-28 | 2006-04-13 | X-Fab Semiconductor Foundries Ag | Verbinden von Halbleiterscheiben gleichen Durchmessers zum Erhalt einer gebondeten Scheibenanordnung |
| US7094666B2 (en) * | 2004-07-29 | 2006-08-22 | Silicon Genesis Corporation | Method and system for fabricating strained layers for the manufacture of integrated circuits |
| CN101273449A (zh) * | 2005-08-03 | 2008-09-24 | Memc电子材料有限公司 | 在应变硅层中具有提高的结晶度的应变绝缘体上硅（ssoi）结构 |
| EP1840955B1 (en) * | 2006-03-31 | 2008-01-09 | S.O.I.TEC. Silicon on Insulator Technologies S.A. | Method for fabricating a compound material and method for choosing a wafer |
| DE102006023497B4 (de) * | 2006-05-18 | 2008-05-29 | Siltronic Ag | Verfahren zur Behandlung einer Halbleiterscheibe |
| FR2910702B1 (fr) * | 2006-12-26 | 2009-04-03 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat mixte |
| US7853429B2 (en) * | 2007-04-23 | 2010-12-14 | Kla-Tencor Corporation | Curvature-based edge bump quantification |
-
2011
- 2011-02-04 US US13/021,443 patent/US8330245B2/en active Active
- 2011-02-04 US US13/021,467 patent/US8440541B2/en active Active
- 2011-02-07 KR KR1020187012785A patent/KR101972286B1/ko active Active
- 2011-02-07 SG SG2012057857A patent/SG183175A1/en unknown
- 2011-02-07 WO PCT/US2011/023937 patent/WO2011106144A1/en not_active Ceased
- 2011-02-07 JP JP2012555018A patent/JP6066729B2/ja active Active
- 2011-02-07 KR KR1020127022324A patent/KR101882026B1/ko active Active
- 2011-02-07 EP EP11703798.6A patent/EP2539928B1/en active Active
- 2011-02-07 SG SG2013032628A patent/SG189816A1/en unknown
- 2011-02-07 CN CN201180010887.7A patent/CN102770955B/zh active Active
- 2011-02-18 TW TW100105495A patent/TWI518779B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1394355A (zh) * | 2000-10-26 | 2003-01-29 | 信越半导体株式会社 | 单晶片的制造方法及研磨装置以及单晶片 |
| CN1579014A (zh) * | 2001-10-30 | 2005-02-09 | 信越半导体株式会社 | 晶片的研磨方法及晶片研磨用研磨垫 |
| CN1489783A (zh) * | 2001-11-28 | 2004-04-14 | ��Խ�뵼����ʽ���� | 硅晶片的制造方法及硅晶片以及soi晶片 |
Also Published As
| Publication number | Publication date |
|---|---|
| SG183175A1 (en) | 2012-09-27 |
| US8440541B2 (en) | 2013-05-14 |
| CN102770955A (zh) | 2012-11-07 |
| US8330245B2 (en) | 2012-12-11 |
| KR20120121905A (ko) | 2012-11-06 |
| TWI518779B (zh) | 2016-01-21 |
| WO2011106144A1 (en) | 2011-09-01 |
| EP2539928A1 (en) | 2013-01-02 |
| SG189816A1 (en) | 2013-05-31 |
| JP2013520838A (ja) | 2013-06-06 |
| EP2539928B1 (en) | 2016-10-19 |
| JP6066729B2 (ja) | 2017-01-25 |
| KR101972286B1 (ko) | 2019-04-24 |
| KR101882026B1 (ko) | 2018-07-25 |
| US20110207246A1 (en) | 2011-08-25 |
| KR20180052773A (ko) | 2018-05-18 |
| US20110204471A1 (en) | 2011-08-25 |
| TW201140694A (en) | 2011-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190925 Address after: Taiwan, China Hsinchu Science Park industrial two East Road, No. 8 Patentee after: GlobalWafers Co.,Ltd. Address before: Singapore City Patentee before: SunEdison Semiconductor Limited (UEN201334164H) Effective date of registration: 20190925 Address after: Singapore City Patentee after: SunEdison Semiconductor Limited (UEN201334164H) Address before: Missouri, USA Patentee before: MEMC Electronic Materials, Inc. |