TWI515510B - 修改聚合物材料表面交互作用之方法和程序 - Google Patents
修改聚合物材料表面交互作用之方法和程序 Download PDFInfo
- Publication number
- TWI515510B TWI515510B TW098143041A TW98143041A TWI515510B TW I515510 B TWI515510 B TW I515510B TW 098143041 A TW098143041 A TW 098143041A TW 98143041 A TW98143041 A TW 98143041A TW I515510 B TWI515510 B TW I515510B
- Authority
- TW
- Taiwan
- Prior art keywords
- ips
- photocurable
- resist
- acrylate
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 47
- 239000002861 polymer material Substances 0.000 title description 3
- 230000003993 interaction Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 53
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 45
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 13
- 239000000178 monomer Substances 0.000 claims description 13
- 238000001723 curing Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 238000006116 polymerization reaction Methods 0.000 claims description 9
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 238000001127 nanoimprint lithography Methods 0.000 claims description 6
- 239000012952 cationic photoinitiator Substances 0.000 claims description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 4
- 239000012949 free radical photoinitiator Substances 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 150000002118 epoxides Chemical class 0.000 claims 5
- 238000000016 photochemical curing Methods 0.000 claims 2
- 150000001540 azides Chemical class 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- KWWBHCXWSVLTBF-UHFFFAOYSA-N decane;prop-2-enoic acid Chemical compound OC(=O)C=C.CCCCCCCCCC KWWBHCXWSVLTBF-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 238000009396 hybridization Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 41
- 238000009472 formulation Methods 0.000 description 19
- 150000002924 oxiranes Chemical class 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 15
- 230000000181 anti-adherent effect Effects 0.000 description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 12
- 229920003023 plastic Polymers 0.000 description 8
- 239000004033 plastic Substances 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 6
- -1 cyclic epoxide Chemical class 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- 229920006254 polymer film Polymers 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229920001400 block copolymer Polymers 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000004049 embossing Methods 0.000 description 5
- 229920005570 flexible polymer Polymers 0.000 description 5
- 239000002318 adhesion promoter Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 239000010702 perfluoropolyether Substances 0.000 description 4
- 230000010076 replication Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010538 cationic polymerization reaction Methods 0.000 description 3
- NZZFYRREKKOMAT-UHFFFAOYSA-N diiodomethane Chemical compound ICI NZZFYRREKKOMAT-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920006289 polycarbonate film Polymers 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OJYDBIDPBBWHMT-UHFFFAOYSA-N C(C=C)(=O)OCCCCCCCCCCCCC(OC)(OC)OC Chemical compound C(C=C)(=O)OCCCCCCCCCCCCC(OC)(OC)OC OJYDBIDPBBWHMT-UHFFFAOYSA-N 0.000 description 1
- KDWQGVIRHOTQHB-UHFFFAOYSA-N CC(CCCCCCCCCOCCCCCCCCCC)(C)C Chemical compound CC(CCCCCCCCCOCCCCCCCCCC)(C)C KDWQGVIRHOTQHB-UHFFFAOYSA-N 0.000 description 1
- NDIJMCUWCKUPGU-UHFFFAOYSA-N CCCCOC(C(Cl)(C)C)CCCCCCCC Chemical compound CCCCOC(C(Cl)(C)C)CCCCCCCC NDIJMCUWCKUPGU-UHFFFAOYSA-N 0.000 description 1
- HBOOXBWNADZQDD-UHFFFAOYSA-N COC(CCCCCCCCCCCCOC(C(=C)C)=O)(OC)OC Chemical compound COC(CCCCCCCCCCCCOC(C(=C)C)=O)(OC)OC HBOOXBWNADZQDD-UHFFFAOYSA-N 0.000 description 1
- HCULCJNSZJLXBW-UHFFFAOYSA-N COCCCCCCCCCC.C=CC Chemical class COCCCCCCCCCC.C=CC HCULCJNSZJLXBW-UHFFFAOYSA-N 0.000 description 1
- AMIGGFFNSNTRGO-UHFFFAOYSA-N ClCl.C=CC Chemical compound ClCl.C=CC AMIGGFFNSNTRGO-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- ATMLPEJAVWINOF-UHFFFAOYSA-N acrylic acid acrylic acid Chemical compound OC(=O)C=C.OC(=O)C=C ATMLPEJAVWINOF-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000012986 chain transfer agent Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- FWLDHHJLVGRRHD-UHFFFAOYSA-N decyl prop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C=C FWLDHHJLVGRRHD-UHFFFAOYSA-N 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003527 tetrahydropyrans Chemical class 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Polymerisation Methods In General (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Epoxy Resins (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13903008P | 2008-12-19 | 2008-12-19 | |
| EP08172342.1A EP2199855B1 (en) | 2008-12-19 | 2008-12-19 | Methods and processes for modifying polymer material surface interactions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201027251A TW201027251A (en) | 2010-07-16 |
| TWI515510B true TWI515510B (zh) | 2016-01-01 |
Family
ID=40521956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098143041A TWI515510B (zh) | 2008-12-19 | 2009-12-16 | 修改聚合物材料表面交互作用之方法和程序 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9063408B2 (enExample) |
| EP (1) | EP2199855B1 (enExample) |
| JP (2) | JP5725465B2 (enExample) |
| KR (1) | KR101767179B1 (enExample) |
| CN (1) | CN101872115B (enExample) |
| SG (1) | SG162674A1 (enExample) |
| TW (1) | TWI515510B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5321228B2 (ja) * | 2009-04-28 | 2013-10-23 | Ｊｓｒ株式会社 | ナノインプリントリソグラフィー用光硬化性組成物及びナノインプリント方法 |
| KR101653626B1 (ko) * | 2009-07-13 | 2016-09-02 | 주식회사 동진쎄미켐 | 광경화형 함불소 수지 조성물 및 이를 이용한 수지 몰드의 제조방법 |
| JP2013518740A (ja) * | 2010-02-05 | 2013-05-23 | オブダカット・アーベー | 大面積ナノパターン用金属スタンプ複製の方法及びプロセス |
| CN102791452B (zh) * | 2010-03-10 | 2015-07-08 | 旭化成电子材料株式会社 | 树脂模具 |
| SG10201506124TA (en) * | 2010-08-06 | 2015-09-29 | Soken Kagaku Kk | Resin Mold For Nanoimprinting And Production Method Thereof |
| JP5481000B2 (ja) * | 2010-08-26 | 2014-04-23 | エーエスエムエル ネザーランズ ビー．ブイ． | インプリントリソグラフィ方法 |
| JP5306404B2 (ja) * | 2011-03-25 | 2013-10-02 | 株式会社東芝 | パターン形成方法 |
| JP6162145B2 (ja) * | 2012-01-13 | 2017-07-12 | エーエスエムエル ネザーランズ ビー．ブイ． | 自己組織化可能な重合体及びリソグラフィにおける使用方法 |
| JP5959865B2 (ja) | 2012-02-09 | 2016-08-02 | キヤノン株式会社 | 光硬化物及びその製造方法 |
| JP6090732B2 (ja) * | 2012-05-14 | 2017-03-08 | 東洋合成工業株式会社 | 光インプリント方法 |
| WO2013174522A1 (en) * | 2012-05-25 | 2013-11-28 | Micro Resist Technology Gesellschaft Für Chemische Materialien Spezieller Photoresistsysteme Mbh | Composition suitable for use as a release-optimized material for nanoimprint processes and uses thereof |
| JP6071255B2 (ja) * | 2012-06-04 | 2017-02-01 | キヤノン株式会社 | 光硬化物 |
| CN104619704B (zh) | 2012-09-14 | 2017-12-05 | 宝丽制药股份有限公司 | 表面自由能用于分化评价晶体的用途，基于表面自由能作为指标评价的晶体，以及通过包含所述晶体制备的药物组合物 |
| KR101332323B1 (ko) * | 2013-04-01 | 2013-11-25 | 한국기계연구원 | 롤스탬프 제조장치, 이를 이용한 롤스탬프 제조방법 및 복제스탬프 제조방법 |
| CN110764365B (zh) | 2013-06-19 | 2023-10-27 | Ev 集团 E·索尔纳有限责任公司 | 用于压印光刻的压印物料 |
| JP5985442B2 (ja) * | 2013-07-26 | 2016-09-06 | 株式会社東芝 | レジスト材料及びそれを用いたパターン形成方法 |
| KR102267680B1 (ko) * | 2013-11-29 | 2021-06-22 | 에베 그룹 에. 탈너 게엠베하 | 다이 구조물을 가지는 다이, 뿐만 아니라 이의 제조 방법 |
| JP6371076B2 (ja) * | 2014-02-24 | 2018-08-08 | 旭化成株式会社 | フィルム状モールドの製造方法 |
| US10754244B2 (en) * | 2016-03-31 | 2020-08-25 | Canon Kabushiki Kaisha | Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold |
| JP6754344B2 (ja) * | 2017-09-26 | 2020-09-09 | 富士フイルム株式会社 | インプリント用下層膜形成用組成物、キット、積層体、積層体の製造方法、硬化物パターンの製造方法、回路基板の製造方法 |
| JP2018166222A (ja) * | 2018-07-13 | 2018-10-25 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | スタンパ構造を備えたスタンパ並びにその製造方法 |
| US11549020B2 (en) | 2019-09-23 | 2023-01-10 | Canon Kabushiki Kaisha | Curable composition for nano-fabrication |
| CA3145159A1 (en) * | 2020-04-24 | 2021-10-28 | Illumina Cambridge Limited | Flow cells |
| CN112731764A (zh) * | 2020-12-29 | 2021-04-30 | 苏州理硕科技有限公司 | 负性光刻胶组合物和形成光刻胶图案的方法 |
| US11884977B2 (en) | 2021-03-12 | 2024-01-30 | Singular Genomics Systems, Inc. | Nanoarrays and methods of use thereof |
| WO2022192671A1 (en) | 2021-03-12 | 2022-09-15 | Singular Genomics Systems, Inc. | Nanoarrays and methods of use thereof |
| EP4294920A4 (en) | 2021-04-27 | 2025-01-22 | Singular Genomics Systems, Inc. | HIGH-DENSITY SEQUENCING AND MULTIPLEX PRIMING |
| WO2023023638A1 (en) | 2021-08-20 | 2023-02-23 | Singular Genomics Systems, Inc. | Chemical and thermal assisted nucleic acid amplification methods |
| WO2023034920A2 (en) | 2021-09-03 | 2023-03-09 | Singular Genomics Systems, Inc. | Amplification oligonucleotides |
| EP4422792A4 (en) | 2021-10-26 | 2025-12-17 | Singular Genomics Systems Inc | TARGETED MULTIPLEX AMPLIFICATION OF POLYNUCLEOTIDS |
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-
2008
- 2008-12-19 EP EP08172342.1A patent/EP2199855B1/en active Active
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2009
- 2009-12-04 SG SG200908085-4A patent/SG162674A1/en unknown
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- 2009-12-14 JP JP2009283148A patent/JP5725465B2/ja active Active
- 2009-12-16 TW TW098143041A patent/TWI515510B/zh active
- 2009-12-17 CN CN200910261311.2A patent/CN101872115B/zh active Active
- 2009-12-18 KR KR1020090126769A patent/KR101767179B1/ko active Active
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- 2015-02-06 JP JP2015022431A patent/JP5838002B2/ja active Active
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| Publication number | Publication date |
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| TW201027251A (en) | 2010-07-16 |
| JP5838002B2 (ja) | 2015-12-24 |
| JP2010183064A (ja) | 2010-08-19 |
| JP5725465B2 (ja) | 2015-05-27 |
| CN101872115A (zh) | 2010-10-27 |
| JP2015097293A (ja) | 2015-05-21 |
| KR101767179B1 (ko) | 2017-08-10 |
| US20100160478A1 (en) | 2010-06-24 |
| CN101872115B (zh) | 2015-09-30 |
| HK1149804A1 (en) | 2011-10-14 |
| US9063408B2 (en) | 2015-06-23 |
| EP2199855A1 (en) | 2010-06-23 |
| KR20100071925A (ko) | 2010-06-29 |
| SG162674A1 (en) | 2010-07-29 |
| EP2199855B1 (en) | 2016-07-20 |
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