TWI513062B - 發光元件封裝結構及其製造方法 - Google Patents

發光元件封裝結構及其製造方法 Download PDF

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Publication number
TWI513062B
TWI513062B TW099123496A TW99123496A TWI513062B TW I513062 B TWI513062 B TW I513062B TW 099123496 A TW099123496 A TW 099123496A TW 99123496 A TW99123496 A TW 99123496A TW I513062 B TWI513062 B TW I513062B
Authority
TW
Taiwan
Prior art keywords
light
substrate
emitting element
device package
electrode
Prior art date
Application number
TW099123496A
Other languages
English (en)
Chinese (zh)
Other versions
TW201110428A (en
Inventor
金泰潤
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201110428A publication Critical patent/TW201110428A/zh
Application granted granted Critical
Publication of TWI513062B publication Critical patent/TWI513062B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW099123496A 2009-07-24 2010-07-16 發光元件封裝結構及其製造方法 TWI513062B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090067782A KR101081055B1 (ko) 2009-07-24 2009-07-24 발광소자 패키지 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW201110428A TW201110428A (en) 2011-03-16
TWI513062B true TWI513062B (zh) 2015-12-11

Family

ID=42937201

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099123496A TWI513062B (zh) 2009-07-24 2010-07-16 發光元件封裝結構及其製造方法

Country Status (6)

Country Link
US (1) US8659046B2 (enExample)
EP (1) EP2278633B1 (enExample)
JP (1) JP5739118B2 (enExample)
KR (1) KR101081055B1 (enExample)
CN (1) CN101964388B (enExample)
TW (1) TWI513062B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969433A (zh) * 2012-12-06 2013-03-13 上海顿格电子贸易有限公司 Led晶片模组化封装工艺
KR102008315B1 (ko) * 2013-01-23 2019-10-21 삼성전자주식회사 발광 소자 패키지
JP6294113B2 (ja) * 2014-03-17 2018-03-14 新光電気工業株式会社 キャップ及びその製造方法、半導体装置及びその製造方法
CN114038967B (zh) * 2021-07-27 2023-05-16 重庆康佳光电技术研究院有限公司 Led外延结构及其制造方法、led器件

Citations (2)

* Cited by examiner, † Cited by third party
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US6310364B1 (en) * 1998-08-03 2001-10-30 Toyoda Gosei Co., Ltd. Light-emitting apparatus
US20070262328A1 (en) * 2006-05-10 2007-11-15 Nichia Corporation Semiconductor light emitting device and a method for producing the same

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JPH07106702A (ja) * 1993-10-05 1995-04-21 Hitachi Ltd 受発光装置の製造方法
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JP4277583B2 (ja) * 2003-05-27 2009-06-10 パナソニック電工株式会社 半導体発光装置
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KR20060037638A (ko) 2004-10-28 2006-05-03 엘지이노텍 주식회사 실리콘 기판을 이용한 질화물 반도체 발광소자 및 그제조방법
JP2006237141A (ja) * 2005-02-23 2006-09-07 Stanley Electric Co Ltd サブマウント型ｌｅｄ
JP2006253288A (ja) * 2005-03-09 2006-09-21 Fuji Photo Film Co Ltd 発光装置及びその製造方法
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JP5148849B2 (ja) * 2006-07-27 2013-02-20 スタンレー電気株式会社 Ｌｅｄパッケージ、それを用いた発光装置およびｌｅｄパッケージの製造方法
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法
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KR100851183B1 (ko) * 2006-12-27 2008-08-08 엘지이노텍 주식회사 반도체 발광소자 패키지
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310364B1 (en) * 1998-08-03 2001-10-30 Toyoda Gosei Co., Ltd. Light-emitting apparatus
US20070262328A1 (en) * 2006-05-10 2007-11-15 Nichia Corporation Semiconductor light emitting device and a method for producing the same

Also Published As

Publication number Publication date
CN101964388B (zh) 2016-05-04
EP2278633A2 (en) 2011-01-26
KR101081055B1 (ko) 2011-11-07
TW201110428A (en) 2011-03-16
US8659046B2 (en) 2014-02-25
JP5739118B2 (ja) 2015-06-24
CN101964388A (zh) 2011-02-02
KR20110010296A (ko) 2011-02-01
EP2278633A3 (en) 2015-12-02
US20110018021A1 (en) 2011-01-27
EP2278633B1 (en) 2019-05-08
JP2011029640A (ja) 2011-02-10

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