TWI513062B - 發光元件封裝結構及其製造方法 - Google Patents

發光元件封裝結構及其製造方法 Download PDF

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Publication number
TWI513062B
TWI513062B TW099123496A TW99123496A TWI513062B TW I513062 B TWI513062 B TW I513062B TW 099123496 A TW099123496 A TW 099123496A TW 99123496 A TW99123496 A TW 99123496A TW I513062 B TWI513062 B TW I513062B
Authority
TW
Taiwan
Prior art keywords
light
substrate
emitting element
device package
electrode
Prior art date
Application number
TW099123496A
Other languages
English (en)
Chinese (zh)
Other versions
TW201110428A (en
Inventor
金泰潤
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201110428A publication Critical patent/TW201110428A/zh
Application granted granted Critical
Publication of TWI513062B publication Critical patent/TWI513062B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW099123496A 2009-07-24 2010-07-16 發光元件封裝結構及其製造方法 TWI513062B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090067782A KR101081055B1 (ko) 2009-07-24 2009-07-24 발광소자 패키지 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW201110428A TW201110428A (en) 2011-03-16
TWI513062B true TWI513062B (zh) 2015-12-11

Family

ID=42937201

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099123496A TWI513062B (zh) 2009-07-24 2010-07-16 發光元件封裝結構及其製造方法

Country Status (6)

Country Link
US (1) US8659046B2 (enExample)
EP (1) EP2278633B1 (enExample)
JP (1) JP5739118B2 (enExample)
KR (1) KR101081055B1 (enExample)
CN (1) CN101964388B (enExample)
TW (1) TWI513062B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969433A (zh) * 2012-12-06 2013-03-13 上海顿格电子贸易有限公司 Led晶片模组化封装工艺
KR102008315B1 (ko) * 2013-01-23 2019-10-21 삼성전자주식회사 발광 소자 패키지
JP6294113B2 (ja) * 2014-03-17 2018-03-14 新光電気工業株式会社 キャップ及びその製造方法、半導体装置及びその製造方法
CN114038967B (zh) * 2021-07-27 2023-05-16 重庆康佳光电技术研究院有限公司 Led外延结构及其制造方法、led器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310364B1 (en) * 1998-08-03 2001-10-30 Toyoda Gosei Co., Ltd. Light-emitting apparatus
US20070262328A1 (en) * 2006-05-10 2007-11-15 Nichia Corporation Semiconductor light emitting device and a method for producing the same

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JP2898320B2 (ja) * 1989-11-30 1999-05-31 京セラ株式会社 半導体素子の製造方法
JPH07106702A (ja) * 1993-10-05 1995-04-21 Hitachi Ltd 受発光装置の製造方法
JPH0983015A (ja) * 1995-09-20 1997-03-28 Oki Electric Ind Co Ltd モノリシック発光ダイオードアレイの製造方法
JPH09249499A (ja) * 1996-03-15 1997-09-22 Matsushita Electron Corp Ｉｉｉ族窒化物半導体のエピタキシャル成長方法
JPH10173236A (ja) * 1996-12-13 1998-06-26 Sharp Corp 窒化ガリウム系化合物半導体発光素子の製造方法
JP4307113B2 (ja) * 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
JP4277583B2 (ja) * 2003-05-27 2009-06-10 パナソニック電工株式会社 半導体発光装置
JP3976723B2 (ja) * 2003-10-30 2007-09-19 三洋電機株式会社 半導体素子およびその製造方法
JP4572312B2 (ja) * 2004-02-23 2010-11-04 スタンレー電気株式会社 Ｌｅｄ及びその製造方法
KR20060037638A (ko) 2004-10-28 2006-05-03 엘지이노텍 주식회사 실리콘 기판을 이용한 질화물 반도체 발광소자 및 그제조방법
JP2006237141A (ja) * 2005-02-23 2006-09-07 Stanley Electric Co Ltd サブマウント型ｌｅｄ
JP2006253288A (ja) * 2005-03-09 2006-09-21 Fuji Photo Film Co Ltd 発光装置及びその製造方法
KR100746783B1 (ko) * 2006-02-28 2007-08-06 엘지전자 주식회사 발광소자 패키지 및 그 제조방법
JP5148849B2 (ja) * 2006-07-27 2013-02-20 スタンレー電気株式会社 Ｌｅｄパッケージ、それを用いた発光装置およびｌｅｄパッケージの製造方法
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法
KR100813070B1 (ko) * 2006-09-29 2008-03-14 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
KR100850945B1 (ko) 2006-11-08 2008-08-08 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
JP4836769B2 (ja) * 2006-12-18 2011-12-14 スタンレー電気株式会社 半導体発光装置およびその製造方法
KR100851183B1 (ko) * 2006-12-27 2008-08-08 엘지이노텍 주식회사 반도체 발광소자 패키지
JP4907476B2 (ja) * 2007-03-13 2012-03-28 コバレントマテリアル株式会社 窒化物半導体単結晶
KR100896282B1 (ko) * 2007-11-01 2009-05-08 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
KR100891800B1 (ko) * 2007-11-23 2009-04-07 삼성전기주식회사 발광소자 어레이 제조방법 및 발광소자 어레이
JP5258285B2 (ja) * 2007-12-28 2013-08-07 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子
KR101114592B1 (ko) * 2009-02-17 2012-03-09 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310364B1 (en) * 1998-08-03 2001-10-30 Toyoda Gosei Co., Ltd. Light-emitting apparatus
US20070262328A1 (en) * 2006-05-10 2007-11-15 Nichia Corporation Semiconductor light emitting device and a method for producing the same

Also Published As

Publication number Publication date
TW201110428A (en) 2011-03-16
EP2278633A3 (en) 2015-12-02
KR101081055B1 (ko) 2011-11-07
JP5739118B2 (ja) 2015-06-24
KR20110010296A (ko) 2011-02-01
CN101964388A (zh) 2011-02-02
CN101964388B (zh) 2016-05-04
US8659046B2 (en) 2014-02-25
JP2011029640A (ja) 2011-02-10
US20110018021A1 (en) 2011-01-27
EP2278633A2 (en) 2011-01-26
EP2278633B1 (en) 2019-05-08

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