TWI507428B - 聚合物組成物及包含該聚合物之光阻劑 - Google Patents

聚合物組成物及包含該聚合物之光阻劑 Download PDF

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Publication number
TWI507428B
TWI507428B TW101118475A TW101118475A TWI507428B TW I507428 B TWI507428 B TW I507428B TW 101118475 A TW101118475 A TW 101118475A TW 101118475 A TW101118475 A TW 101118475A TW I507428 B TWI507428 B TW I507428B
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TW
Taiwan
Prior art keywords
group
alkyl
polymer
alkali
soluble
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TW101118475A
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English (en)
Chinese (zh)
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TW201307406A (zh
Inventor
古葛利P 波寇普茲
葛哈德 波樂斯
李銘啟
吳昌毅
劉琮
徐承柏
Original Assignee
羅門哈斯電子材料有限公司
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Publication of TW201307406A publication Critical patent/TW201307406A/zh
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • C08F214/186Monomers containing fluorine with non-fluorinated comonomers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW101118475A 2011-05-27 2012-05-24 聚合物組成物及包含該聚合物之光阻劑 TWI507428B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161490883P 2011-05-27 2011-05-27

Publications (2)

Publication Number Publication Date
TW201307406A TW201307406A (zh) 2013-02-16
TWI507428B true TWI507428B (zh) 2015-11-11

Family

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Family Applications (1)

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TW101118475A TWI507428B (zh) 2011-05-27 2012-05-24 聚合物組成物及包含該聚合物之光阻劑

Country Status (5)

Country Link
US (1) US8603728B2 (OSRAM)
EP (1) EP2527379A1 (OSRAM)
JP (1) JP5897986B2 (OSRAM)
CN (1) CN102796223A (OSRAM)
TW (1) TWI507428B (OSRAM)

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JP5793489B2 (ja) * 2011-11-30 2015-10-14 富士フイルム株式会社 感活性光線性又は感放射線性組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
US9581901B2 (en) 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
JP6267532B2 (ja) 2014-02-14 2018-01-24 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
WO2016105473A1 (en) * 2014-12-24 2016-06-30 Orthogonal, Inc. Photolithographic patterning of electronic devices
CN119684123A (zh) * 2024-08-29 2025-03-25 珠海基石科技有限公司 含氟单体及其制备方法
CN119161524B (zh) * 2024-11-19 2025-04-08 中节能万润股份有限公司 一种用于电子束光刻胶的聚合物及其制备方法和应用

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US20060127801A1 (en) * 2003-01-31 2006-06-15 Mitsubishi Rayon Co., Ltd. Resist polymer and resist composition
JP2008165146A (ja) * 2007-01-05 2008-07-17 Fujifilm Corp ポジ型感光性組成物、それを用いたパターン形成方法及び該ポジ型感光性組成物に用いられる樹脂

Also Published As

Publication number Publication date
JP5897986B2 (ja) 2016-04-06
TW201307406A (zh) 2013-02-16
EP2527379A1 (en) 2012-11-28
US20120301823A1 (en) 2012-11-29
US8603728B2 (en) 2013-12-10
JP2013010936A (ja) 2013-01-17
CN102796223A (zh) 2012-11-28

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