TWI503401B - Etching composition - Google Patents
Etching composition Download PDFInfo
- Publication number
- TWI503401B TWI503401B TW100144791A TW100144791A TWI503401B TW I503401 B TWI503401 B TW I503401B TW 100144791 A TW100144791 A TW 100144791A TW 100144791 A TW100144791 A TW 100144791A TW I503401 B TWI503401 B TW I503401B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- film
- etching liquid
- acid
- present
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010279129A JP5700784B2 (ja) | 2010-12-15 | 2010-12-15 | エッチング液組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201231625A TW201231625A (en) | 2012-08-01 |
TWI503401B true TWI503401B (zh) | 2015-10-11 |
Family
ID=46646081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100144791A TWI503401B (zh) | 2010-12-15 | 2011-12-06 | Etching composition |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5700784B2 (ko) |
KR (1) | KR20120067293A (ko) |
TW (1) | TWI503401B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6044337B2 (ja) * | 2012-12-28 | 2016-12-14 | 三菱瓦斯化学株式会社 | インジウムとガリウムおよび酸素、またはインジウムとガリウムと亜鉛および酸素からなる酸化物のエッチング液およびエッチング方法 |
TWI488943B (zh) * | 2013-04-29 | 2015-06-21 | Chi Mei Corp | 蝕刻膏組成物及其應用 |
JP6261926B2 (ja) | 2013-09-18 | 2018-01-17 | 関東化學株式会社 | 金属酸化物エッチング液組成物およびエッチング方法 |
JP6350008B2 (ja) * | 2014-06-20 | 2018-07-04 | 三菱瓦斯化学株式会社 | 少なくともインジウム、ガリウム、亜鉛およびシリコンを含む酸化物のエッチング液およびエッチング方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101223632A (zh) * | 2005-05-13 | 2008-07-16 | 塞克姆公司 | 氧化物的选择性湿蚀刻 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100248113B1 (ko) * | 1997-01-21 | 2000-03-15 | 이기원 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
KR101619380B1 (ko) * | 2009-05-14 | 2016-05-11 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 어레이 기판의 제조방법 |
-
2010
- 2010-12-15 JP JP2010279129A patent/JP5700784B2/ja active Active
-
2011
- 2011-12-06 TW TW100144791A patent/TWI503401B/zh active
- 2011-12-13 KR KR1020110133690A patent/KR20120067293A/ko not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101223632A (zh) * | 2005-05-13 | 2008-07-16 | 塞克姆公司 | 氧化物的选择性湿蚀刻 |
Also Published As
Publication number | Publication date |
---|---|
JP5700784B2 (ja) | 2015-04-15 |
TW201231625A (en) | 2012-08-01 |
JP2012129346A (ja) | 2012-07-05 |
KR20120067293A (ko) | 2012-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI495763B (zh) | 蝕刻液組成物及蝕刻方法 | |
JP5030403B2 (ja) | 酸化インジウム系透明導電膜用エッチング液組成物及びそれを用いたエッチング方法 | |
KR101518055B1 (ko) | 금속막 에칭액 조성물 | |
JP6354084B2 (ja) | エッチング液、補給液、及び配線形成方法 | |
KR101922625B1 (ko) | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 | |
JPWO2011093445A1 (ja) | 銅/チタン系多層薄膜用エッチング液 | |
TWI503401B (zh) | Etching composition | |
CN105648439A (zh) | 液体组合物及使用其的蚀刻方法 | |
TWI495762B (zh) | 蝕刻液組成物及蝕刻方法 | |
KR20140086826A (ko) | 적어도 인듐 및 갈륨을 포함하는 산화물의 에칭액 및 에칭 방법 | |
KR102368373B1 (ko) | 식각액 조성물 및 액정표시장치용 어레이 기판의 제조방법 | |
KR102203444B1 (ko) | 에칭액 조성물 및 에칭 방법 | |
JP6494349B2 (ja) | エッチング液組成物及びエッチング方法 | |
TWI634195B (zh) | 含有鋅與錫之氧化物的蝕刻液及蝕刻方法 | |
JP6417556B2 (ja) | 配線形成方法及びエッチング液 | |
JP2005116542A (ja) | エッチング液組成物 | |
US20190144748A1 (en) | Cu-MoTi ETCHING SOLUTION | |
JP6439121B2 (ja) | 配線形成方法 | |
JP2018174309A (ja) | エッチング液 | |
TWI628264B (zh) | 實質上由鋅、錫及氧形成的氧化物的蝕刻液及蝕刻方法 | |
JP6458913B1 (ja) | エッチング液 | |
CN114540816A (zh) | 一种厚铜蚀刻组合物及其应用 | |
TW201627473A (zh) | 氧化銦層蝕刻液組合物和利用其製造液晶顯示裝置的陣列基板的方法 | |
JP5544898B2 (ja) | タングステンのエッチング液 | |
JP2013060634A (ja) | エッチング液 |