TWI501311B - Focusing ring and plasma processing device - Google Patents

Focusing ring and plasma processing device Download PDF

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Publication number
TWI501311B
TWI501311B TW098120466A TW98120466A TWI501311B TW I501311 B TWI501311 B TW I501311B TW 098120466 A TW098120466 A TW 098120466A TW 98120466 A TW98120466 A TW 98120466A TW I501311 B TWI501311 B TW I501311B
Authority
TW
Taiwan
Prior art keywords
dielectric
focus ring
dielectric constant
plasma
low
Prior art date
Application number
TW098120466A
Other languages
English (en)
Chinese (zh)
Other versions
TW201011829A (en
Inventor
Masato Minami
Yoshihiko Sasaki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201011829A publication Critical patent/TW201011829A/zh
Application granted granted Critical
Publication of TWI501311B publication Critical patent/TWI501311B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW098120466A 2008-06-19 2009-06-18 Focusing ring and plasma processing device TWI501311B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008160636 2008-06-19
JP2009000606A JP5227197B2 (ja) 2008-06-19 2009-01-06 フォーカスリング及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201011829A TW201011829A (en) 2010-03-16
TWI501311B true TWI501311B (zh) 2015-09-21

Family

ID=41483470

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098120466A TWI501311B (zh) 2008-06-19 2009-06-18 Focusing ring and plasma processing device

Country Status (4)

Country Link
JP (1) JP5227197B2 (ja)
KR (1) KR20110056465A (ja)
CN (1) CN101609779B (ja)
TW (1) TWI501311B (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5885939B2 (ja) * 2010-07-20 2016-03-16 東京エレクトロン株式会社 シールド部材及びシールド部材を備えた基板載置台
JP5955062B2 (ja) * 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
JP5665726B2 (ja) * 2011-12-14 2015-02-04 株式会社東芝 エッチング装置およびフォーカスリング
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置
CN103811247B (zh) * 2014-02-17 2016-04-13 清华大学 用于等离子体刻蚀的聚焦环及具有其的等离子体刻蚀装置
JP5615454B1 (ja) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 フォーカスリング
JP5941971B2 (ja) * 2014-12-10 2016-06-29 東京エレクトロン株式会社 リング状シールド部材及びリング状シールド部材を備えた基板載置台
JP6380094B2 (ja) * 2014-12-26 2018-08-29 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6578215B2 (ja) * 2015-04-03 2019-09-18 株式会社ジャパンディスプレイ プラズマ処理装置、シールドリング、及び、シールドリング用部材
CN105551925A (zh) * 2015-12-08 2016-05-04 武汉华星光电技术有限公司 干刻蚀装置
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
JP6969182B2 (ja) * 2017-07-06 2021-11-24 東京エレクトロン株式会社 プラズマ処理装置
KR102022459B1 (ko) * 2017-11-02 2019-09-18 인베니아 주식회사 쉴드 구조체 및 이를 포함하는 플라즈마 처리 장치
KR102022458B1 (ko) * 2017-11-02 2019-09-18 인베니아 주식회사 쉴드 구조체 및 이를 포함하는 플라즈마 처리 장치
JP6932070B2 (ja) * 2017-11-29 2021-09-08 東京エレクトロン株式会社 フォーカスリング及び半導体製造装置
JP7145625B2 (ja) * 2018-03-07 2022-10-03 東京エレクトロン株式会社 基板載置構造体およびプラズマ処理装置
US11450545B2 (en) 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
KR102325223B1 (ko) * 2019-07-22 2021-11-10 세메스 주식회사 기판 처리 장치
KR20210044568A (ko) 2019-10-15 2021-04-23 삼성전자주식회사 식각 장치
KR102077975B1 (ko) * 2019-10-15 2020-02-14 주식회사 기가레인 플라즈마 처리 수직도가 향상된 플라즈마 처리 장치
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
CN111501025B (zh) * 2020-04-23 2022-05-27 北京北方华创微电子装备有限公司 沉积设备
JP2023005174A (ja) * 2021-06-28 2023-01-18 東京エレクトロン株式会社 消耗部材、プラズマ処理装置及び消耗部材の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08339895A (ja) * 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JP2003519907A (ja) * 1999-12-30 2003-06-24 ラム リサーチ コーポレーション 電極アッセンブリ
JP2007134737A (ja) * 1999-12-22 2007-05-31 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139628A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd ドライエツチング装置
US7850174B2 (en) * 2003-01-07 2010-12-14 Tokyo Electron Limited Plasma processing apparatus and focus ring
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08339895A (ja) * 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JP2007134737A (ja) * 1999-12-22 2007-05-31 Tokyo Electron Ltd プラズマ処理装置
JP2003519907A (ja) * 1999-12-30 2003-06-24 ラム リサーチ コーポレーション 電極アッセンブリ

Also Published As

Publication number Publication date
CN101609779A (zh) 2009-12-23
KR20110056465A (ko) 2011-05-30
CN101609779B (zh) 2012-07-04
JP5227197B2 (ja) 2013-07-03
JP2010028073A (ja) 2010-02-04
TW201011829A (en) 2010-03-16

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