TWI500138B - 半導體裝置及半導體裝置的製造方法 - Google Patents

半導體裝置及半導體裝置的製造方法 Download PDF

Info

Publication number
TWI500138B
TWI500138B TW098116913A TW98116913A TWI500138B TW I500138 B TWI500138 B TW I500138B TW 098116913 A TW098116913 A TW 098116913A TW 98116913 A TW98116913 A TW 98116913A TW I500138 B TWI500138 B TW I500138B
Authority
TW
Taiwan
Prior art keywords
insulator
semiconductor device
antenna
integrated circuit
conductive layer
Prior art date
Application number
TW098116913A
Other languages
English (en)
Chinese (zh)
Other versions
TW201013894A (en
Inventor
山崎舜平
及川欣聰
小路博信
鹽野入豐
加藤清
中田昌孝
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201013894A publication Critical patent/TW201013894A/zh
Application granted granted Critical
Publication of TWI500138B publication Critical patent/TWI500138B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/0772—Physical layout of the record carrier
    • G06K19/07735—Physical layout of the record carrier the record carrier comprising means for protecting against electrostatic discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/526—Electromagnetic shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW098116913A 2008-05-23 2009-05-21 半導體裝置及半導體裝置的製造方法 TWI500138B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008136082 2008-05-23

Publications (2)

Publication Number Publication Date
TW201013894A TW201013894A (en) 2010-04-01
TWI500138B true TWI500138B (zh) 2015-09-11

Family

ID=41340236

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098116913A TWI500138B (zh) 2008-05-23 2009-05-21 半導體裝置及半導體裝置的製造方法

Country Status (4)

Country Link
US (1) US8148818B2 (enExample)
JP (1) JP5380156B2 (enExample)
TW (1) TWI500138B (enExample)
WO (1) WO2009142310A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677958B (zh) * 2017-05-19 2019-11-21 學校法人早稻田大學 功率半導體模組裝置及功率半導體模組製造方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7877895B2 (en) * 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
KR20110027760A (ko) * 2008-06-06 2011-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8053253B2 (en) 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102160179B (zh) 2008-09-19 2014-05-14 株式会社半导体能源研究所 半导体装置及其制造方法
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5501174B2 (ja) * 2009-09-17 2014-05-21 株式会社半導体エネルギー研究所 半導体装置
US20120262660A1 (en) * 2010-04-09 2012-10-18 Sharp Kabushiki Kaisha Display device
US8519509B2 (en) 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5081284B2 (ja) * 2010-08-31 2012-11-28 Ｔｄｋ株式会社 信号伝送装置、フィルタ、ならびに基板間通信装置
DE102011080620B4 (de) * 2011-08-08 2014-06-05 Siemens Aktiengesellschaft Verfahren für die Beschichtung eines Isolationsbauteils und Isolationsbauteil sowie elektrisch leitfähiges Heizkabel
US8777112B2 (en) * 2011-09-15 2014-07-15 Tagstar Systems Gmbh RFID gasket structure
CN104160552B (zh) 2012-03-02 2017-05-24 派斯电子公司 沉积天线设备及方法
US10020561B2 (en) 2013-09-19 2018-07-10 Pulse Finland Oy Deposited three-dimensional antenna apparatus and methods
CN106463828B (zh) 2014-02-12 2021-04-06 脉冲芬兰有限公司 用于导电元件沉积和形成的方法和设备
US9833802B2 (en) 2014-06-27 2017-12-05 Pulse Finland Oy Methods and apparatus for conductive element deposition and formation
US11605883B2 (en) * 2017-07-28 2023-03-14 Samsung Electro-Mechanics Co., Ltd. Antenna module including a flexible substrate
CN111727502B (zh) * 2018-02-15 2024-07-12 株式会社村田制作所 高频模块
KR102551339B1 (ko) * 2019-08-19 2023-07-05 해성디에스 주식회사 플렉시블 반도체 패키지
EP4441848A4 (en) * 2021-12-01 2025-10-22 Ticona Llc ANTENNA MODULE
JP2024010377A (ja) * 2022-07-12 2024-01-24 キヤノン株式会社 画像形成装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879502A (en) * 1994-05-27 1999-03-09 Gustafson; Ake Method for making an electronic module and electronic module obtained according to the method
US20060099738A1 (en) * 2004-09-24 2006-05-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, and electric appliance
US20060246269A1 (en) * 2005-04-28 2006-11-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
CN1993829A (zh) * 2004-06-02 2007-07-04 株式会社半导体能源研究所 层压系统

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63154397A (ja) * 1986-12-19 1988-06-27 昭和電工株式会社 Ｉｃカ−ド
KR930003894B1 (ko) 1989-01-25 1993-05-15 아사히가세이고오교가부시끼가이샤 신규한 프리프레그와 복합 성형체, 및 복합 성형체의 제조방법
DE3907757A1 (de) 1989-03-10 1990-09-13 Mtu Muenchen Gmbh Schutzfolie
JPH02125343U (enExample) * 1989-03-24 1990-10-16
JPH05190582A (ja) 1992-01-08 1993-07-30 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JP3428070B2 (ja) 1993-06-07 2003-07-22 株式会社東芝 印刷配線板の製造方法
TW371285B (en) 1994-09-19 1999-10-01 Amp Akzo Linlam Vof Foiled UD-prepreg and PWB laminate prepared therefrom
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
JP3406727B2 (ja) 1995-03-10 2003-05-12 株式会社半導体エネルギー研究所 表示装置
JP3468954B2 (ja) 1995-12-01 2003-11-25 日立化成工業株式会社 Ｉｃカード
JPH1092980A (ja) 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
JPH10198778A (ja) 1997-01-14 1998-07-31 Rohm Co Ltd Ｉｃカード
JPH10211784A (ja) 1997-01-31 1998-08-11 Denso Corp Ｉｃカードおよびその製造方法
JP3500908B2 (ja) 1997-04-28 2004-02-23 松下電器産業株式会社 カードリーダ
JPH11317475A (ja) 1998-02-27 1999-11-16 Canon Inc 半導体用封止材樹脂および半導体素子
TW484101B (en) 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP2000231619A (ja) 1999-02-10 2000-08-22 Nippon Telegr & Teleph Corp <Ntt> 接触型ｉｃカード
US6224965B1 (en) 1999-06-25 2001-05-01 Honeywell International Inc. Microfiber dielectrics which facilitate laser via drilling
JP4423779B2 (ja) 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
JP4347496B2 (ja) 2000-03-31 2009-10-21 共同印刷株式会社 可逆性感熱記録媒体の製造方法
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US6800223B2 (en) 2001-08-24 2004-10-05 E. I. Du Pont De Nemours And Company Thermosetting electroconductive paste for electroconductive bump use
JP2003141486A (ja) 2001-11-08 2003-05-16 Oji Paper Co Ltd 非接触ｉｃカードとその製造方法
KR100430001B1 (ko) 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
US7485489B2 (en) 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
EP1514307A1 (en) 2002-06-19 2005-03-16 Sten Bjorsell Electronics circuit manufacture
US7132311B2 (en) 2002-07-26 2006-11-07 Intel Corporation Encapsulation of a stack of semiconductor dice
JP2004094492A (ja) 2002-08-30 2004-03-25 Konica Minolta Holdings Inc Ｉｃカード
JP4012025B2 (ja) 2002-09-24 2007-11-21 大日本印刷株式会社 微小構造体付きフィルムの製造方法と微小構造体付きフィルム
JP4828088B2 (ja) 2003-06-05 2011-11-30 凸版印刷株式会社 Ｉｃタグ
CN100461411C (zh) 2004-01-30 2009-02-11 株式会社半导体能源研究所 半导体器件
US20050233122A1 (en) 2004-04-19 2005-10-20 Mikio Nishimura Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein
US7534702B2 (en) 2004-06-29 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7591863B2 (en) 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
CN100474629C (zh) 2004-08-23 2009-04-01 株式会社半导体能源研究所 无线芯片及其制造方法
WO2006038438A2 (ja) 2004-09-14 2006-04-13 Oji Paper Co 可逆性感熱記録体及び、表示層を有する通信媒体及び記録体
US7342490B2 (en) 2004-11-23 2008-03-11 Alien Technology Corporation Radio frequency identification static discharge protection
US7727859B2 (en) 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7863188B2 (en) 2005-07-29 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1910852A4 (en) 2005-07-29 2011-10-26 Foster Miller Inc ELECTROMECHANICAL STRUCTURE AND MANUFACTURING METHOD THEREFOR
JP2007059821A (ja) 2005-08-26 2007-03-08 Shinko Electric Ind Co Ltd 配線基板の製造方法
JP5063066B2 (ja) 2005-09-30 2012-10-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2007043285A1 (en) 2005-09-30 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4251185B2 (ja) 2006-01-23 2009-04-08 ソニー株式会社 半導体集積回路カードの製造方法
JP2007241999A (ja) 2006-02-08 2007-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
EP2259213B1 (en) 2006-02-08 2015-12-23 Semiconductor Energy Laboratory Co., Ltd. RFID device
TWI431726B (zh) 2006-06-01 2014-03-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
EP2038818B1 (en) * 2006-06-26 2014-10-15 Semiconductor Energy Laboratory Co., Ltd. Paper including semiconductor device and manufacturing method thereof
KR101381359B1 (ko) 2006-08-31 2014-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 클록 생성 회로 및 이 클록 생성 회로를 구비한 반도체장치
JP5063256B2 (ja) * 2006-08-31 2012-10-31 株式会社半導体エネルギー研究所 クロック生成回路、クロック生成回路が有するカウンター回路、及び半導体装置
EP2372756A1 (en) 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1976001A3 (en) 2007-03-26 2012-08-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2001047A1 (en) 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR101582503B1 (ko) 2008-05-12 2016-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2009142309A1 (en) 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5248412B2 (ja) 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879502A (en) * 1994-05-27 1999-03-09 Gustafson; Ake Method for making an electronic module and electronic module obtained according to the method
CN1993829A (zh) * 2004-06-02 2007-07-04 株式会社半导体能源研究所 层压系统
US20060099738A1 (en) * 2004-09-24 2006-05-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, and electric appliance
US20060246269A1 (en) * 2005-04-28 2006-11-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677958B (zh) * 2017-05-19 2019-11-21 學校法人早稻田大學 功率半導體模組裝置及功率半導體模組製造方法

Also Published As

Publication number Publication date
JP5380156B2 (ja) 2014-01-08
TW201013894A (en) 2010-04-01
WO2009142310A1 (en) 2009-11-26
US8148818B2 (en) 2012-04-03
JP2010003296A (ja) 2010-01-07
US20090289340A1 (en) 2009-11-26

Similar Documents

Publication Publication Date Title
TWI500138B (zh) 半導體裝置及半導體裝置的製造方法
CN102037556B (zh) 半导体器件
TWI452675B (zh) 半導體裝置和其製造方法
US8102034B2 (en) Semiconductor device and manufacturing method of the same
TWI489534B (zh) 半導體裝置的製造方法
US8053253B2 (en) Method for manufacturing semiconductor device
JP5415713B2 (ja) 半導体装置
JP5306705B2 (ja) 半導体装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees