TWI490663B - 微影裝置及器件製造方法 - Google Patents

微影裝置及器件製造方法 Download PDF

Info

Publication number
TWI490663B
TWI490663B TW099118276A TW99118276A TWI490663B TW I490663 B TWI490663 B TW I490663B TW 099118276 A TW099118276 A TW 099118276A TW 99118276 A TW99118276 A TW 99118276A TW I490663 B TWI490663 B TW I490663B
Authority
TW
Taiwan
Prior art keywords
radiation
gas
cleaning device
constructed
laser cleaning
Prior art date
Application number
TW099118276A
Other languages
English (en)
Chinese (zh)
Other versions
TW201109854A (en
Inventor
Nicolaas Arnoldus Lammers
Luigi Scaccabarozzi
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW201109854A publication Critical patent/TW201109854A/zh
Application granted granted Critical
Publication of TWI490663B publication Critical patent/TWI490663B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW099118276A 2009-06-23 2010-06-04 微影裝置及器件製造方法 TWI490663B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21961809P 2009-06-23 2009-06-23

Publications (2)

Publication Number Publication Date
TW201109854A TW201109854A (en) 2011-03-16
TWI490663B true TWI490663B (zh) 2015-07-01

Family

ID=43386043

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099118276A TWI490663B (zh) 2009-06-23 2010-06-04 微影裝置及器件製造方法

Country Status (6)

Country Link
US (1) US9563137B2 (ja)
JP (1) JP5658245B2 (ja)
KR (1) KR20120101982A (ja)
CN (1) CN102804070B (ja)
TW (1) TWI490663B (ja)
WO (1) WO2010149438A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI651146B (zh) * 2017-11-07 2019-02-21 財團法人工業技術研究院 雷射清潔裝置及其方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2642494C2 (ru) * 2012-03-20 2018-01-25 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Агрегат и способ переноса радикалов
US9790090B2 (en) 2013-02-13 2017-10-17 Lawrence Livermore National Security, Llc Laser-induced gas plasma machining
CN105514023B (zh) * 2014-09-22 2018-07-24 上海和辉光电有限公司 一种接触孔界面处理方法
KR102402035B1 (ko) 2014-11-14 2022-05-26 삼성전자주식회사 펠리클을 포함하는 마스크, 펠리클 리페어 장치, 및 기판 제조 설비
JP2017022343A (ja) * 2015-07-15 2017-01-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置、ウエハリフトピン穴清掃治具
CN105689331A (zh) * 2016-04-15 2016-06-22 南京国轩电池有限公司 一种锂电池注液孔残液的清洗方法
JP2022515489A (ja) * 2018-12-27 2022-02-18 エーエスエムエル ホールディング エヌ．ブイ． リソグラフィ装置内の粒子をその場で除去するための装置および方法
DE102019006322B3 (de) * 2019-09-04 2020-10-22 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur Behandlung einer Festkörperoberfläche
CN111992543B (zh) * 2020-08-21 2021-10-22 厦门理工学院 一种激光等离子体光丝清洗法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000515811A (ja) * 1996-07-26 2000-11-28 カールドロン リミテッド パートナーシップ 傾斜した角度で照射される放射線による材料の除去
JP2003007655A (ja) * 2001-05-19 2003-01-10 Imt Co Ltd レーザーを用いる乾式表面クリーニング装置
JP2003224067A (ja) * 2002-01-18 2003-08-08 Asml Netherlands Bv リソグラフィ装置、装置の洗浄法、デバイスの製造方法、およびその方法により製造されるデバイス
JP2003303800A (ja) * 2002-04-11 2003-10-24 Sony Corp 表面洗浄装置および表面洗浄方法
JP2006108696A (ja) * 2004-10-05 2006-04-20 Asml Netherlands Bv リソグラフィ装置、クリーニング・システム、及びリソグラフィ装置の部品から、その場で汚染物を取り除くクリーニング方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023424A (en) 1990-01-22 1991-06-11 Tencor Instruments Shock wave particle removal method and apparatus
AU7682594A (en) * 1993-09-08 1995-03-27 Uvtech Systems, Inc. Surface processing
JP2001300453A (ja) * 2000-04-20 2001-10-30 Canon Inc 物品表面の洗浄方法と洗浄装置、およびこれらによる光学素子の製造方法と装置、並びに光学系、露光方法、露光装置、デバイス製造方法
JP2002343761A (ja) 2001-05-16 2002-11-29 Kubota Corp レーザクリーニング装置およびレーザクリーニング方法
US6635845B2 (en) * 2001-05-19 2003-10-21 Imt Co., Ltd. Dry surface cleaning apparatus using a laser
KR100467977B1 (ko) * 2001-05-19 2005-01-24 주식회사 아이엠티 충격파를 이용한 건식 표면 클리닝 장치
US6635844B2 (en) 2002-01-03 2003-10-21 United Microelectronics Corp. Apparatus for on-line cleaning a wafer chuck with laser
EP1329773A3 (en) * 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
AU2003251606A1 (en) * 2002-07-25 2004-02-16 Arkansas State University Method and apparatus for removing minute particle(s) from a surface
JP4491382B2 (ja) 2004-06-17 2010-06-30 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、デバイス製造方法およびペリクルを有するマスク
US7629556B2 (en) 2005-12-16 2009-12-08 Sematech, Inc. Laser nozzle methods and apparatus for surface cleaning

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000515811A (ja) * 1996-07-26 2000-11-28 カールドロン リミテッド パートナーシップ 傾斜した角度で照射される放射線による材料の除去
JP2003007655A (ja) * 2001-05-19 2003-01-10 Imt Co Ltd レーザーを用いる乾式表面クリーニング装置
JP2003224067A (ja) * 2002-01-18 2003-08-08 Asml Netherlands Bv リソグラフィ装置、装置の洗浄法、デバイスの製造方法、およびその方法により製造されるデバイス
JP2003303800A (ja) * 2002-04-11 2003-10-24 Sony Corp 表面洗浄装置および表面洗浄方法
JP2006108696A (ja) * 2004-10-05 2006-04-20 Asml Netherlands Bv リソグラフィ装置、クリーニング・システム、及びリソグラフィ装置の部品から、その場で汚染物を取り除くクリーニング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI651146B (zh) * 2017-11-07 2019-02-21 財團法人工業技術研究院 雷射清潔裝置及其方法

Also Published As

Publication number Publication date
US20120086929A1 (en) 2012-04-12
CN102804070B (zh) 2016-06-08
JP2012531054A (ja) 2012-12-06
KR20120101982A (ko) 2012-09-17
JP5658245B2 (ja) 2015-01-21
WO2010149438A1 (en) 2010-12-29
US9563137B2 (en) 2017-02-07
TW201109854A (en) 2011-03-16
CN102804070A (zh) 2012-11-28

Similar Documents

Publication Publication Date Title
TWI490663B (zh) 微影裝置及器件製造方法
KR101652361B1 (ko) 방사선 소스, 리소그래피 장치 및 디바이스 제조방법
TWI534553B (zh) 收集器鏡總成及產生極紫外光輻射之方法
TWI394012B (zh) 微影裝置及元件製造方法
JP5732393B2 (ja) リソグラフィ装置、およびデバイス製造方法
JP2006332654A (ja) 放射システム及びリソグラフィ装置
JP2006332654A5 (ja)
US8368040B2 (en) Radiation system and lithographic apparatus
JP5162546B2 (ja) 放射源及びリソグラフィ装置
JP4966342B2 (ja) 放射源、放射を生成する方法およびリソグラフィ装置
JP4446996B2 (ja) 放射システムおよびリソグラフィ装置
KR20120045025A (ko) 극자외(ｅｕｖ) 방사선 시스템 및 리소그래피 장치
CN108617070B (zh) 源收集器设备、光刻设备和方法
JP2002110539A (ja) リソグラフィ投影装置、デバイス製造方法、およびそれらによって製造されたデバイス
JP2010062560A5 (ja)
JP5740106B2 (ja) Ｅｕｖ放射発生装置
JP2013524525A (ja) Ｅｕｖ放射源およびｅｕｖ放射生成方法
KR20100102682A (ko) 극자외 방사선 소스 및 극자외 방사선을 생성하는 방법
US20120182537A1 (en) Spectral purity filter, lithographic apparatus, and device manufacturing method
CN114450636A (zh) 检测辐射束的光刻设备和方法
TW201337470A (zh) 輻射源與用於微影裝置及元件製造之方法
NL2005516A (en) Lithographic apparatus and device manufacturing method.
NL2010236A (en) Lithographic apparatus and method.
NL2007864A (en) Radiation source.
NL2005763A (en) Lithographic apparatus.

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees