TWI483359B - 線路載板及應用此線路載板之半導體封裝結構 - Google Patents

線路載板及應用此線路載板之半導體封裝結構 Download PDF

Info

Publication number
TWI483359B
TWI483359B TW098105657A TW98105657A TWI483359B TW I483359 B TWI483359 B TW I483359B TW 098105657 A TW098105657 A TW 098105657A TW 98105657 A TW98105657 A TW 98105657A TW I483359 B TWI483359 B TW I483359B
Authority
TW
Taiwan
Prior art keywords
bonding pad
wafer
layer
substrate
bump
Prior art date
Application number
TW098105657A
Other languages
English (en)
Other versions
TW201032306A (en
Inventor
Chien Liu
Chih Ming Chung
Original Assignee
Advanced Semiconductor Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW098105657A priority Critical patent/TWI483359B/zh
Priority to US12/683,613 priority patent/US8384204B2/en
Publication of TW201032306A publication Critical patent/TW201032306A/zh
Application granted granted Critical
Publication of TWI483359B publication Critical patent/TWI483359B/zh

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3452Solder masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05571Disposition the external layer being disposed in a recess of the surface
    • H01L2224/05572Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48229Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10674Flip chip
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2081Compound repelling a metal, e.g. solder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0315Oxidising metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

線路載板及應用此線路載板之半導體封裝結構
本發明是有關於一種線路載板及應用此線路載板之半導體封裝結構,且特別是有關於一種在基板之接合墊上形成一棕化層的線路載板及應用此線路載板之半導體封裝結構。
覆晶接合技術(flip chip interconnect technology)係為一種將晶片(die)連接到承載器(carrier)的封裝技術,其主要係將晶片之多個銲墊(pad),利用面陣列(area array)的排列方式,配置於晶片之主動表面(active surface)上,並在各個銲墊上分別依序形成球底金屬層(Under Bump Metallurgy,UBM)及凸塊(bump),其例如為銲料凸塊(solder bump),接著將晶片翻面(flip)之後,再利用這些凸塊來將晶片之主動表面上的這些銲墊分別電性及結構性地連接至一承載器(例如為基板(substrate)或印刷電路板(printed circuit board,PCB))之表面的多個接點。值得注意的是,覆晶接合技術可適用於高接腳數(high pin count)之晶片封裝結構,並具有縮小封裝面積及縮短訊號傳輸路徑等優點。
圖1A繪示為習知之一種線路載板與對接晶片上之凸塊未接合前的剖面示意圖。圖1B繪示為圖1A中所示之線路載板與對接晶片上之凸塊接合後的剖面示意圖。請參考圖1A所示,線路載板100主要包含一基板110、多個接合墊(bonding pad)120以及一銲罩層(solder mask)130。其中基板110包含多個導線層、多個絕緣層及多個導電孔(conductive via)(圖均未繪示),而每一絕緣層配置於相鄰兩導線層之間,且每一導電孔穿過至少一絕緣層,以連接至少兩導線層。此外,這些接合墊120a配置於基板110之表面112上,用以分別連接對接晶片200上的多個凸塊(bump)210,例如為覆晶接合用之銲料凸塊(flip chip solder-bump)。而這些接合墊120a可由基板110最外層的導線層120所構成。此外,由於基板110上之導線層120的材質通常為銅,所以接合墊120a之材質亦為銅。銲罩層130全面性地覆蓋於基板110的表面112上,且銲罩層130具有多個開口132以分別暴露出接合墊120a。
如圖1B所示,在進行迴焊製程以將凸塊210與接合墊120a連結時,由於凸塊210與接合墊120a之間結合的狀況很好,因此,凸塊210會整個塌陷下來,且包覆住整個接合墊120a。而此將會降低線路載板100與對接晶片200之間的間距,進而增加後續製程之困難度。
此外,由於在製作銲罩層130時,其開口132會有製作公差,且銲罩層130可能會發生偏移(shift)的情形。對於微間距(fine pitch)的元件而言,上述這些因素皆會提升線路載板製作時之困難度。
本發明提供一種線路載板及應用此線路載板之半導體封裝結構。此線路載板主要是在其接合墊上形成一棕化層,以解決習知技術中因凸塊塌陷而造成線路載板與晶片之間的間距縮小,以及製作銲罩層時可能會發生偏移的問題。
本發明提出一種線路載板,適於連接一凸塊。此線路載板包括一基板與至少一接合墊。基板具有一表面。此接合墊配置於基板之表面,以連接凸塊。其中,此接合墊之一表面具有一棕化層。
在本發明之一實施例中,接合墊之材質包括銅。
在本發明之一實施例中,棕化層之材質為氧化銅。
本發明另提出一種半導體封裝結構,包括一晶片、一線路載板以及一封裝膠體。晶片之一主動面上具有至少一凸塊。線路載板用以承載晶片,且包括一基板與至少一配置於基板表面之接合墊。此接合墊之一表面具有一棕化層,且接合墊連接相對應之凸塊,使線路載板透過凸塊與晶片電性連接。封裝膠體配置於線路載板上,以包覆晶片。
在本發明之一實施例中,接合墊之材質包括銅。
在本發明之一實施例中,棕化層之材質為氧化銅。
在本發明之一實施例中,半導體封裝結構更包括一底膠,填充於晶片與線路載板之間。
本發明之線路載板及應用此線路載板之半導體封裝結構主要是在基板的表層線路及接合墊上形成一棕化層。當線路載板與對接晶片接合時,凸塊能直接站在接合墊表面之棕化層上,以增加線路載板與對接晶片之間的間距,而使得後續製程容易進行。
此外,在線路載板之表層線路及接合墊上形成棕化層之後,線路載板上不需再形成銲罩層而能直接與對接晶片連接,如此,即可避免習知技術中因採用銲罩層而遭遇到之製作公差及偏移的問題。
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。
圖2繪示為根據本發明之一實施例的一種線路載板之剖面示意圖。請參考圖2所示,此線路載板300包括一基板310與至少一接合墊320。以下將搭配圖示說明線路載板300所包含之各元件以及元件之間的連接關係。此外,在此實施例中,是以多個接合墊320為例以作說明,然而,本發明對於配置於基板310上之接合墊320的數目不作任何限制。
基板310包含多數個導線層、多數個絕緣層及多數個導電孔(圖均未示),而每一絕緣層係配置於相鄰兩導線層之間,且每一導電孔係穿過絕緣層而與至少兩導線層相互連接。這些接合墊320配置於基板310之表面310a上,用以連接對接晶片(圖中未示)上覆晶接合用的凸塊。而這些接合墊320可由基板310之最外層的表層線路層所構成,由於基板310之表層線路層的材質通常為銅,所以接合墊320之材質亦為銅。而這些接合墊320的表面上形成有一棕化層322。此棕化層322可藉由對基板310上之表層線路層320a及接合墊320進行一棕化處理而形成。在此實施例中,棕化層322之材質為氧化銅。
由於在利用迴焊製程將線路載板300之接合墊320與對接晶片上的凸塊接合時,凸塊會站在接合墊320表面之棕化層322上,而不會整個塌陷下來,且包覆住整個接合墊320,如此,將有助於增加線路載板300與對接晶片之間的間距,使後續填膠的製程更容易進行。
圖3繪示為根據本發明之一實施例的一種半導體封裝結構的剖面示意圖。此半導體封裝結構主要是利用圖2中所示之線路載板與對接晶片連接,以避免習知技術中凸塊與接合墊之間結合的狀況太好,而發生凸塊坍塌的情形。
請參考圖3所示,此半導體封裝結構600主要包含一如圖2中所示之線路載板300、一晶片400以及一封裝膠體500。晶片400之一主動面400a上具有多個凸塊410。線路載板300即用以承載晶片400,其具有一基板310及配置於基板310表面之接合墊320。同樣地,接合墊320的表面形成有一棕化層322。而接合墊320會連接相對應的凸塊410,使線路載板300透過凸塊410與晶片400電性連接。如圖3中所示,由於在接合墊320上有形成一棕化層322的原故,因此,凸塊410會站在接合墊320表面的棕化層322上,而不會整個塌陷下來,以增加線路載板300與晶片400之間的間距,使後續填膠的製程更容易進行。
封裝膠體500配置於線路載板300上。此封裝膠體500會包覆住整個晶片400,以保護整個封裝結構免於受損及受潮。在此實施例中,是先於線路載板300與晶片400之間填充一底膠700,之後,再於線路載板300上形成封裝膠體500,以包覆整個晶片400。然而,亦可直接在線路載板上300形成封裝膠體500,使其亦填充於線路載板300與晶片400之間即可。
綜上所述,本發明之線路載板及應用此線路載板之半導體封裝結構主要是在基板的表層線路及接合墊上形成一棕化層。當線路載板與對接晶片接合時,凸塊能直接站在接合墊表面之棕化層上,以增加線路載板與對接晶片之間的間距,而使得後續製程容易進行。此外,在線路載板之表層線路及接合墊上形成棕化層之後,線路載板上不需再形成銲罩層而能直接與對接晶片連接,如此,即可避免習知技術中因採用銲罩層而遭遇到之製作公差及偏移的問題。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100...線路載板
110...基板
112...表面
120...導線層
120a...接合墊
130...銲罩層
132...開口
200...對接晶片
210...凸塊
300...線路載板
310...基板
310a...表面
320...接合墊
320a‧‧‧表層線路層
322‧‧‧棕化層
400‧‧‧晶片
400a‧‧‧主動面
410‧‧‧凸塊
500‧‧‧封裝膠體
600‧‧‧半導體封裝結構
700‧‧‧底膠
圖1A繪示為習知之一種線路載板與對接晶片上之凸塊未接合前的剖面示意圖。
圖1B繪示為圖1A中所示之線路載板與對接晶片上之凸塊接合後的剖面示意圖。
圖2繪示為根據本發明之一實施例的一種線路載板之剖面示意圖。
圖3繪示為根據本發明之一實施例的一種半導體封裝結構的剖面示意圖。
300...線路載板
310...基板
310a...表面
320...接合墊
320a...表面
322...棕化層

Claims (7)

  1. 一種線路載板,適於連接一凸塊,該線路載板包括:一基板,具有一表面;以及至少一接合墊,配置於該基板之該表面,以連接該凸塊,其中該接合墊之一表面具有一棕化層位於其上而該棕化層完全覆蓋該接合墊之該表面,該接合墊並未被一銲罩層覆蓋。
  2. 如申請專利範圍第1項所述之線路載板,其中該接合墊之材質包括銅。
  3. 如申請專利範圍第1項所述之線路載板,其中該棕化層之材質為氧化銅。
  4. 一種半導體封裝結構,包括:一晶片,該晶片之一主動面上具有至少一凸塊;一線路載板,用以承載該晶片,該線路載板包括:一基板,具有一表面;以及至少一接合墊,配置於該基板之該表面,其中該接合墊之一表面具有一棕化層位於其上而該棕化層完全覆蓋該接合墊之該表面,該接合墊並未被一銲罩層覆蓋,且該接合墊連接相對應之該凸塊,使該線路載板透過該凸塊與該晶片電性連接;以及一封裝膠體,配置於該線路載板上,以包覆該晶片。
  5. 如申請專利範圍第4項所述之半導體封裝結構,其中該接合墊之材質包括銅。
  6. 如申請專利範圍第4項所述之半導體封裝結構,其 中該棕化層之材質為氧化銅。
  7. 如申請專利範圍第4項所述之半導體封裝結構,更包括一底膠,填充於該晶片與該線路載板之間。
TW098105657A 2009-02-23 2009-02-23 線路載板及應用此線路載板之半導體封裝結構 TWI483359B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW098105657A TWI483359B (zh) 2009-02-23 2009-02-23 線路載板及應用此線路載板之半導體封裝結構
US12/683,613 US8384204B2 (en) 2009-02-23 2010-01-07 Circuit carrier and semiconductor package using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098105657A TWI483359B (zh) 2009-02-23 2009-02-23 線路載板及應用此線路載板之半導體封裝結構

Publications (2)

Publication Number Publication Date
TW201032306A TW201032306A (en) 2010-09-01
TWI483359B true TWI483359B (zh) 2015-05-01

Family

ID=42630250

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098105657A TWI483359B (zh) 2009-02-23 2009-02-23 線路載板及應用此線路載板之半導體封裝結構

Country Status (2)

Country Link
US (1) US8384204B2 (zh)
TW (1) TWI483359B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101185458B1 (ko) * 2011-02-07 2012-10-02 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US9478498B2 (en) * 2013-08-05 2016-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Through package via (TPV)
TWI566352B (zh) * 2014-05-01 2017-01-11 矽品精密工業股份有限公司 封裝基板及封裝件
KR102306673B1 (ko) 2014-09-22 2021-09-29 삼성전자주식회사 반도체 패키지 및 그 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170172B2 (en) * 2001-12-13 2007-01-30 Nec Electronics Corporation Semiconductor device having a roughened surface
TW200820401A (en) * 2006-10-23 2008-05-01 Via Tech Inc Chip package and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW466724B (en) 2000-12-06 2001-12-01 Kinsus Interconnect Tech Corp Micro-range flip chip structure and the manufacturing method thereof
US6510976B2 (en) * 2001-05-18 2003-01-28 Advanpack Solutions Pte. Ltd. Method for forming a flip chip semiconductor package
TWI236746B (en) 2004-08-03 2005-07-21 Advanced Semiconductor Eng Circuit carrier and bonding pad thereof
US20080185739A1 (en) * 2007-02-03 2008-08-07 Chien-Wei Chang Semiconductor Substrate Having Enhanced Adhesion And Method For Manufacturing The Same
US7829384B2 (en) * 2007-09-25 2010-11-09 Stats Chippac, Ltd. Semiconductor device and method of laser-marking wafers with tape applied to its active surface

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170172B2 (en) * 2001-12-13 2007-01-30 Nec Electronics Corporation Semiconductor device having a roughened surface
TW200820401A (en) * 2006-10-23 2008-05-01 Via Tech Inc Chip package and manufacturing method thereof

Also Published As

Publication number Publication date
US8384204B2 (en) 2013-02-26
TW201032306A (en) 2010-09-01
US20100213598A1 (en) 2010-08-26

Similar Documents

Publication Publication Date Title
US11121108B2 (en) Flip chip package utilizing trace bump trace interconnection
TWI418003B (zh) 嵌埋電子元件之封裝結構及其製法
TWI497669B (zh) 形成於半導體基板上之導電凸塊及其製法
TWI654730B (zh) 封裝結構及其製造方法
TWI485840B (zh) 具有彈性導電體之堆疊式封裝
US8378482B2 (en) Wiring board
US8592968B2 (en) Semiconductor device, semiconductor package, interposer, semiconductor device manufacturing method and interposer manufacturing method
JP2011142185A (ja) 半導体装置
US20240145346A1 (en) Semiconductor device with through-mold via
KR20110091194A (ko) 적층 반도체 패키지
TWI483359B (zh) 線路載板及應用此線路載板之半導體封裝結構
CN108962855B (zh) 半导体结构、半导体元件及其形成方法
JP3847602B2 (ja) 積層型半導体装置及びその製造方法並びに半導体装置搭載マザーボード及び半導体装置搭載マザーボードの製造方法
TWI394252B (zh) 封裝基板結構
TWI402955B (zh) 晶片封裝結構及封裝基板
KR20100000328A (ko) 조인트 신뢰성이 향상된 반도체 패키지 및 그 제조방법
JP2014103244A (ja) 半導体装置および半導体チップ
TWI440145B (zh) 金屬柱焊接晶片連接之封裝構造及其電路基板
TWI501370B (zh) 半導體封裝件及其製法
TWI423405B (zh) 具載板之封裝結構
JP4791104B2 (ja) 半導体チップおよび半導体チップの製造方法
JP2013110264A (ja) 半導体装置及び半導体装置の製造方法
TWI841184B (zh) 半導體封裝及其製造方法
KR101169688B1 (ko) 반도체 장치 및 적층 반도체 패키지
TWI401787B (zh) 封裝基板之製法