CN108962855B - 半导体结构、半导体元件及其形成方法 - Google Patents

半导体结构、半导体元件及其形成方法 Download PDF

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CN108962855B
CN108962855B CN201710631118.8A CN201710631118A CN108962855B CN 108962855 B CN108962855 B CN 108962855B CN 201710631118 A CN201710631118 A CN 201710631118A CN 108962855 B CN108962855 B CN 108962855B
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layer
semiconductor
conductive
substrate
conductive bump
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CN108962855A (zh
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林柏均
朱金龙
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Nanya Technology Corp
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Nanya Technology Corp
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Abstract

本发明公开了一种半导体结构、半导体元件及其形成方法。半导体元件包含两个彼此横向连接的半导体结构，且各半导体结构包含半导体基板以及第一导电凸块。半导体基板具有集成电路以及互连金属层，其中斜角表面形成在半导体基板的边缘上。第一导电凸块经由互连金属层电性连接至集成电路，并位于斜角表面上，其中第一导电凸块的轮廓延伸超出半导体基板的边缘的侧表面。此两个半导体结构通过其相接合的第一导电凸块横向连接。本发明的半导体元件，能够建立与导电凸块的横向连接，以节省成本。

Description

半导体结构、半导体元件及其形成方法
技术领域
本发明是关于一种半导体元件、半导体结构及其形成方法。
背景技术
随着半导体封装技术的快速发展，半导体产品越来越紧密地集成化，并且随着微型化而提供更好的性能。因此，开发了用于形成诸如引线接合，覆晶技术和晶圆级封装的半导体封装的各种方法以满足各种要求。然而，半导体封装的公知结构和制造方法显然具有不便和缺陷，并且需要进一步的改进。举例而言，在晶圆级封装的方法中，以具有凸块的晶片接合只能将半导体元件与垂直堆叠的物体连接起来，而需要重分布层以将半导体元件横向连接到物体上，从而增加半导体封装的制造成本。
为了解决上述问题，本领域技术人员相关领域莫不费尽心思开发，但仍然缺乏克服这些问题的合适解决方案。因此，如何有效地应对上述问题，实属当前重要研发课题之一，也成为当前相关领域亟需改进的目标。
发明内容
本发明的一个目的涉及一种半导体结构，其能够将半导体构件并排连接至另一物体。
本发明另一个目的涉及一种半导体元件，其能够建立与导电凸块的横向连接，以节省成本。
本发明又一个目的涉及一种半导体元件的形成方法，其采用在半导体结构的边缘上形成导电凸块的步骤，以建立横向连接，并节省成本。
本发明提供一种半导体结构。半导体结构包含半导体基板以及第一导电凸块。半导体基板具有集成电路以及互连金属层，其中斜角表面形成在半导体基板的边缘上。第一导电凸块经由互连金属层电性连接至集成电路，并位于斜角表面上，其中第一导电凸块的轮廓延伸超出半导体基板的边缘的一侧表面。
本发明提供一种半导体元件。半导体元件包含两个彼此横向连接的半导体结构，且各半导体结构包含半导体基板以及第一导电凸块。半导体基板具有集成电路以及互连金属层，其中斜角表面形成在半导体基板的边缘上。第一导电凸块经由互连金属层电性连接至集成电路，并位于斜角表面上，其中第一导电凸块的轮廓延伸超出半导体基板的边缘的一侧表面。两个半导体结构通过两个半导体结构的相接合的多个第一导电凸块横向连接。
本发明提供一种半导体元件的形成方法。方法包含下列步骤。在至少一个半导体基板的边缘上形成斜角表面，其中各半导体基板具有一集成电路以及互连金属层。在斜角表面上形成第一导电凸块，其中第一导电凸块经由互连金属层电性连接至集成电路，并位于斜角表面上，其中第一导电凸块的轮廓延伸超出边缘的一侧表面。
在本发明的一个或多个实施例中，上述的半导体基板包含基板、保护层、第一导体层以及第二导体层。保护层位于基板上。第一导体层位于保护层上。第二导体层位于保护层以及第一导体层上，其中第二导体层电性连接至第一导体层。
在本发明的一个或多个实施例中，上述的基板具有倾斜面，部分第一导体层具有第一部分以及第二部分，第一部分位于基板的倾斜面上，第二部分位于基板的水平上表面上，且第一导体层的第一部分的上表面为斜角表面。
在本发明的一个或多个实施例中，上述的保护层包含重分布层。
在本发明的一个或多个实施例中，上述的半导体结构，还包含多个第二导电凸块，其位于半导体基板的上表面上，且电性连接至第二导体层。
在本发明的一个或多个实施例中，上述的各第二导电凸块的最大垂直高度大于第一导电凸块的最大垂直高度。
在本发明的一个或多个实施例中，上述的半导体结构还包含印刷电路板，其具有多个焊垫，多个焊垫接触并电性连接至多个第二导电凸块，而不接触第一导电凸块。
在本发明的一个或多个实施例中，上述的半导体元件的形成方法还包含下列步骤。半导体元件包含两个半导体结构，且各半导体结构包含各半导体基板，以及接合两个半导体结构的多个第一导电凸块以横向连接两个半导体结构。
在本发明的一个或多个实施例中，在至少一个半导体基板的边缘上形成上述的斜角表面的方法包含下列步骤。提供基板。在基板上形成保护层。在基板的边缘上形成倾斜面。在于保护层上形成金属层。图案化金属层以在保护层上形成第一导体层，其中第一导体层的一部分在基板的边缘上的上表面为斜角表面。在保护层以及第一导体层上形成第二导体层，其中第二导体层电性连接至第一导体层。
在本发明的一个或多个实施例中，上述的半导体元件的形成方法还包含下列步骤。在半导体基板的水平上表面上形成多个第二导电凸块，其中多个第二导电凸块电性连接至第二导体层。
在本发明的一个或多个实施例中，上述的半导体元件的形成方法还包含下列步骤。提供印刷电路板，其具有多个焊垫。多个焊垫被电性连接至多个第二导电凸块，其中多个焊垫接触多个第二导电凸块，并而不接触第一导电凸块。
基于上述，通过第一导电凸块在斜角表面上的配置，半导体结构能够将半导体构件并排连接至另一物体。举例而言，当半导体元件包括两个上述的半导体结构，且这两个半导体基板的斜角表面朝向彼此时，在这两个半导体基板的斜角表面上的第一导电凸块可以被接合，以便横向连接这两个半导体结构。如此一来，这两个半导体结构通过它们各自被接合的第一导电凸块而横向连接，并且因此不需要配置额外的重分布层来将半导体构件横向连接到另一物体。因此，半导体元件能够通过导电凸块而横向连接，而能节省成本。
以下将以实施方式对上述的说明作详细的描述，并对本发明的技术方案提供还进一步的解释。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能还明显易懂，结合附图说明如下：
图1为依据本发明的一实施例的半导体结构的剖面示意图；
图2A至图2F为依据本发明的一实施例的半导体结构的形成方法的各种制造步骤的剖面示意图；
图3为依据本发明的一实施例的半导体元件的剖面示意图；
图4为依据本发明的另一实施例的半导体元件的剖面示意图；
图5A与图5B为依据本发明的一实施例的半导体元件的形成方法的各种制造步骤的流程图。
具体实施方式
为了使本发明的叙述还加详尽与完备，可参照所附的附图及以下所述各种实施例，附图中相同的号码代表相同或相似的元件。另一方面，众所周知的元件与步骤并未描述于实施例中，以避免对本发明造成不必要的限制。
请参照图1，图1为依据本发明的一实施例的半导体结构100的剖面示意图。半导体结构100包括半导体基板110、第一导电凸块120和多个第二导电凸块130。在本实施例中，第一导电凸块120和第二导电凸块130由焊料形成，锡铅或其它合适的材料，但是本发明不限于此。举例而言，在不同的实施例中，第一导电凸块120和第二导电凸块130可包含焊料凸块或焊料浆料，其可被安装或印刷到半导体基板110的水平上表面SU上。
如图1所示，半导体基板110具有集成电路111以及互连金属层113，并且还包括基板112、保护层114、第一导体层116以及第二导体层118。保护层114位于基板112上。第一导体层116位于保护层114上。第二导体层118位于保护层114和第一导体层116上，其中第二导体层118电性连接到第一导体层116。
此外，如图1所示，斜角表面115形成在半导体基板110的边缘117上。第一导电凸块120经由互连金属层113电性连接到集成电路111，并且位于斜角表面115上，其中第一导电凸块120的轮廓延伸超过边缘117的一侧表面SE。第二导电凸块130位于半导体基板110的上表面SU上，并且电性连接到第二导体层118。
以下将参照图2A至图2F进一步说明形成半导体结构100的过程。
图2A至图2F为依据本发明的一实施例的半导体结构100的形成方法的各种制造步骤的剖面示意图。请参照图2A，提供基板112，且在基板112上形成保护层114。在本实施例中，半导体基板110具有集成电路111和互连金属层113。举例而言，如图2A所示，保护层114还包括重分布层RDL，其可以连接到半导体基板110内部的集成电路111。
请参照图2B，在保护层114上形成金属层116'，在基板112的边缘117上且形成倾斜面IP。举例而言，在本实施例中，形成倾斜面IP的方法包括以使用具有倾斜角的激光来对基板112钻孔。接着，切割基板112以使部分倾斜面IP保留在边缘117上。如此一来，就形成了在基板112的边缘117上的倾斜面IP。
请参照图2C，图案化金属层116'以在保护层114上形成第一导体层116。如图2C所示，在本实施例中，在基板112的边缘117上的部分第一导体层116的上表面是斜角表面115。还具体而言，在本实施例中，部分第一导体层116具有第一部分116a和第二部分116b。第一部分116a位于基板112的倾斜面IP上，第二部分116b位于基板112的水平上表面SU上。第一导体层116的第一部分116a的上表面是斜角表面115。
请参照图2D，形成第二导体层118在保护层114和第一导体层116上。如图2D所示，在本实施例中，第二导体层118电性连接到第一导体层116。还具体而儿，在本实施例中，部分的第一导体层116可以通过第二导体层118而连接。然而，本发明不限于此。或者，部分的第一导体层116可以不彼此连接，并且在另一实施例中，在空间上被分开。
请参照图2E，导电材料120'和130'可以形成在第一导体层116和第二导体层118上。在本实施例中，可通过印刷罩(未绘示)来印刷或沉积导电材料120'和130'于第一导体层116和第二导体层118上，以将导电材料120'和130'对准至第一导体层116和第二导体层118。
请参照图2E与图2F，可进行回焊步骤以回焊图2E的导电材料120'和130'，进而形成半导体结构100的第一导电凸块120和第二导电凸块130。如此，第一导电凸块120被形成在斜角表面115上，并且，如图2F所示，第一导电凸块120的轮廓延伸超过边缘117的侧表面SE。此外，第一导电凸块120经由互连金属层113而电性连接至集成电路111。并且，如图2F所示，第二导电凸块130也同时形成在半导体基板110的水平上表面SU上，其中第二导电凸块130电性连接到第二导体层118。
还详细而言，如图2F所示，各第二导电凸块130的最大垂直高度H大于第一导电凸块120的最大垂直高度h。举例而言，在本实施例中，各第二导电凸块130的直径D大于第一导电凸块120的直径d，以使得各第二导电凸块130的最大垂直高度H大于第一导电凸块120的最大垂直高度h。然而，本发明不限于此。例如，在各种实施方式中，各第二导电凸块130中的直径D可以等于或大于第一导电凸块120的直径d，而由于第一导电凸块120在斜角表面115上，因此其也能导致各第二导电凸块130的最大垂直高度H大于第一导电凸块120的最大垂直高度h。
如此，半导体结构100被形成。进一步而言，在本实施例中，通过配置第一导电凸块120在斜角表面115上的结构，半导体结构100能够将半导体构件并排连接到另一物体。以下，将参照图3进行进一步说明。
请参照图3，图3为依据本发明的一实施例的半导体元件300的剖面示意图。半导体元件300包括两个上述半导体结构100，并且两个半导体结构100的半导体基板110的斜角表面115彼此面对。通过这样的配置，可以接合两个半导体基板110的斜角表面115上的第一导电凸块120，以便横向地连接两个半导体结构100。如此一来，这两个半导体结构100通过它们各自被接合的第一导电凸块120而横向连接，并且因此不需要配置额外的重分布层来将半导体构件横向连接到另一物体。因此，半导体元件300能够通过第一导电凸块120而横向连接，而能节省成本。
请参照图4，图4为依据本发明的另一实施例的半导体元件400的剖面示意图。半导体元件400与半导体元件300类似，但是半导体元件400还包括印刷电路板440。还具体而言，印刷电路板440具有焊垫441。焊垫441电性连接到第二导电凸块130，且焊垫441与第二导电凸块130接触。由于第二导电凸块130的最大垂直高度H大于第一导电凸块120的最大垂直高度h，焊垫441并不接触第一导电凸块120。
如此一来，此两个半导体结构100通过它们各自被接合的第一导电凸块120而横向连接，因此在印刷电路板440中不需要配置额外的重分布层以将半导体构件横向连接到另一物体。也就是说，在本实施例中，半导体元件400也能够通过第一导电凸块120而横向连接，而能节省成本。
图5A与图5B为依据本发明的一实施例的半导体元件的形成方法的各种制造步骤的流程图。请参照图5A，在形成半导体元件的方法中，执行步骤510，用以在至少一个半导体基板的边缘上形成斜角表面，其中各半导体基板具有集成电路以及互连金属层。还具体而言，请参照图5B，在边缘上形成斜角表面的步骤510包括如下的步骤511、512、513、514、515以及516。
如图5B所示，在本实施例中，在步骤510中，执行步骤511以提供基板。然后，执行步骤512，以在基板上形成保护层。然后，执行步骤513，以在基板的边缘上形成倾斜面。然后，执行步骤514，以在保护层上形成金属层。此后，执行步骤515，以图案化金属层而在保护层上形成第一导体层，其中部分第一导体层在基板的边缘上的上表面为斜角表面。然后，执行步骤516，以在保护层和第一导体层上形成第二导体层，其中该第二导体层电性连接至该第一导体层。
请再参照图5A，形成半导体元件的方法还包括步骤520，以在斜角表面上形成第一导电凸块，并在半导体基板的水平上表面上形成第二导电凸块。然后，执行步骤530，以接合这两个半导体结构的这些第一导电凸块以横向连接此两个半导体结构。或者，形成半导体元件的方法还可以包括步骤540，其提供具有多个焊垫的印刷电路板，并将焊垫电性连接到第二导电凸块。
综上所述，通过第一导电凸块在斜角表面上的配置，半导体结构能够将半导体构件并排连接至另一物体。举例而言，当半导体元件包括两个上述的半导体结构，且这两个半导体基板的斜角表面朝向彼此时，在这两个半导体基板的斜角表面上的第一导电凸块可以被接合，以便横向连接这两个半导体结构。如此一来，这两个半导体结构通过它们各自被接合的第一导电凸块而横向连接，并且因此不需要配置额外的重分布层来将半导体构件横向连接到另一物体。因此，半导体元件能够通过导电凸块而横向连接，而能节省成本。
虽然本发明已以实施方式公开如上，然其并非用以限定本发明，任何所属领域的一般技术人员，在不脱离本发明的精神和范围内，当可作各种的更动与润饰，因此本发明的保护范围当视权利要求所界定的为准。

Claims (11)

1.一种半导体结构，其特征在于，包含：
半导体基板，具有集成电路以及互连金属层，其中斜角表面形成在所述半导体基板的边缘上；
第一导电凸块，经由所述互连金属层电性连接至所述集成电路，并位于所述斜角表面上，其中所述第一导电凸块的轮廓延伸超出所述半导体基板的所述边缘的侧表面；
多个第二导电凸块，位于所述半导体基板的上表面上，各所述第二导电凸块的直径大于所述第一导电凸块的直径；以及
印刷电路板，具有多个焊垫，所述多个焊垫接触并电性连接至所述多个第二导电凸块，而不接触所述第一导电凸块。
2.如权利要求1所述的半导体结构，其特征在于，半导体基板还包含：
基板；
保护层，位于所述基板上；
第一导体层，位于所述保护层上；以及
第二导体层，位于所述保护层以及所述第一导体层上，其中所述第二导体层电性连接至所述第一导体层。
3.如权利要求2所述的半导体结构，其特征在于，所述基板具有倾斜面，部分所述第一导体层具有第一部分以及第二部分，所述第一部分位于所述基板的所述倾斜面上，所述第二部分位于所述基板的水平上表面上，且所述第一导体层的所述第一部分的上表面为所述斜角表面。
4.如权利要求2所述的半导体结构，其特征在于，所述保护层包含重分布层。
5.一种半导体元件，其特征在于，包含：
两个彼此横向连接的半导体结构，且各所述半导体结构包含：
半导体基板，具有集成电路以及互连金属层，其中斜角表面形成在所述半导体基板的边缘上；
第一导电凸块，经由所述互连金属层电性连接至所述集成电路，并位于所述斜角表面上，其中所述第一导电凸块的轮廓延伸超出所述半导体基板的所述边缘的侧表面；
多个第二导电凸块，位于所述半导体基板的上表面上，各所述第二导电凸块的直径大于所述第一导电凸块的直径；以及
印刷电路板，具有多个焊垫，所述多个焊垫接触并电性连接至所述多个第二导电凸块，而不接触所述第一导电凸块；
其中所述两个半导体结构通过各所述半导体结构的所述第一导电凸块相互接合而达到彼此横向连接。
6.如权利要求5所述的半导体元件，其特征在于，半导体基板还包含：
基板；
保护层，位于所述基板上；
第一导体层，位于所述保护层上；以及
第二导体层，位于所述保护层以及所述第一导体层上，其中所述第二导体层电性连接至所述第一导体层。
7.如权利要求6所述的半导体元件，其特征在于，所述基板具有倾斜面，部分所述第一导体层具有第一部分以及第二部分，所述第一部分位于所述基板的所述倾斜面上，所述第二部分位于所述基板的水平上表面上，且所述第一导体层的所述第一部分的上表面为所述斜角表面。
8.如权利要求6所述的半导体元件，其特征在于，所述保护层包含重分布层。
9.一种半导体元件的形成方法，其特征在于，包含：
在至少一个半导体基板的边缘上形成斜角表面，其中各所述半导体基板具有集成电路以及互连金属层；以及
在所述斜角表面上形成第一导电凸块，其中所述第一导电凸块经由所述互连金属层电性连接至所述集成电路，并位于所述斜角表面上，其中所述第一导电凸块的轮廓延伸超出所述边缘的侧表面；
在所述半导体基板的上表面上形成多个第二导电凸块，各所述第二导电凸块的直径大于所述第一导电凸块的直径；以及
提供印刷电路板，其具有多个焊垫，所述多个焊垫接触并电性连接至所述多个第二导电凸块，而不接触所述第一导电凸块。
10.如权利要求9所述的半导体元件的形成方法，其特征在于，所述半导体元件包含两个半导体结构，且各所述半导体结构包含所述半导体基板，且还包含：
接合所述两个半导体结构的所述多个第一导电凸块以达到彼此的横向连接。
11.如权利要求9所述的半导体元件的形成方法，其特征在于，在所述至少一个半导体基板的所述边缘上形成所述斜角表面包含：
提供基板；
在所述基板上形成保护层；
在所述基板的边缘上形成倾斜面；
在所述保护层上形成金属层；
图案化所述金属层以在所述保护层上形成第一导体层，其中所述第一导体层的一部分在所述基板的边缘上的上表面为所述斜角表面；以及
在所述保护层以及所述第一导体层上形成第二导体层，其中所述第二导体层电性连接至所述第一导体层。
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