TWI628773B - 半導體結構、半導體元件及其形成方法 - Google Patents

半導體結構、半導體元件及其形成方法 Download PDF

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TWI628773B
TWI628773B TW106123361A TW106123361A TWI628773B TW I628773 B TWI628773 B TW I628773B TW 106123361 A TW106123361 A TW 106123361A TW 106123361 A TW106123361 A TW 106123361A TW I628773 B TWI628773 B TW I628773B
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semiconductor
substrate
conductor layer
layer
conductive bumps
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TW106123361A
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TW201901904A (zh
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林柏均
朱金龍
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南亞科技股份有限公司
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Abstract

本揭露提供一種半導體結構、半導體元件及其形成方法。半導體元件包含二彼此橫向連接的半導體結構，且各半導體結構包含一半導體基板以及一第一導電凸塊。半導體基板具有一積體電路以及一互連金屬層，其中一斜角表面形成在半導體基板的一邊緣上。第一導電凸塊經由互連金屬層電性連接至積體電路，並位於斜角表面上，其中第一導電凸塊的一輪廓延伸超出半導體基板的邊緣的一側表面。此二半導體結構藉由其相接合的第一導電凸塊橫向連接。

Description

半導體結構、半導體元件及其形成方法
本揭露是關於一種半導體元件、半導體結構及其形成方法。
隨著半導體封裝技術的快速發展，半導體產品越來越緊密地積集化，並且隨著微型化而提供更好的性能。因此，開發了用於形成諸如引線接合，覆晶技術和晶圓級封裝的半導體封裝的各種方法以滿足各種要求。然而，半導體封裝的習知結構和製造方法顯然具有不便和缺陷，並且需要進一步的改進。舉例而言，在晶圓級封裝的方法中，以具有凸塊的晶片接合只能將半導體元件與垂直堆疊的物體連接起來，而需要重分佈層以將半導體元件橫向連接到物體上，從而增加半導體封裝的製造成本。
為了解決上述問題，本領域技術人員相關領域莫不費盡心思開發，但仍然缺乏克服這些問題的合適解決方案。因此，如何有效地應對上述問題，實屬當前重要研發課題之一，亦成為當前相關領域亟需改進的目標。
本揭露涉及一種半導體結構，其能夠將半導體構件並排連接至另一物體。
本揭露涉及一種半導體元件，其能夠建立與導電凸塊的橫向連接，以節省成本。
本揭露涉及一種半導體元件的形成方法，其採用在半導體結構的邊緣上形成導電凸塊的步驟，以建立橫向連接，並節省成本。
本揭露提供一種半導體結構。半導體結構包含一半導體基板以及一第一導電凸塊。半導體基板具有一積體電路以及一互連金屬層，其中一斜角表面形成在該半導體基板的一邊緣上。第一導電凸塊經由該互連金屬層電性連接至該積體電路，並位於該斜角表面上，其中該第一導電凸塊的一輪廓延伸超出該半導體基板的該邊緣的一側表面。
本揭露提供一種半導體元件。半導體元件包含二彼此橫向連接的半導體結構，且各該半導體結構包含一半導體基板以及一第一導電凸塊。半導體基板具有一積體電路以及一互連金屬層，其中一斜角表面形成在該半導體基板的一邊緣上。第一導電凸塊經由該互連金屬層電性連接至該積體電路，並位於該斜角表面上，其中該第一導電凸塊的一輪廓延伸超出該半導體基板的該邊緣的一側表面。該二半導體結構藉由該二半導體結構的相接合的該些第一導電凸塊橫向連接。
本揭露提供一種半導體元件的形成方法。方法包 含下列步驟。形成一斜角表面在至少一半導體基板的一邊緣上，其中各該半導體基板具有一積體電路以及一互連金屬層。形成一第一導電凸塊在該斜角表面上，其中該第一導電凸塊經由該互連金屬層電性連接至該積體電路，並位於該斜角表面上，其中該第一導電凸塊的一輪廓延伸超出該邊緣的一側表面。
在本揭露的一或多個實施例中，上述的半導體基板包含一基板、一保護層、一第一導體層以及一第二導體層。保護層位於該基板上。第一導體層位於該保護層上。第二導體層位於該保護層以及該第一導體層上，其中該第二導體層電性連接至該第一導體層。
在本揭露的一或多個實施例中，上述的基板具有一傾斜面，部分該第一導體層具有一第一部分以及一第二部分，該第一部分位於該基板的該傾斜面上，該第二部分位於該基板的一水平上表面上，且該第一導體層的該第一部分的上表面為該斜角表面。
在本揭露的一或多個實施例中，上述的保護層包含一重分佈層。
在本揭露的一或多個實施例中，上述的半導體結構，更包含多個第二導電凸塊，其位於該半導體基板的上表面上，且電性連接至該第二導體層。
在本揭露的一或多個實施例中，上述的各該第二導電凸塊的最大垂直高度大於該第一導電凸塊的最大垂直高度。
在本揭露的一或多個實施例中，上述的半導體結構更包含一印刷電路板，其具有多個焊墊，該些焊墊接觸並電性連接至該些第二導電凸塊，而不接觸該第一導電凸塊。
在本揭露的一或多個實施例中，上述的導體元件的形成方法更包含下列步驟。該至少一半導體基板包含二半導體基板，以及接合該二半導體結構的該些第一導電凸塊以橫向連接該二半導體結構。
在本揭露的一或多個實施例中，形成上述的該斜角表面在該至少一半導體基板的該邊緣上的方法包含下列步驟。提供一基板。形成一保護層在該基板上。形成一傾斜面在該基板的邊緣上。形成一金屬層在於該保護層上。圖案化該金屬層以形成一第一導體層在於該保護層上，其中該第一導體層的一部分在該基板的邊緣上的上表面為該斜角表面。形成一第二導體層在該保護層以及該第一導體層上，其中該第二導體層電性連接至該第一導體層。
在本揭露的一或多個實施例中，上述的半導體元件的形成方法更包含下列步驟。形成多個第二導電凸塊在該半導體基板的一水平上表面上，其中該些第二導電凸塊電性連接至該第二導體層。
在本揭露的一或多個實施例中，上述的半導體元件的形成方法更包含下列步驟。提供一印刷電路板，其具有多個焊墊。該些焊墊被電性連接至該些第二導電凸塊，其中該些焊墊接觸該些第二導電凸塊，並而不接觸該第一導電凸塊。
基於上述，藉由第一導電凸塊在斜角表面上的配 置，半導體結構能夠將半導體構件並排連接至另一物體。舉例而言，當半導體元件包括兩個上述的半導體結構，且這兩個半導體基板的斜角表面朝向彼此時，在這兩個半導體基板的斜角表面上的第一導電凸塊可以被接合，以便橫向連接這兩個半導體結構。如此一來，這兩個半導體結構藉由它們各自被接合的第一導電凸塊而橫向連接，並且因此不需要配置額外的重分佈層來將半導體構件橫向連接到另一物體。因此，半導體元件能夠藉由導電凸塊而橫向連接，而能節省成本。
以下將以實施方式對上述之說明作詳細的描述，並對本發明之技術方案提供更進一步的解釋。
100‧‧‧半導體結構
110‧‧‧半導體基板
112‧‧‧基板
111‧‧‧積體電路
114‧‧‧保護層
113‧‧‧互連金屬層
115‧‧‧斜角表面
116'‧‧‧金屬層
116‧‧‧第一導體層
116a‧‧‧第一部分
116b‧‧‧第二部分
117‧‧‧邊緣
118‧‧‧第二導體層
120‧‧‧第一導電凸塊
130‧‧‧第二導電凸塊
120'、130'‧‧‧導電材料
300、400‧‧‧半導體元件
440‧‧‧印刷電路板
441‧‧‧焊墊
510、511、512、513、514、515、516、520、530、540‧‧‧步驟
d、D‧‧‧直徑
h、H‧‧‧高度
IP‧‧‧傾斜面
SE‧‧‧側表面
SU‧‧‧上表面
RDL‧‧‧重分佈層
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下：第1圖為依據本揭露的一實施例的半導體結構的剖面示意圖；第2A圖至第2F圖為依據本揭露的一實施例的半導體結構的形成方法的各種製造步驟的剖面示意圖；第3圖為依據本揭露的一實施例的半導體元件的剖面示意圖；第4圖為依據本揭露的另一實施例的半導體元件的剖面示意圖；第5A圖與第5B圖為依據本揭露的一實施例的半導體元件的形成方法的各種製造步驟的流程圖。
為了使本發明之敘述更加詳盡與完備，可參照所附之圖式及以下所述各種實施例，圖式中相同之號碼代表相同或相似之元件。另一方面，眾所週知的元件與步驟並未描述於實施例中，以避免對本發明造成不必要的限制。
請參照第1圖，第1圖為依據本揭露的一實施例的半導體結構100的剖面示意圖。半導體結構100包括半導體基板110、一第一導電凸塊120和多個第二導電凸塊130。在本實施例中，第一導電凸塊120和第二導電凸塊130由焊料形成，錫鉛或其它合適的材料，但是本揭露不限於此。舉例而言，在不同的實施例中，第一導電凸塊120和第二導電凸塊130可包含焊料凸塊或焊料漿料，其可被安裝或印刷到半導體基板110的水平上表面SU上。
如第1圖所示，半導體基板110具有一積體電路111以及一互連金屬層113，並且還包括一基板112、保護層114、第一導體層116以及第二導體層118。保護層114位在基板112上。第一導體層116位在保護層114上。第二導體層118位在保護層114和第一導體層116上，其中第二導體層118電性連接到第一導體層116。
此外，如第1圖所示，一斜角表面115形成在半導體基板110的一邊緣117上。第一導電凸塊120經由互連金屬層113電性連接到積體電路111，並且位在斜角表面115上，其中第一導電凸塊120的輪廓延伸超過邊緣117的一側 表面SE。第二導電凸塊130位在半導體基板110的上表面SU上，並且電性連接到第二導體層118。
以下將參照第2A圖至第2F圖進一步說明形成半導體結構100的過程。
第2A圖至第2F圖為依據本揭露的一實施例的半導體結構100的形成方法的各種製造步驟的剖面示意圖。請參照第2A圖，提供一基板112，且在基板112上形成保護層114。在本實施例中，半導體基板110具有積體電路111和互連金屬層113。舉例而言，如第2A圖所示，保護層114還包括一重分佈層RDL，其可以連接到半導體基板110內部的積體電路111。
請參照第2B圖，形成一金屬層116'在保護層114上，且形成一傾斜面IP在基板112的一邊緣117上。舉例而言，在本實施例中，形成傾斜面IP的方法包括以使用具有一傾斜角的雷射來對基板112鑽孔。接著，切割基板112以使部分傾斜面IP保留在邊緣117上。如此一來，就形成了在基板112的邊緣117上的傾斜面IP。
請參照第2C圖，圖案化金屬層116'以在保護層114上形成第一導體層116。如第2C圖所示，在本實施例中，在基板112之邊緣117上的部分第一導體層116的上表面是斜角表面115。更具體而言，在本實施例中，部分第一導體層116具有第一部分116a和第二部分116b。第一部分116a位在基板112的傾斜面IP上，第二部分116b位在基板112的水平上表面SU上。第一導體層116的第一部分116a的上表面是斜角表面 115。
請參照第2D圖，形成第二導體層118在保護層114和第一導體層116上。如第2D圖所示，在本實施例中，第二導體層118電性連接到第一導體層116。更具體而兒，在本實施例中，部分的第一導體層116可以藉由第二導體層118而連接。然而，本揭露不限於此。或者，部分的第一導體層116可以不彼此連接，並且在另一實施例中，在空間上被分開。
請參照第2E圖，導電材料120'和130'可以形成在第一導體層116和第二導體層118上。在本實施例中，可藉由一印刷罩(未繪示)來印刷或沉積導電材料120'和130'於第一導體層116和第二導體層118上，以將導電材料120'和130'對準至第一導體層116和第二導體層118。
請參照第2E圖與第2F圖，可進行回焊步驟以回焊第2E圖的導電材料120'和130'，進而形成半導體結構100的第一導電凸塊120和第二導電凸塊130。如此，第一導電凸塊120被形成在斜角表面115上，並且，如第2F圖所示，第一導電凸塊120的輪廓延伸超過邊緣117的側表面SE。此外，第一導電凸塊120經由互連金屬層113而電性連接至積體電路111。並且，如圖2F所示，第二導電凸塊130也同時形成在半導體基板110的水平上表面SU上，其中第二導電凸塊130電性連接到第二導體層118。
更詳細而言，如第2F圖所示，各第二導電凸塊130的最大垂直高度H大於第一導電凸塊120的最大垂直高度h。舉例而言，在本實施例中，各第二導電凸塊130的直徑D大於第 一導電凸塊120的直徑d，以使得各第二導電凸塊130的最大垂直高度H大於第一導電凸塊120的最大垂直高度h。然而，本揭露不限於此。例如，在各種實施方式中，各第二導電凸塊130中的直徑D可以等於或大於第一導電凸塊120的直徑d，而由於第一導電凸塊120在斜角表面115上，因此其也能導致各第二導電凸塊130的最大垂直高度H大於第一導電凸塊120的最大垂直高度h。
如此，半導體結構100被形成。進一步而言，在本實施例中，藉由配置第一導電凸塊120在斜角表面115上的結構，半導體結構100能夠將半導體構件並排連接到另一物體。以下，將參照第3圖進行進一步說明。
請參照第3圖，第3圖為依據本揭露的一實施例的半導體元件300的剖面示意圖。半導體元件300包括兩個上述半導體結構100，並且兩個半導體結構100的半導體基板110的斜角表面115彼此面對。藉由這樣的配置，可以接合兩個半導體基板110的斜角表面115上的第一導電凸塊120，以便橫向地連接兩個半導體結構100。如此一來，這兩個半導體結構100藉由它們各自被接合的第一導電凸塊120而橫向連接，並且因此不需要配置額外的重分佈層來將半導體構件橫向連接到另一物體。因此，半導體元件300能夠藉由第一導電凸塊120而橫向連接，而能節省成本。
請參照第4圖，第4圖為依據本揭露的另一實施例的半導體元件400的剖面示意圖。半導體元件400與半導體元件300類似，但是半導體元件400還包括印刷電路板440。更 具體而言，印刷電路板440具有焊墊441。焊墊441電性連接到第二導電凸塊130，且焊墊441與第二導電凸塊130接觸。由於第二導電凸塊130的最大垂直高度H大於第一導電凸塊120的最大垂直高度h，焊墊441並不接觸第一導電凸塊120。
如此一來，此二半導體結構100藉由它們各自被接合的第一導電凸塊120而橫向連接，因此在印刷電路板440中不需要配置額外的重分佈層以將半導體構件橫向連接到另一物體。也就是說，在本實施例中，半導體元件400亦能夠藉由第一導電凸塊120而橫向連接，而能節省成本。
第5A圖與第5B圖為依據本揭露的一實施例的半導體元件的形成方法的各種製造步驟的流程圖。請參照第5A圖，在形成半導體元件的方法中，執行步驟510，用以形成一斜角表面在至少一半導體基板的一邊緣上，其中各半導體基板具有一積體電路以及一互連金屬層。更具體而言，請參照第5B圖，在邊緣上形成斜角表面的步驟510包括如下的步驟511、512、513、514、515以及516。
如第5B圖所示，在本實施例中，在步驟510中，執行步驟511以提供一基板。然後，執行步驟512，以在基板上形成一保護層。然後，執行步驟513，以在基板的邊緣上形成一傾斜面。然後，執行步驟514，以在保護層上形成一金屬層。此後，執行步驟515，以圖案化金屬層而在保護層上形成第一導體層，其中部分第一導體層在基板的邊緣上的上表面為斜角表面。然後，執行步驟516，以在保護層和第一導體層上形成第二導體層，其中該第二導體層電性連接 至該第一導體層。
請再參照第5A圖，形成半導體元件的方法還包括步驟520，以形成一第一導電凸塊在斜角表面上，並在半導體基板的水平上表面上形成第二導電凸塊。然後，執行步驟530，以接合此二半導體結構的這些第一導電凸塊以橫向連接此二半導體結構。或者，形成半導體元件的方法還可以包括步驟540，其提供具有多個焊墊的印刷電路板，並將焊墊電性連接到第二導電凸塊。
綜上所述，藉由第一導電凸塊在斜角表面上的配置，半導體結構能夠將半導體構件並排連接至另一物體。舉例而言，當半導體元件包括兩個上述的半導體結構，且這兩個半導體基板的斜角表面朝向彼此時，在這兩個半導體基板的斜角表面上的第一導電凸塊可以被接合，以便橫向連接這兩個半導體結構。如此一來，這兩個半導體結構藉由它們各自被接合的第一導電凸塊而橫向連接，並且因此不需要配置額外的重分佈層來將半導體構件橫向連接到另一物體。因此，半導體元件能夠藉由導電凸塊而橫向連接，而能節省成本。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，於不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。

Claims (20)

  1. 一種半導體結構，包含：一半導體基板，具有一積體電路以及一互連金屬層，其中一斜角表面形成在該半導體基板的一邊緣上；以及一第一導電凸塊，經由該互連金屬層電性連接至該積體電路，並位於該斜角表面上，其中該第一導電凸塊的一輪廓延伸超出該半導體基板的該邊緣的一側表面。
  2. 如請求項1所述之半導體結構，其中半導體基板更包含：一基板；一保護層，位於該基板上；一第一導體層，位於該保護層上；以及一第二導體層，位於該保護層以及該第一導體層上，其中該第二導體層電性連接至該第一導體層。
  3. 如請求項2所述之半導體結構，其中該基板具有一傾斜面，部分該第一導體層具有一第一部分以及一第二部分，該第一部分位於該基板的該傾斜面上，該第二部分位於該基板的一水平上表面上，且該第一導體層的該第一部分的上表面為該斜角表面。
  4. 如請求項2所述之半導體結構，其中該保護層包含一重分佈層。
  5. 如請求項2所述之半導體結構，更包含：多個第二導電凸塊，位於該半導體基板的上表面上，且電性連接至該第二導體層。
  6. 如請求項5所述之半導體結構，其中各該第二導電凸塊的最大垂直高度大於該第一導電凸塊的最大垂直高度。
  7. 如請求項5所述之半導體結構，更包含：一印刷電路板，具有多個焊墊，該些焊墊接觸並電性連接至該些第二導電凸塊，而不接觸該第一導電凸塊。
  8. 一種半導體元件，包含：二彼此橫向連接的半導體結構，且各該半導體結構包含：一半導體基板，具有一積體電路以及一互連金屬層，其中一斜角表面形成在該半導體基板的一邊緣上；以及一第一導電凸塊，經由該互連金屬層電性連接至該積體電路，並位於該斜角表面上，其中該第一導電凸塊的一輪廓延伸超出該半導體基板的該邊緣的一側表面；其中該二半導體結構藉由各該二半導體結構的該第一導電凸塊相互接合而達成彼此橫向連接。
  9. 如請求項8所述之半導體元件，其中半導體基板更包含：一基板；一保護層，位於該基板上；一第一導體層，位於該保護層上；以及一第二導體層，位於該保護層以及該第一導體層上，其中該第二導體層電性連接至該第一導體層。
  10. 如請求項9所述之半導體元件，其中該基板具有一傾斜面，部分該第一導體層具有一第一部分以及一第二部分，該第一部分位於該基板的該傾斜面上，該第二部分位於該基板的一水平上表面上，且該第一導體層的該第一部分的上表面為該斜角表面。
  11. 如請求項9所述之半導體元件，其中該保護層包含一重分佈層。
  12. 如請求項9所述之半導體元件，更包含：多個第二導電凸塊，位於各該半導體基板的上表面上，且電性連接至該第二導體層。
  13. 如請求項12所述之半導體元件，其中各該第二導電凸塊的最大垂直高度大於該第一導電凸塊的最大垂直高度。
  14. 如請求項12所述之半導體元件，更包含：一印刷電路板，具有多個焊墊，該些焊墊接觸並電性連接至該些第二導電凸塊，而不接觸該第一導電凸塊。
  15. 一種半導體元件的形成方法，包含：形成一斜角表面在至少一半導體基板的一邊緣上，其中各該半導體基板具有一積體電路以及一互連金屬層；以及形成一第一導電凸塊在該斜角表面上，其中該第一導電凸塊經由該互連金屬層電性連接至該積體電路，並位於該斜角表面上，其中該第一導電凸塊的一輪廓延伸超出該邊緣的一側表面。
  16. 如請求項15所述之半導體元件的形成方法，其中該至少一半導體基板包含二半導體基板，且更包含：接合該二半導體結構的該些第一導電凸塊以達成彼此的橫向連接。
  17. 如請求項15所述之半導體元件的形成方法，其中形成該斜角表面在該至少一半導體基板的該邊緣上包含：提供一基板；形成一保護層在該基板上；形成一傾斜面在該基板的邊緣上；形成一金屬層在於該保護層上；圖案化該金屬層以形成一第一導體層在於該保護層上，其中該第一導體層的一部分在該基板的邊緣上的上表面為該斜角表面；以及形成一第二導體層在該保護層以及該第一導體層上，其中該第二導體層電性連接至該第一導體層。
  18. 如請求項17所述之半導體元件的形成方法，更包含：形成多個第二導電凸塊在該半導體基板的一水平上表面上，其中該些第二導電凸塊電性連接至該第二導體層。
  19. 如請求項18所述之半導體元件的形成方法，其中各該第二導電凸塊的最大垂直高度大於該第二導電凸塊的最大垂直高度。
  20. 如請求項18所述之半導體元件的形成方法，更包含：提供一印刷電路板，其具有多個焊墊；以及使該些焊墊電性連接至該些第二導電凸塊，其中該些焊墊接觸該些第二導電凸塊，並而不接觸該第一導電凸塊。
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