TWI474486B - 薄膜電晶體 - Google Patents

薄膜電晶體 Download PDF

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Publication number
TWI474486B
TWI474486B TW98107350A TW98107350A TWI474486B TW I474486 B TWI474486 B TW I474486B TW 98107350 A TW98107350 A TW 98107350A TW 98107350 A TW98107350 A TW 98107350A TW I474486 B TWI474486 B TW I474486B
Authority
TW
Taiwan
Prior art keywords
layer
insulating layer
semiconductor layer
microcrystalline semiconductor
pair
Prior art date
Application number
TW98107350A
Other languages
English (en)
Chinese (zh)
Other versions
TW201001713A (en
Inventor
神保安弘
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201001713A publication Critical patent/TW201001713A/zh
Application granted granted Critical
Publication of TWI474486B publication Critical patent/TWI474486B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Thin Film Transistor (AREA)
TW98107350A 2008-03-18 2009-03-06 薄膜電晶體 TWI474486B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008070451 2008-03-18

Publications (2)

Publication Number Publication Date
TW201001713A TW201001713A (en) 2010-01-01
TWI474486B true TWI474486B (zh) 2015-02-21

Family

ID=41087977

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98107350A TWI474486B (zh) 2008-03-18 2009-03-06 薄膜電晶體

Country Status (4)

Country Link
US (2) US7821012B2 (enExample)
JP (1) JP5395471B2 (enExample)
CN (1) CN101540341B (enExample)
TW (1) TWI474486B (enExample)

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US7812348B2 (en) * 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
US7821012B2 (en) * 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5411528B2 (ja) * 2008-03-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタ及び表示装置
US8049215B2 (en) * 2008-04-25 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
US8039842B2 (en) * 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor
WO2009157573A1 (en) * 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, semiconductor device and electronic device
JP5509802B2 (ja) 2009-11-13 2014-06-04 ソニー株式会社 無線通信システム、無線通信装置、無線通信方法、およびプログラム
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
JP5445207B2 (ja) * 2010-02-17 2014-03-19 三菱電機株式会社 薄膜トランジスタ及びその製造方法
US20120282742A1 (en) * 2010-03-15 2012-11-08 Canon Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JP2011216864A (ja) * 2010-03-15 2011-10-27 Canon Inc 半導体装置とその製造方法
TWI545652B (zh) * 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI605590B (zh) * 2011-09-29 2017-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
CN103107202B (zh) 2013-01-23 2016-04-27 深圳市华星光电技术有限公司 一种薄膜晶体管结构、液晶显示装置和一种制造方法
CN103199112B (zh) * 2013-03-20 2017-02-15 北京京东方光电科技有限公司 一种阵列基板及其制备方法和显示面板
WO2015102909A1 (en) * 2013-12-30 2015-07-09 Robert Bosch Gmbh Airflow and illumination system for a table saw
EP4181214A4 (en) * 2020-07-07 2024-01-03 Toppan Inc. Thin film transistor, thin film transistor array, and thin film transistor production method
KR102885323B1 (ko) * 2022-11-14 2025-11-11 엘지디스플레이 주식회사 표시 패널 및 표시장치

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US5595944A (en) * 1993-03-12 1997-01-21 Semiconductor Energy Laboratory Co., Inc. Transistor and process for fabricating the same
US5893730A (en) * 1996-02-23 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
US6515336B1 (en) * 1999-09-17 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having tapered gate electrode and taped insulating film

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JPH05129608A (ja) 1991-10-31 1993-05-25 Sharp Corp 半導体装置
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JPH07131030A (ja) 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
JPH08201851A (ja) 1995-01-31 1996-08-09 Sharp Corp アクティブマトリクス基板
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JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
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JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP5159021B2 (ja) 2003-12-02 2013-03-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101188356B1 (ko) 2003-12-02 2012-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사장치, 레이저 조사방법 및 반도체장치의제조방법
KR101050351B1 (ko) 2004-09-24 2011-07-19 엘지디스플레이 주식회사 박막트랜지스터 및 그 제조방법
JP5487421B2 (ja) * 2006-01-09 2014-05-07 テクニオン リサーチ アンド ディベロップメント ファウンデーション リミティド トランジスタの構造及びその製造方法
JP2008091599A (ja) 2006-10-02 2008-04-17 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
JP2008140984A (ja) * 2006-12-01 2008-06-19 Sharp Corp 半導体素子、半導体素子の製造方法、及び表示装置
US7786485B2 (en) 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7812348B2 (en) 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7821012B2 (en) 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8049215B2 (en) 2008-04-25 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8039842B2 (en) 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor

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Publication number Priority date Publication date Assignee Title
US5595944A (en) * 1993-03-12 1997-01-21 Semiconductor Energy Laboratory Co., Inc. Transistor and process for fabricating the same
US5893730A (en) * 1996-02-23 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
US6515336B1 (en) * 1999-09-17 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having tapered gate electrode and taped insulating film

Also Published As

Publication number Publication date
JP5395471B2 (ja) 2014-01-22
CN101540341A (zh) 2009-09-23
US8207538B2 (en) 2012-06-26
US20090236601A1 (en) 2009-09-24
CN101540341B (zh) 2013-03-13
TW201001713A (en) 2010-01-01
US20110017992A1 (en) 2011-01-27
US7821012B2 (en) 2010-10-26
JP2009260294A (ja) 2009-11-05

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