TWI469215B - Plasma processing method - Google Patents
Plasma processing method Download PDFInfo
- Publication number
- TWI469215B TWI469215B TW100125308A TW100125308A TWI469215B TW I469215 B TWI469215 B TW I469215B TW 100125308 A TW100125308 A TW 100125308A TW 100125308 A TW100125308 A TW 100125308A TW I469215 B TWI469215 B TW I469215B
- Authority
- TW
- Taiwan
- Prior art keywords
- period
- plasma
- gas
- processing chamber
- etching
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims description 21
- 239000007789 gas Substances 0.000 claims description 91
- 238000012545 processing Methods 0.000 claims description 85
- 239000007795 chemical reaction product Substances 0.000 claims description 42
- 238000001020 plasma etching Methods 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 76
- 235000012431 wafers Nutrition 0.000 description 67
- 238000005530 etching Methods 0.000 description 57
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 26
- 230000008021 deposition Effects 0.000 description 21
- 238000009832 plasma treatment Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000006053 organic reaction Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011145164A JP5802454B2 (ja) | 2011-06-30 | 2011-06-30 | プラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201301381A TW201301381A (zh) | 2013-01-01 |
| TWI469215B true TWI469215B (zh) | 2015-01-11 |
Family
ID=47389521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100125308A TWI469215B (zh) | 2011-06-30 | 2011-07-18 | Plasma processing method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8801951B2 (enExample) |
| JP (1) | JP5802454B2 (enExample) |
| KR (1) | KR101256492B1 (enExample) |
| CN (1) | CN102856191B (enExample) |
| TW (1) | TWI469215B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014216331A (ja) * | 2013-04-22 | 2014-11-17 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| JP2015050433A (ja) * | 2013-09-04 | 2015-03-16 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP6396699B2 (ja) * | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6295130B2 (ja) * | 2014-04-22 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| JP6424024B2 (ja) | 2014-06-24 | 2018-11-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| JP6567943B2 (ja) | 2015-01-09 | 2019-08-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US9779919B2 (en) | 2015-01-09 | 2017-10-03 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
| US11417501B2 (en) | 2015-09-29 | 2022-08-16 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| JP6670692B2 (ja) | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US9767991B2 (en) * | 2015-11-04 | 2017-09-19 | Lam Research Corporation | Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication |
| JP7228413B2 (ja) * | 2019-03-11 | 2023-02-24 | 東京エレクトロン株式会社 | プラズマ処理方法、及び、プラズマ処理装置 |
| KR102207608B1 (ko) | 2019-04-24 | 2021-01-26 | 윤종오 | 카르복실산으로 유기화된 규소 이온 복합체 및 복합체의 제조방법과 이를 이용한 제품 |
| KR20220044475A (ko) * | 2019-06-04 | 2022-04-08 | 멤브리온 인코포레이티드 | 세라믹 양이온 교환 물질 |
| CN110993499B (zh) * | 2019-11-05 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 一种刻蚀方法、空气隙型介电层及动态随机存取存储器 |
| CN115699264A (zh) * | 2020-10-05 | 2023-02-03 | Spp科技股份有限公司 | 等离子体处理用气体、等离子体处理方法及等离子体处理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759339B1 (en) * | 2002-12-13 | 2004-07-06 | Silicon Magnetic Systems | Method for plasma etching a microelectronic topography using a pulse bias power |
| CN101421830A (zh) * | 2006-02-17 | 2009-04-29 | 朗姆研究公司 | 无限选择性的光刻胶掩膜蚀刻 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115232A (ja) | 1983-11-28 | 1985-06-21 | Hitachi Ltd | ドライエッチング用ガス |
| JPH06342769A (ja) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | エッチング方法及び装置 |
| JP3210469B2 (ja) | 1993-03-12 | 2001-09-17 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| US7695763B2 (en) | 2004-01-28 | 2010-04-13 | Tokyo Electron Limited | Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate |
| KR100773734B1 (ko) * | 2006-12-29 | 2007-11-09 | 제일모직주식회사 | 난연성이 우수한 열가소성 폴리에스테르 수지 조성물 |
| US7547636B2 (en) * | 2007-02-05 | 2009-06-16 | Lam Research Corporation | Pulsed ultra-high aspect ratio dielectric etch |
-
2011
- 2011-06-30 JP JP2011145164A patent/JP5802454B2/ja active Active
- 2011-07-18 TW TW100125308A patent/TWI469215B/zh active
- 2011-07-29 KR KR1020110075832A patent/KR101256492B1/ko active Active
- 2011-08-16 US US13/210,490 patent/US8801951B2/en active Active
- 2011-08-19 CN CN201110239141.5A patent/CN102856191B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759339B1 (en) * | 2002-12-13 | 2004-07-06 | Silicon Magnetic Systems | Method for plasma etching a microelectronic topography using a pulse bias power |
| CN101421830A (zh) * | 2006-02-17 | 2009-04-29 | 朗姆研究公司 | 无限选择性的光刻胶掩膜蚀刻 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102856191B (zh) | 2015-04-08 |
| TW201301381A (zh) | 2013-01-01 |
| KR101256492B1 (ko) | 2013-04-19 |
| US20130001197A1 (en) | 2013-01-03 |
| JP2013012624A (ja) | 2013-01-17 |
| KR20130007384A (ko) | 2013-01-18 |
| CN102856191A (zh) | 2013-01-02 |
| JP5802454B2 (ja) | 2015-10-28 |
| US8801951B2 (en) | 2014-08-12 |
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