KR101256492B1 - 플라즈마 처리방법 - Google Patents

플라즈마 처리방법 Download PDF

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KR101256492B1
KR101256492B1 KR1020110075832A KR20110075832A KR101256492B1 KR 101256492 B1 KR101256492 B1 KR 101256492B1 KR 1020110075832 A KR1020110075832 A KR 1020110075832A KR 20110075832 A KR20110075832 A KR 20110075832A KR 101256492 B1 KR101256492 B1 KR 101256492B1
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plasma
period
etching
gas
high frequency
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KR20130007384A (ko
Inventor
요시하루 이노우에
미치카즈 모리모토
츠요시 마츠모토
데츠오 오노
다다미츠 가네키요
마모루 야쿠시지
마사카즈 미야지
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
KR1020110075832A 2011-06-30 2011-07-29 플라즈마 처리방법 Active KR101256492B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-145164 2011-06-30
JP2011145164A JP5802454B2 (ja) 2011-06-30 2011-06-30 プラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20130007384A KR20130007384A (ko) 2013-01-18
KR101256492B1 true KR101256492B1 (ko) 2013-04-19

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US (1) US8801951B2 (enExample)
JP (1) JP5802454B2 (enExample)
KR (1) KR101256492B1 (enExample)
CN (1) CN102856191B (enExample)
TW (1) TWI469215B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170054281A (ko) * 2015-11-04 2017-05-17 램 리써치 코포레이션 펄싱된 플라즈마 반도체 디바이스 제조시 라디칼 밀도, 이온 밀도 및 이온 에너지의 독립적인 제어를 위한 방법들 및 시스템들

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216331A (ja) * 2013-04-22 2014-11-17 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP2015050433A (ja) * 2013-09-04 2015-03-16 東京エレクトロン株式会社 プラズマ処理方法
JP6396699B2 (ja) * 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
JP6295130B2 (ja) * 2014-04-22 2018-03-14 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP6424024B2 (ja) 2014-06-24 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US9779919B2 (en) 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP6567943B2 (ja) 2015-01-09 2019-08-28 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP7228413B2 (ja) * 2019-03-11 2023-02-24 東京エレクトロン株式会社 プラズマ処理方法、及び、プラズマ処理装置
KR102207608B1 (ko) 2019-04-24 2021-01-26 윤종오 카르복실산으로 유기화된 규소 이온 복합체 및 복합체의 제조방법과 이를 이용한 제품
EP3980167A4 (en) * 2019-06-04 2023-06-14 Membrion, Inc. CERAMIC CATION EXCHANGE MATERIALS
CN110993499B (zh) 2019-11-05 2022-08-16 北京北方华创微电子装备有限公司 一种刻蚀方法、空气隙型介电层及动态随机存取存储器
WO2022074708A1 (ja) * 2020-10-05 2022-04-14 Ｓｐｐテクノロジーズ株式会社 プラズマ処理用ガス、プラズマ処理方法及びプラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060127104A (ko) * 2004-01-28 2006-12-11 동경 엘렉트론 주식회사 기판 처리 장치의 처리실 청정화 방법, 기판 처리 장치 및기판 처리 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115232A (ja) 1983-11-28 1985-06-21 Hitachi Ltd ドライエッチング用ガス
JPH06342769A (ja) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd エッチング方法及び装置
JP3210469B2 (ja) 1993-03-12 2001-09-17 株式会社日立製作所 半導体集積回路装置の製造方法
US6759339B1 (en) * 2002-12-13 2004-07-06 Silicon Magnetic Systems Method for plasma etching a microelectronic topography using a pulse bias power
US7910489B2 (en) * 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
KR100773734B1 (ko) * 2006-12-29 2007-11-09 제일모직주식회사 난연성이 우수한 열가소성 폴리에스테르 수지 조성물
US7547636B2 (en) * 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060127104A (ko) * 2004-01-28 2006-12-11 동경 엘렉트론 주식회사 기판 처리 장치의 처리실 청정화 방법, 기판 처리 장치 및기판 처리 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170054281A (ko) * 2015-11-04 2017-05-17 램 리써치 코포레이션 펄싱된 플라즈마 반도체 디바이스 제조시 라디칼 밀도, 이온 밀도 및 이온 에너지의 독립적인 제어를 위한 방법들 및 시스템들
KR102798091B1 (ko) 2015-11-04 2025-04-17 램 리써치 코포레이션 펄싱된 플라즈마 반도체 디바이스 제조시 라디칼 밀도, 이온 밀도 및 이온 에너지의 독립적인 제어를 위한 방법들 및 시스템들

Also Published As

Publication number Publication date
KR20130007384A (ko) 2013-01-18
TWI469215B (zh) 2015-01-11
CN102856191B (zh) 2015-04-08
JP5802454B2 (ja) 2015-10-28
US8801951B2 (en) 2014-08-12
JP2013012624A (ja) 2013-01-17
CN102856191A (zh) 2013-01-02
TW201301381A (zh) 2013-01-01
US20130001197A1 (en) 2013-01-03

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