CN102856191B - 等离子处理方法 - Google Patents

等离子处理方法 Download PDF

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Publication number
CN102856191B
CN102856191B CN201110239141.5A CN201110239141A CN102856191B CN 102856191 B CN102856191 B CN 102856191B CN 201110239141 A CN201110239141 A CN 201110239141A CN 102856191 B CN102856191 B CN 102856191B
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China
Prior art keywords
period
plasma
gas
processing chamber
etching
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CN201110239141.5A
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English (en)
Chinese (zh)
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CN102856191A (zh
Inventor
井上喜晴
森本未知数
松本刚
小野哲郎
金清任光
药师寺守
宫地正和
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
CN201110239141.5A 2011-06-30 2011-08-19 等离子处理方法 Active CN102856191B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-145164 2011-06-30
JP2011145164A JP5802454B2 (ja) 2011-06-30 2011-06-30 プラズマ処理方法

Publications (2)

Publication Number Publication Date
CN102856191A CN102856191A (zh) 2013-01-02
CN102856191B true CN102856191B (zh) 2015-04-08

Family

ID=47389521

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110239141.5A Active CN102856191B (zh) 2011-06-30 2011-08-19 等离子处理方法

Country Status (5)

Country Link
US (1) US8801951B2 (enExample)
JP (1) JP5802454B2 (enExample)
KR (1) KR101256492B1 (enExample)
CN (1) CN102856191B (enExample)
TW (1) TWI469215B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216331A (ja) * 2013-04-22 2014-11-17 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP2015050433A (ja) * 2013-09-04 2015-03-16 東京エレクトロン株式会社 プラズマ処理方法
JP6396699B2 (ja) * 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
JP6295130B2 (ja) * 2014-04-22 2018-03-14 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP6424024B2 (ja) 2014-06-24 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US9779919B2 (en) 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP6567943B2 (ja) 2015-01-09 2019-08-28 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US9767991B2 (en) * 2015-11-04 2017-09-19 Lam Research Corporation Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication
JP7228413B2 (ja) * 2019-03-11 2023-02-24 東京エレクトロン株式会社 プラズマ処理方法、及び、プラズマ処理装置
KR102207608B1 (ko) 2019-04-24 2021-01-26 윤종오 카르복실산으로 유기화된 규소 이온 복합체 및 복합체의 제조방법과 이를 이용한 제품
EP3980167A4 (en) * 2019-06-04 2023-06-14 Membrion, Inc. CERAMIC CATION EXCHANGE MATERIALS
CN110993499B (zh) 2019-11-05 2022-08-16 北京北方华创微电子装备有限公司 一种刻蚀方法、空气隙型介电层及动态随机存取存储器
WO2022074708A1 (ja) * 2020-10-05 2022-04-14 Ｓｐｐテクノロジーズ株式会社 プラズマ処理用ガス、プラズマ処理方法及びプラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115232A (ja) 1983-11-28 1985-06-21 Hitachi Ltd ドライエッチング用ガス
JPH06342769A (ja) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd エッチング方法及び装置
JP3210469B2 (ja) 1993-03-12 2001-09-17 株式会社日立製作所 半導体集積回路装置の製造方法
US6759339B1 (en) * 2002-12-13 2004-07-06 Silicon Magnetic Systems Method for plasma etching a microelectronic topography using a pulse bias power
CN100477107C (zh) * 2004-01-28 2009-04-08 东京毅力科创株式会社 基板处理装置的处理室净化方法、基板处理装置和基板处理方法
US7910489B2 (en) * 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
KR100773734B1 (ko) * 2006-12-29 2007-11-09 제일모직주식회사 난연성이 우수한 열가소성 폴리에스테르 수지 조성물
US7547636B2 (en) * 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch

Also Published As

Publication number Publication date
KR101256492B1 (ko) 2013-04-19
KR20130007384A (ko) 2013-01-18
TWI469215B (zh) 2015-01-11
JP5802454B2 (ja) 2015-10-28
US8801951B2 (en) 2014-08-12
JP2013012624A (ja) 2013-01-17
CN102856191A (zh) 2013-01-02
TW201301381A (zh) 2013-01-01
US20130001197A1 (en) 2013-01-03

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