JP5802454B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP5802454B2
JP5802454B2 JP2011145164A JP2011145164A JP5802454B2 JP 5802454 B2 JP5802454 B2 JP 5802454B2 JP 2011145164 A JP2011145164 A JP 2011145164A JP 2011145164 A JP2011145164 A JP 2011145164A JP 5802454 B2 JP5802454 B2 JP 5802454B2
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JP
Japan
Prior art keywords
gas
period
plasma
processing method
processing chamber
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JP2011145164A
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English (en)
Japanese (ja)
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JP2013012624A5 (enExample
JP2013012624A (ja
Inventor
井上　喜晴
喜晴 井上
未知数 森本
未知数 森本
松本　剛
剛 松本
小野　哲郎
哲郎 小野
金清　任光
任光 金清
薬師寺　守
守 薬師寺
宮地　正和
正和 宮地
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2011145164A priority Critical patent/JP5802454B2/ja
Priority to TW100125308A priority patent/TWI469215B/zh
Priority to KR1020110075832A priority patent/KR101256492B1/ko
Priority to US13/210,490 priority patent/US8801951B2/en
Priority to CN201110239141.5A priority patent/CN102856191B/zh
Publication of JP2013012624A publication Critical patent/JP2013012624A/ja
Publication of JP2013012624A5 publication Critical patent/JP2013012624A5/ja
Application granted granted Critical
Publication of JP5802454B2 publication Critical patent/JP5802454B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP2011145164A 2011-06-30 2011-06-30 プラズマ処理方法 Active JP5802454B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011145164A JP5802454B2 (ja) 2011-06-30 2011-06-30 プラズマ処理方法
TW100125308A TWI469215B (zh) 2011-06-30 2011-07-18 Plasma processing method
KR1020110075832A KR101256492B1 (ko) 2011-06-30 2011-07-29 플라즈마 처리방법
US13/210,490 US8801951B2 (en) 2011-06-30 2011-08-16 Plasma processing method
CN201110239141.5A CN102856191B (zh) 2011-06-30 2011-08-19 等离子处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011145164A JP5802454B2 (ja) 2011-06-30 2011-06-30 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2013012624A JP2013012624A (ja) 2013-01-17
JP2013012624A5 JP2013012624A5 (enExample) 2014-06-05
JP5802454B2 true JP5802454B2 (ja) 2015-10-28

Family

ID=47389521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011145164A Active JP5802454B2 (ja) 2011-06-30 2011-06-30 プラズマ処理方法

Country Status (5)

Country Link
US (1) US8801951B2 (enExample)
JP (1) JP5802454B2 (enExample)
KR (1) KR101256492B1 (enExample)
CN (1) CN102856191B (enExample)
TW (1) TWI469215B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216331A (ja) * 2013-04-22 2014-11-17 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP2015050433A (ja) * 2013-09-04 2015-03-16 東京エレクトロン株式会社 プラズマ処理方法
JP6396699B2 (ja) * 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
JP6295130B2 (ja) * 2014-04-22 2018-03-14 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP6424024B2 (ja) 2014-06-24 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6567943B2 (ja) 2015-01-09 2019-08-28 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9779919B2 (en) 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US9767991B2 (en) * 2015-11-04 2017-09-19 Lam Research Corporation Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication
JP7228413B2 (ja) * 2019-03-11 2023-02-24 東京エレクトロン株式会社 プラズマ処理方法、及び、プラズマ処理装置
KR102207608B1 (ko) 2019-04-24 2021-01-26 윤종오 카르복실산으로 유기화된 규소 이온 복합체 및 복합체의 제조방법과 이를 이용한 제품
JP7738486B2 (ja) * 2019-06-04 2025-09-12 メンブリオン・インコーポレイテッド セラミック陽イオン交換材料
CN110993499B (zh) 2019-11-05 2022-08-16 北京北方华创微电子装备有限公司 一种刻蚀方法、空气隙型介电层及动态随机存取存储器
WO2022074708A1 (ja) * 2020-10-05 2022-04-14 Ｓｐｐテクノロジーズ株式会社 プラズマ処理用ガス、プラズマ処理方法及びプラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115232A (ja) 1983-11-28 1985-06-21 Hitachi Ltd ドライエッチング用ガス
JPH06342769A (ja) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd エッチング方法及び装置
JP3210469B2 (ja) 1993-03-12 2001-09-17 株式会社日立製作所 半導体集積回路装置の製造方法
US6759339B1 (en) * 2002-12-13 2004-07-06 Silicon Magnetic Systems Method for plasma etching a microelectronic topography using a pulse bias power
US7695763B2 (en) 2004-01-28 2010-04-13 Tokyo Electron Limited Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate
US7910489B2 (en) * 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
KR100773734B1 (ko) * 2006-12-29 2007-11-09 제일모직주식회사 난연성이 우수한 열가소성 폴리에스테르 수지 조성물
US7547636B2 (en) * 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch

Also Published As

Publication number Publication date
CN102856191B (zh) 2015-04-08
TWI469215B (zh) 2015-01-11
JP2013012624A (ja) 2013-01-17
US8801951B2 (en) 2014-08-12
US20130001197A1 (en) 2013-01-03
TW201301381A (zh) 2013-01-01
KR101256492B1 (ko) 2013-04-19
KR20130007384A (ko) 2013-01-18
CN102856191A (zh) 2013-01-02

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