JP2013012624A5 - - Google Patents
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- Publication number
- JP2013012624A5 JP2013012624A5 JP2011145164A JP2011145164A JP2013012624A5 JP 2013012624 A5 JP2013012624 A5 JP 2013012624A5 JP 2011145164 A JP2011145164 A JP 2011145164A JP 2011145164 A JP2011145164 A JP 2011145164A JP 2013012624 A5 JP2013012624 A5 JP 2013012624A5
- Authority
- JP
- Japan
- Prior art keywords
- processing method
- plasma
- gas
- period
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 28
- 238000003672 processing method Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 10
- 239000007795 chemical reaction product Substances 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011145164A JP5802454B2 (ja) | 2011-06-30 | 2011-06-30 | プラズマ処理方法 |
| TW100125308A TWI469215B (zh) | 2011-06-30 | 2011-07-18 | Plasma processing method |
| KR1020110075832A KR101256492B1 (ko) | 2011-06-30 | 2011-07-29 | 플라즈마 처리방법 |
| US13/210,490 US8801951B2 (en) | 2011-06-30 | 2011-08-16 | Plasma processing method |
| CN201110239141.5A CN102856191B (zh) | 2011-06-30 | 2011-08-19 | 等离子处理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011145164A JP5802454B2 (ja) | 2011-06-30 | 2011-06-30 | プラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013012624A JP2013012624A (ja) | 2013-01-17 |
| JP2013012624A5 true JP2013012624A5 (enExample) | 2014-06-05 |
| JP5802454B2 JP5802454B2 (ja) | 2015-10-28 |
Family
ID=47389521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011145164A Active JP5802454B2 (ja) | 2011-06-30 | 2011-06-30 | プラズマ処理方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8801951B2 (enExample) |
| JP (1) | JP5802454B2 (enExample) |
| KR (1) | KR101256492B1 (enExample) |
| CN (1) | CN102856191B (enExample) |
| TW (1) | TWI469215B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014216331A (ja) * | 2013-04-22 | 2014-11-17 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| JP2015050433A (ja) * | 2013-09-04 | 2015-03-16 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP6396699B2 (ja) * | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6295130B2 (ja) * | 2014-04-22 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| JP6424024B2 (ja) | 2014-06-24 | 2018-11-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| US9779919B2 (en) | 2015-01-09 | 2017-10-03 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
| JP6567943B2 (ja) | 2015-01-09 | 2019-08-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6670692B2 (ja) | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US11417501B2 (en) | 2015-09-29 | 2022-08-16 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| US9767991B2 (en) * | 2015-11-04 | 2017-09-19 | Lam Research Corporation | Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication |
| JP7228413B2 (ja) * | 2019-03-11 | 2023-02-24 | 東京エレクトロン株式会社 | プラズマ処理方法、及び、プラズマ処理装置 |
| KR102207608B1 (ko) | 2019-04-24 | 2021-01-26 | 윤종오 | 카르복실산으로 유기화된 규소 이온 복합체 및 복합체의 제조방법과 이를 이용한 제품 |
| AU2020289331B2 (en) * | 2019-06-04 | 2025-12-04 | Membrion, Inc. | Ceramic cation exchange materials |
| CN110993499B (zh) | 2019-11-05 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 一种刻蚀方法、空气隙型介电层及动态随机存取存储器 |
| JP6977199B1 (ja) * | 2020-10-05 | 2021-12-08 | Ｓｐｐテクノロジーズ株式会社 | プラズマ処理用ガス、プラズマ処理方法及びプラズマ処理装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115232A (ja) | 1983-11-28 | 1985-06-21 | Hitachi Ltd | ドライエッチング用ガス |
| JPH06342769A (ja) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | エッチング方法及び装置 |
| JP3210469B2 (ja) | 1993-03-12 | 2001-09-17 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| US6759339B1 (en) * | 2002-12-13 | 2004-07-06 | Silicon Magnetic Systems | Method for plasma etching a microelectronic topography using a pulse bias power |
| US7695763B2 (en) | 2004-01-28 | 2010-04-13 | Tokyo Electron Limited | Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate |
| US7910489B2 (en) * | 2006-02-17 | 2011-03-22 | Lam Research Corporation | Infinitely selective photoresist mask etch |
| KR100773734B1 (ko) * | 2006-12-29 | 2007-11-09 | 제일모직주식회사 | 난연성이 우수한 열가소성 폴리에스테르 수지 조성물 |
| US7547636B2 (en) * | 2007-02-05 | 2009-06-16 | Lam Research Corporation | Pulsed ultra-high aspect ratio dielectric etch |
-
2011
- 2011-06-30 JP JP2011145164A patent/JP5802454B2/ja active Active
- 2011-07-18 TW TW100125308A patent/TWI469215B/zh active
- 2011-07-29 KR KR1020110075832A patent/KR101256492B1/ko active Active
- 2011-08-16 US US13/210,490 patent/US8801951B2/en active Active
- 2011-08-19 CN CN201110239141.5A patent/CN102856191B/zh active Active
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