JP2015503224A5 - - Google Patents
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- JP2015503224A5 JP2015503224A5 JP2014540631A JP2014540631A JP2015503224A5 JP 2015503224 A5 JP2015503224 A5 JP 2015503224A5 JP 2014540631 A JP2014540631 A JP 2014540631A JP 2014540631 A JP2014540631 A JP 2014540631A JP 2015503224 A5 JP2015503224 A5 JP 2015503224A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pulsing
- inert
- source
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161560005P | 2011-11-15 | 2011-11-15 | |
| US61/560,005 | 2011-11-15 | ||
| US13/550,547 US8808561B2 (en) | 2011-11-15 | 2012-07-16 | Inert-dominant pulsing in plasma processing systems |
| US13/550,547 | 2012-07-16 | ||
| PCT/IB2012/056348 WO2013072834A1 (en) | 2011-11-15 | 2012-11-12 | Inert-dominant pulsing in plasma processing |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018076476A Division JP6676094B2 (ja) | 2011-11-15 | 2018-04-12 | プラズマ処理システムにおける不活性物優勢パルス化 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015503224A JP2015503224A (ja) | 2015-01-29 |
| JP2015503224A5 true JP2015503224A5 (enExample) | 2015-12-24 |
| JP6325448B2 JP6325448B2 (ja) | 2018-05-16 |
Family
ID=48279609
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014540631A Active JP6325448B2 (ja) | 2011-11-15 | 2012-11-12 | プラズマ処理システムにおける不活性物優勢パルス化 |
| JP2018076476A Active JP6676094B2 (ja) | 2011-11-15 | 2018-04-12 | プラズマ処理システムにおける不活性物優勢パルス化 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018076476A Active JP6676094B2 (ja) | 2011-11-15 | 2018-04-12 | プラズマ処理システムにおける不活性物優勢パルス化 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8808561B2 (enExample) |
| JP (2) | JP6325448B2 (enExample) |
| KR (1) | KR102188927B1 (enExample) |
| CN (3) | CN105513933A (enExample) |
| SG (2) | SG11201401749SA (enExample) |
| TW (2) | TWI575552B (enExample) |
| WO (1) | WO2013072834A1 (enExample) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US8808561B2 (en) * | 2011-11-15 | 2014-08-19 | Lam Research Coporation | Inert-dominant pulsing in plasma processing systems |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US9362163B2 (en) | 2013-07-30 | 2016-06-07 | Lam Research Corporation | Methods and apparatuses for atomic layer cleaning of contacts and vias |
| US9275869B2 (en) * | 2013-08-02 | 2016-03-01 | Lam Research Corporation | Fast-gas switching for etching |
| US9184029B2 (en) | 2013-09-03 | 2015-11-10 | Lam Research Corporation | System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor |
| US9318304B2 (en) | 2013-11-11 | 2016-04-19 | Applied Materials, Inc. | Frequency tuning for dual level radio frequency (RF) pulsing |
| US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
| US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| JP6316735B2 (ja) * | 2014-12-04 | 2018-04-25 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
| SG10201604524PA (en) | 2015-06-05 | 2017-01-27 | Lam Res Corp | ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS |
| US9761459B2 (en) | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| US9788405B2 (en) | 2015-10-03 | 2017-10-10 | Applied Materials, Inc. | RF power delivery with approximated saw tooth wave pulsing |
| US9741539B2 (en) | 2015-10-05 | 2017-08-22 | Applied Materials, Inc. | RF power delivery regulation for processing substrates |
| US9754767B2 (en) | 2015-10-13 | 2017-09-05 | Applied Materials, Inc. | RF pulse reflection reduction for processing substrates |
| US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US9872373B1 (en) | 2016-10-25 | 2018-01-16 | Applied Materials, Inc. | Smart multi-level RF pulsing methods |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US9997371B1 (en) | 2017-04-24 | 2018-06-12 | Lam Research Corporation | Atomic layer etch methods and hardware for patterning applications |
| US10494715B2 (en) | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US10854453B2 (en) * | 2017-06-12 | 2020-12-01 | Tokyo Electron Limited | Method for reducing reactive ion etch lag in low K dielectric etching |
| US10763083B2 (en) * | 2017-10-06 | 2020-09-01 | Lam Research Corporation | High energy atomic layer etching |
| WO2019190781A1 (en) | 2018-03-30 | 2019-10-03 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| US10784089B2 (en) * | 2019-02-01 | 2020-09-22 | Applied Materials, Inc. | Temperature and bias control of edge ring |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| KR20210149893A (ko) | 2019-04-30 | 2021-12-09 | 램 리써치 코포레이션 | 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스 |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| CN112331554B (zh) * | 2019-08-05 | 2022-03-04 | 长鑫存储技术有限公司 | 薄膜沉积方法、半导体器件的制作方法及半导体器件 |
| CN112349860B (zh) * | 2019-10-15 | 2023-03-14 | 广东聚华印刷显示技术有限公司 | 发光器件及其有机缓冲封装层与制作方法 |
| US12479004B2 (en) | 2019-10-18 | 2025-11-25 | Lam Research Corporation | Selective attachment to enhance SiO2:SiNx etch selectivity |
| WO2021146138A1 (en) | 2020-01-15 | 2021-07-22 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| KR20220164031A (ko) | 2020-04-03 | 2022-12-12 | 램 리써치 코포레이션 | Euv 리소그래피 성능을 향상시키기 위한 사전 노출 포토레지스트 경화 |
| US11651970B2 (en) | 2020-05-19 | 2023-05-16 | Tokyo Electron Limited | Systems and methods for selective ion mass segregation in pulsed plasma atomic layer etching |
| WO2022010809A1 (en) | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| KR102797476B1 (ko) | 2020-11-13 | 2025-04-21 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| TW202247248A (zh) | 2021-02-03 | 2022-12-01 | 美商蘭姆研究公司 | 原子層蝕刻中的蝕刻選擇性控制 |
| US20250191909A1 (en) * | 2023-12-08 | 2025-06-12 | Applied Materials, Inc. | Uniform gapfill deposition on semiconductor substrates with varying geometries |
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| GB8516537D0 (en) * | 1985-06-29 | 1985-07-31 | Standard Telephones Cables Ltd | Pulsed plasma apparatus |
| US5164040A (en) * | 1989-08-21 | 1992-11-17 | Martin Marietta Energy Systems, Inc. | Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets |
| JPH04137532A (ja) * | 1990-04-23 | 1992-05-12 | Toshiba Corp | 表面処理方法及びその装置 |
| US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| JP3084497B2 (ja) * | 1992-03-25 | 2000-09-04 | 東京エレクトロン株式会社 | ＳｉＯ２膜のエッチング方法 |
| US5252178A (en) | 1992-06-24 | 1993-10-12 | Texas Instruments Incorporated | Multi-zone plasma processing method and apparatus |
| JPH0621008A (ja) * | 1992-07-02 | 1994-01-28 | Seiko Epson Corp | 半導体装置の製造装置及び製造方法及び終点判定装置及び終点判定方法 |
| JPH07226397A (ja) * | 1994-02-10 | 1995-08-22 | Tokyo Electron Ltd | エッチング処理方法 |
| JP3224469B2 (ja) * | 1994-02-28 | 2001-10-29 | 三菱電機株式会社 | 薄膜形成法及びその装置 |
| US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
| JP2000299461A (ja) * | 1999-04-15 | 2000-10-24 | Denso Corp | 半導体装置の製造方法 |
| KR100750420B1 (ko) * | 1999-08-17 | 2007-08-21 | 동경 엘렉트론 주식회사 | 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터 |
| US7199328B2 (en) * | 2001-08-29 | 2007-04-03 | Tokyo Electron Limited | Apparatus and method for plasma processing |
| JP4066332B2 (ja) * | 2002-10-10 | 2008-03-26 | 日本エー・エス・エム株式会社 | シリコンカーバイド膜の製造方法 |
| US6991959B2 (en) * | 2002-10-10 | 2006-01-31 | Asm Japan K.K. | Method of manufacturing silicon carbide film |
| US6916746B1 (en) * | 2003-04-09 | 2005-07-12 | Lam Research Corporation | Method for plasma etching using periodic modulation of gas chemistry |
| US7081414B2 (en) * | 2003-05-23 | 2006-07-25 | Applied Materials, Inc. | Deposition-selective etch-deposition process for dielectric film gapfill |
| WO2008020267A2 (en) * | 2006-08-16 | 2008-02-21 | Freescale Semiconductor, Inc. | Etch method in the manufacture of an integrated circuit |
| US8235001B2 (en) * | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| JP5219562B2 (ja) * | 2007-04-02 | 2013-06-26 | 株式会社日立国際電気 | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
| JP5226296B2 (ja) * | 2007-12-27 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
| US8299391B2 (en) * | 2008-07-30 | 2012-10-30 | Applied Materials, Inc. | Field enhanced inductively coupled plasma (Fe-ICP) reactor |
| US20100258169A1 (en) * | 2009-04-13 | 2010-10-14 | Applied Materials , Inc. | Pulsed plasma deposition for forming microcrystalline silicon layer for solar applications |
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| KR101430093B1 (ko) * | 2010-03-04 | 2014-09-22 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 에칭 방법, 반도체 디바이스의 제조 방법 및 플라즈마 에칭 장치 |
| US20120021136A1 (en) * | 2010-07-20 | 2012-01-26 | Varian Semiconductor Equipment Associates, Inc. | System and method for controlling plasma deposition uniformity |
| US9318341B2 (en) | 2010-12-20 | 2016-04-19 | Applied Materials, Inc. | Methods for etching a substrate |
| US8735291B2 (en) * | 2011-08-25 | 2014-05-27 | Tokyo Electron Limited | Method for etching high-k dielectric using pulsed bias power |
| US8808561B2 (en) * | 2011-11-15 | 2014-08-19 | Lam Research Coporation | Inert-dominant pulsing in plasma processing systems |
-
2012
- 2012-07-16 US US13/550,547 patent/US8808561B2/en active Active
- 2012-11-12 SG SG11201401749SA patent/SG11201401749SA/en unknown
- 2012-11-12 SG SG10201608391VA patent/SG10201608391VA/en unknown
- 2012-11-12 KR KR1020147016358A patent/KR102188927B1/ko active Active
- 2012-11-12 CN CN201510894145.5A patent/CN105513933A/zh active Pending
- 2012-11-12 JP JP2014540631A patent/JP6325448B2/ja active Active
- 2012-11-12 CN CN201280056139.7A patent/CN103987876B/zh active Active
- 2012-11-12 CN CN201510894141.7A patent/CN105489464B/zh active Active
- 2012-11-12 WO PCT/IB2012/056348 patent/WO2013072834A1/en not_active Ceased
- 2012-11-14 TW TW101142476A patent/TWI575552B/zh active
- 2012-11-14 TW TW105141042A patent/TWI623017B/zh active
-
2014
- 2014-07-09 US US14/327,270 patent/US9214320B2/en active Active
-
2015
- 2015-12-10 US US14/965,720 patent/US9583316B2/en active Active
-
2018
- 2018-04-12 JP JP2018076476A patent/JP6676094B2/ja active Active
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