SG10201608391VA - Inert-dominant pulsing in plasma processing - Google Patents

Inert-dominant pulsing in plasma processing

Info

Publication number
SG10201608391VA
SG10201608391VA SG10201608391VA SG10201608391VA SG10201608391VA SG 10201608391V A SG10201608391V A SG 10201608391VA SG 10201608391V A SG10201608391V A SG 10201608391VA SG 10201608391V A SG10201608391V A SG 10201608391VA SG 10201608391V A SG10201608391V A SG 10201608391VA
Authority
SG
Singapore
Prior art keywords
inert
plasma processing
pulsing
dominant
dominant pulsing
Prior art date
Application number
SG10201608391VA
Inventor
Kanarik Keren Jacobs
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201608391VA publication Critical patent/SG10201608391VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/24—Radiofrequency or microwave generators

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201608391VA 2011-11-15 2012-11-12 Inert-dominant pulsing in plasma processing SG10201608391VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161560005P 2011-11-15 2011-11-15
US13/550,547 US8808561B2 (en) 2011-11-15 2012-07-16 Inert-dominant pulsing in plasma processing systems

Publications (1)

Publication Number Publication Date
SG10201608391VA true SG10201608391VA (en) 2016-11-29

Family

ID=48279609

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201401749SA SG11201401749SA (en) 2011-11-15 2012-11-12 Inert-dominant pulsing in plasma processing
SG10201608391VA SG10201608391VA (en) 2011-11-15 2012-11-12 Inert-dominant pulsing in plasma processing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201401749SA SG11201401749SA (en) 2011-11-15 2012-11-12 Inert-dominant pulsing in plasma processing

Country Status (7)

Country Link
US (3) US8808561B2 (en)
JP (2) JP6325448B2 (en)
KR (1) KR102188927B1 (en)
CN (3) CN105513933A (en)
SG (2) SG11201401749SA (en)
TW (2) TWI575552B (en)
WO (1) WO2013072834A1 (en)

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US9318304B2 (en) 2013-11-11 2016-04-19 Applied Materials, Inc. Frequency tuning for dual level radio frequency (RF) pulsing
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
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US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
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US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
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Also Published As

Publication number Publication date
TW201709258A (en) 2017-03-01
JP6325448B2 (en) 2018-05-16
US20130119019A1 (en) 2013-05-16
CN105489464B (en) 2018-02-02
CN103987876A (en) 2014-08-13
JP2018142711A (en) 2018-09-13
US9583316B2 (en) 2017-02-28
US8808561B2 (en) 2014-08-19
TW201331978A (en) 2013-08-01
US20140319098A1 (en) 2014-10-30
KR102188927B1 (en) 2020-12-10
TWI623017B (en) 2018-05-01
TWI575552B (en) 2017-03-21
CN105513933A (en) 2016-04-20
KR20140096370A (en) 2014-08-05
SG11201401749SA (en) 2014-09-26
CN105489464A (en) 2016-04-13
JP6676094B2 (en) 2020-04-08
JP2015503224A (en) 2015-01-29
US20160099133A1 (en) 2016-04-07
US9214320B2 (en) 2015-12-15
CN103987876B (en) 2016-01-06
WO2013072834A1 (en) 2013-05-23

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