JP6325448B2 - プラズマ処理システムにおける不活性物優勢パルス化 - Google Patents

プラズマ処理システムにおける不活性物優勢パルス化 Download PDF

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JP6325448B2
JP6325448B2 JP2014540631A JP2014540631A JP6325448B2 JP 6325448 B2 JP6325448 B2 JP 6325448B2 JP 2014540631 A JP2014540631 A JP 2014540631A JP 2014540631 A JP2014540631 A JP 2014540631A JP 6325448 B2 JP6325448 B2 JP 6325448B2
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gas
plasma processing
inert
pulsing
source
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JP2015503224A5 (enExample
JP2015503224A (ja
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カナリク・ケレン ジェイコブス
カナリク・ケレン ジェイコブス
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/24—Radiofrequency or microwave generators

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014540631A 2011-11-15 2012-11-12 プラズマ処理システムにおける不活性物優勢パルス化 Active JP6325448B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161560005P 2011-11-15 2011-11-15
US61/560,005 2011-11-15
US13/550,547 US8808561B2 (en) 2011-11-15 2012-07-16 Inert-dominant pulsing in plasma processing systems
US13/550,547 2012-07-16
PCT/IB2012/056348 WO2013072834A1 (en) 2011-11-15 2012-11-12 Inert-dominant pulsing in plasma processing

Related Child Applications (1)

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JP2018076476A Division JP6676094B2 (ja) 2011-11-15 2018-04-12 プラズマ処理システムにおける不活性物優勢パルス化

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JP2015503224A JP2015503224A (ja) 2015-01-29
JP2015503224A5 JP2015503224A5 (enExample) 2015-12-24
JP6325448B2 true JP6325448B2 (ja) 2018-05-16

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US (3) US8808561B2 (enExample)
JP (2) JP6325448B2 (enExample)
KR (1) KR102188927B1 (enExample)
CN (3) CN105513933A (enExample)
SG (2) SG11201401749SA (enExample)
TW (2) TWI575552B (enExample)
WO (1) WO2013072834A1 (enExample)

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Publication number Publication date
US9214320B2 (en) 2015-12-15
JP6676094B2 (ja) 2020-04-08
WO2013072834A1 (en) 2013-05-23
US20140319098A1 (en) 2014-10-30
US20130119019A1 (en) 2013-05-16
TWI575552B (zh) 2017-03-21
TW201331978A (zh) 2013-08-01
SG10201608391VA (en) 2016-11-29
CN105489464A (zh) 2016-04-13
CN105513933A (zh) 2016-04-20
KR102188927B1 (ko) 2020-12-10
US20160099133A1 (en) 2016-04-07
US8808561B2 (en) 2014-08-19
JP2018142711A (ja) 2018-09-13
CN103987876A (zh) 2014-08-13
CN103987876B (zh) 2016-01-06
KR20140096370A (ko) 2014-08-05
JP2015503224A (ja) 2015-01-29
TW201709258A (zh) 2017-03-01
CN105489464B (zh) 2018-02-02
US9583316B2 (en) 2017-02-28
SG11201401749SA (en) 2014-09-26
TWI623017B (zh) 2018-05-01

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