TWI469198B - Substrate cleaning apparatus, substrate cleaning method, manufacturing apparatus of display device, and manufacturing method of display device - Google Patents
Substrate cleaning apparatus, substrate cleaning method, manufacturing apparatus of display device, and manufacturing method of display device Download PDFInfo
- Publication number
- TWI469198B TWI469198B TW101104712A TW101104712A TWI469198B TW I469198 B TWI469198 B TW I469198B TW 101104712 A TW101104712 A TW 101104712A TW 101104712 A TW101104712 A TW 101104712A TW I469198 B TWI469198 B TW I469198B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- cleaning
- liquid
- cleaned
- oxide film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 267
- 238000004140 cleaning Methods 0.000 title claims description 164
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 29
- 239000007788 liquid Substances 0.000 claims description 115
- 239000010408 film Substances 0.000 claims description 86
- 230000032258 transport Effects 0.000 claims description 38
- 229910052732 germanium Inorganic materials 0.000 claims description 31
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 31
- 230000001590 oxidative effect Effects 0.000 claims description 20
- 238000005406 washing Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 30
- 239000007789 gas Substances 0.000 description 29
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 27
- 239000010410 layer Substances 0.000 description 27
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 13
- 229960002050 hydrofluoric acid Drugs 0.000 description 13
- 239000000243 solution Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002101 nanobubble Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QNTVPKHKFIYODU-UHFFFAOYSA-N aluminum niobium Chemical compound [Al].[Nb] QNTVPKHKFIYODU-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011040170A JP5690168B2 (ja) | 2011-02-25 | 2011-02-25 | 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201239972A TW201239972A (en) | 2012-10-01 |
| TWI469198B true TWI469198B (zh) | 2015-01-11 |
Family
ID=46693302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101104712A TWI469198B (zh) | 2011-02-25 | 2012-02-14 | Substrate cleaning apparatus, substrate cleaning method, manufacturing apparatus of display device, and manufacturing method of display device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5690168B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101373784B1 (enrdf_load_stackoverflow) |
| CN (1) | CN102651327B (enrdf_load_stackoverflow) |
| TW (1) | TWI469198B (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014065026A (ja) * | 2012-09-10 | 2014-04-17 | Panasonic Corp | 表面処理装置及び表面処理方法 |
| JP6329342B2 (ja) * | 2013-06-07 | 2018-05-23 | 株式会社ダルトン | 洗浄方法及び洗浄装置 |
| JP6268410B2 (ja) * | 2013-09-27 | 2018-01-31 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| KR101607521B1 (ko) | 2014-07-08 | 2016-03-31 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| CN110544647A (zh) * | 2018-11-06 | 2019-12-06 | 北京北方华创微电子装备有限公司 | 金属互连清洗装置及清洗方法 |
| CN109616551B (zh) * | 2018-11-19 | 2021-02-09 | 横店集团东磁股份有限公司 | 一种多晶表面有机物不良电池片返工工艺 |
| CN110473773B (zh) * | 2019-08-22 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 晶圆清洗方法及晶圆清洗设备 |
| KR102404528B1 (ko) | 2019-09-02 | 2022-06-02 | 세메스 주식회사 | 노즐, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
| CN110676153A (zh) * | 2019-09-20 | 2020-01-10 | 常州捷佳创精密机械有限公司 | 太阳能电池、臭氧溶液施加装置及太阳能电池的制备方法 |
| JP2024134798A (ja) * | 2023-03-22 | 2024-10-04 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法及びその装置 |
| JP2024143699A (ja) * | 2023-03-30 | 2024-10-11 | 高周波熱錬株式会社 | キャリアフィルムの洗浄方法及び洗浄装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201145380A (en) * | 2010-04-28 | 2011-12-16 | Toshiba Kk | Semiconductor substrate surface treatment method |
| TW201145379A (en) * | 2010-03-09 | 2011-12-16 | Tokyo Electron Ltd | Substrate processing device, substrate processing method, and storage medium |
| TW201205674A (en) * | 2010-06-08 | 2012-02-01 | Hitachi Int Electric Inc | Method of manufacturing a semiconductor device, method of cleaning a process vessel, and substrate processing apparatus |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226658A (ja) * | 1988-07-15 | 1990-01-29 | Matsushita Electric Works Ltd | 微細気泡発生ノズル |
| JP2820275B2 (ja) * | 1989-07-17 | 1998-11-05 | 富士通株式会社 | 洗浄装置 |
| JP3660391B2 (ja) * | 1994-05-27 | 2005-06-15 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2760418B2 (ja) * | 1994-07-29 | 1998-05-28 | 住友シチックス株式会社 | 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法 |
| JP4208056B2 (ja) * | 1997-06-13 | 2009-01-14 | 忠弘 大見 | 洗浄方法 |
| JP2000040682A (ja) * | 1998-07-23 | 2000-02-08 | Sumitomo Metal Ind Ltd | 半導体基板の洗浄方法及び洗浄装置 |
| JP2000091291A (ja) * | 1998-09-11 | 2000-03-31 | Memc Kk | シリコンウエハの洗浄方法 |
| JP4675448B2 (ja) * | 1999-06-01 | 2011-04-20 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体基板の洗浄方法 |
| JP2001284316A (ja) * | 2000-03-30 | 2001-10-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP3998005B2 (ja) * | 2004-04-30 | 2007-10-24 | セイコーエプソン株式会社 | 液晶表示装置の製造装置 |
| JP2006289240A (ja) * | 2005-04-08 | 2006-10-26 | Shibaura Mechatronics Corp | 基板の処理装置及び処理方法 |
| JP2008098430A (ja) * | 2006-10-12 | 2008-04-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| JP2009000595A (ja) * | 2007-06-19 | 2009-01-08 | Dainippon Screen Mfg Co Ltd | ウエット洗浄装置および基板洗浄システム |
| KR20100119783A (ko) * | 2008-02-07 | 2010-11-10 | 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 | 반도체 웨이퍼의 세정방법 및 세정장치 |
-
2011
- 2011-02-25 JP JP2011040170A patent/JP5690168B2/ja not_active Expired - Fee Related
-
2012
- 2012-02-02 KR KR1020120010603A patent/KR101373784B1/ko not_active Expired - Fee Related
- 2012-02-14 TW TW101104712A patent/TWI469198B/zh not_active IP Right Cessation
- 2012-02-24 CN CN201210044963.2A patent/CN102651327B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201145379A (en) * | 2010-03-09 | 2011-12-16 | Tokyo Electron Ltd | Substrate processing device, substrate processing method, and storage medium |
| TW201145380A (en) * | 2010-04-28 | 2011-12-16 | Toshiba Kk | Semiconductor substrate surface treatment method |
| TW201205674A (en) * | 2010-06-08 | 2012-02-01 | Hitachi Int Electric Inc | Method of manufacturing a semiconductor device, method of cleaning a process vessel, and substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102651327A (zh) | 2012-08-29 |
| JP5690168B2 (ja) | 2015-03-25 |
| KR101373784B1 (ko) | 2014-03-13 |
| KR20120098412A (ko) | 2012-09-05 |
| CN102651327B (zh) | 2014-11-12 |
| JP2012176353A (ja) | 2012-09-13 |
| TW201239972A (en) | 2012-10-01 |
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