US20160133487A1 - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
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- US20160133487A1 US20160133487A1 US14/997,565 US201614997565A US2016133487A1 US 20160133487 A1 US20160133487 A1 US 20160133487A1 US 201614997565 A US201614997565 A US 201614997565A US 2016133487 A1 US2016133487 A1 US 2016133487A1
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- wafer
- chemical solution
- cleaning
- cleaning nozzle
- chucks
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 114
- 239000000126 substance Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims 4
- 239000008151 electrolyte solution Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 18
- 230000003068 static effect Effects 0.000 abstract description 18
- 239000007788 liquid Substances 0.000 abstract description 12
- 230000002159 abnormal effect Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Definitions
- the present invention relates to a manufacturing method of a semiconductor device and, in particular, to technology effective in applying to a cleaning method for removing contaminants attached onto a surface of a semiconductor wafer.
- cleaning processing is essential in which these contaminants are removed using a cleaning liquid (a chemical solution or pure water).
- a cleaning liquid a chemical solution or pure water
- Patent Document 1 Japanese Patent Laid-Open No. 2007-2210266
- wafer cleaning technology that prevents static electricity charged on a wafer from being transmitted through a cleaning liquid at the moment when the cleaning liquid is discharged and then being partially discharged.
- discharge of the cleaning liquid is started from an area other than an element formation region of the wafer (a peripheral portion of the wafer), and subsequently, the nozzle for supplying the cleaning liquid is moved to the element formation region to clean it.
- the cleaning liquid is discharged to the element formation region after discharged to the peripheral portion of the wafer to discharge the static electricity, a semiconductor element formed in the element formation region is not affected by the static electricity.
- Patent Document 2 Japanese Patent Laid-Open No. 2008-159789
- chuck pins that hold a wafer are comprised of conductive resin of a lower resistance (not more than 100 k ⁇ )
- pipes that supply a cleaning liquid to a front surface and a back surface of the wafer are comprised of conductive resin of a lower resistance (not more than 100 ⁇ ) for the purpose of discharging static electricity charged on the wafer and static electricity generated by a flow of the cleaning liquid.
- Patent Document 3 Japanese Patent Laid-Open No. 1997-092635
- a cleaner in which a carrier that holds a wafer is comprised of a conductive material whose volume resistivity is not more than 1 ⁇ 10 15 ⁇ /cm, and in which charging of the carrier is prevented by grounding it to eventually suppress charging of the wafer in contact with the carrier.
- SPM cleaning is cleaning processing in which contaminants (particularly, organic contaminants) on a surface of a wafer are removed by cleaning the wafer at a temperature of approximately 120° C. using a chemical solution made by adding hydrogen peroxide solution to sulfuric acid.
- APM cleaning is cleaning processing using a chemical solution made by adding hydrogen peroxide solution to ammonia, and it is also called SC1 cleaning.
- the inventor has discovered a phenomenon in which abnormal discharge is generated on a wafer and thereby the wafer is irreversibly damaged in a single wafer type SPM cleaning step performed after resist removal. Consequently, when investigating a chemical solution supply system of a single wafer type cleaner, it has turned out that a chemical solution (SPM) stored in a chemical solution tank is subjected to friction with inner walls of pipes to be charged on a way to be sent to a cleaning nozzle through the pipes, and that as a result of it, static electricity is discharged from the chemical solution to the wafer at the moment when the chemical solution discharged from the cleaning nozzle gets contact with a surface of the wafer.
- SPM chemical solution
- a back surface of the wafer is also oxidized to form a silicon oxide film (gate insulating film), and subsequently, a polycrystalline silicon film attaches to a surface of this silicon oxide film.
- capacitance comprised of a substrate (single crystal silicon)—the silicon oxide film—the polycrystalline silicon film is formed on the back surface of the wafer, and when wafer cleaning is performed with a charged chemical solution in such a state, abnormal discharge is easily generated.
- the present invention has been made in view of the above circumstances and provides technology that can suppress damage of a wafer due to charging of a chemical solution used in a single wafer type wafer cleaning step.
- a manufacturing method of a semiconductor device that is one embodiment of the application includes a step of cleaning a semiconductor wafer by supplying a chemical solution onto a top surface of the semiconductor wafer from a cleaning nozzle while holding a periphery of the semiconductor wafer with wafer chucks and rotating the semiconductor wafer and the wafer chucks in a horizontal plane. Additionally, in the method, the chemical solution is brought into contact with the wafer chucks prior to a step of supplying the chemical solution onto the top surface of the semiconductor wafer.
- Static electricity of the chemical solution can be discharged through the wafer chucks by bringing the chemical solution into contact with the wafer chucks prior to the step of supplying the chemical solution onto the top surface of the semiconductor wafer, thus enabling to suppress damage of the semiconductor wafer due to charging of the chemical solution.
- FIG. 1 is a cross-sectional view of a main part of a semiconductor wafer showing a manufacturing method of a CMOS device according to an embodiment 1 of the present invention
- FIG. 2 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent to FIG. 1 ;
- FIG. 3 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent to FIG. 2 ;
- FIG. 4 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent to FIG. 3 ;
- FIG. 5 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent to FIG. 4 ;
- FIG. 6 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent to FIG. 5 ;
- FIG. 7 is a schematic configuration view of a single wafer type cleaner used in the embodiment 1 of the present invention.
- FIG. 8 is a schematic plan view when a cleaning section of the single wafer type cleaner shown in FIG. 7 is viewed from above;
- FIG. 9 is a schematic configuration view of the single wafer type cleaner showing a cleaning method according to the embodiment 1 of the present invention.
- FIG. 10 is a schematic configuration view of the single wafer type cleaner showing the cleaning method subsequent to FIG. 9 ;
- FIG. 11 is a schematic configuration view of the single wafer type cleaner showing the cleaning method subsequent to FIG. 10 ;
- FIG. 12 is a schematic configuration view of the single wafer type cleaner showing a comparative example of a cleaning method
- FIG. 13 is a schematic configuration view of the single wafer type cleaner showing the cleaning method subsequent to FIG. 11 ;
- FIG. 14 is a schematic configuration view of the single wafer type cleaner showing the cleaning method subsequent to FIG. 13 ;
- FIG. 15 is a schematic configuration view of the single wafer type cleaner showing a cleaning method according to an embodiment 2 of the present invention.
- FIG. 16 is a schematic plan view of the single wafer type cleaner showing change of a moving speed of a cleaning nozzle.
- CMOS Complementary Metal Oxide Semiconductor
- a gate insulating film 5 comprised of silicon oxide is formed on respective surfaces of the n-type well 3 and the p-type well 4 .
- the element isolation trench 2 is formed by an STI (Shallow Trench Isolation) method that buries a silicon oxide film inside a trench formed in the principal surface of the wafer 1
- the n-type well 3 and the p-type well 4 are formed by ion-implanting impurities using a photoresist film as a mask.
- the gate insulating film 5 is formed by thermally oxidizing the respective surfaces of the n-type well 3 and the p-type well 4 .
- a non-doped polycrystalline silicon film 6 a is deposited over the principal surface of the wafer 1 using a CVD method. It is to be noted that an amorphous silicon film may be used instead of the polycrystalline silicon film 6 a.
- boron (B) is ion-implanted in the polycrystalline silicon film 6 a in the upper portion of the n-type well 3 using a photoresist film (not shown) as a mask
- phosphorus (P) is ion-implanted in the polycrystalline silicon film 6 a in the upper portion of the p-type well 4
- the wafer 1 is annealed to activate impurities (boron and phosphorus).
- the polycrystalline silicon film 6 a in the upper portion of the n-type well 3 becomes a p-type polycrystalline silicon film 6 p
- the polycrystalline silicon film 6 a in the upper portion of the p-type well 4 becomes an n-type polycrystalline silicon film 6 n.
- the p-type polycrystalline silicon film 6 p and the n-type polycrystalline silicon film 6 n are dry-etched, respectively using a photoresist film 7 as a mask.
- a gate electrode 8 p comprised of the p-type polycrystalline silicon film 6 p is formed in the upper portion of the n-type well 3
- a gate electrode 8 n comprised of the n-type polycrystalline silicon film 6 n is formed in the upper portion of the p-type well 4 .
- a photoresist film 9 is formed in the upper portion of the n-type well 3 , phosphorus (P) is ion-implanted in the p-type well 4 using this photoresist film 9 as a mask, and thereby n-type semiconductor regions 11 are formed in the p-type well 4 of both sides of the gate electrode 8 n.
- a photoresist film 10 is formed in the upper portion of the p-type well 4 , boron (B) is ion-implanted in the n-type well 3 using this photoresist film 10 as a mask, and thereby p-type semiconductor regions 12 are formed in the n-type well 3 of both sides of the gate electrode 8 p.
- SPM cleaning of the wafer 1 is performed by the following method in order to remove contaminants (mainly, residual substances of ashing of the photoresist film) attached onto and remained on a surface of the wafer 1 .
- FIG. 7 is a schematic configuration view of a single wafer type cleaner used in the embodiment 1
- FIG. 8 is a schematic plan view when a cleaning section of the single wafer type cleaner shown in FIG. 7 is viewed from above.
- a single wafer type cleaner 20 is comprised of a cleaning section that cleans the wafer 1 , and a chemical solution supply section that supplies a chemical solution (SPM) to this cleaning section.
- the cleaning section is comprised of a rotating stage 21 that rotates the wafer 1 in a horizontal plane, wafer chucks 22 that horizontally hold the wafer 1 placed in the upper portion of the rotating stage 21 , a cleaning cup 23 that surrounds around the rotating stage 21 , etc.
- the above-described rotating stage 21 , the wafer chucks 22 , and the cleaning cup 23 are comprised of synthetic resin with corrosion resistance to the chemical solution (SPM), for example, vinyl chloride resin, ABS resin, etc.
- a plating film (not shown) comprised of metal, such as Pt (platinum) with corrosion resistance to the chemical solution (SPM), is formed on a surface of the synthetic resin that constitutes the rotating stage 21 , and further, a ground wire 24 for discharge is connected to this plating film.
- each of the three wafer chucks 22 has a protrusion 22 a extending outside the periphery of the wafer 1 .
- the number, a shape, an area, etc. of the wafer chuck 22 are not limited to examples shown in FIGS. 7 and 8 , and a design thereof can be arbitrarily changed, but the wafer chuck 22 has a portion protruding outside the periphery of the wafer 1 (protrusion 22 a ) in any case.
- the chemical solution supply section of the single wafer type cleaner 20 is comprised of a chemical solution tank 31 that stores a chemical solution 30 , pipes 32 , 33 and 34 for sending the chemical solution 30 in the chemical solution tank 31 to the cleaning section, a pump 35 connected in the middle of the pipe 32 for pumping the chemical solution, opening and closing valves 36 and 37 connected in the middle of the pipes 33 and 34 , a movable cleaning nozzle 38 provided at one end of the pipe 33 , etc.
- the chemical solution tank 31 and the pipes 32 , 33 and 34 are comprised of synthetic resin with corrosion resistance to the chemical solution 30 , for example, fluorine resin.
- One end of the above-described pipe 34 is coupled to a pipe 39 provided in the rotating stage 21 of the cleaning section.
- An upper end of the pipe 39 in the rotating stage 21 is located at a top surface of the rotating stage 21 , and the chemical solution 30 sent to the pipe 39 through the pipe 34 is discharged from the top surface of the rotating stage 21 to clean a back surface of the wafer 1 .
- the wafer 1 is placed on the rotating stage 21 with the principal surface thereof directed upward, and the periphery of the wafer 1 is held and fixed by the wafer chucks 22 . At this time, a slight gap is created between the back surface of the wafer 1 and the top surface of the rotating stage 21 . Hence, the wafer 1 is in contact with only the wafer chucks 22 , and it is in a non-contact state with other members of the single wafer type cleaner 20 . In addition, the cleaning nozzle 38 is waiting outside the cleaning cup 23 at this time.
- the rotating stage 21 is rotated at a predetermined speed, for example, at 500 rpm.
- a predetermined speed for example, at 500 rpm.
- the wafer chucks 22 and the wafer 1 held and fixed by the wafer chucks 22 also rotate at the same speed as the rotating stage 21 .
- the opening and closing valve 36 of the pipe 33 is opened, and when a tip of the cleaning nozzle 38 is located outside the wafer chucks 22 , the chemical solution 30 is discharged from the tip of the cleaning nozzle 38 .
- the chemical solution 30 discharged from the tip of the cleaning nozzle 38 has been charged with static electricity since it is subjected to friction with inner walls of the pipes 32 and 33 in the course of flowing therethrough.
- the cleaning nozzle 38 is made to move further inside the cleaning cup 23 while discharging the chemical solution 30 from the tip of the cleaning nozzle 38 .
- the three wafer chucks 22 are arranged along the periphery of the wafer 1 at regular intervals (refer to FIG. 8 ).
- the charged chemical solution 30 is discharged onto the principal surface (top surface) of the wafer 1 without getting contact with the wafer chucks 22 depending on a rotational speed of the wafer chucks 22 , and a moving speed of the cleaning nozzle 38 .
- the chemical solution 30 discharged from the tip of the cleaning nozzle 38 is made to be continuously discharged so as not to intermit during the discharge.
- static electricity of the chemical solution 30 moving through the pipes 32 and 33 can also be discharged through the surfaces of the wafer chucks 22 .
- the cleaning nozzle 38 is made to move above a center of the wafer 1 while discharging the chemical solution 30 from the tip of the cleaning nozzle 38 .
- the opening and closing valve 37 of the pipe 34 is opened, and the chemical solution 30 is supplied also onto the back surface (bottom surface) of the wafer 1 through the pipe 39 in the rotating stage 21 coupled to the pipe 34 .
- the chemical solution 30 is continued to be supplied to the principal surface (top surface) and the back surface (bottom surface) of the wafer 1 in this state for a predetermined time, thereby cleaning both surfaces of the wafer 1 .
- the chemical solution 30 supplied to the principal surface (top surface) and the back surface (bottom surface) of the wafer 1 is then discharged outside through a liquid discharge port 40 of a bottom of the cleaning cup 23 .
- the chemical solution 30 flowing through the pipe 34 is also subjected to friction with an inner wall of the pipe 34 to be charged with static electricity similarly to the chemical solution 30 flowing through the pipe 33 .
- the Pt plating film is formed on the surface of the synthetic resin constituting the rotating stage 21 , and further, the ground wire 24 for discharge is connected to this Pt plating film.
- the chemical solution 30 when the chemical solution 30 is supplied to the principal surface of the wafer 1 from the tip of the cleaning nozzle 38 , the chemical solution 30 is previously made to contact with the protrusions 22 a of the wafer, chucks 22 that have held and fixed the wafer 1 , thereby discharging the static electricity of the chemical solution 30 .
- the discharged chemical solution 30 is supplied onto the principal surface of the wafer 1 , abnormal discharge (damage) of the wafer 1 due to charging of the chemical solution 30 can be reliably suppressed.
- the cleaning nozzle 38 having waited outside the cleaning cup 23 is made to move inside the cleaning cup 23 at a predetermined speed A, and the tip of the cleaning nozzle 38 is made to be located above the rotational trajectory of the protrusions 22 a of the wafer chucks 22 .
- the above-described movement of the cleaning nozzle 38 is performed while discharging the chemical solution 30 from the tip of the cleaning nozzle 38 .
- the cleaning nozzle 38 is made to move above the center of the wafer 1 while discharging the chemical solution 30 from the tip of the cleaning nozzle 38 .
- a speed C at which the cleaning nozzle 38 is made to move is equal to or not less than the moving speed B of the cleaning nozzle 38 when the tip of the cleaning nozzle 38 is located above the rotational trajectory of the protrusions 22 a (C ⁇ B).
- the chemical solution 30 is supplied also onto the back surface (bottom surface) of the wafer 1 through the pipe 39 in the rotating stage 21 , and the chemical solution 30 is continued to be supplied to the principal surface and the back surface of the wafer 1 for a predetermined time, thereby cleaning the both surfaces of the wafer 1 .
- the present invention has been applied to the SPM cleaning step after forming a diffusion layer (n-type semiconductor region 11 and p-type semiconductor region 12 ) of the CMOS transistor by ion implantation using the photoresist film as the mask, it is not limited to this, and it can be widely applied to SPM cleaning after chemical mechanical polishing, SPM cleaning after resist removal, etc.
- the present invention is not limited to this, and it can be widely applied to a single wafer cleaning step in which another chemical solution, particularly, a chemical solution containing electrolytes, such as acid and alkali, is used.
- the present invention is not limited to this and, for example, it can also be applied to a cleaning step of a glass substrate for liquid crystals, etc.
- the present invention can be applied to single wafer type cleaning of a semiconductor wafer etc. using a chemical solution.
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
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Abstract
Suppressed is damage of a semiconductor wafer due to charging of a cleaning liquid used in a single wafer type wafer cleaning step.
A chemical solution discharged from a tip of a cleaning nozzle is brought into contact with protrusions of wafer chucks to thereby let static electricity of the chemical solution go to the wafer chucks, and subsequently, the cleaning nozzle is moved above the wafer to supply the chemical solution onto a top surface of the wafer, thereby suppressing abnormal discharge (damage) of the wafer due to charging of the chemical solution.
Description
- The disclosure of Japanese Patent Application No. 2010-162826 filed on Jul. 20, 2010 including the specification, drawings and abstract is incorporated herein by reference in its entirety.
- The present invention relates to a manufacturing method of a semiconductor device and, in particular, to technology effective in applying to a cleaning method for removing contaminants attached onto a surface of a semiconductor wafer.
- Since various kinds of contaminants, such as particles (fine particles), organic substances, and metal, attach onto and remain on a surface of a semiconductor wafer (hereinafter simply referred to as a wafer) in manufacturing steps of a semiconductor device, cleaning processing is essential in which these contaminants are removed using a cleaning liquid (a chemical solution or pure water). However, in a step of processing the surface of the wafer with the cleaning liquid, there occur such problems that the wafer is charged due to various causes, and that thereby a semiconductor element formed on the wafer is damaged or destroyed by static electricity.
- In Patent Document 1 (Japanese Patent Laid-Open No. 2007-221026), disclosed is wafer cleaning technology that prevents static electricity charged on a wafer from being transmitted through a cleaning liquid at the moment when the cleaning liquid is discharged and then being partially discharged. Specifically, when cleaning the wafer while scanning a nozzle for supplying the cleaning liquid, first, discharge of the cleaning liquid is started from an area other than an element formation region of the wafer (a peripheral portion of the wafer), and subsequently, the nozzle for supplying the cleaning liquid is moved to the element formation region to clean it. According to this method, since the cleaning liquid is discharged to the element formation region after discharged to the peripheral portion of the wafer to discharge the static electricity, a semiconductor element formed in the element formation region is not affected by the static electricity.
- In Patent Document 2 (Japanese Patent Laid-Open No. 2008-159789), disclosed is a single wafer type cleaner in which chuck pins that hold a wafer are comprised of conductive resin of a lower resistance (not more than 100 kΩ), and in which pipes that supply a cleaning liquid to a front surface and a back surface of the wafer are comprised of conductive resin of a lower resistance (not more than 100Ω) for the purpose of discharging static electricity charged on the wafer and static electricity generated by a flow of the cleaning liquid.
- In Patent Document 3 (Japanese Patent Laid-Open No. 1997-092635), disclosed is a cleaner in which a carrier that holds a wafer is comprised of a conductive material whose volume resistivity is not more than 1×1015 Ω/cm, and in which charging of the carrier is prevented by grounding it to eventually suppress charging of the wafer in contact with the carrier.
- In a wafer cleaning step after CMP (Chemical Mechanical Polishing) that is one of manufacturing steps of a semiconductor device, and a wafer cleaning step after a resist is removed, cleaning processing using an SPM and an APM is mainly performed. SPM cleaning is cleaning processing in which contaminants (particularly, organic contaminants) on a surface of a wafer are removed by cleaning the wafer at a temperature of approximately 120° C. using a chemical solution made by adding hydrogen peroxide solution to sulfuric acid. In addition, APM cleaning is cleaning processing using a chemical solution made by adding hydrogen peroxide solution to ammonia, and it is also called SC1 cleaning.
- The inventor has discovered a phenomenon in which abnormal discharge is generated on a wafer and thereby the wafer is irreversibly damaged in a single wafer type SPM cleaning step performed after resist removal. Consequently, when investigating a chemical solution supply system of a single wafer type cleaner, it has turned out that a chemical solution (SPM) stored in a chemical solution tank is subjected to friction with inner walls of pipes to be charged on a way to be sent to a cleaning nozzle through the pipes, and that as a result of it, static electricity is discharged from the chemical solution to the wafer at the moment when the chemical solution discharged from the cleaning nozzle gets contact with a surface of the wafer.
- In addition, it has also become apparent from an examination by the inventor that the above-described charging of the chemical solution is generally generated in a chemical solution containing electrolytes, such as acid and alkali and, in particular, it is easily generated in a chemical solution containing sulfuric acid, such as an SPM.
- Further, it has also become apparent from an examination by the inventor that abnormal discharge of the wafer due to the above-described charging of the chemical solution is generated when a thin film, such as an insulating film or a semiconductor film, has been attached to the wafer more easily than when a substrate (single crystal silicon) is exposed on a back surface of the wafer. For example, in manufacturing steps of a CMOS (Complementary Metal Oxide Semiconductor) transistor, after thermally oxidizing a wafer to form a gate insulating film, a polycrystalline silicon film for gate electrodes is deposited over the gate insulating film using a CVD method. At this time, a back surface of the wafer is also oxidized to form a silicon oxide film (gate insulating film), and subsequently, a polycrystalline silicon film attaches to a surface of this silicon oxide film. As a result of it, capacitance comprised of a substrate (single crystal silicon)—the silicon oxide film—the polycrystalline silicon film is formed on the back surface of the wafer, and when wafer cleaning is performed with a charged chemical solution in such a state, abnormal discharge is easily generated.
- Consequently, although the inventor tried to make the pipes of the chemical solution supply system comprised of a conductive material, or tried to ground the chemical solution flowing through the pipes with a conductive wire as prevention measures for the above-described charging of the chemical solution, these measures could not effectively prevent the charge of the chemical solution. In addition, although the inventor tried to make wafer chucks (parts for holding a periphery of a wafer) provided in the single wafer type cleaner comprised of the conductive material, and tried to discharge outside through the wafer chucks static electricity of the chemical solution discharged from the cleaning nozzle to the surface of the wafer, this method was not able to prevent abnormal discharge of the wafer due to the charged chemical solution.
- The present invention has been made in view of the above circumstances and provides technology that can suppress damage of a wafer due to charging of a chemical solution used in a single wafer type wafer cleaning step.
- The other purposes and the new feature of the present invention will become clear from the description of the present specification and the accompanying drawings.
- The following explains briefly the outline of a typical invention among the inventions disclosed in the present application.
- A manufacturing method of a semiconductor device that is one embodiment of the application includes a step of cleaning a semiconductor wafer by supplying a chemical solution onto a top surface of the semiconductor wafer from a cleaning nozzle while holding a periphery of the semiconductor wafer with wafer chucks and rotating the semiconductor wafer and the wafer chucks in a horizontal plane. Additionally, in the method, the chemical solution is brought into contact with the wafer chucks prior to a step of supplying the chemical solution onto the top surface of the semiconductor wafer.
- The following explains briefly the effect acquired by the typical invention among the inventions disclosed in the present application.
- Static electricity of the chemical solution can be discharged through the wafer chucks by bringing the chemical solution into contact with the wafer chucks prior to the step of supplying the chemical solution onto the top surface of the semiconductor wafer, thus enabling to suppress damage of the semiconductor wafer due to charging of the chemical solution.
-
FIG. 1 is a cross-sectional view of a main part of a semiconductor wafer showing a manufacturing method of a CMOS device according to anembodiment 1 of the present invention; -
FIG. 2 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent toFIG. 1 ; -
FIG. 3 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent toFIG. 2 ; -
FIG. 4 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent toFIG. 3 ; -
FIG. 5 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent toFIG. 4 ; -
FIG. 6 is a cross-sectional view of the main part of the semiconductor wafer showing the manufacturing method of the CMOS device subsequent toFIG. 5 ; -
FIG. 7 is a schematic configuration view of a single wafer type cleaner used in theembodiment 1 of the present invention; -
FIG. 8 is a schematic plan view when a cleaning section of the single wafer type cleaner shown inFIG. 7 is viewed from above; -
FIG. 9 is a schematic configuration view of the single wafer type cleaner showing a cleaning method according to theembodiment 1 of the present invention; -
FIG. 10 is a schematic configuration view of the single wafer type cleaner showing the cleaning method subsequent toFIG. 9 ; -
FIG. 11 is a schematic configuration view of the single wafer type cleaner showing the cleaning method subsequent toFIG. 10 ; -
FIG. 12 is a schematic configuration view of the single wafer type cleaner showing a comparative example of a cleaning method; -
FIG. 13 is a schematic configuration view of the single wafer type cleaner showing the cleaning method subsequent toFIG. 11 ; -
FIG. 14 is a schematic configuration view of the single wafer type cleaner showing the cleaning method subsequent toFIG. 13 ; -
FIG. 15 is a schematic configuration view of the single wafer type cleaner showing a cleaning method according to anembodiment 2 of the present invention; and -
FIG. 16 is a schematic plan view of the single wafer type cleaner showing change of a moving speed of a cleaning nozzle. - Hereinafter, embodiments of the present invention will be described in detail based on drawings. It is to be noted that the same symbols are given to members having the same functions in all the drawings for illustrating the embodiments, and repeated description of the members is omitted. In addition, description of the same or similar portions is not repeated in principle except when needed in the embodiments. Further, there is a case of applying hatching even to a plan view; or a case of omitting hatching even in a cross-sectional view in order to make a configuration clearer in the drawings for illustrating the embodiments.
- First, a manufacturing method of a CMOS (Complementary Metal Oxide Semiconductor) transistor according to an
embodiment 1 will be described in order of step usingFIGS. 1 to 6 . - As shown in
FIG. 1 , for example, after forming anelement isolation trench 2, an n-type well 3, and a p-type well 4 in a principal surface of awafer 1 comprised of single crystal silicon of 12 inches in diameter, agate insulating film 5 comprised of silicon oxide is formed on respective surfaces of the n-type well 3 and the p-type well 4. Here, theelement isolation trench 2 is formed by an STI (Shallow Trench Isolation) method that buries a silicon oxide film inside a trench formed in the principal surface of thewafer 1, and the n-type well 3 and the p-type well 4 are formed by ion-implanting impurities using a photoresist film as a mask. In addition, thegate insulating film 5 is formed by thermally oxidizing the respective surfaces of the n-type well 3 and the p-type well 4. - Next, as shown in
FIG. 2 , a non-doped polycrystalline silicon film 6 a is deposited over the principal surface of thewafer 1 using a CVD method. It is to be noted that an amorphous silicon film may be used instead of the polycrystalline silicon film 6 a. - Next, boron (B) is ion-implanted in the polycrystalline silicon film 6 a in the upper portion of the n-
type well 3 using a photoresist film (not shown) as a mask, phosphorus (P) is ion-implanted in the polycrystalline silicon film 6 a in the upper portion of the p-type well 4, and subsequently, thewafer 1 is annealed to activate impurities (boron and phosphorus). As a result of this, as shown inFIG. 3 , the polycrystalline silicon film 6 a in the upper portion of the n-type well 3 becomes a p-typepolycrystalline silicon film 6 p, and the polycrystalline silicon film 6 a in the upper portion of the p-type well 4 becomes an n-typepolycrystalline silicon film 6 n. - Next, as shown in
FIG. 4 , the p-typepolycrystalline silicon film 6 p and the n-typepolycrystalline silicon film 6 n are dry-etched, respectively using aphotoresist film 7 as a mask. As a result of this, agate electrode 8 p comprised of the p-typepolycrystalline silicon film 6 p is formed in the upper portion of the n-type well 3, and agate electrode 8 n comprised of the n-typepolycrystalline silicon film 6 n is formed in the upper portion of the p-type well 4. - Next, after removing the
photoresist film 7 by ashing, as shown inFIG. 5 , a photoresist film 9 is formed in the upper portion of the n-type well 3, phosphorus (P) is ion-implanted in the p-type well 4 using this photoresist film 9 as a mask, and thereby n-type semiconductor regions 11 are formed in the p-type well 4 of both sides of thegate electrode 8 n. - Next, after removing the photoresist film 9 by ashing, as shown in
FIG. 6 , aphotoresist film 10 is formed in the upper portion of the p-type well 4, boron (B) is ion-implanted in the n-type well 3 using thisphotoresist film 10 as a mask, and thereby p-type semiconductor regions 12 are formed in the n-type well 3 of both sides of thegate electrode 8 p. - Next, after removing the
photoresist film 10 by ashing, SPM cleaning of thewafer 1 is performed by the following method in order to remove contaminants (mainly, residual substances of ashing of the photoresist film) attached onto and remained on a surface of thewafer 1. -
FIG. 7 is a schematic configuration view of a single wafer type cleaner used in theembodiment 1, andFIG. 8 is a schematic plan view when a cleaning section of the single wafer type cleaner shown inFIG. 7 is viewed from above. - A single
wafer type cleaner 20 is comprised of a cleaning section that cleans thewafer 1, and a chemical solution supply section that supplies a chemical solution (SPM) to this cleaning section. The cleaning section is comprised of arotating stage 21 that rotates thewafer 1 in a horizontal plane, wafer chucks 22 that horizontally hold thewafer 1 placed in the upper portion of therotating stage 21, a cleaningcup 23 that surrounds around the rotatingstage 21, etc. - The above-described
rotating stage 21, the wafer chucks 22, and the cleaningcup 23 are comprised of synthetic resin with corrosion resistance to the chemical solution (SPM), for example, vinyl chloride resin, ABS resin, etc. In addition, a plating film (not shown) comprised of metal, such as Pt (platinum) with corrosion resistance to the chemical solution (SPM), is formed on a surface of the synthetic resin that constitutes therotating stage 21, and further, aground wire 24 for discharge is connected to this plating film. - As shown in
FIG. 8 , three wafer chucks 22 that hold thewafer 1 are arranged along a periphery of thewafer 1 at regular intervals. In addition, each of the three wafer chucks 22 has aprotrusion 22 a extending outside the periphery of thewafer 1. It is to be noted that the number, a shape, an area, etc. of thewafer chuck 22 are not limited to examples shown inFIGS. 7 and 8 , and a design thereof can be arbitrarily changed, but thewafer chuck 22 has a portion protruding outside the periphery of the wafer 1 (protrusion 22 a) in any case. - The chemical solution supply section of the single
wafer type cleaner 20 is comprised of achemical solution tank 31 that stores achemical solution 30,pipes chemical solution 30 in thechemical solution tank 31 to the cleaning section, apump 35 connected in the middle of thepipe 32 for pumping the chemical solution, opening and closingvalves pipes movable cleaning nozzle 38 provided at one end of thepipe 33, etc. Thechemical solution tank 31 and thepipes chemical solution 30, for example, fluorine resin. - One end of the above-described
pipe 34 is coupled to apipe 39 provided in therotating stage 21 of the cleaning section. An upper end of thepipe 39 in therotating stage 21 is located at a top surface of therotating stage 21, and thechemical solution 30 sent to thepipe 39 through thepipe 34 is discharged from the top surface of therotating stage 21 to clean a back surface of thewafer 1. - In order to clean the
wafer 1 using the above-described singlewafer type cleaner 20, first, as shown inFIG. 9 , thewafer 1 is placed on therotating stage 21 with the principal surface thereof directed upward, and the periphery of thewafer 1 is held and fixed by the wafer chucks 22. At this time, a slight gap is created between the back surface of thewafer 1 and the top surface of therotating stage 21. Hence, thewafer 1 is in contact with only the wafer chucks 22, and it is in a non-contact state with other members of the singlewafer type cleaner 20. In addition, the cleaningnozzle 38 is waiting outside the cleaningcup 23 at this time. - Next, as shown in
FIG. 10 , the rotatingstage 21 is rotated at a predetermined speed, for example, at 500 rpm. As a result of this, the wafer chucks 22 and thewafer 1 held and fixed by the wafer chucks 22 also rotate at the same speed as therotating stage 21. - In addition, while the cleaning
nozzle 38 inside the cleaningcup 23 is made to move in tandem with a rotation of therotating stage 21, the opening and closingvalve 36 of thepipe 33 is opened, and when a tip of the cleaningnozzle 38 is located outside the wafer chucks 22, thechemical solution 30 is discharged from the tip of the cleaningnozzle 38. At this time, thechemical solution 30 discharged from the tip of the cleaningnozzle 38 has been charged with static electricity since it is subjected to friction with inner walls of thepipes - Next, as shown in
FIG. 11 , the cleaningnozzle 38 is made to move further inside the cleaningcup 23 while discharging thechemical solution 30 from the tip of the cleaningnozzle 38. - Subsequently, when the tip of the cleaning
nozzle 38 is located above a rotational trajectory of theprotrusions 22 a of the wafer chucks 22, movement of the cleaningnozzle 38 is temporarily stopped. - As a result of this, since the
chemical solution 30 discharged from the tip of the cleaningnozzle 38 gets contact with theprotrusions 22 a of the rotating wafer chucks 22, static electricity of thechemical solution 30 is discharged outside along surfaces of the wafer chucks 22 and a surface of therotating stage 21. It is to be noted that a plating film comprised of Pt etc. may be applied to the surfaces of the wafer chucks 22 similarly to the surface of therotating stage 21 in order to promote the discharge from the surfaces of the wafer chucks 22 to the surface of therotating stage 21. - As described above, the three wafer chucks 22 are arranged along the periphery of the
wafer 1 at regular intervals (refer toFIG. 8 ). Hence, for example, as shown inFIG. 12 , when moving the tip of the cleaningnozzle 38 above thewafer 1 without temporarily stopping the cleaningnozzle 38 above the rotational trajectory of the wafer chucks 22, there is a possibility that the chargedchemical solution 30 is discharged onto the principal surface (top surface) of thewafer 1 without getting contact with the wafer chucks 22 depending on a rotational speed of the wafer chucks 22, and a moving speed of the cleaningnozzle 38. - In contrast with this, when the tip of the cleaning
nozzle 38 is located above the rotational trajectory of theprotrusions 22 a of the wafer chucks 22, movement of the cleaningnozzle 38 is temporarily stopped, whereby thechemical solution 30 discharged from the tip of the cleaningnozzle 38 can be reliably made to contact with theprotrusions 22 a of the wafer chucks 22 regardless of the number of thewafer chuck 22 and the rotational speed thereof. - In addition, when making the
chemical solution 30 contact with the wafer chucks 22, thechemical solution 30 discharged from the tip of the cleaningnozzle 38 is made to be continuously discharged so as not to intermit during the discharge. As a result of this, static electricity of thechemical solution 30 moving through thepipes - Next, as shown in
FIG. 13 , the cleaningnozzle 38 is made to move above a center of thewafer 1 while discharging thechemical solution 30 from the tip of the cleaningnozzle 38. In addition, the opening and closingvalve 37 of thepipe 34 is opened, and thechemical solution 30 is supplied also onto the back surface (bottom surface) of thewafer 1 through thepipe 39 in therotating stage 21 coupled to thepipe 34. Subsequently, thechemical solution 30 is continued to be supplied to the principal surface (top surface) and the back surface (bottom surface) of thewafer 1 in this state for a predetermined time, thereby cleaning both surfaces of thewafer 1. Thechemical solution 30 supplied to the principal surface (top surface) and the back surface (bottom surface) of thewafer 1 is then discharged outside through aliquid discharge port 40 of a bottom of the cleaningcup 23. - It is to be noted that the
chemical solution 30 flowing through thepipe 34 is also subjected to friction with an inner wall of thepipe 34 to be charged with static electricity similarly to thechemical solution 30 flowing through thepipe 33. However, as described above, the Pt plating film is formed on the surface of the synthetic resin constituting therotating stage 21, and further, theground wire 24 for discharge is connected to this Pt plating film. Hence, when thechemical solution 30 flowing through thepipe 34 flows into thepipe 39 in therotating stage 21, static electricity of thechemical solution 30 is discharged outside through the Pt plating film and theground wire 24, and therefore, thechemical solution 30 that gets contact with the back surface of thewafer 1 is not charged with static electricity. - Next, as shown in
FIG. 14 , supply of thechemical solution 30 to the principal surface and the back surface of thewafer 1 is stopped by closing the opening and closingvalves stage 21 is rotated at a high speed of 1500 rpm, and thechemical solution 30 attached to the principal surface and the back surface of thewafer 1 is centrifugally shaken off outside thewafer 1, thereby completing the SPM cleaning of thewafer 1. After that, thewafer 1 is conveyed to a single wafer type pure water cleaner, which is not shown, and SPM residual substances that have remained on the principal surface and the back surface of thewafer 1 are cleaned off. - As described above, in the
embodiment 1, when thechemical solution 30 is supplied to the principal surface of thewafer 1 from the tip of the cleaningnozzle 38, thechemical solution 30 is previously made to contact with theprotrusions 22 a of the wafer, chucks 22 that have held and fixed thewafer 1, thereby discharging the static electricity of thechemical solution 30. As a result of this, since the dischargedchemical solution 30 is supplied onto the principal surface of thewafer 1, abnormal discharge (damage) of thewafer 1 due to charging of thechemical solution 30 can be reliably suppressed. - In the above-described
embodiment 1, in order to reliably make thechemical solution 30 contact with theprotrusions 22 a of the rotating wafer chucks 22, when the tip of the cleaningnozzle 38 is located above the rotational trajectory of theprotrusions 22 a, movement of the cleaningnozzle 38 is temporarily stopped. However, it is not necessary to completely stop the cleaningnozzle 38 above the rotational trajectory of theprotrusions 22 a, and the cleaningnozzle 38 may be moved at a speed lower enough with respect to the rotational speed of the wafer chucks 22. - Namely, after steps of the
embodiment 1 shown in FIGS. 9 and 10, as shown inFIGS. 15 and 16 , the cleaningnozzle 38 having waited outside the cleaningcup 23 is made to move inside the cleaningcup 23 at a predetermined speed A, and the tip of the cleaningnozzle 38 is made to be located above the rotational trajectory of theprotrusions 22 a of the wafer chucks 22. The above-described movement of the cleaningnozzle 38 is performed while discharging thechemical solution 30 from the tip of the cleaningnozzle 38. - Subsequently, while the tip of the cleaning
nozzle 38 is located above the rotational trajectory of theprotrusions 22 a, the cleaningnozzle 38 is made to move at a speed B lower than the above-described speed A (B<A). As a result of this, as shown inFIG. 11 , since thechemical solution 30 can be reliably made to contact with theprotrusions 22 a of the wafer chucks 22 rotating at a high speed, static electricity of thechemical solution 30 can be discharged prior to the step of supplying thechemical solution 30 onto the principal surface of thewafer 1. - After that, as shown in
FIG. 13 , the cleaningnozzle 38 is made to move above the center of thewafer 1 while discharging thechemical solution 30 from the tip of the cleaningnozzle 38. At this time, it is defined that a speed C at which the cleaningnozzle 38 is made to move is equal to or not less than the moving speed B of the cleaningnozzle 38 when the tip of the cleaningnozzle 38 is located above the rotational trajectory of theprotrusions 22 a (C≧B). In addition, at this time, thechemical solution 30 is supplied also onto the back surface (bottom surface) of thewafer 1 through thepipe 39 in therotating stage 21, and thechemical solution 30 is continued to be supplied to the principal surface and the back surface of thewafer 1 for a predetermined time, thereby cleaning the both surfaces of thewafer 1. - As a result of this, since the discharged
chemical solution 30 is supplied onto the principal surface of thewafer 1 similarly to the above-describedembodiment 1, abnormal discharge (damage) of thewafer 1 due to charging of thechemical solution 30 can be reliably suppressed. - As described above, although the invention made by the inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and it goes without saying that the present invention can be variously changed without departing from the scope thereof.
- In the above-described embodiments, although the present invention has been applied to the SPM cleaning step after forming a diffusion layer (n-
type semiconductor region 11 and p-type semiconductor region 12) of the CMOS transistor by ion implantation using the photoresist film as the mask, it is not limited to this, and it can be widely applied to SPM cleaning after chemical mechanical polishing, SPM cleaning after resist removal, etc. - In addition, although a case has been described in the above-described embodiments where the present invention is applied to the SPM cleaning step, the present invention is not limited to this, and it can be widely applied to a single wafer cleaning step in which another chemical solution, particularly, a chemical solution containing electrolytes, such as acid and alkali, is used.
- In addition, although a case has been described in the above-described embodiments where the present invention is applied to the cleaning step of the semiconductor wafer, the present invention is not limited to this and, for example, it can also be applied to a cleaning step of a glass substrate for liquid crystals, etc.
- The present invention can be applied to single wafer type cleaning of a semiconductor wafer etc. using a chemical solution.
Claims (5)
1-8. (canceled)
9. A manufacturing method of a semiconductor device, including the step of cleaning the semiconductor wafer in a single wafer system by supplying a chemical solution onto a top surface of the semiconductor wafer from a cleaning nozzle while holding a periphery of the semiconductor wafer with wafer chucks and rotating the semiconductor wafer and the wafer chucks in a horizontal plane, the method comprising the steps of: (a) temporarily stopping the cleaning nozzle above a rotational trajectory of the wafer chucks while discharging the chemical solution from a tip of the cleaning nozzle; and (b) after the step (a), moving the cleaning nozzle above the semiconductor wafer while discharging the chemical solution from the tip of the cleaning nozzle.
10. The manufacturing method of a semiconductor device according to claim 9 ,
wherein the chemical solution is comprised of an electrolyte solution containing acid or alkali.
11. The manufacturing method of a semiconductor device according to claim 10 ,
wherein the acid is sulfuric acid.
12. The manufacturing method of a semiconductor device according to claim 9 ,
wherein the step of cleaning the semiconductor wafer in the single wafer system is a cleaning step to be performed after removing a photoresist film by ashing.
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US13/186,458 US9263304B2 (en) | 2010-07-20 | 2011-07-19 | Manufacturing method of semiconductor device |
US14/997,565 US20160133487A1 (en) | 2010-07-20 | 2016-01-17 | Manufacturing method of semiconductor device |
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US11424040B2 (en) * | 2013-01-03 | 2022-08-23 | Aetna Inc. | System and method for pharmacovigilance |
JP6373803B2 (en) * | 2015-06-23 | 2018-08-15 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
KR20170009539A (en) * | 2015-07-17 | 2017-01-25 | 세메스 주식회사 | Unit for supplying treating liquid and Apparatus for treating substrate |
JP6876570B2 (en) * | 2017-07-28 | 2021-05-26 | 株式会社Screenホールディングス | Treatment liquid static elimination method, substrate processing method and substrate processing system |
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JPH07221062A (en) * | 1994-02-04 | 1995-08-18 | Fujitsu Ltd | Spin washing machine and method |
JPH0992635A (en) | 1995-09-21 | 1997-04-04 | Hitachi Cable Ltd | Method for washing semiconductor wafer |
JPH11233473A (en) * | 1998-02-09 | 1999-08-27 | Hitachi Ltd | Method and device for cleaning semiconductor |
JP4747877B2 (en) * | 2006-02-20 | 2011-08-17 | セイコーエプソン株式会社 | Manufacturing method of electro-optical device |
JP2008159789A (en) * | 2006-12-22 | 2008-07-10 | Renesas Technology Corp | Semiconductor device manufacturing method |
JP2010087326A (en) * | 2008-10-01 | 2010-04-15 | Renesas Technology Corp | Method for manufacturing semiconductor device |
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CN109669322A (en) * | 2017-10-16 | 2019-04-23 | 细美事有限公司 | The method of mask cleaning equipment and cleaning mask |
US10942446B2 (en) | 2017-10-16 | 2021-03-09 | Semes Co. Ltd. | Mask cleaning apparatus and method for cleaning mask |
CN109669322B (en) * | 2017-10-16 | 2021-07-09 | 细美事有限公司 | Mask cleaning apparatus and method of cleaning mask |
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US9263304B2 (en) | 2016-02-16 |
US20120017948A1 (en) | 2012-01-26 |
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