TWI466284B - 光電元件 - Google Patents

光電元件 Download PDF

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Publication number
TWI466284B
TWI466284B TW099134516A TW99134516A TWI466284B TW I466284 B TWI466284 B TW I466284B TW 099134516 A TW099134516 A TW 099134516A TW 99134516 A TW99134516 A TW 99134516A TW I466284 B TWI466284 B TW I466284B
Authority
TW
Taiwan
Prior art keywords
semiconductor
extension
unit
electrode
units
Prior art date
Application number
TW099134516A
Other languages
English (en)
Chinese (zh)
Other versions
TW201203534A (en
Inventor
沈建賦
井長慧
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/830,059 external-priority patent/US9324691B2/en
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW201203534A publication Critical patent/TW201203534A/zh
Application granted granted Critical
Publication of TWI466284B publication Critical patent/TWI466284B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
TW099134516A 2010-07-02 2010-10-07 光電元件 TWI466284B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/830,059 US9324691B2 (en) 2009-10-20 2010-07-02 Optoelectronic device

Publications (2)

Publication Number Publication Date
TW201203534A TW201203534A (en) 2012-01-16
TWI466284B true TWI466284B (zh) 2014-12-21

Family

ID=45349596

Family Applications (3)

Application Number Title Priority Date Filing Date
TW099134516A TWI466284B (zh) 2010-07-02 2010-10-07 光電元件
TW099134515A TWI446527B (zh) 2010-07-02 2010-10-07 光電元件
TW103136727A TWI533474B (zh) 2009-10-20 2010-10-07 光電元件

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW099134515A TWI446527B (zh) 2010-07-02 2010-10-07 光電元件
TW103136727A TWI533474B (zh) 2009-10-20 2010-10-07 光電元件

Country Status (5)

Country Link
JP (3) JP2012015480A (enExample)
KR (4) KR101616098B1 (enExample)
CN (2) CN102315239B (enExample)
DE (1) DE102010060269B4 (enExample)
TW (3) TWI466284B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466284B (zh) * 2010-07-02 2014-12-21 晶元光電股份有限公司 光電元件
KR20140059985A (ko) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 발광소자
CN108447855B (zh) * 2012-11-12 2020-11-24 晶元光电股份有限公司 半导体光电元件的制作方法
KR101992366B1 (ko) * 2012-12-27 2019-06-24 엘지이노텍 주식회사 발광 소자
TWI597864B (zh) 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
TWI633683B (zh) * 2013-08-27 2018-08-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
CN110047865B (zh) * 2013-09-03 2024-02-23 晶元光电股份有限公司 具有多个发光结构的发光元件
CN110176469B (zh) * 2013-11-29 2022-01-04 晶元光电股份有限公司 发光二极管元件
JP6351520B2 (ja) * 2014-08-07 2018-07-04 株式会社東芝 半導体発光素子
DE112016000731T5 (de) * 2015-02-13 2017-12-21 Seoul Viosys Co., Ltd. Lichtaussendeelement und leuchtdiode
KR102647673B1 (ko) * 2016-09-27 2024-03-14 서울바이오시스 주식회사 발광 다이오드
KR102480220B1 (ko) * 2016-04-08 2022-12-26 삼성전자주식회사 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널
KR101987196B1 (ko) 2016-06-14 2019-06-11 삼성디스플레이 주식회사 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법
KR102363036B1 (ko) * 2017-04-03 2022-02-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN107516701B (zh) * 2017-07-14 2019-06-11 华灿光电(苏州）有限公司 一种高压发光二极管芯片及其制作方法
TWI731163B (zh) * 2017-09-13 2021-06-21 晶元光電股份有限公司 半導體元件

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US20030107053A1 (en) * 2000-03-31 2003-06-12 Toshiya Uemura Group-III nitride compound semiconductor device
TW200514281A (en) * 2003-08-28 2005-04-16 Matsushita Electric Industrial Co Ltd Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US20080179603A1 (en) * 2002-08-29 2008-07-31 Seoul Semiconductors Co., Ltd. Light-emitting device having light-emitting elements

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Publication number Priority date Publication date Assignee Title
US20030107053A1 (en) * 2000-03-31 2003-06-12 Toshiya Uemura Group-III nitride compound semiconductor device
US20080179603A1 (en) * 2002-08-29 2008-07-31 Seoul Semiconductors Co., Ltd. Light-emitting device having light-emitting elements
TW200514281A (en) * 2003-08-28 2005-04-16 Matsushita Electric Industrial Co Ltd Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device

Also Published As

Publication number Publication date
KR101929867B1 (ko) 2019-03-14
CN102315239B (zh) 2016-08-17
CN105977272A (zh) 2016-09-28
TW201203533A (en) 2012-01-16
DE102010060269A1 (de) 2012-01-05
KR20170035357A (ko) 2017-03-30
JP7001728B2 (ja) 2022-01-20
JP2020145432A (ja) 2020-09-10
TWI533474B (zh) 2016-05-11
TW201203534A (en) 2012-01-16
KR20180006625A (ko) 2018-01-18
KR101616098B1 (ko) 2016-04-27
JP6255372B2 (ja) 2017-12-27
CN102315239A (zh) 2012-01-11
CN105977272B (zh) 2021-01-01
JP2012015480A (ja) 2012-01-19
KR20160048745A (ko) 2016-05-04
TW201519473A (zh) 2015-05-16
JP2016021595A (ja) 2016-02-04
KR20120003352A (ko) 2012-01-10
TWI446527B (zh) 2014-07-21
DE102010060269B4 (de) 2020-10-01

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