TWI465387B - 含有不消隱量子點之裝置 - Google Patents

含有不消隱量子點之裝置 Download PDF

Info

Publication number
TWI465387B
TWI465387B TW097132778A TW97132778A TWI465387B TW I465387 B TWI465387 B TW I465387B TW 097132778 A TW097132778 A TW 097132778A TW 97132778 A TW97132778 A TW 97132778A TW I465387 B TWI465387 B TW I465387B
Authority
TW
Taiwan
Prior art keywords
ternary
core
shell
light
nanocrystals
Prior art date
Application number
TW097132778A
Other languages
English (en)
Chinese (zh)
Other versions
TW200918448A (en
Inventor
Keith B Kahen
Xiaofan Ren
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of TW200918448A publication Critical patent/TW200918448A/zh
Application granted granted Critical
Publication of TWI465387B publication Critical patent/TWI465387B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881Chalcogenides
    • C09K11/883Chalcogenides with zinc or cadmium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
TW097132778A 2007-10-30 2008-08-27 含有不消隱量子點之裝置 TWI465387B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/928,292 US7777233B2 (en) 2007-10-30 2007-10-30 Device containing non-blinking quantum dots

Publications (2)

Publication Number Publication Date
TW200918448A TW200918448A (en) 2009-05-01
TWI465387B true TWI465387B (zh) 2014-12-21

Family

ID=39884992

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097132778A TWI465387B (zh) 2007-10-30 2008-08-27 含有不消隱量子點之裝置

Country Status (6)

Country Link
US (2) US7777233B2 (enExample)
EP (1) EP2212398B1 (enExample)
JP (1) JP2011502333A (enExample)
CN (1) CN101842460A (enExample)
TW (1) TWI465387B (enExample)
WO (1) WO2009058172A1 (enExample)

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
WO2008021962A2 (en) 2006-08-11 2008-02-21 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystals and devices
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
US8030664B2 (en) * 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
JP5407241B2 (ja) * 2007-09-28 2014-02-05 大日本印刷株式会社 エレクトロルミネッセンス素子
US20100289003A1 (en) * 2007-10-29 2010-11-18 Kahen Keith B Making colloidal ternary nanocrystals
EP2227512A1 (en) * 2007-12-18 2010-09-15 Lumimove, Inc., Dba Crosslink Flexible electroluminescent devices and systems
WO2009099425A2 (en) * 2008-02-07 2009-08-13 Qd Vision, Inc. Flexible devices including semiconductor nanocrystals, arrays, and methods
JP4445556B2 (ja) * 2008-02-18 2010-04-07 国立大学法人広島大学 発光素子およびその製造方法
US8044382B2 (en) * 2008-03-26 2011-10-25 Hiroshima University Light-emitting device and method for manufacturing the same
KR101995371B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
JP5170020B2 (ja) * 2008-10-03 2013-03-27 セイコーエプソン株式会社 有機el装置及び電子機器
WO2010048581A2 (en) 2008-10-24 2010-04-29 Life Technologies Corporation Stable nanoparticles and methods of making and using such particles
TWI396294B (zh) * 2008-11-12 2013-05-11 Academia Sinica 量子點紅外線偵測器裝置
KR101462657B1 (ko) * 2008-12-19 2014-11-17 삼성전자 주식회사 반도체 나노 결정 복합체
KR101652789B1 (ko) * 2009-02-23 2016-09-01 삼성전자주식회사 다중 양자점층을 가지는 양자점 발광소자
KR101603777B1 (ko) * 2009-04-16 2016-03-15 삼성전자주식회사 백색 발광 다이오드
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
CA2775324C (en) 2009-09-23 2018-05-15 Crystalplex Corporation Passivated nanoparticles
US20110073835A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
US8394651B2 (en) * 2009-12-22 2013-03-12 The United States Of America, As Represented By The Secretary Of The Navy Auger rate suppression in confined structures
WO2011088159A1 (en) 2010-01-15 2011-07-21 Eastman Kodak Company Optoelectronic device containing large-sized emitting colloidal nanocrystals
US8530883B2 (en) * 2010-03-11 2013-09-10 Light-Based Technologies Incorporated Manufacture of quantum dot-enabled solid-state light emitters
KR101683270B1 (ko) 2010-03-31 2016-12-21 삼성전자 주식회사 백색 발광 다이오드를 포함하는 액정 디스플레이 장치
US8702277B2 (en) 2010-07-12 2014-04-22 Samsung Electronics Co., Ltd. White light emitting diode and liquid crystal display including the same
EP2613145B1 (en) * 2010-08-30 2017-06-28 Konica Minolta, Inc. Tissue staining method, tissue evaluation method and biosubstance detection method
US9525092B2 (en) 2010-11-05 2016-12-20 Pacific Light Technologies Corp. Solar module employing quantum luminescent lateral transfer concentrator
WO2012089739A2 (de) 2010-12-28 2012-07-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher, verwendung eines informationsspeichers als passives display und sensoranordung
DE102011076535A1 (de) 2011-05-26 2012-11-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher und verwendung eines informationsspeichers als passives display
WO2012138410A1 (en) * 2011-04-02 2012-10-11 Qd Vision, Inc. Device including quantum dots
US8866416B2 (en) * 2011-05-04 2014-10-21 Universal Display Corporation Illumination source using LEDs and OLEDs
WO2012158252A1 (en) * 2011-05-16 2012-11-22 Qd Vision, Inc. Device including quantum dots and method for making same
DE102011051086A1 (de) * 2011-06-15 2012-12-20 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren und Vorrichtung zur Abbildung einer mit einem Fluoreszenzfarbstoff markierten Struktur in einer Probe
US8784703B2 (en) * 2011-10-18 2014-07-22 Eastman Kodak Company Method of making highly-confined semiconductor nanocrystals
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
WO2013115898A2 (en) 2012-02-05 2013-08-08 Qd Vision, Inc. Semiconductor nanocrystals, methods for making same, compositions, and products
WO2013078247A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
US8912020B2 (en) * 2011-11-23 2014-12-16 International Business Machines Corporation Integrating active matrix inorganic light emitting diodes for display devices
KR20130141963A (ko) * 2012-06-18 2013-12-27 주식회사 큐디솔루션 Oled용 시인성 향상 필름 및 그 제조방법
KR101347896B1 (ko) * 2012-06-26 2014-01-10 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101383551B1 (ko) * 2012-07-16 2014-04-10 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
TWI600022B (zh) * 2012-07-20 2017-09-21 半導體能源研究所股份有限公司 脈衝輸出電路、顯示裝置、及電子裝置
JP2014056896A (ja) * 2012-09-11 2014-03-27 Ns Materials Kk 半導体を利用した発光デバイス及びその製造方法
WO2014099080A2 (en) 2012-09-26 2014-06-26 University Of Florida Research Foundation, Inc. Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode
KR102033479B1 (ko) * 2012-11-23 2019-10-18 엘지디스플레이 주식회사 양자막대 및 이의 제조방법
US9224920B2 (en) 2012-11-23 2015-12-29 Lg Display Co., Ltd. Quantum rod and method of fabricating the same
US9024205B2 (en) 2012-12-03 2015-05-05 Invensas Corporation Advanced device assembly structures and methods
US8941111B2 (en) * 2012-12-21 2015-01-27 Invensas Corporation Non-crystalline inorganic light emitting diode
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
KR102113581B1 (ko) 2013-05-22 2020-05-22 삼성디스플레이 주식회사 증착 장치, 그 방법 및 이를 이용한 양자점층 형성 방법
CN103441138B (zh) * 2013-08-13 2016-06-22 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
CN105830236A (zh) * 2013-10-17 2016-08-03 内诺光学有限公司 发射光的量子点及其合成方法
KR102139577B1 (ko) 2013-10-24 2020-07-31 삼성디스플레이 주식회사 유기 발광 표시 장치
US9228717B2 (en) * 2013-11-28 2016-01-05 Lg Display Co., Ltd. Quantum rod compound including electron acceptor and quantum rod luminescent display device including the same
CN110611038A (zh) 2013-12-12 2019-12-24 内诺光学有限公司 提升量子点发光二极管的正老化效应和稳定性的方法和结构
US10995267B2 (en) 2014-05-29 2021-05-04 Crystalplex Corporation Dispersion system for quantum dots having organic coatings comprising free polar and non-polar groups
CN104076564A (zh) * 2014-06-09 2014-10-01 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
US10151946B2 (en) * 2014-07-31 2018-12-11 Google Technology Holdings LLC Apparatus with visible and infrared light emitting display
DE102014117312A1 (de) * 2014-08-28 2016-03-03 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung und Beleuchtungsvorrichtung
GB2531568B (en) * 2014-10-22 2018-07-04 Toshiba Res Europe Limited An optical device and method of fabricating an optical device
US10334685B2 (en) * 2014-11-14 2019-06-25 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Carbon dot light emitting diodes
CN104531142A (zh) * 2014-12-23 2015-04-22 北京理工大学 一种用掺杂锌的硫化镉纳米带调制黄光的方法
CN104779333B (zh) * 2015-04-15 2018-04-27 上海大学 大面积量子点发光装置
US9734444B2 (en) * 2015-06-05 2017-08-15 Empire Technology Development Llc Solid-state barcodes and methods for their preparation and use
WO2017033137A1 (en) * 2015-08-27 2017-03-02 Sabic Global Technologies B.V. Apparatus having electroluminescent quantum dots
TW201729901A (zh) 2015-12-02 2017-09-01 奈米系統股份有限公司 於顯示裝置中基於量子點之色轉換層
WO2017096229A1 (en) 2015-12-02 2017-06-08 Nanosys, Inc. Quantum dot encapsulation techniques
CN105487264B (zh) * 2015-12-29 2018-11-09 东南大学 一种基于量子限制斯塔克效应的电光调制器件制备方法
US10217953B2 (en) * 2016-02-18 2019-02-26 Boe Technology Group Co., Ltd. Quantum dot light-emitting device, fabricating method thereof, and display substrate
WO2017163149A1 (en) * 2016-03-23 2017-09-28 Koninklijke Philips N.V. Nano-material imaging detector with an integral pixel border
TWI744296B (zh) * 2016-03-24 2021-11-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
JP7175265B2 (ja) 2016-05-19 2022-11-18 クリスタルプレックス コーポレーション カドミウムフリー量子ドット、調整可能な量子ドット、量子ドット含有ポリマー、それらを含有する物品、フィルム、および3d構造ならびにそれらの作製および使用方法
CN105977304B (zh) * 2016-05-31 2019-01-11 京东方科技集团股份有限公司 晶体管、其制造方法、阵列基板、显示面板及显示装置
WO2018005195A1 (en) * 2016-06-27 2018-01-04 Nanosys, Inc. Methods for buffered coating of nanostructures
CN106356470A (zh) * 2016-09-13 2017-01-25 Tcl集团股份有限公司 核壳半导体纳米棒薄膜、偏振发光二极管及其制备方法
CN106410057B (zh) * 2016-11-08 2019-05-24 Tcl集团股份有限公司 量子阱能级结构的qled器件
EP3336158B1 (en) * 2016-12-14 2023-03-08 Samsung Electronics Co., Ltd. Emissive nanocrystal particle, method of preparing the same and device including emissive nanocrystal particle
CN108269886B (zh) * 2016-12-30 2019-12-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108269926A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点组成及其制备方法
CN108264904A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种发光材料、制备方法及半导体器件
CN108269923A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点探测器及其制备方法
CN108269930B (zh) 2016-12-30 2020-05-26 Tcl科技集团股份有限公司 一种合金纳米材料、制备方法及半导体器件
CN108269927A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种反置顶发射qled器件及其制备方法
CN108269892B (zh) * 2016-12-30 2021-06-22 Tcl科技集团股份有限公司 具有量子阱能级结构的合金材料、制备方法及半导体器件
CN108264901B (zh) * 2016-12-30 2022-08-05 Tcl科技集团股份有限公司 具有漏斗型能级结构的发光材料、制备方法及半导体器件
CN108269934A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种纳米材料、制备方法及半导体器件
CN108264900A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点复合材料、制备方法及半导体器件
CN108269928A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种正置底发射qled器件及其制备方法
CN108264903A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点照明模组及照明设备
CN108264905A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
WO2018120514A1 (zh) * 2016-12-30 2018-07-05 Tcl集团股份有限公司 Qled器件及其制备方法
CN108269933A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种反置底发射qled器件及其制备方法
CN108269929B (zh) * 2016-12-30 2022-06-24 Tcl科技集团股份有限公司 一种正置顶发射qled器件及其制备方法
CN108269935A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点薄膜及其制备方法
CN108269891B (zh) * 2016-12-30 2021-05-18 Tcl科技集团股份有限公司 一种纳米复合材料、制备方法及半导体器件
CN108269893B (zh) * 2016-12-30 2020-05-22 Tcl科技集团股份有限公司 一种纳米晶体、制备方法及半导体器件
CN108267888A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点背光模组、显示装置和电子设备
CN107221837B (zh) * 2017-05-24 2019-04-05 北京大学 一种水滴法胶质量子点微盘的制备方法
CN108123003B (zh) * 2017-12-07 2019-12-31 上海电机学院 一种半导体三量子点结构实现中远红外单光子探测的方法
CN108231236A (zh) * 2018-01-26 2018-06-29 吉林大学 辐射闪烁体式核电池
CN110346859B (zh) * 2018-04-08 2023-05-16 京东方科技集团股份有限公司 光学谐振腔、显示面板
CN110718637B (zh) * 2018-07-11 2020-12-22 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
CN110875405A (zh) 2018-08-29 2020-03-10 光子科学研究所基金会 发光器件、光学光谱仪和用于发光器件的下变频膜
EP3618130B1 (en) 2018-08-29 2023-07-26 Fundació Institut de Ciències Fotòniques A light emitting device, an optical spectrometer, and a down-converting film for a light emitting device
CN109192762B (zh) * 2018-09-06 2021-01-15 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
JP2020071152A (ja) * 2018-10-31 2020-05-07 ソニー株式会社 免疫染色方法、免疫染色システム、および免疫染色キット
WO2020170373A1 (ja) * 2019-02-20 2020-08-27 シャープ株式会社 発光デバイスの製造方法
WO2020170368A1 (ja) * 2019-02-20 2020-08-27 シャープ株式会社 発光デバイスの製造方法
US11917842B2 (en) * 2019-02-20 2024-02-27 Sharp Kabushiki Kaisha Method for manufacturing light-emitting device
US11996501B2 (en) * 2019-02-20 2024-05-28 Sharp Kabushiki Kaisha Method for manufacturing light-emitting device
US20220149338A1 (en) * 2019-02-20 2022-05-12 Sharp Kabushiki Kaisha Light-emitting device, and method for manufacturing light-emitting device
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
CN110311049B (zh) * 2019-07-03 2021-09-28 京东方科技集团股份有限公司 量子点显示基板及其制作方法、显示装置
KR102823948B1 (ko) 2019-08-05 2025-06-24 삼성디스플레이 주식회사 양자점 조성물, 발광 소자 및 이를 포함하는 표시 장치
EP4045881A4 (en) * 2019-10-17 2023-12-20 C2Sense, Inc. LUMINESCENCE IMAGING FOR DETECTION AND/OR AUTHENTICATION
US20210116449A1 (en) 2019-10-17 2021-04-22 C2Sense, Inc. Rolling shutter based sensing and related methods
KR102718897B1 (ko) 2019-10-31 2024-10-16 삼성전자주식회사 발광 소자, 그 제조방법 및 이를 포함한 표시 장치
US12371610B2 (en) * 2020-02-04 2025-07-29 Sharp Kabushiki Kaisha Light-emitting element and method for manufacturing light-emitting element
WO2021157018A1 (ja) * 2020-02-06 2021-08-12 シャープ株式会社 量子ドット層の製造方法、および、発光デバイスの製造方法
US20230089691A1 (en) * 2020-02-06 2023-03-23 Sharp Kabushiki Kaisha Method for manufacturing light-emitting device
US20230090605A1 (en) * 2020-02-06 2023-03-23 Sharp Kabushiki Kaisha Method for producing light-emitting device, and light-emitting device
CN113972342B (zh) * 2020-07-22 2024-04-30 Tcl科技集团股份有限公司 量子点薄膜及其制备方法和量子点发光二极管及其制备方法
CN112216711B (zh) * 2020-09-15 2023-12-22 深圳远芯光路科技有限公司 一种GaN光传感生物传感芯片及其制备方法和应用
CN113964277B (zh) * 2021-10-19 2024-08-06 北京京东方技术开发有限公司 一种量子点发光器件和显示装置
CN114397667B (zh) * 2021-12-29 2024-12-13 西安电子科技大学 一种星间测距系统、方法、设备及数据处理终端
CN114792750B (zh) * 2022-06-24 2022-11-01 西安赛富乐斯半导体科技有限公司 全彩化Micro-LED倒装芯片结构及其制备方法
CN119896033A (zh) * 2022-10-19 2025-04-25 夏普显示科技株式会社 发光元件、显示装置及其发光元件的制造方法
WO2024199637A1 (en) * 2023-03-28 2024-10-03 Crocus Labs GmbH Light conversion device with coating comprising emitter-type and barrier-type quantum dots
CN117625195A (zh) * 2023-10-24 2024-03-01 中国科学技术大学 具有取向发光的量子点及其制备方法、应用
WO2025141892A1 (ja) * 2023-12-29 2025-07-03 シャープディスプレイテクノロジー株式会社 発光素子、表示装置及び量子ドット分散液

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186317A (ja) * 2004-11-11 2006-07-13 Samsung Electronics Co Ltd 多層構造のナノ結晶およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
AU2002320252A1 (en) 2001-07-02 2003-01-21 Board Of Regents, University Of Texas System Light-emitting nanoparticles and method of making same
ATE556845T1 (de) * 2001-07-20 2012-05-15 Life Technologies Corp Lumineszierende nanopartikel und ihre herstellung
WO2004015454A2 (en) * 2002-07-30 2004-02-19 The Board Of Trustees Of The Leland Stanford Junior University Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material
EP1540741B1 (en) * 2002-09-05 2014-10-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7056471B1 (en) 2002-12-16 2006-06-06 Agency For Science Technology & Research Ternary and quarternary nanocrystals, processes for their production and uses thereof
US20060170331A1 (en) * 2003-03-11 2006-08-03 Dietrich Bertram Electroluminescent device with quantum dots
WO2005001889A2 (en) 2003-05-07 2005-01-06 Indiana University Research & Technology Corporation Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto
EP1702020B1 (en) 2003-12-12 2016-04-06 Life Technologies Corporation Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties
JP2008520799A (ja) * 2004-11-19 2008-06-19 エージェンシー フォー サイエンス,テクノロジー アンド リサーチ 水溶液中でのコア/シェル型半導体ナノ結晶の生成
US7615800B2 (en) * 2005-09-14 2009-11-10 Eastman Kodak Company Quantum dot light emitting layer
EP2308513A3 (de) 2005-11-16 2011-11-23 Signalomics GmbH Fluoreszenz-Nanopartikel

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186317A (ja) * 2004-11-11 2006-07-13 Samsung Electronics Co Ltd 多層構造のナノ結晶およびその製造方法

Also Published As

Publication number Publication date
US7777233B2 (en) 2010-08-17
US20090109435A1 (en) 2009-04-30
US20100289001A1 (en) 2010-11-18
EP2212398A1 (en) 2010-08-04
JP2011502333A (ja) 2011-01-20
US8242515B2 (en) 2012-08-14
EP2212398B1 (en) 2018-02-28
TW200918448A (en) 2009-05-01
CN101842460A (zh) 2010-09-22
WO2009058172A1 (en) 2009-05-07

Similar Documents

Publication Publication Date Title
TWI465387B (zh) 含有不消隱量子點之裝置
Frecker et al. Quantum dots and their application in lighting, displays, and biology
Wood et al. Alternating current driven electroluminescence from ZnSe/ZnS: Mn/ZnS nanocrystals
Shirasaki et al. Emergence of colloidal quantum-dot light-emitting technologies
US10686034B2 (en) Nanocrystals with high extinction coefficients and methods of making and using such nanocrystals
Kim et al. Pushing the efficiency envelope for semiconductor nanocrystal-based electroluminescence devices using anisotropic nanocrystals
Panfil et al. Colloidal quantum nanostructures: emerging materials for display applications
Wood et al. Colloidal quantum dot light-emitting devices
Zhang et al. Color-tunable highly bright photoluminescence of cadmium-free Cu-doped Zn–In–S nanocrystals and electroluminescence
Kim et al. Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes
US7888700B2 (en) Quantum dot light emitting device
Yuan et al. Cu-catalyzed synthesis of CdZnSe–CdZnS alloy quantum dots with highly tunable emission
US20100289003A1 (en) Making colloidal ternary nanocrystals
Prodanov et al. Progress toward blue-emitting (460–475 nm) nanomaterials in display applications
JP2009537965A (ja) 半導体ナノクリスタルを含む発光デバイス
VanWie et al. Bright cool white emission from ultrasmall CdSe quantum dots
Sung et al. Synthesis strategies and applications of non-toxic quantum dots
Chen et al. Highly efficient and stable CdZnSeS/ZnSeS quantum dots for application in white light-emitting diode
Cho et al. Surface coating of gradient alloy quantum dots with oxide layer in white-light-emitting diodes for display backlights
Kim et al. Heterointerface Effects on Carrier Dynamics in Colloidal Quantum Dots and Their Application to Light-Emitting Diodes
Li et al. Atomic-layer-deposited ZnO/Al2O3 nanolaminates for white-light-emitting diodes
Yin et al. Efficient heterotransfer between visible quantum dots
US20100270504A1 (en) Photoluminescent metal nanoclusters
Perveen Investigation of sputtered gold nanoparticles substrates for surface plasmon enhanced electroluminescence and photoluminescence devices School of Physics Beijing Institute of Technology, Beijing China
Chauhan et al. Quantum dots and nanoparticles in light-emitting diodes and displays applications

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees