TWI463134B - Evaluation method of oxide semiconductor thin film, and quality management method of oxide semiconductor thin film - Google Patents
Evaluation method of oxide semiconductor thin film, and quality management method of oxide semiconductor thin film Download PDFInfo
- Publication number
- TWI463134B TWI463134B TW100116488A TW100116488A TWI463134B TW I463134 B TWI463134 B TW I463134B TW 100116488 A TW100116488 A TW 100116488A TW 100116488 A TW100116488 A TW 100116488A TW I463134 B TWI463134 B TW I463134B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide semiconductor
- thin film
- semiconductor thin
- film
- sample
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 162
- 239000010409 thin film Substances 0.000 title claims description 127
- 238000011156 evaluation Methods 0.000 title claims description 14
- 238000007726 management method Methods 0.000 title description 4
- 239000010408 film Substances 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 65
- 230000005284 excitation Effects 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 47
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 111
- 239000000203 mixture Substances 0.000 description 36
- 238000005259 measurement Methods 0.000 description 32
- 238000012545 processing Methods 0.000 description 13
- 238000005477 sputtering target Methods 0.000 description 13
- 238000000137 annealing Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000009826 distribution Methods 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910007717 ZnSnO Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229940038504 oxygen 100 % Drugs 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101150053844 APP1 gene Proteins 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101100189105 Homo sapiens PABPC4 gene Proteins 0.000 description 1
- 102100039424 Polyadenylate-binding protein 4 Human genes 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229940062042 oxygen 50 % Drugs 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010150356 | 2010-06-30 | ||
| JP2011025322A JP5814558B2 (ja) | 2010-06-30 | 2011-02-08 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201226892A TW201226892A (en) | 2012-07-01 |
| TWI463134B true TWI463134B (zh) | 2014-12-01 |
Family
ID=45846866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100116488A TWI463134B (zh) | 2010-06-30 | 2011-05-11 | Evaluation method of oxide semiconductor thin film, and quality management method of oxide semiconductor thin film |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5814558B2 (ja) |
| TW (1) | TWI463134B (ja) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6204036B2 (ja) | 2012-03-16 | 2017-09-27 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法 |
| KR101913311B1 (ko) * | 2012-04-09 | 2019-01-15 | 삼성디스플레이 주식회사 | 실리콘 박막 측정 방법, 실리콘 박막 결함 검출 방법, 및 실리콘 박막 결함 검출 장치 |
| TWI449930B (zh) * | 2012-07-18 | 2014-08-21 | Sino American Silicon Prod Inc | 矽晶棒的品質判定方法 |
| JP5759425B2 (ja) * | 2012-07-20 | 2015-08-05 | 株式会社神戸製鋼所 | 薄膜トランジスタの半導体層用薄膜の形成に用いられるターゲット組立体の品質評価方法 |
| JP6152348B2 (ja) | 2013-01-11 | 2017-06-21 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法及び酸化物半導体薄膜の品質管理方法 |
| JP2014175505A (ja) * | 2013-03-08 | 2014-09-22 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 |
| JP6082950B2 (ja) * | 2013-09-03 | 2017-02-22 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタの評価方法、製造方法、及び、薄膜トランジスタ |
| JP5732120B2 (ja) | 2013-09-13 | 2015-06-10 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価装置 |
| JP5798669B2 (ja) | 2013-12-03 | 2015-10-21 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法、並びに上記評価方法に用いられる評価装置 |
| JP6243800B2 (ja) * | 2014-06-09 | 2017-12-06 | 株式会社神戸製鋼所 | 酸化物半導体評価装置および該方法 |
| JP6283273B2 (ja) * | 2014-07-01 | 2018-02-21 | 株式会社神戸製鋼所 | 薄膜トランジスタ評価用の積層構造体の評価方法 |
| JP5993496B2 (ja) * | 2014-07-16 | 2016-09-14 | 株式会社神戸製鋼所 | 酸化物半導体薄膜、及び前記酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法 |
| JP6616304B2 (ja) * | 2014-07-31 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 半導体の評価方法 |
| JP2016066788A (ja) | 2014-09-19 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 半導体膜の評価方法および半導体装置の作製方法 |
| JP5961314B2 (ja) * | 2014-12-02 | 2016-08-02 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の膜質管理方法 |
| JP6957134B2 (ja) * | 2016-07-21 | 2021-11-02 | 株式会社半導体エネルギー研究所 | 酸化物半導体の評価方法 |
| KR102161466B1 (ko) * | 2019-11-21 | 2020-10-05 | 주식회사 아바코 | 산화물 반도체 박막 검사장치 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0750417A (ja) * | 1993-08-06 | 1995-02-21 | Canon Inc | 半導体装置 |
| TW200503057A (en) * | 2003-06-11 | 2005-01-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus |
| TW200534488A (en) * | 2004-03-12 | 2005-10-16 | Japan Science & Tech Agency | Amorphous oxide and thin film transistor |
| JP2008191123A (ja) * | 2007-02-08 | 2008-08-21 | Kobe Steel Ltd | 薄膜半導体の結晶性測定装置及びその方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2540632B2 (ja) * | 1989-05-02 | 1996-10-09 | 株式会社メックス | 半導体材料のライフタイム計測方法及びその装置 |
| JP3121961B2 (ja) * | 1993-06-08 | 2001-01-09 | 株式会社神戸製鋼所 | 半導体ウエハの物性測定装置 |
| HU227170B1 (en) * | 2000-02-17 | 2010-09-28 | Semilab Felvezetoe Fiz Lab Rt | Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors |
| JP2010123872A (ja) * | 2008-11-21 | 2010-06-03 | Sony Corp | 酸化物半導体層の非破壊検査方法、及び酸化物半導体層の作製方法 |
| CN102859659B (zh) * | 2010-04-23 | 2017-07-28 | 日立化成工业株式会社 | p型扩散层形成组合物、p型扩散层的制造方法和太阳能电池元件的制造方法 |
-
2011
- 2011-02-08 JP JP2011025322A patent/JP5814558B2/ja active Active
- 2011-05-11 TW TW100116488A patent/TWI463134B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0750417A (ja) * | 1993-08-06 | 1995-02-21 | Canon Inc | 半導体装置 |
| TW200503057A (en) * | 2003-06-11 | 2005-01-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus |
| TW200534488A (en) * | 2004-03-12 | 2005-10-16 | Japan Science & Tech Agency | Amorphous oxide and thin film transistor |
| JP2008191123A (ja) * | 2007-02-08 | 2008-08-21 | Kobe Steel Ltd | 薄膜半導体の結晶性測定装置及びその方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012033857A (ja) | 2012-02-16 |
| TW201226892A (en) | 2012-07-01 |
| JP5814558B2 (ja) | 2015-11-17 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |